TW451305B - Method of forming tungsten layers and laminate structure of tungsten layers - Google Patents

Method of forming tungsten layers and laminate structure of tungsten layers Download PDF

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Publication number
TW451305B
TW451305B TW089100344A TW89100344A TW451305B TW 451305 B TW451305 B TW 451305B TW 089100344 A TW089100344 A TW 089100344A TW 89100344 A TW89100344 A TW 89100344A TW 451305 B TW451305 B TW 451305B
Authority
TW
Taiwan
Prior art keywords
film
gas
tungsten
forming
main
Prior art date
Application number
TW089100344A
Other languages
English (en)
Chinese (zh)
Inventor
Yasushi Aiba
Yukio Koike
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TW451305B publication Critical patent/TW451305B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW089100344A 1999-01-13 2000-01-11 Method of forming tungsten layers and laminate structure of tungsten layers TW451305B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP650699 1999-01-13

Publications (1)

Publication Number Publication Date
TW451305B true TW451305B (en) 2001-08-21

Family

ID=11640328

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089100344A TW451305B (en) 1999-01-13 2000-01-11 Method of forming tungsten layers and laminate structure of tungsten layers

Country Status (5)

Country Link
US (1) US6387445B1 (2)
JP (1) JP2000265272A (2)
KR (1) KR100509225B1 (2)
TW (1) TW451305B (2)
WO (1) WO2000042232A1 (2)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515264B2 (en) 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
JP2002129328A (ja) * 2000-10-31 2002-05-09 Applied Materials Inc 気相堆積方法及び装置
JP2002146531A (ja) * 2000-10-31 2002-05-22 Applied Materials Inc 気相堆積方法及び装置
JP4032872B2 (ja) * 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
JP4103461B2 (ja) * 2001-08-24 2008-06-18 東京エレクトロン株式会社 成膜方法
JP3956049B2 (ja) * 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
JP2006249580A (ja) * 2005-02-10 2006-09-21 Tokyo Electron Ltd 薄膜の積層構造、その形成方法、成膜装置及び記憶媒体
KR101541779B1 (ko) 2009-01-16 2015-08-05 삼성전자주식회사 반도체 소자 및 이의 제조방법
JP5925476B2 (ja) * 2011-12-09 2016-05-25 株式会社アルバック タングステン化合物膜の形成方法
JP6222880B2 (ja) * 2014-09-24 2017-11-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、半導体装置およびプログラム
CN119230478A (zh) * 2023-06-30 2024-12-31 北京北方华创微电子装备有限公司 沉积钨塞的工艺方法及半导体器件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8800221A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US5231055A (en) * 1989-01-13 1993-07-27 Texas Instruments Incorporated Method of forming composite interconnect system
JP2844693B2 (ja) 1989-07-13 1999-01-06 ソニー株式会社 高融点金属膜の形成方法
US5028565A (en) * 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
JPH05160070A (ja) * 1991-05-31 1993-06-25 Texas Instr Inc <Ti> 半導体装置の接点とその製法
US5227336A (en) * 1991-12-27 1993-07-13 Small Power Communication Systems Research Laboratories Co., Ltd. Tungsten chemical vapor deposition method
CA2067565C (en) * 1992-04-29 1999-02-16 Ismail T. Emesh Deposition of tungsten
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
KR950012738B1 (ko) * 1992-12-10 1995-10-20 현대전자산업주식회사 반도체소자의 텅스텐 콘택 플러그 제조방법
JPH06275624A (ja) 1993-03-19 1994-09-30 Miyagi Oki Denki Kk 導電層の形成方法
JP3358328B2 (ja) * 1994-10-27 2002-12-16 ソニー株式会社 高融点金属膜の成膜方法
US5489552A (en) * 1994-12-30 1996-02-06 At&T Corp. Multiple layer tungsten deposition process
US5643632A (en) * 1995-10-13 1997-07-01 Mosel Vitelic, Inc. Tungsten chemical vapor deposition process for suppression of volcano formation
JP3082683B2 (ja) 1996-10-21 2000-08-28 日本電気株式会社 タングステンｃｖｄ成膜方法
US5804249A (en) * 1997-02-07 1998-09-08 Lsi Logic Corporation Multistep tungsten CVD process with amorphization step
US6156382A (en) * 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
US6099904A (en) * 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
US6271129B1 (en) * 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress

Also Published As

Publication number Publication date
WO2000042232A1 (en) 2000-07-20
KR20010041760A (ko) 2001-05-25
KR100509225B1 (ko) 2005-08-18
JP2000265272A (ja) 2000-09-26
US6387445B1 (en) 2002-05-14

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