TW455900B - Field emission device, its manufacturing method and display device using the same - Google Patents

Field emission device, its manufacturing method and display device using the same Download PDF

Info

Publication number
TW455900B
TW455900B TW089104184A TW89104184A TW455900B TW 455900 B TW455900 B TW 455900B TW 089104184 A TW089104184 A TW 089104184A TW 89104184 A TW89104184 A TW 89104184A TW 455900 B TW455900 B TW 455900B
Authority
TW
Taiwan
Prior art keywords
layer
field emission
emission device
emitter
patent application
Prior art date
Application number
TW089104184A
Other languages
English (en)
Chinese (zh)
Inventor
Naoki Wada
Tetsuya Norikane
Tadashi Nakai
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of TW455900B publication Critical patent/TW455900B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
TW089104184A 1999-03-09 2000-03-08 Field emission device, its manufacturing method and display device using the same TW455900B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6128399A JP2000260299A (ja) 1999-03-09 1999-03-09 冷電子放出素子及びその製造方法

Publications (1)

Publication Number Publication Date
TW455900B true TW455900B (en) 2001-09-21

Family

ID=13166733

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089104184A TW455900B (en) 1999-03-09 2000-03-08 Field emission device, its manufacturing method and display device using the same

Country Status (6)

Country Link
JP (1) JP2000260299A (id)
KR (1) KR20010043439A (id)
CN (1) CN1296632A (id)
ID (1) ID29277A (id)
TW (1) TW455900B (id)
WO (1) WO2000054299A1 (id)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6648711B1 (en) * 1999-06-16 2003-11-18 Iljin Nanotech Co., Ltd. Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter
JP2003535443A (ja) * 2000-05-31 2003-11-25 キャンデゼント テクノロジーズ コーポレイション 多層電極構造および形成方法
JPWO2005031781A1 (ja) 2003-09-30 2006-12-07 住友電気工業株式会社 ダイヤモンド電子放出素子の製造方法ならびに電子放出素子
KR100548257B1 (ko) * 2003-11-05 2006-02-02 엘지전자 주식회사 전계 방출 소자
JP4456891B2 (ja) * 2004-03-01 2010-04-28 株式会社アルバック カソード基板及びその作製方法
KR20050104643A (ko) * 2004-04-29 2005-11-03 삼성에스디아이 주식회사 전자 방출 표시장치용 캐소드 기판, 전자 방출 표시장치및 이의 제조 방법
JP4947336B2 (ja) * 2005-11-04 2012-06-06 双葉電子工業株式会社 電界放出素子
JP5365976B2 (ja) * 2008-06-25 2013-12-11 日本電気硝子株式会社 支持枠形成用ガラス組成物および支持枠形成材料
CN102640268B (zh) * 2010-03-04 2016-03-23 日本瑞翁株式会社 半导体元件基板的制造方法
CN104882345A (zh) 2015-05-13 2015-09-02 京东方科技集团股份有限公司 阵列基板及制作方法、显示面板及制作方法和显示装置
CN104934275B (zh) * 2015-05-18 2018-01-09 北京大学 基于金属钼基底的场致电子发射阴极阵列及其制备方法
CN115424909B (zh) * 2022-08-02 2025-07-25 中国科学院苏州纳米技术与纳米仿生研究所 场发射器件及其制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991015874A1 (en) * 1990-03-30 1991-10-17 Motorola, Inc. Cold cathode field emission device having integral control or controlled non-fed devices
WO1992004732A1 (en) * 1990-09-07 1992-03-19 Motorola, Inc. A field emission device employing a layer of single-crystal silicon
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
JP2626276B2 (ja) * 1991-02-06 1997-07-02 双葉電子工業株式会社 電子放出素子
US5268648A (en) * 1992-07-13 1993-12-07 The United States Of America As Represented By The Secretary Of The Air Force Field emitting drain field effect transistor
US5359256A (en) * 1992-07-30 1994-10-25 The United States Of America As Represented By The Secretary Of The Navy Regulatable field emitter device and method of production thereof
FR2698992B1 (fr) * 1992-12-04 1995-03-17 Pixel Int Sa Ecran plat à micropointes protégées individuellement par dipôle.
JP2861755B2 (ja) * 1993-10-28 1999-02-24 日本電気株式会社 電界放出型陰極装置
JP3012517B2 (ja) * 1995-05-11 2000-02-21 凸版印刷株式会社 電子放出素子及びその製造方法
JP2782587B2 (ja) * 1995-08-25 1998-08-06 工業技術院長 冷電子放出素子
JP3135823B2 (ja) * 1995-08-25 2001-02-19 株式会社神戸製鋼所 冷電子放出素子及びその製造方法
KR100201553B1 (ko) * 1995-09-25 1999-06-15 하제준 Mosfet를 일체화한 전계방출 어레이의 구조 및 그 제조 방법
JP2835434B2 (ja) * 1996-03-25 1998-12-14 工業技術院長 冷電子放出素子
JP3764906B2 (ja) * 1997-03-11 2006-04-12 独立行政法人産業技術総合研究所 電界放射型カソード
KR20010034645A (ko) * 1998-03-23 2001-04-25 모리시타 요이찌 전계 방출형 전자원 장치
FR2780808B1 (fr) * 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication

Also Published As

Publication number Publication date
JP2000260299A (ja) 2000-09-22
WO2000054299A1 (en) 2000-09-14
CN1296632A (zh) 2001-05-23
KR20010043439A (ko) 2001-05-25
ID29277A (id) 2001-08-16

Similar Documents

Publication Publication Date Title
KR100650343B1 (ko) 박막 트랜지스터 및 그 제조방법
CN115410922B (zh) 一种垂直型氧化镓晶体管及其制备方法
US8120058B2 (en) High-drive current MOSFET
CN107464851A (zh) 一种氮化镓薄膜晶体管及其制造方法
KR20010043439A (ko) 전계방출소자, 이의 제조방법 및 이를 사용한 디스플레이장치
JPH0395922A (ja) 半導体薄膜の形成方法
CN107623040A (zh) 一种铟镓锌氧化物薄膜晶体管及其制造方法
JPH0422120A (ja) 薄膜半導体装置の製造方法
CN114725020A (zh) 一种基于GaOx-PMOS/GaN-NMOS的CMOS反相器的制备方法
WO2000001004A1 (fr) Procede de formation d'une couche de silicium monocristallin et procede de fabrication d'un dispositif semi-conducteur
JP2012069663A (ja) 半導体装置の製造方法
JPH034564A (ja) 半導体装置の製造方法
CN114725021A (zh) 一种基于GaOx-NMOS/GaN-PMOS的CMOS反相器的制备方法
JP3023189B2 (ja) 半導体装置の製造方法
JP2987987B2 (ja) 結晶半導体薄膜の形成方法並びに薄膜トランジスタの製造方法
JP3535465B2 (ja) 半導体装置の作製方法
JP3392507B2 (ja) 微小電界放出陰極素子
CN119582838B (zh) 一种金刚石高速反相器电路及其制备方法
JP2000260300A (ja) 電子放出素子及びその製造方法
JP3489580B2 (ja) 冷電子放出素子の製造方法
JP2659000B2 (ja) トランジスタの製造方法
CN103928506B (zh) 采用金属发射极的碳化硅双极型晶体管器件及其制作方法
JPS58121642A (ja) 半導体装置の製造方法
JPH02292831A (ja) 半導体装置の製造方法
JP3826539B2 (ja) 冷電子放出素子の製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees