TW459170B - Reference voltage generator with monitoring and start up means - Google Patents
Reference voltage generator with monitoring and start up means Download PDFInfo
- Publication number
- TW459170B TW459170B TW089103269A TW89103269A TW459170B TW 459170 B TW459170 B TW 459170B TW 089103269 A TW089103269 A TW 089103269A TW 89103269 A TW89103269 A TW 89103269A TW 459170 B TW459170 B TW 459170B
- Authority
- TW
- Taiwan
- Prior art keywords
- coupled
- terminal
- output
- output terminal
- reference voltage
- Prior art date
Links
- 238000012544 monitoring process Methods 0.000 title claims abstract description 63
- 230000007246 mechanism Effects 0.000 claims description 128
- 230000002079 cooperative effect Effects 0.000 claims description 10
- 238000012790 confirmation Methods 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 239000008267 milk Substances 0.000 claims 1
- 210000004080 milk Anatomy 0.000 claims 1
- 235000013336 milk Nutrition 0.000 claims 1
- 238000010200 validation analysis Methods 0.000 abstract 1
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 201000005569 Gout Diseases 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Control Of Electrical Variables (AREA)
- Control Of Charge By Means Of Generators (AREA)
- Control Of Voltage And Current In General (AREA)
- Power Steering Mechanism (AREA)
- Control Of Eletrric Generators (AREA)
- Semiconductor Integrated Circuits (AREA)
- Details Of Television Scanning (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99401555A EP1063578B1 (de) | 1999-06-22 | 1999-06-22 | Referenzspannungsgenerator mit Überwachungs- und Anlaufschaltung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW459170B true TW459170B (en) | 2001-10-11 |
Family
ID=8242019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089103269A TW459170B (en) | 1999-06-22 | 2000-02-24 | Reference voltage generator with monitoring and start up means |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6204653B1 (de) |
| EP (1) | EP1063578B1 (de) |
| JP (1) | JP2001042960A (de) |
| KR (1) | KR20010007480A (de) |
| AT (1) | ATE224073T1 (de) |
| AU (1) | AU3402800A (de) |
| CA (1) | CA2311069A1 (de) |
| DE (1) | DE69902891T2 (de) |
| ES (1) | ES2180257T3 (de) |
| IL (1) | IL136140A0 (de) |
| SG (1) | SG84607A1 (de) |
| TW (1) | TW459170B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103267548A (zh) * | 2013-04-03 | 2013-08-28 | 上海晨思电子科技有限公司 | 一种电压装置 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6407622B1 (en) * | 2001-03-13 | 2002-06-18 | Ion E. Opris | Low-voltage bandgap reference circuit |
| JP3998487B2 (ja) * | 2002-02-14 | 2007-10-24 | ローム株式会社 | 定電圧発生回路 |
| DE10237122B4 (de) * | 2002-08-13 | 2011-06-22 | Infineon Technologies AG, 81669 | Schaltung und Verfahren zur Einstellung des Arbeitspunkts einer BGR-Schaltung |
| US6844711B1 (en) | 2003-04-15 | 2005-01-18 | Marvell International Ltd. | Low power and high accuracy band gap voltage circuit |
| US6891357B2 (en) * | 2003-04-17 | 2005-05-10 | International Business Machines Corporation | Reference current generation system and method |
| JP4268890B2 (ja) * | 2004-02-27 | 2009-05-27 | 富士通マイクロエレクトロニクス株式会社 | 基準電圧発生回路 |
| JP4627651B2 (ja) * | 2004-09-30 | 2011-02-09 | シチズンホールディングス株式会社 | 定電圧発生回路 |
| JP4603378B2 (ja) * | 2005-02-08 | 2010-12-22 | 株式会社豊田中央研究所 | 基準電圧回路 |
| JP4904954B2 (ja) * | 2006-07-12 | 2012-03-28 | ヤマハ株式会社 | 基準電圧発生回路 |
| JP4848870B2 (ja) * | 2006-07-13 | 2011-12-28 | ヤマハ株式会社 | 基準電圧発生回路 |
| GB2442493A (en) * | 2006-10-04 | 2008-04-09 | Iti Scotland Ltd | Start-up circuit for bandgap circuit |
| DE102006061512A1 (de) * | 2006-12-18 | 2008-06-19 | Atmel Germany Gmbh | Schaltungsanordnung zum Erzeugen eines temperaturkompensierten Spannungs- oder Stromreferenzwerts |
| JP5407510B2 (ja) * | 2008-08-29 | 2014-02-05 | 株式会社リコー | 定電圧回路装置 |
| US8598861B2 (en) * | 2011-12-19 | 2013-12-03 | O2Micro Inc. | Circuit and method for providing a reference signal |
| GB2557276A (en) * | 2016-12-02 | 2018-06-20 | Nordic Semiconductor Asa | Voltage regulators |
| DE102018200785A1 (de) * | 2018-01-18 | 2019-07-18 | Robert Bosch Gmbh | Spannungsreferenz-Schaltkreis mit kombiniertem Power-on-Reset |
| KR102718472B1 (ko) | 2020-03-19 | 2024-10-17 | 삼성전자주식회사 | 내부 에러를 검출하기 위한 전원 관리 회로 및 전자 장치 |
| CN119105608B (zh) * | 2024-10-14 | 2025-09-23 | 思瑞浦微电子科技(苏州)股份有限公司 | 基于带隙基准电压的检测电路及带隙基准电压电路 |
| CN119828832A (zh) * | 2025-03-11 | 2025-04-15 | 上海芯炽科技集团有限公司 | 一种带隙基准检测电路 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4609833A (en) * | 1983-08-12 | 1986-09-02 | Thomson Components-Mostek Corporation | Simple NMOS voltage reference circuit |
| DE4439707A1 (de) * | 1994-11-05 | 1996-05-09 | Bosch Gmbh Robert | Spannungsreferenz mit Prüfung und Eigenkalibrierung |
| US5646518A (en) * | 1994-11-18 | 1997-07-08 | Lucent Technologies Inc. | PTAT current source |
| KR100400383B1 (ko) * | 1996-03-07 | 2003-12-31 | 마츠시타 덴끼 산교 가부시키가이샤 | 기준 전압원 회로 및 전압 피드백 회로 |
| JPH09330137A (ja) * | 1996-04-10 | 1997-12-22 | Toshiba Corp | 基準電圧発生回路及び基準電圧発生方法 |
| EP0840193B1 (de) * | 1996-11-04 | 2002-05-02 | STMicroelectronics S.r.l. | Banddistanzreferenzspannungsgenerator |
| JPH10210651A (ja) * | 1997-01-24 | 1998-08-07 | Nissan Motor Co Ltd | 定電圧電源回路 |
| US5867013A (en) * | 1997-11-20 | 1999-02-02 | Cypress Semiconductor Corporation | Startup circuit for band-gap reference circuit |
-
1999
- 1999-06-22 DE DE69902891T patent/DE69902891T2/de not_active Expired - Lifetime
- 1999-06-22 AT AT99401555T patent/ATE224073T1/de not_active IP Right Cessation
- 1999-06-22 ES ES99401555T patent/ES2180257T3/es not_active Expired - Lifetime
- 1999-06-22 EP EP99401555A patent/EP1063578B1/de not_active Expired - Lifetime
-
2000
- 2000-02-24 TW TW089103269A patent/TW459170B/zh active
- 2000-05-10 AU AU34028/00A patent/AU3402800A/en not_active Abandoned
- 2000-05-15 IL IL13614000A patent/IL136140A0/xx unknown
- 2000-06-08 JP JP2000171613A patent/JP2001042960A/ja not_active Withdrawn
- 2000-06-09 CA CA002311069A patent/CA2311069A1/en not_active Abandoned
- 2000-06-20 US US09/595,905 patent/US6204653B1/en not_active Expired - Lifetime
- 2000-06-22 KR KR1020000034431A patent/KR20010007480A/ko not_active Withdrawn
- 2000-06-22 SG SG200003515A patent/SG84607A1/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103267548A (zh) * | 2013-04-03 | 2013-08-28 | 上海晨思电子科技有限公司 | 一种电压装置 |
| CN103267548B (zh) * | 2013-04-03 | 2016-02-24 | 上海晨思电子科技有限公司 | 一种电压装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU3402800A (en) | 2001-01-04 |
| KR20010007480A (ko) | 2001-01-26 |
| EP1063578A1 (de) | 2000-12-27 |
| SG84607A1 (en) | 2001-11-20 |
| JP2001042960A (ja) | 2001-02-16 |
| ES2180257T3 (es) | 2003-02-01 |
| DE69902891D1 (de) | 2002-10-17 |
| US6204653B1 (en) | 2001-03-20 |
| DE69902891T2 (de) | 2003-01-23 |
| EP1063578B1 (de) | 2002-09-11 |
| IL136140A0 (en) | 2001-05-20 |
| ATE224073T1 (de) | 2002-09-15 |
| CA2311069A1 (en) | 2000-12-22 |
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