TW478145B - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

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Publication number
TW478145B
TW478145B TW090103810A TW90103810A TW478145B TW 478145 B TW478145 B TW 478145B TW 090103810 A TW090103810 A TW 090103810A TW 90103810 A TW90103810 A TW 90103810A TW 478145 B TW478145 B TW 478145B
Authority
TW
Taiwan
Prior art keywords
film
barrier film
titanium
barrier
memory device
Prior art date
Application number
TW090103810A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshihisa Nagano
Tooru Nasu
Shinichiro Hayashi
Eiji Fujii
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of TW478145B publication Critical patent/TW478145B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW090103810A 2000-02-22 2001-02-20 Semiconductor memory device TW478145B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000043928A JP2001237395A (ja) 2000-02-22 2000-02-22 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW478145B true TW478145B (en) 2002-03-01

Family

ID=18566768

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090103810A TW478145B (en) 2000-02-22 2001-02-20 Semiconductor memory device

Country Status (6)

Country Link
US (1) US6847074B2 (fr)
EP (1) EP1128417A3 (fr)
JP (1) JP2001237395A (fr)
KR (1) KR20010083237A (fr)
CN (1) CN1184691C (fr)
TW (1) TW478145B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003060054A (ja) * 2001-08-10 2003-02-28 Rohm Co Ltd 強誘電体キャパシタを有する半導体装置
KR20030021525A (ko) * 2001-09-06 2003-03-15 유주성 사용자(나)만의 독립적 3차원 캐릭터 인터페이스
KR100422594B1 (ko) * 2001-09-12 2004-03-16 주식회사 하이닉스반도체 반도체 소자의 커패시터 및 제조방법
US20040087080A1 (en) * 2002-10-23 2004-05-06 Uwe Wellhausen Methods for producing thin layers, such as for use in integrated circuits
CN100377357C (zh) * 2003-10-22 2008-03-26 松下电器产业株式会社 半导体装置及其制造方法
JP5010121B2 (ja) * 2005-08-17 2012-08-29 セイコーエプソン株式会社 半導体装置の製造方法
JP4703349B2 (ja) * 2005-10-11 2011-06-15 Ｏｋｉセミコンダクタ株式会社 アモルファス膜の成膜方法
US7692178B2 (en) * 2006-03-08 2010-04-06 Panasonic Corporation Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
US8546944B2 (en) 2010-12-22 2013-10-01 Intel Corporation Multilayer dielectric memory device
WO2014002826A1 (fr) * 2012-06-29 2014-01-03 ソニー株式会社 Élément d'imagerie à semi-conducteur, procédé de fabrication d'élément d'imagerie à semi-conducteur, et instrument électronique
US11107820B2 (en) * 2019-09-13 2021-08-31 Nanya Technology Corporation Semiconductor device and method for fabricating the same
KR102796863B1 (ko) * 2019-10-21 2025-04-17 삼성전자주식회사 금속 질화막 제조방법 및 금속 질화막을 포함하는 전자 소자

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3197782B2 (ja) * 1994-04-29 2001-08-13 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 半導体集積回路コンデンサおよびその電極構造
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
KR0144932B1 (ko) * 1995-01-26 1998-07-01 김광호 반도체 장치의 캐패시터 및 그 제조방법
JPH09102590A (ja) * 1995-10-05 1997-04-15 Ricoh Co Ltd 薄膜キャパシタ
JP3388089B2 (ja) * 1996-04-25 2003-03-17 シャープ株式会社 不揮発性半導体メモリ素子の製造方法
DE19640244A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Kondensator mit einem Elektrodenkern und einer dünnen Edelmetallschicht als erster Elektrode
KR100190111B1 (ko) * 1996-11-13 1999-06-01 윤종용 반도체장치의 커패시터 제조방법
JP4214553B2 (ja) * 1996-12-26 2009-01-28 ソニー株式会社 誘電体キャパシタおよび不揮発性メモリ
US6294420B1 (en) * 1997-01-31 2001-09-25 Texas Instruments Incorporated Integrated circuit capacitor
JPH10223855A (ja) * 1997-02-06 1998-08-21 Hitachi Ltd 半導体メモリ装置及び半導体メモリ装置の製造方法
DE19712540C1 (de) * 1997-03-25 1998-08-13 Siemens Ag Herstellverfahren für eine Kondensatorelektrode aus einem Platinmetall
US5773314A (en) * 1997-04-25 1998-06-30 Motorola, Inc. Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells
JP3452800B2 (ja) * 1997-06-30 2003-09-29 ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド 高集積記憶素子およびその製造方法
US6078072A (en) * 1997-10-01 2000-06-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitor
JPH11186524A (ja) 1997-12-24 1999-07-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100275726B1 (ko) * 1997-12-31 2000-12-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
JPH11307736A (ja) * 1998-04-22 1999-11-05 Sharp Corp 半導体メモリ素子の製造方法
US6358810B1 (en) * 1998-07-28 2002-03-19 Applied Materials, Inc. Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes

Also Published As

Publication number Publication date
CN1184691C (zh) 2005-01-12
KR20010083237A (ko) 2001-08-31
JP2001237395A (ja) 2001-08-31
US20010015451A1 (en) 2001-08-23
CN1310477A (zh) 2001-08-29
EP1128417A2 (fr) 2001-08-29
EP1128417A3 (fr) 2005-09-14
US6847074B2 (en) 2005-01-25

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees