TW503580B - Non-volatile memory element on a monocrystalline semiconductor substrate and process for fabricating same - Google Patents

Non-volatile memory element on a monocrystalline semiconductor substrate and process for fabricating same Download PDF

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Publication number
TW503580B
TW503580B TW090117891A TW90117891A TW503580B TW 503580 B TW503580 B TW 503580B TW 090117891 A TW090117891 A TW 090117891A TW 90117891 A TW90117891 A TW 90117891A TW 503580 B TW503580 B TW 503580B
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TW
Taiwan
Prior art keywords
layer
single crystal
oxide
substrate
patent application
Prior art date
Application number
TW090117891A
Other languages
English (en)
Chinese (zh)
Inventor
Jeffrey M Finder
Kurt Eisenbeiser
Jerald A Hallmark
Original Assignee
Motorola Inc
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Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW503580B publication Critical patent/TW503580B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW090117891A 2000-07-24 2001-07-23 Non-volatile memory element on a monocrystalline semiconductor substrate and process for fabricating same TW503580B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62475400A 2000-07-24 2000-07-24

Publications (1)

Publication Number Publication Date
TW503580B true TW503580B (en) 2002-09-21

Family

ID=24503188

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090117891A TW503580B (en) 2000-07-24 2001-07-23 Non-volatile memory element on a monocrystalline semiconductor substrate and process for fabricating same

Country Status (3)

Country Link
AU (1) AU2001273553A1 (fr)
TW (1) TW503580B (fr)
WO (1) WO2002009191A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019066959A1 (fr) * 2017-09-29 2019-04-04 Intel Corporation Neurones et synapses ferroélectriques
DE102021101243A1 (de) 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherblock-kanalregionen
DE102020127831A1 (de) 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherarray-gatestrukturen
US11710790B2 (en) 2020-05-29 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array channel regions
US11695073B2 (en) 2020-05-29 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array gate structures
US11729987B2 (en) 2020-06-30 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array source/drain electrode structures
US11640974B2 (en) 2020-06-30 2023-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array isolation structures
US11355516B2 (en) 2020-07-16 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11647634B2 (en) 2020-07-16 2023-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
WO2023024100A1 (fr) * 2021-08-27 2023-03-02 华为技术有限公司 Mémoire ferroélectrique et procédé de formation associé, ainsi que dispositif électronique
US20230200081A1 (en) * 2021-12-21 2023-06-22 Intel Corporation Transistor devices with perovskite films
CN116056551A (zh) * 2023-03-31 2023-05-02 北京航空航天大学 一种反铁磁隧道结及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151872A (ja) * 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Ｆｅｔ素子
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
KR100243294B1 (ko) * 1997-06-09 2000-02-01 윤종용 반도체장치의 강유전체 메모리 셀 및 어레이

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Publication number Publication date
AU2001273553A1 (en) 2002-02-05
WO2002009191A3 (fr) 2002-05-23
WO2002009191A2 (fr) 2002-01-31

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