TW525024B - Method of manufacturing poly-crystalline silicon film - Google Patents
Method of manufacturing poly-crystalline silicon film Download PDFInfo
- Publication number
- TW525024B TW525024B TW087115897A TW87115897A TW525024B TW 525024 B TW525024 B TW 525024B TW 087115897 A TW087115897 A TW 087115897A TW 87115897 A TW87115897 A TW 87115897A TW 525024 B TW525024 B TW 525024B
- Authority
- TW
- Taiwan
- Prior art keywords
- polycrystalline silicon
- laser
- thin film
- laser beam
- silicon thin
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H10P14/3816—Pulsed laser beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6731—Top-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3238—Materials thereof being insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
- H10P14/3452—Microstructure
- H10P14/3456—Polycrystalline
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H10P14/381—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/382—Scanning of a beam
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26031697A JP4112655B2 (ja) | 1997-09-25 | 1997-09-25 | 多結晶薄膜の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW525024B true TW525024B (en) | 2003-03-21 |
Family
ID=17346335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087115897A TW525024B (en) | 1997-09-25 | 1998-09-24 | Method of manufacturing poly-crystalline silicon film |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6194023B1 (2) |
| JP (1) | JP4112655B2 (2) |
| KR (1) | KR100302203B1 (2) |
| TW (1) | TW525024B (2) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329270B1 (en) * | 1997-03-07 | 2001-12-11 | Sharp Laboratories Of America, Inc. | Laser annealed microcrystalline film and method for same |
| JP2001053020A (ja) * | 1999-08-06 | 2001-02-23 | Sony Corp | 半導体薄膜の結晶化方法及び薄膜半導体装置の製造方法 |
| KR100671212B1 (ko) * | 1999-12-31 | 2007-01-18 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 형성방법 |
| US6746942B2 (en) * | 2000-09-05 | 2004-06-08 | Sony Corporation | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
| JP2003124543A (ja) * | 2001-08-09 | 2003-04-25 | Sony Corp | フラクタル構造体およびその形成方法ならびに機能材料およびその形成方法ならびに機能素子およびその形成方法 |
| JP5091378B2 (ja) * | 2001-08-17 | 2012-12-05 | 株式会社ジャパンディスプレイセントラル | レーザアニール方法及びレーザアニール条件決定装置 |
| KR100493156B1 (ko) * | 2002-06-05 | 2005-06-03 | 삼성전자주식회사 | 나노입자를 이용한 비정질 실리콘의 결정화 방법 |
| TW569351B (en) * | 2002-11-22 | 2004-01-01 | Au Optronics Corp | Excimer laser anneal apparatus and the application of the same |
| WO2005029551A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| JP4935059B2 (ja) * | 2005-02-17 | 2012-05-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
| WO2007025062A2 (en) * | 2005-08-25 | 2007-03-01 | Wakonda Technologies, Inc. | Photovoltaic template |
| KR100805155B1 (ko) * | 2006-09-15 | 2008-02-21 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 유기 전계 발광 표시 장치 및 그제조방법 |
| KR100878159B1 (ko) * | 2007-04-19 | 2009-01-13 | 주식회사 코윈디에스티 | 레이저 가공장치 |
| JP2011503847A (ja) * | 2007-11-02 | 2011-01-27 | ワコンダ テクノロジーズ， インコーポレイテッド | 結晶質薄膜光起電力構造およびその形成方法 |
| US8236603B1 (en) | 2008-09-04 | 2012-08-07 | Solexant Corp. | Polycrystalline semiconductor layers and methods for forming the same |
| US8415187B2 (en) * | 2009-01-28 | 2013-04-09 | Solexant Corporation | Large-grain crystalline thin-film structures and devices and methods for forming the same |
| US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4309225A (en) * | 1979-09-13 | 1982-01-05 | Massachusetts Institute Of Technology | Method of crystallizing amorphous material with a moving energy beam |
| US4330363A (en) * | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
| JPS57156320A (en) * | 1981-03-17 | 1982-09-27 | Chiyoda Chem Eng & Constr Co Ltd | Production of formed body mainly composed of zeolite |
| JPS5821319A (ja) * | 1981-07-30 | 1983-02-08 | Fujitsu Ltd | レ−ザアニ−ル方法 |
| US4536231A (en) | 1982-10-19 | 1985-08-20 | Harris Corporation | Polysilicon thin films of improved electrical uniformity |
| US4466179A (en) | 1982-10-19 | 1984-08-21 | Harris Corporation | Method for providing polysilicon thin films of improved uniformity |
| JPS6476715A (en) | 1987-09-17 | 1989-03-22 | Nec Corp | Manufacture of polycrystalline semiconductor thin film |
| JP2995736B2 (ja) | 1988-12-28 | 1999-12-27 | ソニー株式会社 | 光ビームアニーリング装置 |
| JP3033120B2 (ja) | 1990-04-02 | 2000-04-17 | セイコーエプソン株式会社 | 半導体薄膜の製造方法 |
| JPH04152624A (ja) * | 1990-10-17 | 1992-05-26 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
| US5372836A (en) * | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
| US5481121A (en) * | 1993-05-26 | 1996-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
| KR100299292B1 (ko) * | 1993-11-02 | 2001-12-01 | 이데이 노부유끼 | 다결정실리콘박막형성방법및그표면처리장치 |
| EP0659911A1 (en) * | 1993-12-23 | 1995-06-28 | International Business Machines Corporation | Method to form a polycrystalline film on a substrate |
| US6059873A (en) * | 1994-05-30 | 2000-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Optical processing method with control of the illumination energy of laser light |
| TW303526B (2) * | 1994-12-27 | 1997-04-21 | Matsushita Electric Industrial Co Ltd | |
| GB9624715D0 (en) * | 1996-11-28 | 1997-01-15 | Philips Electronics Nv | Electronic device manufacture |
-
1997
- 1997-09-25 JP JP26031697A patent/JP4112655B2/ja not_active Expired - Fee Related
-
1998
- 1998-09-24 TW TW087115897A patent/TW525024B/zh not_active IP Right Cessation
- 1998-09-25 KR KR1019980040420A patent/KR100302203B1/ko not_active Expired - Fee Related
- 1998-09-25 US US09/160,360 patent/US6194023B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11102864A (ja) | 1999-04-13 |
| KR100302203B1 (ko) | 2002-09-26 |
| KR19990030214A (ko) | 1999-04-26 |
| JP4112655B2 (ja) | 2008-07-02 |
| US6194023B1 (en) | 2001-02-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |