TWI292604B - - Google Patents

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Publication number: TWI292604B
Authority: TW; Taiwan
Prior art keywords: metal; layer; discharge protection; protection structure; gate
Prior art date: 2002-03-13

Application number

TW91104749A

Other languages

English (en)

Chinese (zh)

Inventor

Lin-Sung Wang

Original Assignee

Taiwan Semiconductor Mfg

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-03-13

Filing date

2002-03-13

Publication date

2008-01-11

2002-03-13 Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg

2002-03-13 Priority to TW91104749A priority Critical patent/TWI292604B/zh

2008-01-11 Application granted granted Critical

2008-01-11 Publication of TWI292604B publication Critical patent/TWI292604B/zh

Links

229910052751 metal Inorganic materials 0.000 claims description 91
239000002184 metal Substances 0.000 claims description 91
239000004065 semiconductor Substances 0.000 claims description 36
239000000758 substrate Substances 0.000 claims description 34
238000000034 method Methods 0.000 claims description 25
238000004519 manufacturing process Methods 0.000 claims description 22
XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 16
229910052732 germanium Inorganic materials 0.000 claims description 9
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
125000006850 spacer group Chemical group 0.000 claims description 9
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
238000005229 chemical vapour deposition Methods 0.000 claims description 7
239000000463 material Substances 0.000 claims description 7
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
229910001507 metal halide Inorganic materials 0.000 claims description 6
150000005309 metal halides Chemical class 0.000 claims description 6
238000005530 etching Methods 0.000 claims description 4
238000010438 heat treatment Methods 0.000 claims description 4
238000005240 physical vapour deposition Methods 0.000 claims description 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
239000004575 stone Substances 0.000 claims description 4
238000000151 deposition Methods 0.000 claims description 3
229910052759 nickel Inorganic materials 0.000 claims description 3
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
229910017052 cobalt Inorganic materials 0.000 claims description 2
239000010941 cobalt Substances 0.000 claims description 2
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
230000008021 deposition Effects 0.000 claims description 2
SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 2
239000011521 glass Substances 0.000 claims description 2
229910052735 hafnium Inorganic materials 0.000 claims description 2
VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
229910052697 platinum Inorganic materials 0.000 claims description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
239000000203 mixture Substances 0.000 claims 2
230000003068 static effect Effects 0.000 claims 2
229910052719 titanium Inorganic materials 0.000 claims 2
239000010936 titanium Substances 0.000 claims 2
229910052684 Cerium Inorganic materials 0.000 claims 1
YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims 1
241000238631 Hexapoda Species 0.000 claims 1
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
239000010953 base metal Substances 0.000 claims 1
GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
230000002950 deficient Effects 0.000 claims 1
229910052805 deuterium Inorganic materials 0.000 claims 1
229910003460 diamond Inorganic materials 0.000 claims 1
239000010432 diamond Substances 0.000 claims 1
229910052744 lithium Inorganic materials 0.000 claims 1
239000008267 milk Substances 0.000 claims 1
210000004080 milk Anatomy 0.000 claims 1
235000013336 milk Nutrition 0.000 claims 1
150000002926 oxygen Chemical class 0.000 claims 1
229910052703 rhodium Inorganic materials 0.000 claims 1
239000010948 rhodium Substances 0.000 claims 1
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
229910052707 ruthenium Inorganic materials 0.000 claims 1
229910052715 tantalum Inorganic materials 0.000 claims 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
238000007740 vapor deposition Methods 0.000 claims 1
150000002500 ions Chemical class 0.000 description 4
239000007943 implant Substances 0.000 description 3
238000001459 lithography Methods 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
239000013078 crystal Substances 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
239000011259 mixed solution Substances 0.000 description 2
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
229910052691 Erbium Inorganic materials 0.000 description 1
235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
244000046052 Phaseolus vulgaris Species 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
235000011114 ammonium hydroxide Nutrition 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
229910052797 bismuth Inorganic materials 0.000 description 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000011982 device technology Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
229910001873 dinitrogen Inorganic materials 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910001922 gold oxide Inorganic materials 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000002955 isolation Methods 0.000 description 1
150000002736 metal compounds Chemical class 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000005496 tempering Methods 0.000 description 1
238000000427 thin-film deposition Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Landscapes

Semiconductor Integrated Circuits (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

TW91104749A 2002-03-13 2002-03-13 TWI292604B (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
TW91104749A TWI292604B (fr)	2002-03-13	2002-03-13

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
TW91104749A TWI292604B (fr)	2002-03-13	2002-03-13

Publications (1)

Publication Number	Publication Date
TWI292604B true TWI292604B (fr)	2008-01-11

Family

ID=45067576

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW91104749A TWI292604B (fr)	2002-03-13	2002-03-13

Country Status (1)

Country	Link
TW (1)	TWI292604B (fr)

2002
- 2002-03-13 TW TW91104749A patent/TWI292604B/zh not_active IP Right Cessation

Legal Events

Date	Code	Title	Description
2018-10-11	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
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