1343512 九、發明說明： 【發明所屬之技術領域】 本發明係與奈米壓印微影製程有關，特別是與一種利 用溝槽結構來促進均勻轉印品質的奈米壓印微影製程有關。 【先前技術】 奈米轉印微影技術係利用印刷術之壓印（imprint)概 念’將一具有奈米圖樣（pattern)的模具施加高壓，以使該1343512 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a nanoimprint lithography process, and more particularly to a nanoimprint lithography process that utilizes a trench structure to promote uniform transfer quality. [Prior Art] The nano-transfer lithography technique uses a stamping imprint concept to apply a high voltage to a mold having a nano pattern to make the
模具接觸具有成型材料的基板，進而製造出具有相同奈米 圖樣的成型材料。此技術所能加工線寬直接相對於模具的 特徵尺寸，因此不會有光學微影製程中曝光波長的限制。 奈米壓印微影技術雖然具有加工線寬上的優勢，但該 技術目前仍停留於實驗室研究之階段，未有真正符合產業 需求之實用商品化量產的製程出現。這是因為該技：現正 問題 面臨下述尚待解決之問題：如何加大有效轉印面積、轉印 均勾性、模具沾耗^、殘冑層厚度以及模具耐料命等 目前為奈米壓印製程多藉由壓板機構來進行。壓板施 壓於轉料元時，由於結構之㈣不可避免會導致壓力分 佈不均’ a樣的結果除了會影響轉印的複製精度外，也合 :制了轉印面積難以加大。另一方面，若以脆性材料作： 在施加料的過財，若為求騎均W加大1 太則可能造成該脆性材料之模具叫 難:ί疋因:Γ發展'另一個提昇有效轉印面積困 難之處。因此，，人達到大面積、高均勾性、高精度與高品 (Β) 5 1343512 質之壓印品質要求，必須針對製程中所採用的壓力施加方 法加以改善。近年來，許多發表中的文獻中陸續提出提昇 轉P «又備之均勻性及平行度、減低壓印力分佈不均、以及 改善面積受限等問題的改良方法。由此可知奈米㈣技術 的改良方法，正逐漸受到各方的關注與重視。The mold is in contact with a substrate having a molding material to produce a molding material having the same nano pattern. This technique is capable of processing line widths directly relative to the feature size of the mold, so there is no limit to the exposure wavelength in the optical lithography process. Although the nanoimprint lithography technology has the advantage of processing line width, the technology is still at the stage of laboratory research, and there is no process for practical commercial mass production that truly meets the industrial needs. This is because the technology: the problem is facing the following problems to be solved: how to increase the effective transfer area, transfer uniformity, mold dip ^, the thickness of the residual layer and the resistance of the mold, etc. The rice embossing process is mostly carried out by a platen mechanism. When the pressure plate is pressed against the transfer element, the pressure distribution is inevitably caused by the structure (4). In addition to the effect of the transfer accuracy of the transfer, it is also difficult to increase the transfer area. On the other hand, if it is made of a brittle material: If the material is used for a long time, if it is increased by 1 for the ride, it may cause the mold of the brittle material to be difficult: 疋 Γ: Γ development 'another upgrade effective turn The printing area is difficult. Therefore, people who have achieved large-area, high-height, high-precision and high-quality (Β) 5 1343512 quality imprint quality requirements must be improved for the pressure application method used in the process. In recent years, many published literatures have successively proposed improved methods for improving the uniformity and parallelism of P, the uneven distribution of low-pressure printing force, and the improvement of area limitation. It can be seen that the improved method of nano (4) technology is gradually receiving attention and attention from all parties.
另一方面，當特徵尺寸縮小至100奈米以下，其所能 允命的誤差也隨之縮小。t轉印所使用的基板與模具的表 面品質法隨之提昇，將導致轉印缺陷的大量產生。目前奈 米轉印技術所採用的模具與基板材料大多以矽晶圓為主了 石夕晶圓表面品質對轉印結構品㈣為重要，目前量產之晶 圓表面ασ質無淪其傾斜度、表面粗糙度以及表面曲率都介 於微米等級，對奈米轉印而言不甚理想。Α了改善晶圓表 面品質所造成的缺陷，通常會施加較大的壓印力，使晶圓 產生變形，以達到貼合的目的，因為施加大壓力進行轉印，On the other hand, when the feature size is reduced to less than 100 nm, the error that can be tolerated is also reduced. The surface quality method of the substrate and the mold used for the transfer of the t-transfer is increased, resulting in a large amount of transfer defects. At present, most of the molds and substrate materials used in nano transfer technology are based on ruthenium wafers. The surface quality of Shixi wafers is important for transfer structure products (4). At present, the surface of the wafers produced by ασ is flawless. The surface roughness and surface curvature are all in the micron range, which is not ideal for nano transfer. In order to improve the defects caused by the surface quality of the wafer, a large embossing force is usually applied to deform the wafer to achieve the purpose of bonding, because a large pressure is applied for transfer.
旎使杈具與基板貼合，達到均勻轉印的目的。但若貼合過 程所產生之微量變形發生於圖樣區域（patterned area)， 會導致轉印不均勻，進而影響最終成品的良率。 有鑑於此，本案的發明動機即由此而產生。本案申請 人鑑於時代潮流之所需，乃經悉心試驗與研究，並一本鍥 而不捨之精神’終於提出一種具溝槽結構的轉印本體，以 有效的克服上述技術中之缺失。 【發明内容】 本發明之-構想係提供一種奈米壓印系統，該系統包 含，一模具、一基板、一成型材料以及一轉印設備’其中 =莫具^係具有—第—轉印接觸面及—第—非轉印接觸 二該第-轉印接觸面上係具有—微結構圖樣（邮如） 域.，該基板上具有一第二轉印接觸面及一第二非轉印接 一面，而該成财料係置放於該第二轉印接觸面上；其中， 屢槽、’、。構係㊉成於該第—及該第二非轉印接觸面至少其 中之一；而該轉印設備則用以對該模具與該基板其中之二 進行施壓，以㈣成型㈣在該第—及該k轉印接觸面 上成型。 根據上述構想’其中該模具上係具有—微結構的模仁。 根據上述構想，其中該轉印設備係具有一均壓單元。 根據上述構想，其中該均壓單元係為一液壓囊及一 壓薄膜其中之一。 、 ” 人本發明之又一構想係提出一種奈米壓印系統，該系統 包含—模具、—基板、—成型材料、-溝槽結構以及-轉 又備，其中该模具上係具有一第一轉印接觸面及一第一 非轉印接觸面；該基板上係具有一第二轉印接觸面及一第 二非轉印接觸面；該成型材料係置放於該第二轉印接觸面 上；該溝槽結構係形成於該第一及該第二非轉印接觸面至 少其中之一；而該轉印設備則係用以對該模具與該基板其 中之一進行施壓，以使該成型材料在該第一及該第二轉印 接觸面上成型。 根據上述構想，其中該模具上係具有一微結構的模仁。 根據上述構想，其中該第一轉印接觸面上係具有一微 結構圖樣（pattern)。 134351.2 根據上述構想，其中該轉印設備係具有一均壓單元。 壓薄構想’其中該均壓單元係為-液嫩-氣 之又-構想係提出—種於奈米㈣的轉印方 ί ί方法係至少包含下砂驟：⑴提供-模具，其具 接觸面=印接觸面及—第—非轉印接觸面，其中該轉印 接觸面上係具有一微結構圖樣區域；（2)提供—立 具有一第二轉印接觸面及一第二 土 ’、 第-與第二非轉印接觸面至少其中之—上+(3)、於a 槽結構；（4)於該第二轉印/ 4 趄祉一絲, 1按啁囟上5又置一成型材料；（5) k供-轉印⑦備’用以對該模具與該基板其中之一施 壓’以使該成型材料係對應該微結構圖樣而成型。 根據上述構想，其中更包含在形成該至少—溝槽 的非轉印接觸面上進行微量钱刻，以增加該 的表面品質與機械強度。 W卩接觸面 根據上述構想，其中該轉印設備係具有一均壓單元。 根據上述構想，其中該均壓軍 壓薄膜其中之一。 以係4錢囊及-氣 了解本發明得藉由下列圖式及詳細說明，俾得—更深入之 【實施方式】 請參閱第！圖，其係表示根據本發明 例的一奈米壓印製程的示意圖。如第1圖中所示 愿印製程係透過於-模具2G的—非轉印接 ^J = (S) 1343512 至少一溝槽結構30，以使得該模具在遭受壓印的過程中， 該模具20上的該溝槽結構30能具有吸收微變性量之撓曲 能力，以讓該模具的該轉印接觸面上的微結構圖樣能夠緊 •密的與設置在-基板10上方的一成型材料5〇緊密壓合， •以精密地將該微結構的圖樣成型到該成型材料5〇上。由於 該模具20的溝槽結構30具有吸收該模具微量形變的能 力，因此對於轉印過程中的均勻性以及該模具的耐壓強度 都有提升的效果。另外，由於該溝槽結構3〇係形成於該模 馨具20的非轉印接觸面，而該模具2〇的轉印接處面仍維持 平坦的狀態’因此’該該溝槽結構3()對於轉印過程中該模 具20與該基板1G的轉印躺面不會造成應力㈣，或接 觸不連續等不良影響。另外，在其他替代的實施例中，形 成該溝槽結構30的非轉印接觸面可以實施微量__ 程’以增加該非轉印接觸面的表面品質與機械強度。除此 =卜，在-具體實_中，該騎結構3{)可以形成於該模 '上的圖樣區域之外，以使該模具2〇的微變形量集中 到4圖樣區域之外’而避免影響到該圖樣區域内的廢印成 另方面，在第2圓中係表示本發明的另一個替代實 =、如第2圖中所示，前述實施例中的溝槽結構除 7如第1圖中所示形成於該模具2()的非轉印接觸面以 二，：：形成於該基板10的非轉印接觸面上。必須注意 2二兮其士圖中雖然表示該溝槽結構30同時形成於該模具 …土反10上’但單獨形成於該基板1〇的非轉印接觸 9 1343512 =’也同樣可以達到促進轉印成型的均勻性與完整 慢點。 繼續參閱第3圖，其係表示本發明的—奈米屢印系 刚係如r圖中所示’該奈_p系統 如前述具體實施例t所述，該基板⑺與該模具 且的^印^有一轉印接觸及一非轉印接觸面，其中該模 、接觸面上會具有-微結構圖樣（减⑽）的模 :成成型材料進行愿印成型。在壓印進行之前，、 ϋ G係置放於該基板的轉印接觸面上。如前面所 的轉印接觸面係為-平坦表面，用以置放該 ^ ^模具20的非轉印接觸面上則是形成有 =結構3°’用以緩衝該模具2。的微變形量= t !印設備係由-壓力產生源（沒有表示於圖 源產生=壓力車元^與一 ί台60所構成，藉由該壓力產生 壓力源均勺的ίΐ該均壓單元7G上，透過該均壓單元將該 =時在轉？每一單位面積上，以達到均勻施㈣ 藉由該溝料mi財’該料2 q上_變形量能 加貼合，以衝’以使該模具20與該基板10更 卜該均料實施例 -。另-方而w 壓囊及一乳壓薄膜結構其中之 形成於該’第4圖中所示，該溝槽結構30同樣可以 程印接觸面上，而且在_印的過 由該基板的非轉印接觸面與該均麗單元7〇接觸而接 1343512旎The cookware is bonded to the substrate to achieve uniform transfer. However, if the slight deformation caused by the bonding process occurs in the patterned area, the transfer will be uneven, which will affect the yield of the final product. In view of this, the motivation of the invention in this case arises from this. In view of the trend of the times, the applicant of this case has carefully tested and researched, and a spirit of perseverance has finally proposed a transfer body with a groove structure to effectively overcome the lack of the above technology. SUMMARY OF THE INVENTION The present invention is directed to a nanoimprinting system comprising a mold, a substrate, a molding material, and a transfer device, wherein the substrate has a first transfer contact The surface of the first transfer-contact surface has a micro-pattern (post), the substrate has a second transfer contact surface and a second non-transfer interface One side, and the material is placed on the second transfer contact surface; wherein, the groove, ',. a structure of at least one of the first and the second non-transfer contact surface; and the transfer device is configured to apply pressure to the mold and the second of the substrate to (4) form (4) in the - and the k transfer surface is formed. According to the above concept, wherein the mold has a micro-structured mold. According to the above concept, wherein the transfer device has a pressure equalizing unit. According to the above concept, the pressure equalizing unit is one of a hydraulic bladder and a pressure film. Another idea of the present invention is to provide a nanoimprinting system comprising a mold, a substrate, a molding material, a groove structure, and a transfer, wherein the mold has a first a transfer contact surface and a first non-transfer contact surface; the substrate has a second transfer contact surface and a second non-transfer contact surface; the molding material is placed on the second transfer contact surface The groove structure is formed on at least one of the first and second non-transfer contact surfaces; and the transfer device is configured to press one of the mold and the substrate to The molding material is formed on the first and second transfer contact faces. According to the above concept, the mold has a microstructured mold core. According to the above concept, the first transfer contact surface has A microstructure pattern 134351.2 According to the above concept, wherein the transfer device has a pressure equalizing unit. The thinning concept is in which the pressure equalizing unit is - liquid tender - gas is again - the concept is proposed - Nano (four) transfer method ί ί method Containing less sand: (1) providing a mold with a contact surface = printed contact surface and - a non-transfer contact surface, wherein the transfer contact surface has a microstructured pattern area; (2) providing - Having a second transfer contact surface and a second soil ', at least one of the first and second non-transfer contact surfaces, + (3), in a groove structure; (4) in the second transfer / 4 趄祉 a silk, 1 press the upper 5 and set a molding material; (5) k supply-transfer 7 preparation 'to press the mold and one of the substrate' to make the molding material correspond According to the above concept, the method further includes performing micro-etching on the non-transfer contact surface forming the at least—trench to increase the surface quality and mechanical strength. The W卩 contact surface is according to the above concept. Wherein the transfer device has a pressure equalizing unit. According to the above concept, one of the pressure-pressured military films. The invention is understood by the following figures and detailed descriptions. - Further [Implementation] Please refer to the figure! A schematic diagram of a nanoimprinting process of the example. As shown in FIG. 1, the printing process is passed through a non-transfer connection of the mold 2G to the at least one groove structure 30, so that the During the embossing process, the groove structure 30 on the mold 20 can have the ability to absorb the deflection of the micro-denatured amount, so that the microstructure of the transfer contact surface of the mold can be tightly packed. Pressing a molding material 5〇 disposed above the substrate 10, and precisely molding the pattern of the microstructure onto the molding material 5〇. Since the groove structure 30 of the mold 20 has a small amount of absorption of the mold The ability to deform, thus improving the uniformity in the transfer process and the compressive strength of the mold. In addition, since the groove structure 3 is formed on the non-transfer contact surface of the mold member 20, The transfer joint surface of the mold 2 is still maintained in a flat state. Therefore, the groove structure 3 () does not cause stress on the transfer lying surface of the mold 20 and the substrate 1G during the transfer process. Or adverse effects such as discontinuity of contact. Additionally, in other alternative embodiments, the non-transfer contact surface forming the trench structure 30 can be implemented in a micro-step to increase the surface quality and mechanical strength of the non-transfer contact surface. In addition to this, in the specific embodiment, the riding structure 3{) may be formed outside the pattern area on the mold', so that the micro-deformation amount of the mold 2〇 is concentrated outside the 4 pattern area' To avoid affecting the waste printing in the pattern area, another alternative in the second circle is shown in the second circle. As shown in FIG. 2, the groove structure in the foregoing embodiment is in addition to 7 The non-transfer contact surface formed on the mold 2 () shown in Fig. 2 is formed on the non-transfer contact surface of the substrate 10. It must be noted that the 2 兮 兮 图 图 表示 表示 表示 表示 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽 沟槽Print uniformity and complete slowness. Continuing to refer to Fig. 3, which shows the nano-printing system of the present invention as shown in the figure of r, the nano-p system is as described in the foregoing specific embodiment t, the substrate (7) and the mold are The printing has a transfer contact and a non-transfer contact surface, wherein the mold and the contact surface have a mold with a microstructure pattern (minus (10)): the molding material is formed into a mold. Before the imprinting is performed, the ϋ G system is placed on the transfer contact surface of the substrate. The transfer contact surface as previously described is a flat surface on which the non-transfer contact surface for placing the mold 20 is formed with a structure of 3° to buffer the mold 2. The amount of micro-deformation = t ! The printing equipment is composed of a pressure generating source (not shown in the source of the source = the pressure of the vehicle element ^ and a set of 60, by which the pressure source is generated by the pressure equalizing unit On the 7G, through the pressure equalizing unit, the = time is transferred to each unit area to achieve uniform application (4), and the material can be affixed by the groove material. In order to make the mold 20 and the substrate 10 more uniform, the other embodiment, the pressure capsule and the emulsion film structure are formed in the 'fourth figure, and the groove structure 30 is the same. The printing surface can be printed, and the non-transfer contact surface of the substrate is contacted with the uniform unit 7〇 and connected to 1343512.
N 受該壓力源的施壓。 請繼續參閱第5及第6圖，其係進一步表示本發明的 的奈米壓印的轉印技術的另一個較佳具體實施方式。如第 . 5及第6圖中所示’在本具體實施例中，該轉印製程係在 .—壓力艙80中實施，以取代該均壓單元70的設置。同樣 的’依據本發明之構想所設計來增加轉印製程之均勻性的 溝槽結構30係形成於該基板1〇或該模具2〇的非轉印接觸 面上’而且為了提升該溝槽結構30對轉印製成的改善效 鲁果’具有溝槽結構30的元件可以置放在承受壓力的頂部。 在刚置作業完成後’藉由在該壓力艙8〇中通入高壓的氣歷 氣體即可使該具有溝槽結構30的轉印單元（可以是該基板 10或该模具20)承受均勻的壓印力。如前面所述，在轉印 的過程中該轉印單元上的溝槽結構3〇因具有較佳的換曲 能力，因而能夠使該模具20與該基板1〇更緊密的貼合， 進而可以避免局部區域的轉印不完全，以及圖樣不均勻的 現象發生。 籲 综合以上所述，本發明係提出一種具溝槽結構的轉印 單元以提昇奈米壓印之轉印系統的均勻轉印效果。然而， 必須說明的是，上述實施例僅用以說明本發明之較佳實施 方式，然而本發明之範圍當不受限於該上述之各項具體實 施方式；且本發明得由熟悉技藝之人任施匠思而為諸般修 飾’然不脫如附申請範圍所欲保護者。 【圖式簡單說明】 第1圖及第2圖係表示根據本發明的一種奈米壓印製 1343512 程一較佳具體實施例的示意圖。 第3圖及第4圖係表示根據本發明的一種齐 統—較佳具體實施例的示意圖。 τ^ 、 第5圖及第6圖係表示根據本發明的一種奈米壓印系 統的另一較佳具體實施例的示意圖。 元件符號說明】 基板 20 模具 溝槽結構 50 成型材料 載台 70 均壓單元 壓力艙N is pressurized by the pressure source. Continuing to refer to Figures 5 and 6, which further illustrate another preferred embodiment of the nanoimprint transfer technique of the present invention. As shown in Figs. 5 and 6, in the present embodiment, the transfer process is implemented in a pressure chamber 80 in place of the setting of the pressure equalizing unit 70. Similarly, a groove structure 30 designed to increase the uniformity of the transfer process according to the concept of the present invention is formed on the non-transfer contact surface of the substrate 1 or the mold 2' and in order to lift the groove structure An improved effect of 30 pairs of transfer made. The element having the grooved structure 30 can be placed on top of the pressure-bearing. After the completion of the operation, the transfer unit having the groove structure 30 (which may be the substrate 10 or the mold 20) can be uniformly received by introducing a high-pressure gas gas into the pressure chamber 8〇. Imprinting force. As described above, the groove structure 3 on the transfer unit has a better ability to change the curvature during the transfer process, so that the mold 20 can be more closely attached to the substrate 1 , and thus Avoid incomplete transfer of the local area and uneven pattern. In summary, the present invention provides a transfer unit having a grooved structure to enhance the uniform transfer effect of the nanoimprinted transfer system. However, it should be noted that the above-described embodiments are merely illustrative of preferred embodiments of the present invention, but the scope of the present invention is not limited to the specific embodiments described above; and the present invention is known to those skilled in the art. Anything that is modified by the craftsmanship is not to be removed as the scope of the application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 and Fig. 2 are views showing a preferred embodiment of a nanoimprint 1343512 process according to the present invention. 3 and 4 are views showing a homogeneous embodiment of a preferred embodiment in accordance with the present invention. τ^, Fig. 5 and Fig. 6 are views showing another preferred embodiment of a nanoimprinting system according to the present invention. Component Symbol Description Substrate 20 Mold Groove Structure 50 Molding Material Stage 70 Pressure Equalization Unit Pressure Chamber
【主 1〇 3〇 60[Main 1〇 3〇 60