TWI407497B - 多區域處理系統及處理頭 - Google Patents
多區域處理系統及處理頭 Download PDFInfo
- Publication number
- TWI407497B TWI407497B TW097134166A TW97134166A TWI407497B TW I407497 B TWI407497 B TW I407497B TW 097134166 A TW097134166 A TW 097134166A TW 97134166 A TW97134166 A TW 97134166A TW I407497 B TWI407497 B TW I407497B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- substrate
- head
- processing head
- wall
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
- B05D1/08—Flame spraying
- B05D1/10—Applying particulate materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
- B05B14/30—Arrangements for collecting, re-using or eliminating excess spraying material comprising enclosures close to, or in contact with, the object to be sprayed and surrounding or confining the discharged spray or jet but not the object to be sprayed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B16/00—Spray booths
- B05B16/80—Movable spray booths
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97050007P | 2007-09-06 | 2007-09-06 | |
| US11/965,689 US8039052B2 (en) | 2007-09-06 | 2007-12-27 | Multi-region processing system and heads |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200939323A TW200939323A (en) | 2009-09-16 |
| TWI407497B true TWI407497B (zh) | 2013-09-01 |
Family
ID=40429341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097134166A TWI407497B (zh) | 2007-09-06 | 2008-09-05 | 多區域處理系統及處理頭 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8039052B2 (de) |
| EP (1) | EP2186116A4 (de) |
| JP (1) | JP5357159B2 (de) |
| KR (1) | KR101534886B1 (de) |
| CN (1) | CN101842874B (de) |
| TW (1) | TWI407497B (de) |
| WO (1) | WO2009032960A1 (de) |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040261712A1 (en) * | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
| US8287647B2 (en) * | 2007-04-17 | 2012-10-16 | Lam Research Corporation | Apparatus and method for atomic layer deposition |
| US8092599B2 (en) * | 2007-07-10 | 2012-01-10 | Veeco Instruments Inc. | Movable injectors in rotating disc gas reactors |
| US20090081360A1 (en) * | 2007-09-26 | 2009-03-26 | Fedorovskaya Elena A | Oled display encapsulation with the optical property |
| US8333839B2 (en) * | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
| US8129288B2 (en) * | 2008-05-02 | 2012-03-06 | Intermolecular, Inc. | Combinatorial plasma enhanced deposition techniques |
| US8089055B2 (en) * | 2008-02-05 | 2012-01-03 | Adam Alexander Brailove | Ion beam processing apparatus |
| US8882917B1 (en) * | 2009-12-31 | 2014-11-11 | Intermolecular, Inc. | Substrate processing including correction for deposition location |
| US8470718B2 (en) * | 2008-08-13 | 2013-06-25 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
| US20100037824A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Plasma Reactor Having Injector |
| US20100037820A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor Deposition Reactor |
| US8770142B2 (en) * | 2008-09-17 | 2014-07-08 | Veeco Ald Inc. | Electrode for generating plasma and plasma generator |
| US8851012B2 (en) * | 2008-09-17 | 2014-10-07 | Veeco Ald Inc. | Vapor deposition reactor using plasma and method for forming thin film using the same |
| US20100075051A1 (en) * | 2008-09-24 | 2010-03-25 | Curtis William Darling | Method and apparatus for a shield blade |
| US20100178433A1 (en) * | 2009-01-14 | 2010-07-15 | Gm Global Technology Operations, Inc. | Method and apparatus for applying bonding adhesive |
| US8871628B2 (en) * | 2009-01-21 | 2014-10-28 | Veeco Ald Inc. | Electrode structure, device comprising the same and method for forming electrode structure |
| US8257799B2 (en) | 2009-02-23 | 2012-09-04 | Synos Technology, Inc. | Method for forming thin film using radicals generated by plasma |
| US10655219B1 (en) * | 2009-04-14 | 2020-05-19 | Goodrich Corporation | Containment structure for creating composite structures |
| US8758512B2 (en) * | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
| US20110033638A1 (en) * | 2009-08-10 | 2011-02-10 | Applied Materials, Inc. | Method and apparatus for deposition on large area substrates having reduced gas usage |
| JP5287592B2 (ja) * | 2009-08-11 | 2013-09-11 | 東京エレクトロン株式会社 | 成膜装置 |
| US20110076421A1 (en) * | 2009-09-30 | 2011-03-31 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film on curved surface |
| TWI458557B (zh) * | 2009-11-26 | 2014-11-01 | Hon Hai Prec Ind Co Ltd | 噴塗遮蔽結構及採用該結構之噴塗遮蔽方法 |
| US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
| DE102009060649A1 (de) * | 2009-12-22 | 2011-06-30 | EISENMANN Anlagenbau GmbH & Co. KG, 71032 | Anlage zur Oberflächenbehandlung von Gegenständen |
| US9190289B2 (en) | 2010-02-26 | 2015-11-17 | Lam Research Corporation | System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas |
| TW201200614A (en) * | 2010-06-29 | 2012-01-01 | Hon Hai Prec Ind Co Ltd | Coating device |
| US9967965B2 (en) | 2010-08-06 | 2018-05-08 | Lam Research Corporation | Distributed, concentric multi-zone plasma source systems, methods and apparatus |
| US8999104B2 (en) | 2010-08-06 | 2015-04-07 | Lam Research Corporation | Systems, methods and apparatus for separate plasma source control |
| US9155181B2 (en) | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
| US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
| FI20105908A0 (fi) * | 2010-08-30 | 2010-08-30 | Beneq Oy | Laite |
| FI124113B (fi) * | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
| ITMO20100263A1 (it) * | 2010-09-21 | 2012-03-22 | Vincenzo Rina | Apparecchiatura per la verniciatura di scafi di imbarcazioni navali o simili |
| US8188575B2 (en) | 2010-10-05 | 2012-05-29 | Skyworks Solutions, Inc. | Apparatus and method for uniform metal plating |
| US8771791B2 (en) | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
| GB201102337D0 (en) * | 2011-02-09 | 2011-03-23 | Univ Ulster | A plasma based surface augmentation method |
| US8840958B2 (en) | 2011-02-14 | 2014-09-23 | Veeco Ald Inc. | Combined injection module for sequentially injecting source precursor and reactant precursor |
| US8877300B2 (en) | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
| US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
| US20130025688A1 (en) * | 2011-07-28 | 2013-01-31 | Intermolecular, Inc. | No-Contact Wet Processing Tool with Fluid Barrier |
| US8715518B2 (en) * | 2011-10-12 | 2014-05-06 | Intermolecular, Inc. | Gas barrier with vent ring for protecting a surface region from liquid |
| KR101819721B1 (ko) * | 2011-04-07 | 2018-02-28 | 피코순 오와이 | 플라즈마 소오스를 갖는 원자층 퇴적 |
| CN103031535B (zh) * | 2011-09-28 | 2015-12-09 | 核心能源实业有限公司 | 薄膜工艺设备及其制作方法 |
| US9177762B2 (en) | 2011-11-16 | 2015-11-03 | Lam Research Corporation | System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing |
| US10283325B2 (en) | 2012-10-10 | 2019-05-07 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
| US8617409B2 (en) * | 2011-11-22 | 2013-12-31 | Intermolecular, Inc. | Magnetically levitated gas cell for touchless site-isolated wet processing |
| US20130136864A1 (en) * | 2011-11-28 | 2013-05-30 | United Technologies Corporation | Passive termperature control of hpc rotor coating |
| US8663977B2 (en) * | 2011-12-07 | 2014-03-04 | Intermolecular, Inc. | Vertically retractable flow cell system |
| US20130196053A1 (en) * | 2012-01-10 | 2013-08-01 | State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon Stat | Flow cell design for uniform residence time fluid flow |
| JP2015517031A (ja) * | 2012-03-29 | 2015-06-18 | ビーコ・エーエルディー インコーポレイテッド | 基板処理用走査噴射装置アセンブリモジュール |
| US20130323422A1 (en) * | 2012-05-29 | 2013-12-05 | Applied Materials, Inc. | Apparatus for CVD and ALD with an Elongate Nozzle and Methods Of Use |
| FI124298B (en) * | 2012-06-25 | 2014-06-13 | Beneq Oy | Device for treating substrate surface and nozzle head |
| US8663397B1 (en) | 2012-10-22 | 2014-03-04 | Intermolecular, Inc. | Processing and cleaning substrates |
| US8821985B2 (en) * | 2012-11-02 | 2014-09-02 | Intermolecular, Inc. | Method and apparatus for high-K gate performance improvement and combinatorial processing |
| DE102012111218A1 (de) * | 2012-11-21 | 2014-05-22 | Emdeoled Gmbh | Materialabgabekopf, Materialabgabeeinrichtung und Verfahren |
| US9023438B2 (en) * | 2012-12-17 | 2015-05-05 | Intermolecular, Inc. | Methods and apparatus for combinatorial PECVD or PEALD |
| EP2935643B1 (de) * | 2012-12-21 | 2018-08-01 | Doosan Fuel Cell America, Inc. | Abscheidungswolkenturm mit einstellbarem feld |
| FI126043B (en) * | 2013-06-27 | 2016-06-15 | Beneq Oy | Method and device for coating a surface of a substrate |
| US10155244B2 (en) * | 2013-09-16 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fluid deposition appartus and method |
| JP2015100761A (ja) * | 2013-11-26 | 2015-06-04 | 曙ブレーキ工業株式会社 | 支持具、粉体塗布システム、粉体塗布方法、及びキャリパ |
| US10145013B2 (en) | 2014-01-27 | 2018-12-04 | Veeco Instruments Inc. | Wafer carrier having retention pockets with compound radii for chemical vapor desposition systems |
| JP6717191B2 (ja) * | 2014-04-18 | 2020-07-01 | 株式会社ニコン | 成膜装置、基板処理装置、および、デバイス製造方法 |
| US9209062B1 (en) * | 2014-05-28 | 2015-12-08 | Spintrac Systems, Inc. | Removable spin chamber with vacuum attachment |
| JP5792364B1 (ja) * | 2014-07-31 | 2015-10-07 | 株式会社日立国際電気 | 基板処理装置、チャンバリッドアセンブリ、半導体装置の製造方法、プログラム及び記録媒体 |
| US9837254B2 (en) | 2014-08-12 | 2017-12-05 | Lam Research Corporation | Differentially pumped reactive gas injector |
| US10825652B2 (en) | 2014-08-29 | 2020-11-03 | Lam Research Corporation | Ion beam etch without need for wafer tilt or rotation |
| US9406535B2 (en) | 2014-08-29 | 2016-08-02 | Lam Research Corporation | Ion injector and lens system for ion beam milling |
| US9536748B2 (en) | 2014-10-21 | 2017-01-03 | Lam Research Corporation | Use of ion beam etching to generate gate-all-around structure |
| JP6494417B2 (ja) * | 2015-05-20 | 2019-04-03 | 株式会社ディスコ | プラズマエッチング装置 |
| KR102420015B1 (ko) * | 2015-08-28 | 2022-07-12 | 삼성전자주식회사 | Cs-ald 장치의 샤워헤드 |
| US10403515B2 (en) * | 2015-09-24 | 2019-09-03 | Applied Materials, Inc. | Loadlock integrated bevel etcher system |
| US20170194174A1 (en) * | 2015-12-30 | 2017-07-06 | Applied Materials, Inc. | Quad chamber and platform having multiple quad chambers |
| DE102016200506B4 (de) * | 2016-01-17 | 2024-05-02 | Robert Bosch Gmbh | Ätzvorrichtung und Ätzverfahren |
| US9779955B2 (en) | 2016-02-25 | 2017-10-03 | Lam Research Corporation | Ion beam etching utilizing cryogenic wafer temperatures |
| FR3058424B1 (fr) * | 2016-11-10 | 2022-06-10 | Bnl Eurolens | Installation de depot par evaporation d'un revetement sur des articles |
| US11505864B2 (en) | 2017-06-21 | 2022-11-22 | Picosun Oy | Adjustable fluid inlet assembly for a substrate processing apparatus and method |
| KR102452830B1 (ko) * | 2017-12-12 | 2022-10-12 | 삼성전자주식회사 | 반도체 공정 챔버 |
| US20200135464A1 (en) * | 2018-10-30 | 2020-04-30 | Applied Materials, Inc. | Methods and apparatus for patterning substrates using asymmetric physical vapor deposition |
| KR102620219B1 (ko) * | 2018-11-02 | 2024-01-02 | 삼성전자주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| KR20250011246A (ko) | 2019-02-28 | 2025-01-21 | 램 리써치 코포레이션 | 측벽 세정을 사용한 이온 빔 에칭 |
| KR102673983B1 (ko) * | 2019-03-15 | 2024-06-12 | 주식회사 케이씨텍 | 기판 처리 장치 |
| JP7464692B2 (ja) * | 2019-07-26 | 2024-04-09 | アプライド マテリアルズ インコーポレイテッド | 基板上にフィルムを形成するための蒸発器チャンバ |
| AT522169B1 (de) * | 2019-10-16 | 2020-09-15 | Ess Holding Gmbh | Vorrichtung zur Oberflächenbehandlung eines Werkstückes in einer Fertigungsstraße |
| JP7060633B2 (ja) * | 2020-01-29 | 2022-04-26 | キヤノントッキ株式会社 | 成膜装置及び電子デバイス製造装置 |
| JP7098677B2 (ja) * | 2020-03-25 | 2022-07-11 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
| KR20220160034A (ko) * | 2020-03-25 | 2022-12-05 | 솔리얀 엘엘씨 | 도전성 재료를 제조하기 위한 인쇄 헤드 및 연속 공정 |
| CN111778552B (zh) * | 2020-08-03 | 2021-10-08 | 中国科学院长春光学精密机械与物理研究所 | 一种mocvd组合喷淋头及mocvd设备 |
| JP7590141B2 (ja) * | 2020-09-15 | 2024-11-26 | キヤノントッキ株式会社 | スパッタ装置及び成膜方法 |
| KR102737901B1 (ko) * | 2021-12-13 | 2024-12-04 | 한양대학교 에리카산학협력단 | 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치 |
| CN117660930A (zh) * | 2022-08-31 | 2024-03-08 | 长鑫存储技术有限公司 | 喷淋头、沉积设备及其工作方法 |
| US20250034706A1 (en) * | 2023-07-25 | 2025-01-30 | The Regents Of The University Of Michigan | Two-Axis Printing for More Uniform Films in an Atmospheric-Pressure Spatial Atomic Layer Deposition Process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6746539B2 (en) * | 2001-01-30 | 2004-06-08 | Msp Corporation | Scanning deposition head for depositing particles on a wafer |
| US20060127599A1 (en) * | 2002-02-12 | 2006-06-15 | Wojak Gregory J | Process and apparatus for preparing a diamond substance |
Family Cites Families (93)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3641973A (en) * | 1970-11-25 | 1972-02-15 | Air Reduction | Vacuum coating apparatus |
| DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
| US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
| US5171360A (en) * | 1990-08-30 | 1992-12-15 | University Of Southern California | Method for droplet stream manufacturing |
| US5292400A (en) * | 1992-03-23 | 1994-03-08 | Hughes Aircraft Company | Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching |
| JP2872891B2 (ja) * | 1993-08-06 | 1999-03-24 | 株式会社東芝 | 気化装置 |
| JPH07201752A (ja) * | 1993-12-27 | 1995-08-04 | Toray Ind Inc | 薄膜形成装置及び薄膜形成方法 |
| US5529815A (en) * | 1994-11-03 | 1996-06-25 | Lemelson; Jerome H. | Apparatus and method for forming diamond coating |
| JP3276278B2 (ja) * | 1994-12-08 | 2002-04-22 | キヤノン株式会社 | 記録液定着装置およびこれを具備する液体噴射記録装置 |
| DE4445985A1 (de) * | 1994-12-22 | 1996-06-27 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zur Belackung oder Beschichtung eines Substrats |
| US5811021A (en) * | 1995-02-28 | 1998-09-22 | Hughes Electronics Corporation | Plasma assisted chemical transport method and apparatus |
| US5614026A (en) * | 1996-03-29 | 1997-03-25 | Lam Research Corporation | Showerhead for uniform distribution of process gas |
| JP3278714B2 (ja) * | 1996-08-30 | 2002-04-30 | 東京エレクトロン株式会社 | 塗布膜形成装置 |
| US5911834A (en) * | 1996-11-18 | 1999-06-15 | Applied Materials, Inc. | Gas delivery system |
| EP0987700B1 (de) * | 1997-05-08 | 2004-08-25 | Matsushita Electric Industrial Co., Ltd. | Vorrichtung und verfahren zur herstellung eines aufzeichnungsträgers |
| JPH1150237A (ja) * | 1997-07-30 | 1999-02-23 | Toshiba Glass Co Ltd | 真空成膜装置 |
| JP4003273B2 (ja) * | 1998-01-19 | 2007-11-07 | セイコーエプソン株式会社 | パターン形成方法および基板製造装置 |
| US6261365B1 (en) * | 1998-03-20 | 2001-07-17 | Tokyo Electron Limited | Heat treatment method, heat treatment apparatus and treatment system |
| US6368665B1 (en) * | 1998-04-29 | 2002-04-09 | Microcoating Technologies, Inc. | Apparatus and process for controlled atmosphere chemical vapor deposition |
| US6673155B2 (en) * | 1998-10-15 | 2004-01-06 | Tokyo Electron Limited | Apparatus for forming coating film and apparatus for curing the coating film |
| JP2000349078A (ja) * | 1999-06-03 | 2000-12-15 | Mitsubishi Electric Corp | 化学気相成長装置および半導体装置の製造方法 |
| JP3662779B2 (ja) * | 1999-06-22 | 2005-06-22 | シャープ株式会社 | プラズマ処理装置 |
| US6245392B1 (en) * | 1999-08-27 | 2001-06-12 | Stephen J. Hillenbrand | Coater apparatus and method |
| US6468350B1 (en) * | 1999-08-27 | 2002-10-22 | Stephen J. Hillenbrand | Mobile coater apparatus |
| US6491759B1 (en) * | 2000-03-14 | 2002-12-10 | Neocera, Inc. | Combinatorial synthesis system |
| JP2001276702A (ja) * | 2000-03-28 | 2001-10-09 | Toshiba Corp | 成膜装置及び成膜方法 |
| WO2002008487A1 (en) * | 2000-07-24 | 2002-01-31 | The University Of Maryland, College Park | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
| GB0019848D0 (en) * | 2000-08-11 | 2000-09-27 | Rtc Systems Ltd | Apparatus and method for coating substrates |
| US6884294B2 (en) * | 2001-04-16 | 2005-04-26 | Tokyo Electron Limited | Coating film forming method and apparatus |
| JP4078813B2 (ja) * | 2001-06-12 | 2008-04-23 | ソニー株式会社 | 成膜装置および成膜方法 |
| US20030116432A1 (en) * | 2001-12-26 | 2003-06-26 | Applied Materials, Inc. | Adjustable throw reactor |
| KR100838065B1 (ko) * | 2002-05-31 | 2008-06-16 | 삼성에스디아이 주식회사 | 박막증착기용 고정장치와 이를 이용한 고정방법 |
| EP1556902A4 (de) * | 2002-09-30 | 2009-07-29 | Miasole | Herstellungsvorrichtung und verfahren zur produktion von dünnfilmsolarzellen in grossem massstab |
| US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| JP2004152702A (ja) * | 2002-10-31 | 2004-05-27 | Applied Materials Inc | マイクロ波イオン源 |
| NL1022155C2 (nl) * | 2002-12-12 | 2004-06-22 | Otb Group Bv | Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat. |
| US7380690B2 (en) * | 2003-01-17 | 2008-06-03 | Ricoh Company, Ltd. | Solution jet type fabrication apparatus, method, solution containing fine particles, wiring pattern substrate, device substrate |
| KR101032338B1 (ko) * | 2003-02-06 | 2011-05-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치의 제작방법 |
| US7972467B2 (en) * | 2003-04-17 | 2011-07-05 | Applied Materials Inc. | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor |
| JP2005002450A (ja) * | 2003-06-13 | 2005-01-06 | Pioneer Electronic Corp | 蒸着方法、蒸着ヘッド、及び有機エレクトロルミネッセンス表示パネルの製造装置 |
| EP1491653A3 (de) | 2003-06-13 | 2005-06-15 | Pioneer Corporation | Aufdampfverfahren und Aufdampfvorrichtungen |
| JP4124046B2 (ja) * | 2003-07-10 | 2008-07-23 | 株式会社大阪チタニウムテクノロジーズ | 金属酸化物被膜の成膜方法および蒸着装置 |
| TW200508413A (en) * | 2003-08-06 | 2005-03-01 | Ulvac Inc | Device and method for manufacturing thin films |
| JP4399206B2 (ja) * | 2003-08-06 | 2010-01-13 | 株式会社アルバック | 薄膜製造装置 |
| KR100958573B1 (ko) * | 2003-10-06 | 2010-05-18 | 엘지디스플레이 주식회사 | 액정표시패널의 제조장치 및 제조방법 |
| JP4258345B2 (ja) | 2003-10-20 | 2009-04-30 | セイコーエプソン株式会社 | 蒸着装置、有機エレクトロルミネッセンスパネルおよび蒸着方法 |
| US7439208B2 (en) * | 2003-12-01 | 2008-10-21 | Superconductor Technologies, Inc. | Growth of in-situ thin films by reactive evaporation |
| US8944002B2 (en) * | 2004-01-14 | 2015-02-03 | Honda Motor Co., Ltd. | High throughput physical vapor deposition system for material combinatorial studies |
| DE102004009772A1 (de) * | 2004-02-28 | 2005-09-15 | Aixtron Ag | CVD-Reaktor mit Prozesskammerhöhenstabilisierung |
| JP4169719B2 (ja) * | 2004-03-30 | 2008-10-22 | Hoya株式会社 | レジスト膜付基板の製造方法 |
| US20050241579A1 (en) * | 2004-04-30 | 2005-11-03 | Russell Kidd | Face shield to improve uniformity of blanket CVD processes |
| US7780821B2 (en) * | 2004-08-02 | 2010-08-24 | Seagate Technology Llc | Multi-chamber processing with simultaneous workpiece transport and gas delivery |
| US8882914B2 (en) * | 2004-09-17 | 2014-11-11 | Intermolecular, Inc. | Processing substrates using site-isolated processing |
| KR100790392B1 (ko) * | 2004-11-12 | 2008-01-02 | 삼성전자주식회사 | 반도체 제조장치 |
| US7789963B2 (en) * | 2005-02-25 | 2010-09-07 | Tokyo Electron Limited | Chuck pedestal shield |
| JP4676366B2 (ja) * | 2005-03-29 | 2011-04-27 | 三井造船株式会社 | 成膜装置 |
| JP2006322016A (ja) * | 2005-05-17 | 2006-11-30 | Konica Minolta Holdings Inc | 真空蒸着方法および真空蒸着装置 |
| JP4624856B2 (ja) * | 2005-05-30 | 2011-02-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4527660B2 (ja) * | 2005-06-23 | 2010-08-18 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| CN1891848A (zh) * | 2005-07-01 | 2007-01-10 | 鸿富锦精密工业(深圳)有限公司 | 光学镀膜装置 |
| CN101356620B (zh) * | 2005-10-11 | 2010-11-03 | 阿维扎技术有限公司 | 用于处理衬底的设备及其方法 |
| US7897217B2 (en) * | 2005-11-18 | 2011-03-01 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
| EP1959027A1 (de) * | 2005-12-06 | 2008-08-20 | Shinmaywa Industries, Ltd. | Plasmafilmabscheidungseinrichtung |
| EP2000008B1 (de) * | 2006-03-26 | 2011-04-27 | Lotus Applied Technology, Llc | Atomlagenabscheidungssystem und verfahren zur beschichtung von flexiblen substraten |
| WO2007129551A1 (ja) * | 2006-05-01 | 2007-11-15 | Ulvac, Inc. | 印刷装置 |
| TW200816880A (en) * | 2006-05-30 | 2008-04-01 | Matsushita Electric Industrial Co Ltd | Atmospheric pressure plasma generating method, plasma processing method and component mounting method using same, and device using these methods |
| US7722778B2 (en) * | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
| US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
| US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| US8440259B2 (en) * | 2007-09-05 | 2013-05-14 | Intermolecular, Inc. | Vapor based combinatorial processing |
| US8771483B2 (en) * | 2007-09-05 | 2014-07-08 | Intermolecular, Inc. | Combinatorial process system |
| US7572686B2 (en) * | 2007-09-26 | 2009-08-11 | Eastman Kodak Company | System for thin film deposition utilizing compensating forces |
| JP5276420B2 (ja) * | 2008-01-31 | 2013-08-28 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| US7824935B2 (en) * | 2008-07-02 | 2010-11-02 | Intermolecular, Inc. | Methods of combinatorial processing for screening multiple samples on a semiconductor substrate |
| US20100044213A1 (en) * | 2008-08-25 | 2010-02-25 | Applied Materials, Inc. | Coating chamber with a moveable shield |
| JP5075793B2 (ja) * | 2008-11-06 | 2012-11-21 | 東京エレクトロン株式会社 | 可動ガス導入構造物及び基板処理装置 |
| DE112009002468B4 (de) * | 2008-11-14 | 2020-01-02 | Ulvac, Inc. | Dünnschicht-Niederschlagsvorrichtung, organische EL-Element-Herstellungsvorrichtung und organische Dünnschicht-Niederschlagsverfahren |
| KR101067608B1 (ko) * | 2009-03-30 | 2011-09-27 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 및 기판처리방법 |
| EP2281921A1 (de) * | 2009-07-30 | 2011-02-09 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Vorrichtung und Verfahren zur Atomlagenabscheidung |
| US8657959B2 (en) * | 2009-07-31 | 2014-02-25 | E I Du Pont De Nemours And Company | Apparatus for atomic layer deposition on a moving substrate |
| US20110023775A1 (en) * | 2009-07-31 | 2011-02-03 | E.I. Du Pont De Nemours And Company | Apparatus for atomic layer deposition |
| US8529700B2 (en) * | 2009-08-31 | 2013-09-10 | E I Du Pont De Nemours And Company | Apparatus for gaseous vapor deposition |
| JP5469966B2 (ja) * | 2009-09-08 | 2014-04-16 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
| JP5439097B2 (ja) * | 2009-09-08 | 2014-03-12 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
| US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
| JP5705495B2 (ja) * | 2010-10-07 | 2015-04-22 | 株式会社日立ハイテクノロジーズ | プラズマの処理方法及びプラズマ処理装置 |
| US8728241B2 (en) * | 2010-12-08 | 2014-05-20 | Intermolecular, Inc. | Combinatorial site-isolated deposition of thin films from a liquid source |
| EP2481832A1 (de) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Vorrichtung zur Atomschichtablagerung |
| US20120238075A1 (en) * | 2011-03-09 | 2012-09-20 | Tokyo Ohka Kogyo Co., Ltd. | Coating apparatus and coating method |
| US8906207B2 (en) * | 2011-04-06 | 2014-12-09 | Intermolecular, Inc. | Control of film composition in co-sputter deposition by using collimators |
| US20130130509A1 (en) * | 2011-11-21 | 2013-05-23 | Intermolecular, Inc. | Combinatorial spot rastering for film uniformity and film tuning in sputtered films |
| US8974649B2 (en) * | 2011-12-12 | 2015-03-10 | Intermolecular, Inc. | Combinatorial RF bias method for PVD |
| US8582105B1 (en) * | 2012-06-14 | 2013-11-12 | Intermolecular, Inc. | Method and apparatus for leak detection in H2Se furnace |
-
2007
- 2007-12-27 US US11/965,689 patent/US8039052B2/en not_active Expired - Fee Related
-
2008
- 2008-09-05 EP EP08799200.4A patent/EP2186116A4/de not_active Withdrawn
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- 2008-09-05 KR KR1020107007200A patent/KR101534886B1/ko not_active Expired - Fee Related
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- 2011-05-12 US US13/106,059 patent/US8770143B2/en active Active
-
2014
- 2014-07-01 US US14/321,198 patent/US20140311408A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6746539B2 (en) * | 2001-01-30 | 2004-06-08 | Msp Corporation | Scanning deposition head for depositing particles on a wafer |
| US20060127599A1 (en) * | 2002-02-12 | 2006-06-15 | Wojak Gregory J | Process and apparatus for preparing a diamond substance |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140311408A1 (en) | 2014-10-23 |
| US20110209663A1 (en) | 2011-09-01 |
| CN101842874A (zh) | 2010-09-22 |
| EP2186116A4 (de) | 2016-10-26 |
| US8039052B2 (en) | 2011-10-18 |
| CN101842874B (zh) | 2011-12-14 |
| JP2010538168A (ja) | 2010-12-09 |
| US20090068849A1 (en) | 2009-03-12 |
| KR101534886B1 (ko) | 2015-07-07 |
| WO2009032960A1 (en) | 2009-03-12 |
| US8770143B2 (en) | 2014-07-08 |
| KR20100068411A (ko) | 2010-06-23 |
| EP2186116A1 (de) | 2010-05-19 |
| JP5357159B2 (ja) | 2013-12-04 |
| TW200939323A (en) | 2009-09-16 |
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