TWI433315B - 用於功率元件之渠道場板終止結構 - Google Patents

用於功率元件之渠道場板終止結構 Download PDF

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Publication number
TWI433315B
TWI433315B TW095143191A TW95143191A TWI433315B TW I433315 B TWI433315 B TW I433315B TW 095143191 A TW095143191 A TW 095143191A TW 95143191 A TW95143191 A TW 95143191A TW I433315 B TWI433315 B TW I433315B
Authority
TW
Taiwan
Prior art keywords
region
termination structure
semiconductor power
power device
germanium
Prior art date
Application number
TW095143191A
Other languages
English (en)
Chinese (zh)
Other versions
TW200746415A (en
Inventor
克里斯多佛Ｂ. 寇肯
Original Assignee
快捷半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 快捷半導體公司 filed Critical 快捷半導體公司
Publication of TW200746415A publication Critical patent/TW200746415A/zh
Application granted granted Critical
Publication of TWI433315B publication Critical patent/TWI433315B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
TW095143191A 2005-12-22 2006-11-22 用於功率元件之渠道場板終止結構 TWI433315B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/317,653 US7560787B2 (en) 2005-12-22 2005-12-22 Trench field plate termination for power devices

Publications (2)

Publication Number Publication Date
TW200746415A TW200746415A (en) 2007-12-16
TWI433315B true TWI433315B (zh) 2014-04-01

Family

ID=38192626

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143191A TWI433315B (zh) 2005-12-22 2006-11-22 用於功率元件之渠道場板終止結構

Country Status (8)

Country Link
US (2) US7560787B2 (fr)
JP (1) JP2009521809A (fr)
KR (1) KR101347525B1 (fr)
CN (1) CN101395719B (fr)
AT (1) AT505176A2 (fr)
DE (1) DE112006003451B4 (fr)
TW (1) TWI433315B (fr)
WO (1) WO2007117307A2 (fr)

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US7888764B2 (en) * 2003-06-24 2011-02-15 Sang-Yun Lee Three-dimensional integrated circuit structure
US7045859B2 (en) * 2001-09-05 2006-05-16 International Rectifier Corporation Trench fet with self aligned source and contact
US20110001172A1 (en) * 2005-03-29 2011-01-06 Sang-Yun Lee Three-dimensional integrated circuit structure
US8367524B2 (en) 2005-03-29 2013-02-05 Sang-Yun Lee Three-dimensional integrated circuit structure
DE112006001516T5 (de) 2005-06-10 2008-04-17 Fairchild Semiconductor Corp. Feldeffekttransistor mit Ladungsgleichgewicht
US7560787B2 (en) * 2005-12-22 2009-07-14 Fairchild Semiconductor Corporation Trench field plate termination for power devices
CN101868856B (zh) 2007-09-21 2014-03-12 飞兆半导体公司 用于功率器件的超结结构及制造方法
US7884390B2 (en) * 2007-10-02 2011-02-08 Fairchild Semiconductor Corporation Structure and method of forming a topside contact to a backside terminal of a semiconductor device
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US8169019B2 (en) * 2009-09-10 2012-05-01 Niko Semiconductor Co., Ltd. Metal-oxide-semiconductor chip and fabrication method thereof
US20110084332A1 (en) * 2009-10-08 2011-04-14 Vishay General Semiconductor, Llc. Trench termination structure
JP2011124464A (ja) * 2009-12-14 2011-06-23 Toshiba Corp 半導体装置及びその製造方法
US8476698B2 (en) 2010-02-19 2013-07-02 Alpha And Omega Semiconductor Incorporated Corner layout for superjunction device
KR101279185B1 (ko) * 2011-08-25 2013-06-27 주식회사 케이이씨 전력 반도체 소자
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US8697520B2 (en) * 2012-03-02 2014-04-15 Alpha & Omega Semiconductor Incorporationed Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS
CN103426910B (zh) * 2012-05-24 2016-01-20 杰力科技股份有限公司 功率半导体元件及其边缘终端结构
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
KR20150011185A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9178015B2 (en) * 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
US9570542B2 (en) 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
JP6600475B2 (ja) 2015-03-27 2019-10-30 ローム株式会社 半導体装置
US10263070B2 (en) 2017-06-12 2019-04-16 Alpha And Omega Semiconductor (Cayman) Ltd. Method of manufacturing LV/MV super junction trench power MOSFETs
CN110364568B (zh) * 2018-04-11 2024-02-02 中芯国际集成电路制造(上海)有限公司 Igbt器件及其形成方法
US11329150B2 (en) * 2020-04-14 2022-05-10 Nxp Usa, Inc. Termination for trench field plate power MOSFET
WO2021215505A1 (fr) * 2020-04-24 2021-10-28 京セラ株式会社 Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur
CN115377198A (zh) * 2022-09-02 2022-11-22 电子科技大学 一种vdmos器件终端结构

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US6740951B2 (en) * 2001-05-22 2004-05-25 General Semiconductor, Inc. Two-mask trench schottky diode
DE10127885B4 (de) * 2001-06-08 2009-09-24 Infineon Technologies Ag Trench-Leistungshalbleiterbauelement
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US7560787B2 (en) * 2005-12-22 2009-07-14 Fairchild Semiconductor Corporation Trench field plate termination for power devices

Also Published As

Publication number Publication date
US20090242978A1 (en) 2009-10-01
US7560787B2 (en) 2009-07-14
DE112006003451B4 (de) 2015-02-05
US20070145514A1 (en) 2007-06-28
AT505176A2 (de) 2008-11-15
US8143679B2 (en) 2012-03-27
TW200746415A (en) 2007-12-16
KR101347525B1 (ko) 2014-01-02
CN101395719A (zh) 2009-03-25
JP2009521809A (ja) 2009-06-04
CN101395719B (zh) 2012-10-03
DE112006003451T5 (de) 2008-10-23
KR20080086479A (ko) 2008-09-25
WO2007117307A2 (fr) 2007-10-18
WO2007117307A3 (fr) 2008-10-23

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