TWI494466B - 電漿成膜裝置、結晶太陽電池與半導體元件 - Google Patents

電漿成膜裝置、結晶太陽電池與半導體元件 Download PDF

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Publication number
TWI494466B
TWI494466B TW101135387A TW101135387A TWI494466B TW I494466 B TWI494466 B TW I494466B TW 101135387 A TW101135387 A TW 101135387A TW 101135387 A TW101135387 A TW 101135387A TW I494466 B TWI494466 B TW I494466B
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TW
Taiwan
Prior art keywords
substrate
film forming
forming apparatus
gas
plasma
Prior art date
Application number
TW101135387A
Other languages
English (en)
Chinese (zh)
Other versions
TW201321550A (zh
Inventor
鈴木正康
三科健
猿渡哲也
Original Assignee
島津製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2011/074318 external-priority patent/WO2013057835A1/ja
Application filed by 島津製作所股份有限公司 filed Critical 島津製作所股份有限公司
Publication of TW201321550A publication Critical patent/TW201321550A/zh
Application granted granted Critical
Publication of TWI494466B publication Critical patent/TWI494466B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32036—AC powered
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW101135387A 2011-09-26 2012-09-26 電漿成膜裝置、結晶太陽電池與半導體元件 TWI494466B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2011/071796 WO2013046286A1 (ja) 2011-09-26 2011-09-26 プラズマ成膜装置
PCT/JP2011/074318 WO2013057835A1 (ja) 2011-10-21 2011-10-21 薄膜形成装置

Publications (2)

Publication Number Publication Date
TW201321550A TW201321550A (zh) 2013-06-01
TWI494466B true TWI494466B (zh) 2015-08-01

Family

ID=47994406

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101135387A TWI494466B (zh) 2011-09-26 2012-09-26 電漿成膜裝置、結晶太陽電池與半導體元件

Country Status (5)

Country Link
JP (1) JP5768890B2 (ja)
KR (1) KR101650795B1 (ja)
CN (1) CN103890229B (ja)
TW (1) TWI494466B (ja)
WO (1) WO2013046286A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6065111B2 (ja) * 2013-05-24 2017-01-25 株式会社島津製作所 プラズマ処理装置
JP2015015382A (ja) * 2013-07-05 2015-01-22 株式会社島津製作所 成膜装置及び成膜方法
DE102015111144A1 (de) * 2015-07-09 2017-01-12 Hanwha Q.CELLS GmbH Vorrichtung zur paarweisen Aufnahme von Substraten
CN118653133A (zh) * 2016-07-21 2024-09-17 株式会社国际电气 等离子体生成装置、衬底处理装置及半导体器件的制造方法
HUE047152T2 (hu) * 2017-02-28 2020-04-28 Meyer Burger Germany Gmbh Elektródegység belsõ villamos hálózattal nagyfrekvenciás feszültség hozzávezetésére és tartószerkezet plazmakezelõ berendezéshez
CN108149225A (zh) * 2018-02-06 2018-06-12 江苏微导纳米装备科技有限公司 一种真空反应装置及反应方法
MX2022003626A (es) 2019-09-25 2022-05-03 Shibaura Machine Co Ltd Dispositivo de tratamiento de superficie.
DE102020112641A1 (de) 2020-05-11 2021-11-11 Hanwha Q Cells Gmbh Haltevorrichtung und Verwendung der Haltevorrichtung
CN111893455B (zh) * 2020-09-08 2023-10-03 河北美普兰地环保科技有限公司 金属基材碳纳米膜材料制造设备及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW562868B (en) * 2000-03-23 2003-11-21 Sharp Kk Plasma deposition device for forming thin film
JP2009164515A (ja) * 2008-01-10 2009-07-23 Shimadzu Corp 反射防止膜成膜方法および太陽電池
JP2011077323A (ja) * 2009-09-30 2011-04-14 Tokyo Electron Ltd 窒化珪素膜の成膜方法および半導体メモリ装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05209279A (ja) * 1991-10-29 1993-08-20 Canon Inc 金属膜形成装置および金属膜形成法
JP2001192835A (ja) * 2000-01-11 2001-07-17 Kanegafuchi Chem Ind Co Ltd インライン型プラズマｃｖｄ装置において用いられる基板搬送カート
WO2002020871A1 (de) 2000-09-08 2002-03-14 Centrotherm Elektrische Anlagen Gmbh + Co. Plasmaboot
JP4849316B2 (ja) * 2006-02-21 2012-01-11 株式会社Ｉｈｉ 真空成膜装置
JP2009231385A (ja) * 2008-03-19 2009-10-08 Sanyo Electric Co Ltd 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW562868B (en) * 2000-03-23 2003-11-21 Sharp Kk Plasma deposition device for forming thin film
JP2009164515A (ja) * 2008-01-10 2009-07-23 Shimadzu Corp 反射防止膜成膜方法および太陽電池
JP2011077323A (ja) * 2009-09-30 2011-04-14 Tokyo Electron Ltd 窒化珪素膜の成膜方法および半導体メモリ装置の製造方法

Also Published As

Publication number Publication date
JP5768890B2 (ja) 2015-08-26
CN103890229B (zh) 2015-12-16
KR20140037226A (ko) 2014-03-26
TW201321550A (zh) 2013-06-01
CN103890229A (zh) 2014-06-25
KR101650795B1 (ko) 2016-08-24
WO2013046286A1 (ja) 2013-04-04
JPWO2013046286A1 (ja) 2015-03-26

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