TWI665708B - 基板支撐組件及具有其之處理腔室 - Google Patents

基板支撐組件及具有其之處理腔室 Download PDF

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TWI665708B
TWI665708B TW106118870A TW106118870A TWI665708B TW I665708 B TWI665708 B TW I665708B TW 106118870 A TW106118870 A TW 106118870A TW 106118870 A TW106118870 A TW 106118870A TW I665708 B TWI665708 B TW I665708B
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substrate
lens
monitoring system
temperature monitoring
hole
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TW106118870A
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TW201810345A (zh
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Sanjay D. Yadav
尚傑 亞大夫
Shreesha Y. Rao
沙蕾莎 拉奧
Tae Kyung Won
泰景 元
Umesha Achary
烏玫莎 阿查裡雅
Himanshu Joshi
希馬蘇 橋希
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Applied Materials, Inc.
美商應用材料股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

本揭露公開的實施例通常涉及一基板支撐組件中的一基板溫度監控系統。在一實施例中，基板支撐組件包括一支撐板和一基板溫度監控系統。支撐板具有用以支撐一基板之一頂表面。基板溫度監控系統係設置於基板支撐板中。基板溫度監控系統係用以從基板的一底表面測量基板的溫度。基板溫度監控系統包括一窗口、一主體及一溫度感測器。窗口係一體地形成於支撐板的一頂表面中。主體穿過底表面而嵌入支撐板中。主體界定出一個內部通道。溫度感測器係設置於窗口下方的內部通道中。溫度感測器係用以測量基板的溫度。

Description

基板支撐組件及具有其之處理腔室
本揭露所述實施例通常涉及一種基板溫度監控系統。
平板顯示器(flat panel display，FPD)一般用於諸如電腦和電視監控器、個人數位助理(PDA)及手機等的主動矩陣顯示器(active matrix display)和太陽能電池等。電漿增強化學氣相沉積(plasma enhanced chemical vapor deposition，PECVD)可被用於平板顯示器製造中以沉積薄膜於一基板上。電漿增強化學氣相沉積通常透過在一真空處理腔室(vacuum process chamber)中產生一前驅氣體(precursor gas)至一電漿內，並從受激發的前驅氣體沉積一薄膜於一基板上來實現。
在沉積期間，真空處理腔室中的電漿加熱基板和基板支撐組件(substrate support assembly)。電漿可能使基板支撐組件的溫度具有一暫時的溫度上升或尖峰(spike)(例如從150℃上升約30至50℃或溫度上升20%至30%)。這種基板支撐組件之溫度大幅上升會不利地造成製程變化。
因此，亟需一種用於基板支撐組件之改良的基板溫度監控系統。
本揭露公開的實施例通常涉及基板支撐組件中的基板溫度監控系統。在一實施例中，本揭露公開了基板支撐組件。基板支撐組件包括一支撐板和一基板溫度監控系統。支撐板具有用以支撐一基板的一頂表面。基板溫度監控系統係設置於基板支撐板中。基板溫度監控系統係用以從基板的一底表面測量基板的溫度。基板溫度監控系統包括一窗口、一主體及一溫度感測器。窗口係一體地(integrally)形成於支撐板的頂表面中。主體穿過底表面而嵌入(embedded)支撐板中。主體界定出一個內部通道。溫度感測器係設置於窗口下方的內部通道中。溫度感測器係用以測量基板的溫度。
在另一實施例中，揭露一種基板支撐組件。此基板支撐組件包括一支撐板和一基板溫度監控系統。支撐板具有用以支撐一基板的一頂表面。基板溫度監控系統係設置於支撐板中。基板溫度監控系統係用以從基板的一底表面測量基板的溫度。基板溫度監控系統包括一主體，一孔螺母(aperture nut)、一透鏡、一光纖管及一控制器。主體界定出一內部腔(inner cavity)。孔螺母係設置於主體中。透鏡係設置於主體，且由孔螺母支撐。光纖管係設置於內部腔，並與透鏡間隔分離。光纖管係用以接收從基板的底表面通過透鏡的一紅外光射線。控制器係與光纖管相連接。控制器用以基於所接收的紅外光射線而確定基板的溫度。
在另一實施例中，揭露一種處理腔室。此處理腔室包括一腔室主體及一基板支撐組件。腔室主體包括界定腔室主體內的一處理區域之一頂壁、一側壁及一底壁。基板支撐組件係設置於處理區域中。基板支撐組件包括一支撐板及一基板溫度監控系統。支撐板具有用以支撐一基板的一頂表面。基板溫度監控系統係設置於基板支撐板中，且係用以從基板的一底表面測量基板的一溫度。
100‧‧‧腔室
101‧‧‧基板
102‧‧‧腔室主體
104‧‧‧側壁
106‧‧‧底壁
108‧‧‧噴頭
109‧‧‧開口
110‧‧‧處理容積
111‧‧‧真空泵
112‧‧‧背板
114‧‧‧懸架
116‧‧‧耦接支撐件
118‧‧‧基板支撐組件
120‧‧‧支撐板
122‧‧‧桿
124‧‧‧溫度控制元件
126‧‧‧升舉系統
128‧‧‧升舉銷
130‧‧‧射頻返回帶
132‧‧‧氣源
134‧‧‧氣體出口
136‧‧‧氣體通道
138‧‧‧射頻功率源
140‧‧‧遠端電漿源
190‧‧‧PID控制器
192‧‧‧底表面
194‧‧‧頂表面
200、300、400‧‧‧基板溫度監控系統
202、302、402‧‧‧主體
204‧‧‧窗口
206‧‧‧溫度感測器
208、410‧‧‧纖維管
210‧‧‧密封件
212、304、404‧‧‧內部通道
306‧‧‧透鏡
308‧‧‧孔螺母
309‧‧‧圓錐形孔
310‧‧‧光纖管
312‧‧‧螺孔
314‧‧‧圓錐形端部
316‧‧‧O型環
404‧‧‧內部通道
406‧‧‧頂表面
408‧‧‧溫度感測器
412‧‧‧帽蓋
414‧‧‧開口
A、B、C、D、E、F、G、H、J‧‧‧點(位置)
B-B‧‧‧剖線
為了對本揭露之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式詳細說明如下。應當注意，所附圖式僅繪示本揭露的典型實施例，但並不因此被認為係對其範圍的限制，因為本揭露可以允許其他等效的實施例。
第1圖繪示依照一實施例之具有設置於其中之一基板支撐組件的一處理腔室之剖面圖。
第2圖繪示依照一實施例之第1圖的支撐板之剖面圖，其示出一基板溫度監控系統。
第3A圖繪示依照一實施例之第1圖的支撐板之剖面圖，其示出一基板溫度監控系統。
第3B圖繪示依照一實施例之基板溫度監控系統的光線軌跡圖(ray trace diagram)。
第4A至4B圖繪示依照一實施例之升舉銷(lift pin)形式的一基板溫度監控系統。
為了清楚起見，在適用的情況下，相同的元件符號係表示圖式中所共有的相同元件。此外，在一實施例中揭露的元件可以有利地使用於本揭露所述之其它實施例。
第1圖繪示根據一實施例之具有一基板支撐組件118的一處理腔室100之剖面圖，基板支撐組件118包括至少一溫度監控系統。處理腔室100可包括具有數個側壁104和一底壁106之一腔室主體102，側壁104與底壁106界定一處理容積110。處理容積110係可經由形成通過側壁104之一開口109進入。
噴頭(showerhead)108係亦設置於處理容積110中。噴頭108可以耦接至一背板112。舉例來說，噴頭108可以透過位於背板112之端部的一懸架114耦接至背板112。一個或多個耦接支撐件(coupling support)116可用以將噴頭108耦接至背板112以協助避免下垂(sag)。
基板支撐組件118係亦設置於處理容積110中。基板支撐組件118包括支撐板120與耦接至支撐板120之一桿122。支撐板120係用以在處理期間支撐一基板101。支撐板組件120包括溫度控制元件124。溫度控制元件124係用以將基板支撐組件118維持在一期望的溫度。溫度控制元件124向上延伸通過桿122，且在支撐板120的整個上表面之下延伸並橫跨支撐板120的整個上表面。
如上所述，基板支撐組件118可以包括一個或多個設置於其中的基板溫度監控系統200、300及400。基板溫度監控系統200、300及400係用以在處理期間測量基板101的溫度。基板溫度監控系統200至400可以耦接至一比例-積分-微分控制器(proportional-integral-derivative，PID)190。PI D控制器190係用以連續地讀取基板的溫度並調節供應至溫度控制元件124之冷卻流體的量。以下將結合第2至4B圖以更詳細地說明基板溫度監控系統200至400。
升舉系統(lift system)126可以耦接至桿122以升高和降低支撐板120。升舉銷128係可移動地設置穿過支撐板120以將基板101與支撐板120間隔分離以利於基板101的機器人傳送(robotic transfer)。基板支撐組件118還可包括射頻返回帶(RF return strap)130，以在基板支撐組件118的端部提供一射頻返回路徑(RF return path)。
一氣源(gas source)132可耦接至背板112，以提供處理氣體通過背板112內的一氣體出口(gas outlet)134。處理氣體從氣體出口134流動通過噴頭108內的氣體通道(gas passage)136。一真空泵(vacuum pump)111可耦接至腔室100，以控制處理容積110內的壓力。一射頻功率源(RF power source)138可以耦接至背板112及/或耦接至噴頭108，以提供射頻功率至噴頭108。射頻功率在噴頭108與基板支撐組件118之間產生一電場，使得在噴頭108與基板支撐組件118之間可以從氣體產生一電漿。
遠端電漿源(remote plasma source)140，例如是一感應耦合(inductively coupled)的遠端電漿源，亦可耦接於氣源132與背板112之間。在處理基板之間，清潔氣體(cleaning gas)可被提供至遠端電漿源140，從而產生一遠端電漿並將此遠端電漿提供至處理容積110中，以清潔腔室部件(chamber component)。清潔氣體可在處理容積110中被從射頻功率源138施加至噴頭108之功率進一步激發。合適的清潔氣體包括NF3、F2及SF6，但不限於此。
第2圖繪示根據一實施例之透過第1圖所示的剖線B-B所得到之支撐板120的剖面圖，其示出了基板溫度監控系統200。基板溫度監控系統200包括具有一內部通道212和一窗口204之一主體202。主體202穿過支撐板120的底表面192而嵌入支撐板120中。在第2圖所示之實施例中，主體202係螺合(screwed)至支撐板120中的一六角塞頭(hex-headed plug)。一或多個密封件210可以定位於支撐板120與主體202之間，以將主體202密封至支撐板120。
窗口204可以定位於支撐板120的頂表面194下方，或與支撐板120的頂表面194齊平(flush)。齊平/凹陷(recessed)的窗口204允許基板101平坦地放置在支撐板120上。窗口204可以由一透明材料形成。舉例來說，窗口204可以由藍寶石(sapphire)、釔(yttrium)或其它合適的材料形成。
基板溫度監控系統200更包括一溫度感測器206和一纖維管(fiber tube)208。溫度感測器206和纖維管208係設置於主體202的內部通道212中。溫度感測器206係設置在窗口204下方，使得溫度感測器206可以在處理期間測量基板101的溫度。纖維管208將溫度感測器206耦接至PID控制器190。多個密封件210亦可以定位於纖維管208與主體202之間。
第3A圖繪示根據一實施例之支撐板120的剖面圖，其示出一基板溫度監控系統300。基板溫度監控系統300包括界定一內部通道304之一主體302，一透鏡306、一孔螺母308及一光纖管310。主體302係設置於支撐板120中，且在形成於支撐板120中之一螺孔(tapped hole)312的下方。孔螺母308係用以使透鏡306保持在適當位置。孔螺母308包括與透鏡306對準之一圓錐形孔309。光纖管310係在透鏡306的下方並設置於內部通道304中。舉例來說，光纖管310係使用其上的一SMA 905連接件來螺合至主體302中。 光纖管310係用以接收來自基板101的底表面通過透鏡306之一聚焦的紅外光束(IR beam)。光纖管310係耦接至PID控制器190。PID控制器190基於發射自基板101的底表面之所接收的紅外光束而確定基板101的溫度。
在一實施例中，透鏡306是平凸透鏡，其將發射自基板101之紅外光射線聚焦回至光纖管310。光纖管310具有接受錐角(acceptance cone angle)或數值孔徑(numerical aperture)的要求。舉例來說，1000μm的一光纖具有約30mRad的一輸出發散半角(output divergence half angle)，其對應至1.7度的一半錐角(half cone angle)或3.4度的一全錐角(full cone angle)。若從基板進入光纖管310的光線未填滿(underfill)或填滿(overfill)光纖管310，通過光纖管310的傳輸則會受到損害，而因此偵測器(detector)將讀取到溫度的一錯誤表示(misrepresentation)，即低的訊號雜訊比(signal to noise ratio)。透鏡306透過確保進入光纖管310的紅外光射線落在光纖管310之接受錐角內，以增強紅外線傳輸。此外，形成在支撐板120中的螺孔312具有一圓錐形端部314。圓錐形端部314係用以避免來自基板的紅外光束之限幅(clipping)。若螺孔312係純粹垂直的，則來自基板101之光束將被限幅，從而導致訊號損失。
透鏡306可以由一透明材料形成。舉例來說，在一實施例中，透鏡306可以由氟化鎂(MgF2)，氟化鈣(CaF2)，氟化鋇(BaF2)或結晶氧化釔(crystalline Y2O3)形成。透鏡306的材料提供足夠的化學強度以對抗在CVD製程中使用的強力清潔劑(例如是具有高度腐蝕性的NF3清潔劑)。光纖管310直接接觸NF3將逐漸使光纖管310受蝕刻(etched)，從而隨時間降低訊號傳輸之效果。透鏡306的材料亦會在感興趣的波長(即，5至15μm)中展現增強的傳輸特性。因此，與由一傳輸紅外輻射之無定形材料(AMTIR)製成的傳統透 鏡相比，透鏡306具有較優異的特性。AMTIR的化學穩定性較差(即，在一段時間內會被NF3蝕刻)，且在相同的波長範圍，相對於具有約93%穿透率之製造透鏡306的材料，AMTIR具有較低的總體穿透率(約70%)。
孔螺母308中的孔徑係用以減少入射光線之數值孔徑，並將像側光線(image side ray)之數值孔徑維持在光纖的接受錐角內。O型環316係定位於透鏡306下方，O型環316係用以密封，並從而避免光纖管310受NF3清潔劑侵害。孔螺母308更用以提供壓縮力以將O型環316擠壓至其凹槽中。
孔螺母308由一低輻射率之拋光材料形成。低輻射率材料可改善基板溫度監控系統300。由於當支撐板120在處理期間變熱時，主體302和孔螺母308亦將變熱，熱物體傾向於在某些溫度下發出紅外光輻射。此些紅外光射線將由光纖管310收集，導致一錯誤的讀數。因此，低輻射率材料確保孔螺母308不會輻射大量的熱。
第3B圖繪示第3A圖中的基板溫度監控系統300之光線軌跡圖。點A表示物體的位置，該物體係為基板101的一底表面。點B表示孔螺母308中之孔(aperture)的位置，其用以限定物體的數值孔徑，從而限定成像之數值孔徑。點C表示透鏡306的位置。點D表示成像的位置。光纖管310係位於點D。從透鏡306發射之光束的數值孔徑應與光纖管310的數值孔徑匹配。點E表示光纖管310之與點D相鄰的位置。點F表示透鏡306在物側(object side)之焦點的位置。點G表示透鏡306在像側(image side)之焦點的位置。點H和點J表示透鏡306的主要平面(principal plane)。點B處之孔係位於點F處之物側焦點與點H處之主要平面之間。藉此，孔將在透鏡306後方形成一虛像(virtual image)，從而改善溫度的讀數。
第4A圖和第4B圖繪示根據一實施例之以升舉銷128形式的基板溫度監控系統400。第4A圖繪示升舉銷128的一剖面圖。升舉銷128包括具 有一內部通道404之一主體402。主體402可以包括用於接觸基板之圓形頂表面406。
升舉銷128更包括一溫度感測器408，一纖維管410和一帽蓋412。溫度感測器408可設置於主體402的內部通道404中。帽蓋412可與頂表面406一體地形成。帽蓋412係圍繞溫度感測器408定位，使得帽蓋412使溫度感測器408免於接觸基板101或主體402。在一實施例中，如第4A至4B圖所示，帽蓋412可以沿溫度感測器408的整個長度延伸。帽蓋412可以由一導電材料形成，例如鋁。纖維管410係設置於內部通道404中。纖維管410係用以將溫度感測器408與控制器190耦接。
在操作中，升舉銷128係用以透過將基板101與升舉銷128的頂表面406接觸，以使基板101上升離開支撐板120的頂表面194。由於升舉銷128的頂表面406係圓形的，帽蓋412係為與基板101的底表面接觸之頂表面406的一部分。溫度感測器408係用以在升舉銷128與基板101接觸時，測量基板101的溫度。
在另一實施例中，主體402可以包括形成在主體402的一側之一開口414。開口414允許纖維管410穿過該側而離開升舉銷128，並將溫度感測器408耦接至PID控制器190。此可確保當基板支撐組件118下降且升舉銷128透過在其底部與另一物體之接觸而移位時(例如，當基板支撐組件118下降至一傳送位置且與腔室100的底壁106接觸時)，纖維管410不會受損。
基板溫度監控系統400提供測量及控制基板101的溫度之一接觸方法。
綜上所述，雖然本發明已以實施例揭露如上，然其並非用以確定本發明。本發明所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準

Claims (10)

  1. 一種基板支撐組件，包括：一支撐板，具有用以支撐一基板之一頂表面；以及一基板溫度監控系統，設置於該基板支撐板中，該基板溫度監控系統用以從該基板的一底表面測量該基板的一溫度，該基板溫度監控系統，包括：一主體，界定一內部腔；一孔螺母，設置於該主體中；一透鏡，設置於該主體中且由該孔螺母支撐，其中該孔螺母包括形成於該孔螺母的頂部中的一圓錐形孔，且該圓錐形孔覆蓋該透鏡並與該透鏡對準；一光纖管，設置於該內部腔中且與該透鏡間隔分離，該光纖管用以接收從該基板的該底表面通過該透鏡之一紅外光射線；及一控制器，與該光纖管相連接，該控制器用以基於所接收的該紅外光射線而確定該基板的該溫度。
  2. 如申請專利範圍第1項所述之基板支撐組件，其中該透鏡係一平凸透鏡。
  3. 如申請專利範圍第1項所述之基板支撐組件，其中該透鏡係由氟化鈣(CaF2)、氟化鎂(MgF2)、氟化鋇(BaF2)及氧化釔(Y2O3)中的一者形成。
  4. 如申請專利範圍第1項所述之基板支撐組件，其中該支撐板更包括一螺孔，且其中該基板溫度監控系統係設置於該螺孔的下方，使得該透鏡與該螺孔對準。
  5. 如申請專利範圍第1項所述之基板支撐組件，其中該孔螺母係由一低輻射材料形成。
  6. 如申請專利範圍第1項所述之基板支撐組件，其中該光纖管具有30mRad的一輸出發散半角。
  7. 如申請專利範圍第1項所述之基板支撐組件，其中該光纖管係設置於該主體中之由該透鏡投射之一成像的一位置。
  8. 如申請專利範圍第1項所述之基板支撐組件，其中該孔螺母係定位於與該透鏡相距一距離之位置，該距離小於該透鏡之焦距。
  9. 如申請專利範圍第1項所述之基板支撐組件，更包括：複數個O型環，定位於該透鏡的下方，該些O型環用以密封，且避免該光纖管受一清潔劑侵害。
  10. 一種處理腔室，包括：一腔室主體，包括界定該腔室主體內的一處理區域之一頂壁、一側壁和一底壁；以及一基板支撐組件，設置於該處理區域中，該基板支撐組件包括：一支撐板，具有用以支撐一基板的一頂表面；及一基板溫度監控系統，設置於該基板支撐板中，且係用以從該基板的一底表面測量該基板的一溫度，該基板溫度監控系統，包括：一主體，界定一內部腔；一孔螺母，設置於該主體中；一透鏡，設置於該主體中且由該孔螺母支撐，其中該孔螺母包括形成於該孔螺母的頂部中的一圓錐形孔，且該圓錐形孔覆蓋該透鏡並與該透鏡對準；一光纖管，設置於該內部腔中且與該透鏡間隔分離，該光纖管用以接收從該基板的該底表面通過該透鏡之一紅外光射線；及一控制器，與該光纖管相連接，該控制器用以基於所接收的該紅外光射線而確定該基板的該溫度。
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