CN109155268A - 基板温度监控 - Google Patents

基板温度监控 Download PDF

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CN109155268A
CN109155268A CN201780032266.6A CN201780032266A CN109155268A CN 109155268 A CN109155268 A CN 109155268A CN 201780032266 A CN201780032266 A CN 201780032266A CN 109155268 A CN109155268 A CN 109155268A
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substrate
monitoring system
support
temperature
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桑杰伊·D·雅达夫
什瑞沙·Y·饶
元泰景
乌梅沙·阿切利
希曼殊·乔希
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Applied Materials Inc
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Applied Materials Inc
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Abstract

本文公开的实施方式大体涉及一种基板支撑组件中的基板温度监控系统。在一个实施方式中，所述基板支撑组件包括支撑板和基板温度监控系统。所述支撑板具有被配置为支撑基板的顶表面。所述基板温度监控系统设置在所述基板支撑板中。所述基板温度监控系统被配置为从所述基板的底表面测量所述基板的温度。所述基板温度监控系统包括窗口、主体和温度传感器。所述窗口一体地形成在所述支撑板的顶表面中。所述主体穿过所述底表面嵌入所述支撑板中。所述主体限定内部通道。所述温度传感器设置在所述窗口下方的所述内部通道中。所述温度传感器被配置为测量所述基板的温度。

Description

基板温度监控
技术领域
本文所述的实施方式大体涉及一种基板温度监控系统。
背景技术
平板显示器(FPD)通常用于有源矩阵显示器，诸如计算机和电视监控器、个人数字助理(PDA)和手机，以及太阳能电池和类似者。等离子体增强化学气相沉积(PECVD)可以用于平板显示器制造以在基板上沉积薄膜。PECVD一般通过将前驱物气体激发成真空处理腔室内的等离子体并从激发的前驱物气体在基板上沉积膜来实现。
在沉积期间，真空处理腔室内的等离子体加热基板和基板支撑组件。等离子体可能导致基板支撑组件的温度具有瞬时温度增加或尖峰(例如，从150℃的约30℃-50℃增加、或20％-30％温度增加)。基板支撑组件的这种大程度的温度增加不期望地导致工艺变化。
因此，需要一种用于基板支撑组件的改善的基板温度监控系统。
发明内容
本文公开的实施方式大体涉及一种基板支撑组件中的基板温度监控系统。在一个实施方式中，本文公开所述基板支撑组件。所述基板支撑组件包括支撑板和基板温度监控系统。所述支撑板具有被配置为支撑基板的顶表面。所述基板温度监控系统设置在所述基板支撑板中。所述基板温度监控系统被配置为从所述基板的底表面测量所述基板的温度。所述基板温度监控系统包括窗口、主体和温度传感器。所述窗口一体地形成在所述支撑板的顶表面中。所述主体穿过所述底表面嵌入所述支撑板中。所述主体限定内部通道。所述温度传感器设置在所述窗口下方的所述内部通道中。所述温度传感器被配置为测量所述基板的温度。
在另一个实施方式中，本文公开一种基板支撑组件。所述基板支撑组件包括支撑板和基板温度监控系统。所述支撑板具有被配置为支撑基板的顶表面。所述基板温度监控系统设置在所述支撑板中。所述基板温度监控系统被配置为从所述基板的底表面测量所述基板的温度。所述基板温度监控系统包括主体、孔径螺母(aperture nut)、透镜、光纤管和控制器。所述主体限定内部空腔(inner cavity)。所述孔径螺母设置在所述主体中。所述透镜设置在所述主体中并由所述孔径螺母支撑。所述光纤管设置在所述内部空腔中，与所述透镜间隔开。所述光纤管被配置为通过所述透镜从所述基板的底部接收红外线。所述控制器与所述光纤管通信。所述控制器被配置为基于接收到的红外线而确定所述基板的温度。
在另一个实施方式中，本文公开一种处理腔室。所述处理腔室包括腔室主体和基板支撑组件。所述腔室主体包括顶壁、侧壁和底壁，所述顶壁、所述侧壁和所述底壁限定所述腔室主体中的处理区域。所述基板支撑组件设置在所述处理区域中。所述基板支撑组件包括支撑板和基板温度监控系统。所述支撑板具有被配置为支撑基板的顶表面。所述基板温度监控系统设置在所述支撑板中，并且被配置为从所述基板的底表面测量所述基板的温度。
附图说明
可通过参照实施方式(其中一些实施方式示出于附图中)来详细地理解本公开内容的上述特征以及上文简要概述的本公开内容的更具体的描述。然而，将注意，附图仅示出了本公开内容的典型实施方式，并且因此不应视为限制本公开内容的范围，因为本公开内容可允许其它等效的实施方式。
图1示出了根据一个实施方式的处理腔室的截面图，处理腔室中设置有基板支撑组件。
图2示出了根据一个实施方式的图1的支撑板的截面图，显示出了基板温度监控系统。
图3A示出了根据另一实施方式的图1的支撑板的截面图，显示出了基板温度监控系统。
图3B示出了根据一个实施方式的基板温度监控系统的光线追迹(ray trace)图350。
图4A-4B示出了根据一个实施方式的呈升降销形式的基板温度监控系统。
为了清楚起见，已尽可能使用相同的参考数字指定各图共有的相同要素。
另外，一个实施方式中的要素可有利地适于用于本文所述的其它实施方式。
具体实施方式
图1示出了根据一个实施方式的处理腔室100的截面图，处理腔室100具有包括至少一个温度监控系统的基板支撑组件118。处理腔室100可包括腔室主体102，腔室主体102具有侧壁104和底部106，它们限定处理容积110。处理容积110通过穿过侧壁104形成的开口109进入。
喷头108设置在处理容积110中。喷头108可耦接到背板112。例如，喷头108可通过背板112的端部处的悬架114耦接到背板112。一个或多个耦接支撑件116可用于将喷头108耦接到背板112以帮助防止下垂。
基板支撑组件118也设置在处理容积110中。基板支撑组件118包括支撑板120和耦接到支撑板120的杆(stem)122。支撑板120被配置为在处理期间支撑基板101。支撑板120包括温度控制元件124。温度控制元件124被配置为将基板支撑组件118保持在期望温度。温度控制元件124向上延伸穿过杆122并在支撑板120的整个上表面的下方且跨越整个上表面延伸。
如上所述，基板支撑组件118可包括设置在其中的一个或多个基板温度监控系统200、300和400。基板温度监控系统200、300和400被配置为在处理期间测量基板101的温度。基板温度监控系统200-400可耦接到比例-积分-微分(PID)控制器190。PID控制器190被配置为连续地读出基板的温度并调整供应到温度控制元件124的冷却流体的量。以下结合图2-4B更详细地讨论基板温度监控系统200-400。
升降系统126可耦接到杆122以升高和降低支撑板120。升降销128可移动地穿过支撑板120设置，以使基板101与支撑板120间隔开，从而促进基板101的机械手式传送(robotic transfer)。基板支撑组件118还可以包括RF返回条带130，以在基板支撑组件118的端部处提供RF返回路径。
气源132可耦接到背板112以通过背板112中的气体出口134提供处理气体。处理气体从气体出口134流经喷头108中的气体通道136。真空泵111可耦接到腔室100以控制处理容积110内的压力。RF功率源138可耦接到背板112和/或喷头108以向喷头108提供RF功率。RF功率在喷头108与基板支撑组件118之间形成电场，使得可以从喷头108与基板支撑组件118之间的气体产生等离子体。
远程等离子体源140(诸如感应耦合远程等离子体源)也可以耦接在气源132与背板112之间。在处理基板的过程中，清洁气体可以被提供到远程等离子体源140，使得产生远程等离子体并将远程等离子体提供到处理容积110中以清洁腔室部件。在清洁气体处于处理容积110中时，可通过从RF功率源138施加到喷头108的功率进一步激发清洁气体。合适的清洁气体包括但不限于NF3、F2和SF6。
图2示出了根据一个实施方式的沿着图1中所示的剖面线B-B截取的支撑板120的截面图，显示出了基板温度监控系统200。基板温度监控系统200包括具有内部通道212和窗口204的主体202。主体202穿过支撑板120的底表面192嵌入支撑板120中。在图2中所示的实施方式中，主体202是六角形插塞(hex-headed plug)，其拧入支撑板120中。一个或多个密封件210可定位在支撑板120与主体202之间，以将主体202密封到支撑板120。
窗口204可定位在支撑板120的顶表面194的下方或与之齐平。齐平/凹入窗口204允许基板101平放在支撑板120上。窗口204可由透明材料形成。例如，窗口204可由蓝宝石、钇或其它合适的材料形成。
基板温度监控系统200还包括温度传感器206和光纤管208。温度传感器206和光纤管208设置在主体202的内部通道212中。温度传感器206设置在窗口204的下方，使得温度传感器206可以在处理期间测量基板101的温度。光纤管208将温度传感器206耦接到PID控制器190。多个密封件210也可以定位在光纤管208与主体202之间。
图3A示出了根据一个实施方式的支撑板120的截面图，显示出了基板温度监控系统300。基板温度监控系统300包括限定内部通道304的主体302、透镜306、孔径螺母308和光纤管310。主体302设置在支撑板120中，位于形成在支撑板120中的螺纹孔(tapped hole)312下方。孔径螺母308设置在主体302中。孔径螺母308被配置为将透镜306保持在适当的位置。孔径螺母308包括与透镜306对准的锥形孔隙(conical aperture)309。光纤管310设置在内部通道304中，位于透镜306下方。例如，光纤管310使用光纤管310上的SMA 905连接来拧入主体302中。光纤管310被配置为通过透镜306接收来自基板101的底部的聚焦IR束。光纤管310耦接到PID控制器190，PID控制器190基于接收到的从基板101的底部发射的IR光线而确定基板101的温度。
在一个实施方式中，透镜306是平凸透镜，其将从基板101发射的IR光线聚焦回光纤管310。光纤管310具有接受锥角(或数值孔径)要求。例如，1000μm光纤具有约30mRad的输出发散半角(output divergence half angle)，其对应于1.7度的半锥角或3.4度的全锥角。如果从基板进入光纤管310的光线不足填充或过度填充光纤管310，那么通过光纤管310的透射受到影响，并且因此检测器将读出温度的误表示(misrepresentation)(即，低信噪比)。透镜306通过确保进入光纤管310的IR光线在光纤管310的接受锥角内而增强IR透射。另外，形成在支撑板120中的螺纹孔312具有锥形端部314。锥形端部314被配置为防止来自基板的IR束削波(clipping)。如果孔312是完全地竖直的，那么来自基板101的光束将被削波，并且因此导致信号损失。
透镜306可由透明材料形成。例如，在一个实施方式中，透镜306可由MgF2(氟化镁)、CaF2(氟化钙)、BaF2(氟化钡)或Yr2O3(结晶氧化钇)形成。透镜306的材料提供足够的化学稳健性以防止受到在CVD工艺中使用的刺激性清洁剂(例如，具有高腐蚀性的NF3清洁剂)的影响。将光纤管310直接地暴露于NF3将逐渐地导致光纤管310被蚀刻掉，由此随着时间推移降低信号传输的有效性。透镜306的材料在所关注的波长(即，5-15μm)中也表现出增强的透射性质。因此，与由透射红外辐射的非晶材料(AMTIR)制成的传统透镜相比，透镜306具有优越性能。AMTIR的化学稳定性较低(即，在经过一段时间后将被NF3蚀刻)，而且与制造透镜306的材料不同，具有较低的总透射率(约70％)，在相同的波长范围内，制造透镜306的材料具有约93％的透射率。
孔径螺母308中的孔隙被配置为减小入射光线的数值孔径并将图像侧光线的数值孔径保持在光纤的验收规范(acceptance code)内。O形环316定位在透镜306的下方，被配置为密封光纤管310并因此防止光纤管310受NF3清洁剂的侵蚀。孔径螺母308还被配置为提供压缩力以将O形环316挤压到它们的凹槽中。
孔径螺母308由低发射率抛光材料形成。低发射率材料增强基板温度监控系统300，因为在支撑板120于工艺期间变热时，主体302和孔径螺母308也将变热。热的物体在某些温度下倾向于发射IR辐射。这些IR光线将被光纤管310收集，从而导致错误的温度读数。因此，低发射率材料确保孔径螺母308不会辐射大量的热。
图3B示出了图3A中的基板温度监控系统300的光线追迹350。点A示出了物体的位置，该物体是基板101的底表面。点B示出了孔径螺母308中的孔隙的位置，该孔隙用于限制物体的数值孔径，并因此限制图像的数值孔径。点C示出了透镜306的位置。点D示出了图像的位置。光纤管310定位在D点处。从透镜306射出的光束的数值孔径应与光纤管310的数值孔径匹配。点E表示光纤管310的位置，与D点相邻。点F示出了透镜306的焦点在物体侧上的位置。点G示出了透镜306的焦点在图像侧上的位置。点H和J示出了透镜306的主平面。在点B处的孔隙位于在点F处的物体侧焦点和在点H处的第一主平面之间。如此一来，孔隙将在透镜306后方形成虚像，由此提高温度读数。
图4A和图4B示出了根据一个实施方式的呈升降销128形式的基板温度监控系统400。图4A示出了升降销128的截面图。升降销128包括具有内部通道404的主体402。主体402可包括圆形的顶表面406，以用于在使用时接触基板。
升降销128进一步包括温度传感器408、光纤管410和帽盖412。温度传感器408可设置在主体402的内部通道404中。帽盖412可以与顶表面406一体地形成。帽盖412围绕温度传感器408定位，使得帽盖412保护温度传感器408免于接触基板101或主体402。在一个实施方式中，诸如图4A-4B中所示的实施方式，帽盖412可以向下延伸温度传感器408的整个长度L。帽盖412可由导电材料(诸如铝)形成。光纤管410设置在内部通道404中。光纤管410被配置为将温度传感器408与控制器190耦接。
在操作中，升降销128被配置为通过使基板101与升降销128的顶表面406接触而将基板101从支撑板120的顶表面194上抬离。由于升降销128的顶表面406是圆形的，帽盖412是顶表面406的与基板101的底表面接触的部分。温度传感器408被配置为在升降销128与基板101接触时测量基板101的温度。
在另一个实施方式中，主体402可包括形成在主体402的侧面中的开口414。开口414允许光纤管410通过侧面离开升降销128并将温度传感器408耦接到PID控制器190。这确保了在基板支撑组件118下降并且升降销128通过与升降销128的底部处的另一个物体(例如，在基板支撑组件118下降到传送位置时与腔室100的底表面106)接触而移位时，光纤管410不会损坏。
基板温度监控系统400提供测量和控制基板101的温度的接触方法。
尽管前述内容针对的是具体实施方式，但是也可在不背离本发明的基本范围的情况下设计出其他和进一步的实施方式，并且本发明的范围是由随附的权利要求书确定的。

Claims (15)

1.一种基板支撑组件，包括：
支撑板，所述支撑板具有被配置为支撑基板的顶表面；和
基板温度监控系统，所述基板温度监控系统设置在所述基板支撑板中，所述基板温度监控系统被配置为从所述基板的底表面测量所述基板的温度，所述基板温度监控系统包括：
窗口，所述窗口一体地形成在所述支撑板的顶表面中；
主体，所述主体穿过所述底表面嵌入所述支撑板中，所述主体具有内部通道；和
温度传感器，所述温度传感器设置在所述窗口下方的所述内部通道中，所述温度传感器被配置为测量所述基板的温度。
2.如权利要求1所述的基板支撑组件，进一步包括光纤管，所述光纤管设置在所述内部通道中，所述光纤管耦接到所述温度传感器。
3.如权利要求2所述的基板支撑组件，其中所述光纤管将所述温度传感器与PID控制器耦接。
4.一种基板支撑组件，包括：
支撑板，所述支撑板具有被配置为支撑基板的顶表面；和
基板温度监控系统，所述基板温度监控系统设置在所述支撑板中，所述基板温度监控系统被配置为从所述基板的底表面测量所述基板的温度，所述基板温度监控系统包括：
主体，所述主体限定内部空腔；
孔径螺母，所述孔径螺母设置在所述主体中；
透镜，所述透镜设置在所述主体中并由所述孔径螺母支撑；
光纤管，所述光纤管设置在所述内部空腔中，与所述透镜间隔开，所述光纤管被配置为通过所述透镜从所述基板的所述底表面接收红外线；和
控制器，所述控制器与所述光纤管通信，所述控制器被配置为基于接收到的红外线而确定所述基板的温度。
5.如权利要求4所述的基板支撑组件，其中所述透镜是平凸透镜。
6.如权利要求4所述的基板支撑组件，其中所述孔径螺母包括与所述透镜对准的锥形孔隙。
7.如权利要求4所述的基板支撑组件，其中所述支撑板进一步包括螺纹孔，并且其中所述基板温度监控系统设置在所述螺纹孔的下方，使得所述透镜与所述螺纹孔对准。
8.如权利要求4所述的基板支撑组件，其中所述孔径螺母由低发射率材料形成。
9.如权利要求4所述的基板支撑组件，其中所述光纤管设置在所述主体中由所述透镜投影图像的位置处。
10.如权利要求4所述的基板支撑组件，其中所述孔径螺母定位在距所述透镜一定距离处，所述距离小于所述透镜的焦距的距离。
11.如权利要求4所述的基板支撑组件，进一步包括：
多个O形环，所述多个O形环定位在所述透镜的下方，所述多个O形环被配置为密封所述光纤管并防止所述光纤管受清洁剂的侵蚀。
12.一种处理腔室，包括：
腔室主体，所述腔室主体包括顶壁、侧壁和底壁，所述顶壁、所述侧壁和所述底壁限定所述腔室主体中的处理区域；和
基板支撑组件，所述基板支撑组件设置在所述处理区域中，所述基板支撑组件包括：
支撑板，所述支撑板具有被配置为支撑基板的顶表面；和
基板温度监控系统，所述基板温度监控系统设置在所述支撑板中，并且被配置为从所述基板的底表面测量所述基板的温度。
13.如权利要求12所述的处理腔室，其中所述基板温度监控系统包括：
窗口，所述窗口一体地形成在所述支撑板的顶表面中；
主体，所述主体穿过所述底表面嵌入所述支撑板中，所述主体限定内部通道；和
温度传感器，所述温度传感器设置在所述窗口下方的所述内部通道中，所述温度传感器被配置为测量所述基板的温度。
14.如权利要求13所述的处理腔室，其中所述基板温度监控系统进一步包括：
透镜，所述透镜定位在所述窗口与所述温度传感器之间。
15.如权利要求12所述的处理腔室，其中所述基板温度监控系统呈升降销形式，所述基板温度监控系统包括：
主体，所述主体限定内部通道，所述主体具有圆形的顶表面；
温度传感器，所述温度传感器设置在所述内部通道中，所述温度传感器被配置为测量所述基板的温度；和
帽盖，所述帽盖与所述圆形的顶表面一体地形成，所述帽盖围绕所述温度传感器定位，所述帽盖被配置为保护所述温度传感器免于接触所述主体。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111599728A (zh) * 2020-06-01 2020-08-28 厦门通富微电子有限公司 一种晶圆载台及半导体制造设备
CN114846594A (zh) * 2019-12-10 2022-08-02 应用材料公司 用于测量真空和微波环境中温度的设备

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10900907B2 (en) * 2017-02-17 2021-01-26 Radom Corporation Portable plasma source for optical spectroscopy
US11131504B2 (en) * 2017-03-08 2021-09-28 Boe Technology Group Co., Ltd. Temperature monitoring system and method for a substrate heating furnace
JP6808596B2 (ja) * 2017-03-10 2021-01-06 キオクシア株式会社 センシングシステム
CN206573826U (zh) * 2017-03-23 2017-10-20 惠科股份有限公司 一种顶升装置及配向紫外线照射机
KR20190138315A (ko) * 2017-05-03 2019-12-12 어플라이드 머티어리얼스, 인코포레이티드 고온 세라믹 가열기 상의 통합형 기판 온도 측정
US12051607B2 (en) 2018-07-24 2024-07-30 Asml Netherlands B.V. Substrate positioning device with remote temperature sensor
DE102018009630A1 (de) * 2018-12-11 2020-06-18 Vat Holding Ag Stifthubvorrichtung mit Temperatursensor
WO2021202171A1 (en) * 2020-04-01 2021-10-07 Lam Research Corporation Rapid and precise temperature control for thermal etching
KR20230132361A (ko) 2021-01-25 2023-09-15 램 리써치 코포레이션 열적 에칭에 의한 선택적인 실리콘 트리밍
JP7675584B2 (ja) * 2021-07-15 2025-05-13 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102593139B1 (ko) * 2021-07-28 2023-10-25 세메스 주식회사 지지 유닛, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
KR102860016B1 (ko) 2021-12-21 2025-09-12 삼성전자주식회사 전계 측정 장치 및 이를 이용한 전계 측정 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6086246A (en) * 1998-05-26 2000-07-11 Novellus Systems, Inc. Two-element plasma resistant lightpipe assembly
JP2004228471A (ja) * 2003-01-27 2004-08-12 Ngk Insulators Ltd 半導体ウェハ保持装置
CN101202211A (zh) * 2006-12-12 2008-06-18 东京毅力科创株式会社 基板处理装置、基板搬送方法和计算机程序
CN101283624A (zh) * 2005-10-06 2008-10-08 朗姆研究公司 具有径向温度控制能力的静电卡盘
CN105556656A (zh) * 2013-09-16 2016-05-04 应用材料公司 具有温度分布控制的加热式基板支撑件

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215275A (en) * 1977-12-07 1980-07-29 Luxtron Corporation Optical temperature measurement technique utilizing phosphors
US4737038A (en) * 1987-01-15 1988-04-12 Vanzetti Systems Immersion infrared thermometer for molten materials
US5556204A (en) * 1990-07-02 1996-09-17 Hitachi, Ltd. Method and apparatus for detecting the temperature of a sample
US5277496A (en) * 1990-10-17 1994-01-11 Ametek, Inc. High temperature optical probe
US5549756A (en) 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5716133A (en) 1995-01-17 1998-02-10 Applied Komatsu Technology, Inc. Shielded heat sensor for measuring temperature
US6226453B1 (en) * 1997-09-16 2001-05-01 Applied Materials, Inc. Temperature probe with fiber optic core
JPH11258054A (ja) 1998-03-12 1999-09-24 Omron Corp ウエハ温度測定方法とその装置
JP3774094B2 (ja) 1999-12-02 2006-05-10 株式会社日立製作所 膜厚、加工深さ測定装置及び成膜加工方法
US6481886B1 (en) * 2000-02-24 2002-11-19 Applied Materials Inc. Apparatus for measuring pedestal and substrate temperature in a semiconductor wafer processing system
DE10045264A1 (de) * 2000-09-13 2002-03-21 Zeiss Carl Verfahren zum Aufheizen eines Werkstückes, insbesondere eines optischen Elementes
US7080940B2 (en) * 2001-04-20 2006-07-25 Luxtron Corporation In situ optical surface temperature measuring techniques and devices
US20030112848A1 (en) 2001-08-29 2003-06-19 Khan Abid L. Temperature sensing in controlled environment
JP5003102B2 (ja) * 2006-10-27 2012-08-15 東京エレクトロン株式会社 静電チャックの診断方法、真空処理装置及び記憶媒体
JP5441332B2 (ja) * 2006-10-30 2014-03-12 アプライド マテリアルズ インコーポレイテッド フォトマスクエッチングのための終点検出
US8147137B2 (en) * 2008-11-19 2012-04-03 Applied Materials, Inc. Pyrometry for substrate processing
US8298372B2 (en) * 2009-04-20 2012-10-30 Applied Materials, Inc. Quartz window having gas feed and processing equipment incorporating same
US20120196242A1 (en) * 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
US9339890B2 (en) * 2011-12-13 2016-05-17 Hypertherm, Inc. Optimization and control of beam quality for material processing
US9948214B2 (en) * 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
KR102102003B1 (ko) 2012-05-25 2020-04-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 및 플라즈마 처리 방법
KR102261013B1 (ko) * 2013-03-14 2021-06-03 어플라이드 머티어리얼스, 인코포레이티드 다중-구역 히터에서의 온도 측정
TWI624903B (zh) * 2013-03-15 2018-05-21 應用材料股份有限公司 在雜訊環境中之現場溫度測量
JP2016076529A (ja) 2014-10-03 2016-05-12 東京エレクトロン株式会社 温度測定用支持部材及び熱処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6086246A (en) * 1998-05-26 2000-07-11 Novellus Systems, Inc. Two-element plasma resistant lightpipe assembly
JP2004228471A (ja) * 2003-01-27 2004-08-12 Ngk Insulators Ltd 半導体ウェハ保持装置
CN101283624A (zh) * 2005-10-06 2008-10-08 朗姆研究公司 具有径向温度控制能力的静电卡盘
CN101202211A (zh) * 2006-12-12 2008-06-18 东京毅力科创株式会社 基板处理装置、基板搬送方法和计算机程序
CN105556656A (zh) * 2013-09-16 2016-05-04 应用材料公司 具有温度分布控制的加热式基板支撑件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114846594A (zh) * 2019-12-10 2022-08-02 应用材料公司 用于测量真空和微波环境中温度的设备
CN111599728A (zh) * 2020-06-01 2020-08-28 厦门通富微电子有限公司 一种晶圆载台及半导体制造设备

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