TWI718458B - 處理液吐出配管以及基板處理裝置 - Google Patents

處理液吐出配管以及基板處理裝置 Download PDF

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Publication number
TWI718458B
TWI718458B TW107147050A TW107147050A TWI718458B TW I718458 B TWI718458 B TW I718458B TW 107147050 A TW107147050 A TW 107147050A TW 107147050 A TW107147050 A TW 107147050A TW I718458 B TWI718458 B TW I718458B
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TW
Taiwan
Prior art keywords
flow path
processing liquid
substrate
processing
hydrophilic
Prior art date
Application number
TW107147050A
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English (en)
Chinese (zh)
Other versions
TW201933436A (zh
Inventor
竹松佑介
温井宏樹
岩川裕
東克栄
菅原雄二
Original Assignee
日商斯庫林集團股份有限公司
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Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW201933436A publication Critical patent/TW201933436A/zh
Application granted granted Critical
Publication of TWI718458B publication Critical patent/TWI718458B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW107147050A 2018-01-30 2018-12-26 處理液吐出配管以及基板處理裝置 TWI718458B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018013772A JP7000177B2 (ja) 2018-01-30 2018-01-30 処理液吐出配管および基板処理装置
JP2018-013772 2018-01-30

Publications (2)

Publication Number Publication Date
TW201933436A TW201933436A (zh) 2019-08-16
TWI718458B true TWI718458B (zh) 2021-02-11

Family

ID=67479621

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107147050A TWI718458B (zh) 2018-01-30 2018-12-26 處理液吐出配管以及基板處理裝置

Country Status (5)

Country Link
JP (1) JP7000177B2 (ko)
KR (1) KR102377383B1 (ko)
CN (1) CN111630634B (ko)
TW (1) TWI718458B (ko)
WO (1) WO2019150716A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200499475Y1 (ko) * 2021-03-05 2025-08-13 주식회사 디엠에스 처리액 공급장치 및 이를 포함하는 기판 처리장치
KR102666437B1 (ko) * 2021-09-08 2024-05-20 세메스 주식회사 액 공급 장치 및 기판 처리 장치
JP7609818B2 (ja) * 2022-03-24 2025-01-07 芝浦メカトロニクス株式会社 基板処理装置、基板処理方法
JP2024117576A (ja) * 2023-02-17 2024-08-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW548143B (en) * 2001-06-29 2003-08-21 Dainippon Screen Mfg Substrate application apparatus, liquid supply apparatus and method of manufacturing nozzle
TW201419397A (zh) * 2012-09-27 2014-05-16 大日本網屏製造股份有限公司 處理液供給裝置，基板處理裝置，處理液供給方法，基板處理方法，處理液處理裝置及處理液處理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256116A (ja) 1997-03-10 1998-09-25 Dainippon Screen Mfg Co Ltd 基板処理装置の処理液供給ノズル
JP4198219B2 (ja) * 1997-11-12 2008-12-17 大日本スクリーン製造株式会社 現像装置
JP4444474B2 (ja) * 2000-08-30 2010-03-31 株式会社日立製作所 板状基板の処理装置及び処理方法
JP4780789B2 (ja) 2007-02-19 2011-09-28 東京エレクトロン株式会社 処理液供給装置
JP2008277748A (ja) * 2007-03-30 2008-11-13 Renesas Technology Corp レジストパターンの形成方法とその方法により製造した半導体デバイス
JP5276559B2 (ja) * 2009-09-24 2013-08-28 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP6319941B2 (ja) * 2013-03-15 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および吐出ヘッド待機方法
JP6216200B2 (ja) 2013-09-30 2017-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6385864B2 (ja) 2015-03-18 2018-09-05 株式会社東芝 ノズルおよび液体供給装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW548143B (en) * 2001-06-29 2003-08-21 Dainippon Screen Mfg Substrate application apparatus, liquid supply apparatus and method of manufacturing nozzle
TW201419397A (zh) * 2012-09-27 2014-05-16 大日本網屏製造股份有限公司 處理液供給裝置，基板處理裝置，處理液供給方法，基板處理方法，處理液處理裝置及處理液處理方法

Also Published As

Publication number Publication date
KR102377383B1 (ko) 2022-03-21
JP7000177B2 (ja) 2022-01-19
CN111630634B (zh) 2024-08-20
TW201933436A (zh) 2019-08-16
KR20200096643A (ko) 2020-08-12
JP2019134023A (ja) 2019-08-08
CN111630634A (zh) 2020-09-04
WO2019150716A1 (ja) 2019-08-08

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