TWI829797B - 具多層反射膜基板、反射型遮罩基底、反射型遮罩之製造方法以及半導體裝置之製造方法 - Google Patents

具多層反射膜基板、反射型遮罩基底、反射型遮罩之製造方法以及半導體裝置之製造方法 Download PDF

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Publication number
TWI829797B
TWI829797B TW108140273A TW108140273A TWI829797B TW I829797 B TWI829797 B TW I829797B TW 108140273 A TW108140273 A TW 108140273A TW 108140273 A TW108140273 A TW 108140273A TW I829797 B TWI829797 B TW I829797B
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TW
Taiwan
Prior art keywords
substrate
film
defect
coordinate
reflective film
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TW108140273A
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English (en)
Chinese (zh)
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TW202036668A (zh
Inventor
浜本和宏
鈴木宏太
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW108140273A 2018-11-07 2019-11-06 具多層反射膜基板、反射型遮罩基底、反射型遮罩之製造方法以及半導體裝置之製造方法 TWI829797B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-209973 2018-11-07
JP2018209973 2018-11-07

Publications (2)

Publication Number Publication Date
TW202036668A TW202036668A (zh) 2020-10-01
TWI829797B true TWI829797B (zh) 2024-01-21

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TW108140273A TWI829797B (zh) 2018-11-07 2019-11-06 具多層反射膜基板、反射型遮罩基底、反射型遮罩之製造方法以及半導體裝置之製造方法

Country Status (3)

Country Link
JP (1) JP7492456B2 (fr)
TW (1) TWI829797B (fr)
WO (1) WO2020095959A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022151654A (ja) * 2021-03-24 2022-10-07 Hoya株式会社 多層反射膜付き基板の製造方法、反射型マスクブランク及びその製造方法、並びに反射型マスクの製造方法
US20220308438A1 (en) * 2021-03-24 2022-09-29 Hoya Corporation Method for manufacturing multilayered-reflective-film-provided substrate, reflective mask blank and method for manufacturing the same, and method for manufacturing reflective mask
JP7589633B2 (ja) * 2021-04-19 2024-11-26 Ａｇｃ株式会社 多層反射膜付き基板の検査方法、及び反射型マスクブランクの製造方法
CN113674250B (zh) * 2021-08-25 2023-10-20 长鑫存储技术有限公司 光罩缺陷检测方法、装置、电子设备、存储介质及芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110117479A1 (en) * 2009-11-19 2011-05-19 Renesas Electronics Corporation Reflective exposure mask, method of manufacturing reflective exposure mask, and method of manufacturing semiconductor device
TW201307991A (zh) * 2007-02-23 2013-02-16 紐富來科技股份有限公司 半導體裝置之製造方法及對曝光用遮罩形成圖案之方法
JP2015090421A (ja) * 2013-11-06 2015-05-11 Hoya株式会社 薄膜付き基板及び転写用マスクの製造方法
US20150198896A1 (en) * 2014-01-16 2015-07-16 Nuflare Technology, Inc. Exposure mask fabrication method, exposure mask fabrication system, and semiconductor device fabrication method
TW201826009A (zh) * 2013-09-27 2018-07-16 日商Ｈｏｙａ股份有限公司 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003248299A (ja) 2002-02-26 2003-09-05 Toshiba Corp マスク基板およびその製造方法
WO2008129914A1 (fr) * 2007-04-17 2008-10-30 Asahi Glass Company, Limited Pièce à masque euv
JP5126917B1 (ja) * 2012-03-14 2013-01-23 レーザーテック株式会社 欠陥座標測定装置、欠陥座標測定方法、マスクの製造方法、及び基準マスク

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201307991A (zh) * 2007-02-23 2013-02-16 紐富來科技股份有限公司 半導體裝置之製造方法及對曝光用遮罩形成圖案之方法
US20110117479A1 (en) * 2009-11-19 2011-05-19 Renesas Electronics Corporation Reflective exposure mask, method of manufacturing reflective exposure mask, and method of manufacturing semiconductor device
TW201826009A (zh) * 2013-09-27 2018-07-16 日商Ｈｏｙａ股份有限公司 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法
JP2015090421A (ja) * 2013-11-06 2015-05-11 Hoya株式会社 薄膜付き基板及び転写用マスクの製造方法
US20150198896A1 (en) * 2014-01-16 2015-07-16 Nuflare Technology, Inc. Exposure mask fabrication method, exposure mask fabrication system, and semiconductor device fabrication method

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Publication number Publication date
WO2020095959A1 (fr) 2020-05-14
TW202036668A (zh) 2020-10-01
JP7492456B2 (ja) 2024-05-29
JPWO2020095959A1 (ja) 2021-10-07

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