TWI907607B - 氧化矽熱反射板 - Google Patents

氧化矽熱反射板

Info

Publication number
TWI907607B
TWI907607B TW110148379A TW110148379A TWI907607B TW I907607 B TWI907607 B TW I907607B TW 110148379 A TW110148379 A TW 110148379A TW 110148379 A TW110148379 A TW 110148379A TW I907607 B TWI907607 B TW I907607B
Authority
TW
Taiwan
Prior art keywords
silicon oxide
reflector
plate
film
oxide plate
Prior art date
Application number
TW110148379A
Other languages
English (en)
Chinese (zh)
Other versions
TW202225625A (zh
Inventor
丸子智弘
石黒好裕
松村尊信
大川裕也
Original Assignee
日商古屋金屬股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2021098989A external-priority patent/JP7096409B1/ja
Application filed by 日商古屋金屬股份有限公司 filed Critical 日商古屋金屬股份有限公司
Publication of TW202225625A publication Critical patent/TW202225625A/zh
Application granted granted Critical
Publication of TWI907607B publication Critical patent/TWI907607B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
TW110148379A 2020-12-28 2021-12-23 氧化矽熱反射板 TWI907607B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2020-218598 2020-12-28
JP2020218598 2020-12-28
JP2021098989A JP7096409B1 (ja) 2020-12-28 2021-06-14 シリカ熱反射板
JP2021-098989 2021-06-14
PCT/JP2021/046703 WO2022145255A1 (ja) 2020-12-28 2021-12-17 シリカ熱反射板
WOPCT/JP2021/046703 2021-12-17

Publications (2)

Publication Number Publication Date
TW202225625A TW202225625A (zh) 2022-07-01
TWI907607B true TWI907607B (zh) 2025-12-11

Family

ID=82259230

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110148379A TWI907607B (zh) 2020-12-28 2021-12-23 氧化矽熱反射板

Country Status (4)

Country Link
JP (1) JP2022104640A (ko)
KR (1) KR102813402B1 (ko)
TW (1) TWI907607B (ko)
WO (1) WO2022145255A1 (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778779A (ja) * 1993-09-07 1995-03-20 Fuji Electric Co Ltd 輻射熱防止板およびその使用方法
JPH09148315A (ja) * 1995-11-20 1997-06-06 Tokyo Electron Ltd 熱処理装置及び処理装置
JPH11340157A (ja) * 1998-05-29 1999-12-10 Sony Corp 光照射熱処理装置および光照射熱処理方法
JP2000150396A (ja) * 1998-11-16 2000-05-30 Sakaguchi Dennetsu Kk 熱放射リフレクター
JP2001102319A (ja) * 1999-09-29 2001-04-13 Toshiba Ceramics Co Ltd 熱処理装置
TW201210807A (en) * 2010-09-10 2012-03-16 Sumitomo Heavy Industries Reflection panel for heater

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197360A (ja) 1997-09-22 1999-04-09 Tokyo Electron Ltd 縦型熱処理装置
JP4144268B2 (ja) * 2002-06-28 2008-09-03 信越半導体株式会社 縦型熱処理装置
JP4172806B2 (ja) 2006-09-06 2008-10-29 三菱重工業株式会社 常温接合方法及び常温接合装置
JP5191225B2 (ja) 2007-12-18 2013-05-08 オリンパスメディカルシステムズ株式会社 内視鏡洗浄消毒装置
JP6032667B2 (ja) 2012-08-31 2016-11-30 国立研究開発法人産業技術総合研究所 接合方法
JP7152711B2 (ja) 2018-06-20 2022-10-13 日本電産マシンツール株式会社 接合基板の製造方法及び接合基板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778779A (ja) * 1993-09-07 1995-03-20 Fuji Electric Co Ltd 輻射熱防止板およびその使用方法
JPH09148315A (ja) * 1995-11-20 1997-06-06 Tokyo Electron Ltd 熱処理装置及び処理装置
JPH11340157A (ja) * 1998-05-29 1999-12-10 Sony Corp 光照射熱処理装置および光照射熱処理方法
JP2000150396A (ja) * 1998-11-16 2000-05-30 Sakaguchi Dennetsu Kk 熱放射リフレクター
JP2001102319A (ja) * 1999-09-29 2001-04-13 Toshiba Ceramics Co Ltd 熱処理装置
TW201210807A (en) * 2010-09-10 2012-03-16 Sumitomo Heavy Industries Reflection panel for heater

Also Published As

Publication number Publication date
KR20230069174A (ko) 2023-05-18
TW202225625A (zh) 2022-07-01
KR102813402B1 (ko) 2025-05-27
WO2022145255A1 (ja) 2022-07-07
JP2022104640A (ja) 2022-07-08

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