UA95942C2 - Способ получения солнечного элемента применение тетрахлорида кремния в нем и тонкопленочный солнечный элемент полученный данным способом - Google Patents

Способ получения солнечного элемента применение тетрахлорида кремния в нем и тонкопленочный солнечный элемент полученный данным способом

Info

Publication number
UA95942C2
UA95942C2 UAA200810617A UAA200810617A UA95942C2 UA 95942 C2 UA95942 C2 UA 95942C2 UA A200810617 A UAA200810617 A UA A200810617A UA A200810617 A UAA200810617 A UA A200810617A UA 95942 C2 UA95942 C2 UA 95942C2
Authority
UA
Ukraine
Prior art keywords
silicon
silicon tetrachloride
substrate
relates
film solar
Prior art date
Application number
UAA200810617A
Other languages
English (en)
Ukrainian (uk)
Inventor
Раймунд Зонненшайн
Хартвиг Рауледэр
Ханс Юрген Хьонэ
Штефан Ребер
Норберт Шиллингер
Original Assignee
Эвоник Дегусса Гмбх
Фраунхофер-Гезельшафт Цур Фьордерунг Дер Ангевандтен Форшунг Е.Ф.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Эвоник Дегусса Гмбх, Фраунхофер-Гезельшафт Цур Фьордерунг Дер Ангевандтен Форшунг Е.Ф. filed Critical Эвоник Дегусса Гмбх
Publication of UA95942C2 publication Critical patent/UA95942C2/ru

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • H10F71/1221The active layers comprising only Group IV materials comprising polycrystalline silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
UAA200810617A 2006-01-25 2006-07-12 Способ получения солнечного элемента применение тетрахлорида кремния в нем и тонкопленочный солнечный элемент полученный данным способом UA95942C2 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006003464A DE102006003464A1 (de) 2006-01-25 2006-01-25 Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung

Publications (1)

Publication Number Publication Date
UA95942C2 true UA95942C2 (ru) 2011-09-26

Family

ID=37759272

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200810617A UA95942C2 (ru) 2006-01-25 2006-07-12 Способ получения солнечного элемента применение тетрахлорида кремния в нем и тонкопленочный солнечный элемент полученный данным способом

Country Status (11)

Country Link
US (1) US20080289690A1 (ru)
EP (1) EP1977454A1 (ru)
JP (1) JP2009524739A (ru)
KR (1) KR20080095240A (ru)
CN (2) CN101008079A (ru)
BR (1) BRPI0621288A2 (ru)
DE (1) DE102006003464A1 (ru)
NO (1) NO20083569L (ru)
RU (1) RU2438211C2 (ru)
UA (1) UA95942C2 (ru)
WO (1) WO2007085322A1 (ru)

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CN112271237B (zh) * 2020-11-06 2022-04-22 江苏杰太光电技术有限公司 一种TOPCon太阳能电池原位掺杂钝化层的制备方法和系统
CN112481606A (zh) * 2020-11-10 2021-03-12 江苏杰太光电技术有限公司 一种pecvd沉积太阳能电池掺杂层的气源和系统
KR102517722B1 (ko) * 2021-05-31 2023-04-04 주식회사 비이아이랩 기상 전기 환원법을 이용한 실리콘의 제조방법
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Also Published As

Publication number Publication date
EP1977454A1 (en) 2008-10-08
JP2009524739A (ja) 2009-07-02
WO2007085322A1 (en) 2007-08-02
CN101008079A (zh) 2007-08-01
DE102006003464A1 (de) 2007-07-26
NO20083569L (no) 2008-08-15
RU2438211C2 (ru) 2011-12-27
RU2008134311A (ru) 2010-02-27
BRPI0621288A2 (pt) 2011-12-06
CN103952680A (zh) 2014-07-30
US20080289690A1 (en) 2008-11-27
KR20080095240A (ko) 2008-10-28

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