NO20083569L - Fremgangsmate for a produsere silisiumtynnfilm pa en substratflate ved dampdeponering - Google Patents

Fremgangsmate for a produsere silisiumtynnfilm pa en substratflate ved dampdeponering

Info

Publication number
NO20083569L
NO20083569L NO20083569A NO20083569A NO20083569L NO 20083569 L NO20083569 L NO 20083569L NO 20083569 A NO20083569 A NO 20083569A NO 20083569 A NO20083569 A NO 20083569A NO 20083569 L NO20083569 L NO 20083569L
Authority
NO
Norway
Prior art keywords
thin film
vapor deposition
substrate surface
silicon thin
producing silicon
Prior art date
Application number
NO20083569A
Other languages
English (en)
Inventor
Raymund Sonnenschein
Hartwig Rauleder
Hans Jurgen Hone
Stefan Reber
Norbert Schillinger
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of NO20083569L publication Critical patent/NO20083569L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Oppfinnelsen vedrører en fremgangsmåte for fremstilling av en silisiumfilm på en substratflate ved hjelp av dampdeponering, med utgangspunkt i en silisiumbasert forløper. Det som kjennetegner oppfinnelsen er at den benyttede forløperen er silisiumtetraklorid. Oppfinnelsen vedrører ogsa tynnfilm-solceller eller krystallinske silisium-tynnfilmsolceller som kan oppnås med fremgangsmåten ifølge oppfinnelsen. Oppfinnelsen vedrører også bruk av silisiumtetraklorid for fremstilling av en film som er deponert på et substrat fra dampfasen.
NO20083569A 2006-01-25 2008-08-15 Fremgangsmate for a produsere silisiumtynnfilm pa en substratflate ved dampdeponering NO20083569L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006003464A DE102006003464A1 (de) 2006-01-25 2006-01-25 Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung
PCT/EP2006/069405 WO2007085322A1 (en) 2006-01-25 2006-12-07 Process for producing a silicon film on a substrate surface by vapor deposition

Publications (1)

Publication Number Publication Date
NO20083569L true NO20083569L (no) 2008-08-15

Family

ID=37759272

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20083569A NO20083569L (no) 2006-01-25 2008-08-15 Fremgangsmate for a produsere silisiumtynnfilm pa en substratflate ved dampdeponering

Country Status (11)

Country Link
US (1) US20080289690A1 (no)
EP (1) EP1977454A1 (no)
JP (1) JP2009524739A (no)
KR (1) KR20080095240A (no)
CN (2) CN103952680A (no)
BR (1) BRPI0621288A2 (no)
DE (1) DE102006003464A1 (no)
NO (1) NO20083569L (no)
RU (1) RU2438211C2 (no)
UA (1) UA95942C2 (no)
WO (1) WO2007085322A1 (no)

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CN102916080A (zh) * 2012-10-22 2013-02-06 江苏荣马新能源有限公司 一种晶体硅太阳能电池双层减反射膜的制备方法
CN112271237B (zh) * 2020-11-06 2022-04-22 江苏杰太光电技术有限公司 一种TOPCon太阳能电池原位掺杂钝化层的制备方法和系统
CN112481606A (zh) * 2020-11-10 2021-03-12 江苏杰太光电技术有限公司 一种pecvd沉积太阳能电池掺杂层的气源和系统
KR102517722B1 (ko) * 2021-05-31 2023-04-04 주식회사 비이아이랩 기상 전기 환원법을 이용한 실리콘의 제조방법
CN115000240B (zh) * 2022-05-24 2023-09-05 天合光能股份有限公司 隧穿氧化层钝化接触电池的制备方法以及钝化接触电池

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Also Published As

Publication number Publication date
CN101008079A (zh) 2007-08-01
WO2007085322A1 (en) 2007-08-02
RU2438211C2 (ru) 2011-12-27
CN103952680A (zh) 2014-07-30
DE102006003464A1 (de) 2007-07-26
US20080289690A1 (en) 2008-11-27
RU2008134311A (ru) 2010-02-27
EP1977454A1 (en) 2008-10-08
BRPI0621288A2 (pt) 2011-12-06
UA95942C2 (ru) 2011-09-26
JP2009524739A (ja) 2009-07-02
KR20080095240A (ko) 2008-10-28

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