US20040187731A1 - Acid copper electroplating solutions - Google Patents

Acid copper electroplating solutions Download PDF

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Publication number
US20040187731A1
US20040187731A1 US10/823,982 US82398204A US2004187731A1 US 20040187731 A1 US20040187731 A1 US 20040187731A1 US 82398204 A US82398204 A US 82398204A US 2004187731 A1 US2004187731 A1 US 2004187731A1
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US
United States
Prior art keywords
poly
carrier
copper
mercapto
bis
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/823,982
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English (en)
Inventor
Qing Wang
Weiji Huang
Miu Lau
Carol Liu
Ce Ma
Edward Chang
Wenpin Ho
Richard Paciej
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Individual
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Priority to US10/823,982 priority Critical patent/US20040187731A1/en
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Definitions

  • the present invention is related to an improved acid copper electroplating composition. More particularly, the present invention relates to the use of new carriers, brighteners and levelers as well as molecules that combine carrier/brightener and carrier/leveler functionality.
  • Copper electroplating bath solutions are used in a variety of industries. In the semiconductor industry, there is an increasing need for these baths to meet decreasing device feature size, increasing wafer size and high yield.
  • Various proprietary electroplating bath chemistries are commercially available that claim success with regards to the copper metallization process.
  • the bath chemistry should help to fill with copper small yet high aspect ratio trenches and vias, e.g. ⁇ 0.18 ⁇ m and aspect ratio >5, to obtain uniform and void free plating while maintaining high production rates.
  • the plating bath chemistries should also be relatively chemically stable, less corrosive and easily monitored and replenished.
  • Copper sulfate and sulfuric acid are the basics of the acid copper electroplating bath chemistry.
  • Organic additives such as carriers, brighteners, levelers and combinations of these can offer a plating bath to fill the small and high aspect ratio trenches and vias without voids or seams.
  • As-plated copper deposits are of uniform thickness and fine grain size, and highly ⁇ 111> crystal orientated.
  • Brighteners not only produce fine and orientated grain structure for the as-plated deposits but also provide better chemical stability and solubility in the electroplating bath.
  • Brighteners are typically water-soluble sulfonic acids containing mercapto and/or thio groups.
  • U.S. Pat. No. 5,151,170 teaches a brightener that consists essentially of the hydrogen peroxide oxidation product of a dialkylamino-thioxomethyl-thioalkanesulfonic acid wherein each alkyl and alkane group individually contains 1 to 6 carbon atoms. They can produce fine copper deposits by masking the preferential growth sites/planes.
  • Current brighteners can suffer from poor stability, oxidation by air and electrochemical oxidation at the anode, as well as catalytic decomposition at the copper surface. The decomposed products are often detrimental to copper deposition properties.
  • Levelers play a key role in void and seam free trench filling, i.e., superfilling or bottom-up filling.
  • the deposition rate needs to be much faster at the bottom of the features than on the side wall and shoulder of the trenches and vias.
  • different molecular size levelers are employed to tailor different generation (or size) of trenches and vias.
  • the large molecular size is usually preferred for the filling of larger trenches and vias since the diffusion of the levelers towards the bottom of trenches is much slower, which in turn, results in extremely low leveler flux at the bottom and promotes bottom-up filling or superfilling.
  • the larger molecular size can eventually block the openings and prevent the copper ions from entering the trenches. This consequently creates voids when the size of the trench and vias is greatly reduced (e.g., ⁇ 0.1 ⁇ m).
  • the as-plated copper deposits can complete self-annealing process in several hours to have a stable microstructure at room temperature.
  • U.S. Pat. No. 5,051,154 teaches an aqueous electroplating solution comprising at least one soluble copper salt, an electrolyte and at least one organic additive capable of modifying the charge transfer overpotential of the solution in an amount sufficient to shift the overpotential by at least 150 millivolts and being independent of solution agitation.
  • This reference teaches using a wetting agent as a component additive in the system capable of modifying the charge transfer overpotential.
  • Additional additives can include a brightener along with the wetting agent and this can be selected from the group consisting of n,n-dimethyl-dithiocarbamic acid-(3-sulfopropyl) ester; 3-mercapto-propylsulfonic acid(sodium salt); carbonic acid-dithio-o-ethylester-s-ester with 3-mercapto-1-propane sulfonic acid(potassium salt); bisulfopropyl disulfide; 3-(benzthiazolyl-s-thio) propyl sulfonic acid (sodium salt); and pyridinium propyl sulfobetaine.
  • a brightener along with the wetting agent and this can be selected from the group consisting of n,n-dimethyl-dithiocarbamic acid-(3-sulfopropyl) ester; 3-mercapto-propylsulfonic acid(sodium salt); carbon
  • the three component additive may also include levelers such as those selected from the group including 1-(2-hydroxyethyl)-2-imidazolidinethione; 4-mercaptopyridine; 2-mercaptothiazoline; ethylene thiourea; thiourea; and alkylated polyalkyleneimine.
  • levelers such as those selected from the group including 1-(2-hydroxyethyl)-2-imidazolidinethione; 4-mercaptopyridine; 2-mercaptothiazoline; ethylene thiourea; thiourea; and alkylated polyalkyleneimine.
  • the present invention provides for an improved acid copper electroplating bath composition and method for preparing them.
  • the composition comprises an aqueous solution of acid and copper salt, and the improvement comprises the addition of at least one of a carrier; a water soluble mercapto-containing organic brightener compound; and a leveler which comprises an organic compound containing single or multiply charged centers in acidic bath solution.
  • the present invention provides for a method for copper plating or metallization of advanced interconnects (less than 0.18 microns and having an AR (Aspect Ratio) greater than 6) comprising immersing a substrate intended for advanced interconnects into the copper electroplating composition and conducting an electrochemical deposition process.
  • an acid and copper salt are employed.
  • the acid is typically sulfuric acid while the copper salt can be selected from the group consisting of copper sulfate, copper acetate, copper fluoborate, cupric nitrate and copper pyrophosphate.
  • Additional inorganic additives can include both chloride and alkaline species.
  • the chloride can enhance cathode surface adsorption of organic additives such as the carrier and improve the oxidation of the anodes to improve plating efficiency.
  • Alkaline species such as ammonium hydroxide are added to reduce the acidity and corrosivity of this bath solution. Chloride is added in an amount of about 20 to 100 parts per million parts water in the bath, while the alkaline is added in an amount necessary to reduce the solution's pH.
  • the acid copper electroplating solution will have from about 50 to about 250 grams of copper salt per liter of water and about 60 to about 250 grams of sulfuric acid per liter of water.
  • organic additives such as carriers, brighteners, levelers, and combinations of these are also employed to obtain high throwing power to fill the small and high aspect ratio trenches and vias.
  • the carriers used in this invention can comprise conventional ones in the art, e.g., polyethylene glycol and poly(ethylene oxide), and a new class of carriers—polysaccharides.
  • the polysaccharides consist of simple sugars such as fructose and glucose linked by glycosidic bonds. Representative examples include but are not limited to starch, cellulose, amylopectin and amylose.
  • the brighteners useful in this invention possess both stability and solubility in the copper electroplating bath.
  • the brighteners include both water soluble mercapto-containing organic compounds and other organic sulfides. Representative examples include but are not limited to N-methylallyl-N′-methylthiourea; tetramethylthiuram disulfide; ethylethylthiomethyl sulfoxide; ammonium diethyldithiocarbamate; dimethyl-2-thioxo-1,3-dithiole-4,5-dicarboxylate; 3-mercapto-1-propanesulfonic acid sodium salt; 3-mercapto-1-propanesulfonic acid; bis (2-mercaptoethyl) sulfide; ethylene trithio carbonate; ethanethiol; 2-mercaptoethanol; monothioglycerol (1-thioglycerol); 1,2-ethanedithiol; and thiodiethanol.
  • the most preferred brighteners are ammonium diethyldithiocarbamate, 3-mercapto-1-propanesulfonic acid sodium salt, and its free acid form.
  • 3-Mercapto-1-propanesulfonic acid is prepared from 3-mercapto-1-propanesulfonic acid sodium salt by an ion-exchange process using cation ion-exchange resins such as Dowex DR2030 (20-30 mesh), Dowex HCR-W2 (16-40 mesh), Dowex 50Wx8-100 (50-100 mesh, 1.7 meq/mL, 0.80 g/ML), and Dowex 50Wx8-200 (100-200 mesh, 1.7 meq/mL, 0.80 g/mL).
  • the sodium level can be reduced to a few ppm from ⁇ 1500 ppm in original 1 wt. % aqueous solution. Both a packed column with ion-exchange resin and a reaction flask approach using ion- exchange resin can remove sodium to low ppm levels.
  • the need for a sodium-free brightener is important in avoiding sodium contamination of the copper deposited thin layer.
  • the 3-mercapto-1-propanesulfonic acid was prepared by both ion-exchange column and in a reaction flask, and sodium removal efficiency was better than 99% for both methods. This is important regarding bath life as the buildup of sodium in the bath over time would require the bath to be dumped and replenished once the sodium level becomes unacceptably high.
  • the levelers useful in this invention possess single or multiple positively charged centers that will form single or multiple positively charged sites after protonation in the acidic conditions of the bath.
  • the levelers are divided into three groups—polymeric levelers, low molecular weight levelers, and organic dyes.
  • polymeric levelers include but are not limited to polyethylenimine, 80% ethoxylated; poly(allylamine); poly(allylamine hydrochloride); polyaniline, sulfonated, 5 wt.
  • the most preferred polymeric levelers are poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea, quaternited, and poly(diallyldimethylammonium chloride).
  • low molecular weight levelers include but are not limited to N-containing acyclic systems, N-containing five-membered heterocyclic systems, and N-containing six-membered heterocyclic systems. Most of them also contains mercapto-, sulfide, or disulfide functionalities.
  • N-containing acyclic systems include 2,5-dithiobiurea, dithiooxamide, 1-phenyl-2-thiourea, and diethylenetriamine. The most preferred one is diethylenetriamine.
  • N-containing five/six-membered heterocyclic systems include p-xylenebis(tetrahydrothiophenium) chloride, 2-thiohydantoin, pseudo thiohydantoin, (R)-(-)-thiazolidine-4-carboxylic acid, 3-(2′-thiopyridinium) propyl sulfonate, 2,2′-dipyridyl disulfide, 4,4′-dipyridyl disulfide, thionicotinamide, 4-(trifluoromethyl) -2-pyrimidinethiol, 2-mercapto-4-methylpyrimidine hydrochloride, 5-phenyl-1H-1,2,4-triazole-3-thiol, 5-(4′-pyridyl)-1H-1,2,4-triazole-3-thiol, 2-amino-6-purinethiol, 4-amino-5-(4′-pyridyl)-4H-1,2,4-triazole
  • organic dyes include but are not limited to Bismarck Brown Y, Chicago Sky Blue 6B, and Acid Violet.
  • the organic additives are constantly consumed due to breakdown and oxidation in the electroplating process.
  • the consumed additives are generally compensated for by a replenishing process to maintain constant bath chemistry. Numerous consumption/replenishment cycles may proceed before a complete replacement of the plating bath is necessary. As a result of this process, there is an accumulation of contaminants which can be a critical problem. The contaminants may interfere with the functioning of organic additives and may cause inconsistent plating that is unacceptable to the semiconductor industry.
  • the invention further comprises the use of molecules that combine brightener/carrier and carrier/leveler functionalities.
  • the combination of brightener/carrier is typically a monomeric to polymeric protein chain where the chain is linked by sulfide and disulfide bridges.
  • the combination of carrier/leveler can help improve the stability of the leveler while simplifying the bath by reducing the number of organic additives.
  • Such materials can be poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea, quaternited, and poly(melamine-co-formaldehyde), partially methylated.
  • the carrier of the present invention may be added in an amount ranging from about 2 to about 1000 parts per million parts water.
  • the leveler may be added in an amount of about 2 parts to about 1000 parts per million parts of water in the electroplating solution.
  • the brightener may be added in an amount ranging from about 5 parts to about 100 parts per million parts water.
  • the combination carrier/brightener When employed, it is added in an amount ranging from about 5 to about 100 parts per million parts water.
  • the combination carrier/leveler when employed may be added in an amount ranging from about 2 to about 1000 parts per million.
  • additives that are found in the baths include wetting agents such as carboxylic acids and antioxidants.
  • Carboxylic acids such as citric acid improve wetting ability of the cathode and provide better adsorption of the organic additives to the cathode.
  • these are added in a range of about 2 to about 1000 parts per million parts water in the bath.
  • Brighteners tend to be oxidized in the vicinity of the anode during and without plating. Oxidized brighteners lose their functionality and cause an inconsistent plating rate and poor quality of the as-plated object.
  • the oxidizing agents near the cathode are typically hydrogen peroxide and oxygen. The present inventors have discovered that continuously purging the bath solution near the anode side with an inert gas will expel oxygen out of the solution.
  • the additive packages of the present invention may be added to the aqueous acid copper electroplating bath either individually or as combinations depending upon the type of substrate being plated.
  • the plating solutions of this invention are used in a conventional manner. They are preferably used at room temperature or higher temperature. During plating, the bath solution is preferably agitated by inert gas, air sparger or by mechanical means.
  • the plating current density can range between 3 mA/cm 2 and 40 mA/cm 2 depending on aspect ratio of trenches and vias.
  • the wave form can be direct current (DC), pulse current (PC) or pulse reverse current (PRC).

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
US10/823,982 1999-07-15 2004-04-14 Acid copper electroplating solutions Abandoned US20040187731A1 (en)

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US14415999P 1999-07-15 1999-07-15
US58359900A 2000-05-31 2000-05-31
US10/823,982 US20040187731A1 (en) 1999-07-15 2004-04-14 Acid copper electroplating solutions

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EP (1) EP1069211A3 (de)
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KR (1) KR20010015342A (de)

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