US20050191973A1 - High-frequency circuit device - Google Patents

High-frequency circuit device Download PDF

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Publication number
US20050191973A1
US20050191973A1 US11/058,853 US5885305A US2005191973A1 US 20050191973 A1 US20050191973 A1 US 20050191973A1 US 5885305 A US5885305 A US 5885305A US 2005191973 A1 US2005191973 A1 US 2005191973A1
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Prior art keywords
frequency
transmission
amplifier
frequency band
circuit device
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Abandoned
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US11/058,853
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English (en)
Inventor
Kunihiko Kanazawa
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Panasonic Corp
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Matsushita Electric Industrial Co Ltd
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Assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. reassignment MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANAZAWA, KUNIHIKO
Publication of US20050191973A1 publication Critical patent/US20050191973A1/en
Priority to US12/152,803 priority Critical patent/US7706835B2/en
Assigned to PANASONIC CORPORATION reassignment PANASONIC CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K97/00—Accessories for angling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0067—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands
    • H04B1/0082—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands with a common local oscillator for more than one band
    • H04B1/0089—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands with a common local oscillator for more than one band using a first intermediate frequency higher that the highest of any band received
    • H04B1/0092—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands with a common local oscillator for more than one band using a first intermediate frequency higher that the highest of any band received using a wideband front end
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0483—Transmitters with multiple parallel paths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K91/00—Lines
    • A01K91/03—Connecting devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

Definitions

  • the present invention relates to a high-frequency circuit device in a transmission/reception part of a high-frequency radio set, specifically, a mobile communication apparatus such as a mobile phone or the like. More specifically, this invention relates to a multiband high-frequency circuit device including a semiconductor amplifier circuit (hereinafter, referred to as a transmission amplifier circuit) for high-frequency power transmission and a switch circuit for switching among a plurality of frequency bands.
  • a semiconductor amplifier circuit hereinafter, referred to as a transmission amplifier circuit
  • switch circuit for switching among a plurality of frequency bands.
  • a W-CDMA (Wideband-Code Division Multiple Access) system or a CDMA (Code Division Multiple Access) system such as is used for a mobile phone or the like
  • some types of mobile phones use a plurality of frequency bands including frequency bands that differ by not less than 200 MHz from each other, for example, 2 GHz in combination with 1.7 GHz, the frequency band of 1.4 to 1.5 GHz, or the frequency band of 800 to 900 MHz.
  • a transmission amplifier circuit that transmits high-frequency power from an antenna is configured using separate high-frequency amplifiers with respect to the respective frequency bands for the following reason. That is, when a conventional linear high-frequency amplifier that receives a quadrature modulation signal is operated to perform a linear amplification operation on a wide frequency band, the current consumption increases considerably.
  • FIG. 6 is a block diagram showing an example of the configuration of a conventional high-frequency circuit device.
  • a W-CDMA transmission signal Tx (0.8) in the frequency band of 800 MHz to 900 MHz is input to a high-frequency amplifier 1 of a transmission amplifier circuit and amplified.
  • a W-CDMA transmission signal Tx (2) in the frequency band of 1.9 GHz to 2.0 GHz is input to a high-frequency amplifier 2 of the transmission amplifier circuit and amplified.
  • duplexers 9 and 9 are filters for separating signals into a transmission signal and a reception signal so as to enable simultaneous transmission/reception.
  • the isolators 27 are used to avoid the deterioration of a distortion characteristic in operations of the high-frequency amplifiers 1 and 2 , which might result from an impedance that deviates from 50 ohms when an antenna 7 is brought close to metal or a human head.
  • a multi-switch circuit 8 for switching among transmission frequency bands is connected between the antenna 7 and the duplexers 9 so as to select a transmission frequency band and supply the antenna 7 with signals in the transmission frequency band.
  • the multi-switch circuit 8 selects a reception frequency band.
  • reception signals are supplied from the antenna 7 to the duplexers 9 and 9 via the multi-switch circuit 8 and are received as a reception signal Rx (0.8) and an Rx signal (2) via SAW filters (SAW) 11 and 11 and low-noise amplifiers (LNA) 12 and 12 , respectively.
  • SAW SAW filters
  • LNA low-noise amplifiers
  • the reception side of each of the duplexers 9 may be configured as one filter.
  • the multi-switch circuit 8 using a high frequency is formed of a GaAs switch.
  • the multi-switch circuit 8 also may be formed of a pin diode.
  • FIG. 7 is a block diagram showing an example of the configuration of a conventional high-frequency circuit device including high-frequency amplifiers with respect to three frequency bands.
  • a W-CDMA transmission signal Tx (1.7) at a frequency of 1.7 GHz is input to a high-frequency amplifier 30 and amplified.
  • a multi-switch circuit 8 for switching among transmission frequency bands is connected between an antenna 7 and the duplexer 9 so as to select a transmission frequency band and supply the antenna 7 with signals in the transmission frequency band.
  • the multi-switch circuit 8 selects a reception frequency band.
  • a reception signal is supplied from the antenna 7 to the duplexer 9 via the multi-switch circuit 8 and is received as a reception signal Rx (1.7) via a SAW filter (SAW) 11 and a low-noise amplifier (LNA) 12 .
  • SAW SAW filter
  • LNA low-noise amplifier
  • the high-frequency amplifiers 1 , 2 and 30 are formed of a FET or HBT (heterobipolar transistor) that is made from GaAs, or a HBT made from SiGe.
  • FET field-effect transistor
  • HBT heteropolar transistor
  • FIG. 8 is a block diagram showing an example of the configuration of a conventional high-frequency circuit device that includes high-frequency amplifiers with respect to three frequency bands and conforms to a wireless LAN (Local Area Network).
  • a wireless LAN Local Area Network
  • a high-frequency amplifier 30 for a wireless LAN with the frequency band of 2.4 GHz is required in addition to high-frequency amplifiers 1 and 2 for W-CDMA.
  • the above-described configuration used for a wireless LAN also applies to the case where a signal in the frequency band of 2.4 GHz to 2.7 GHz according to the W-CDMA, TD-CDMA, or TD-SCDMA system exists.
  • a high-frequency circuit device is a high-frequency circuit device that is conformable to the W-CDMA or CDMA system in which a plurality of transmission frequency bands exist.
  • the high-frequency circuit device has a configuration including a transmission amplifier circuit for transmitting high-frequency power from an antenna, which includes at least one high-frequency amplifier for a wide frequency band that amplifies signals in a plurality of transmission frequency bands differing by not less than 200 MHz from each other, a duplexer that is provided for performing simultaneous transmission/reception, upstream and downstream switch circuits in the direction of transmission that are provided so as to sandwich the duplexer between the high-frequency amplifier for a wide frequency band and the antenna and are switched on when the simultaneous transmission/reception is performed, and a power supply amplitude modulator that supplies an amplitude modulation voltage to a power supply terminal of the transmission amplifier circuit.
  • phase information of a transmission signal is supplied to a signal input terminal and an amplitude modulation voltage corresponding to amplitude information of the transmission signal is supplied from the power supply amplitude modulator to the power supply terminal so that polar modulation or polar loop modulation is performed.
  • a high-frequency circuit device for a mobile phone that is conformable to two, three, four or a higher number of frequency bands according to the W-CDMA system can be realized using high-frequency amplifiers reduced in number to as few as one or two. Further, there is no need to provide isolators so as to correspond to the respective frequency bands, and thus the cost of a high-frequency amplifier and an isolator can be reduced to one-third to one-fifth. Further, a loss caused by an isolator can be eliminated, and thus current consumption of a high-frequency amplifier in a W-CDMA operation can be reduced by about 20%, namely, by 40 to 70 mA.
  • a wireless LAN function also can be realized in the following manner. That is, a high-frequency amplifier for a wide frequency band amplifies a signal in a transmission frequency band corresponding to a wireless LAN and directly supplies the signal that has been amplified to a downstream switch circuit in the direction of transmission, and polar modulation or polar loop modulation is performed.
  • a high-frequency circuit device can be provided that achieves cost reduction (to one-third to one-fifth) and reduction in power consumption (about 20% decrease) and does not require an additional high-frequency amplifier even when a transmission frequency band is newly added, thereby providing a substantial effect.
  • FIG. 1 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a first embodiment of the present invention.
  • FIG. 2 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a second embodiment of the present invention.
  • FIG. 3 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a third embodiment of the present invention.
  • FIG. 4 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a fourth embodiment of the present invention.
  • FIG. 5 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a fifth embodiment of the present invention.
  • FIG. 6 is a block diagram showing an example of the configuration of a high-frequency circuit device according to Conventional Example 1.
  • FIG. 7 is a block diagram showing an example of the configuration of a high-frequency circuit device according to Conventional Example 2.
  • FIG. 8 is a block diagram showing an example of the configuration of a high-frequency circuit device according to Conventional Example 3.
  • FIG. 1 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a first embodiment of the present invention.
  • an amplitude modulation voltage corresponding to an amplitude signal AS Tx is supplied from a power supply amplitude modulator 10 to a power supply terminal of each of high-frequency amplifiers 1 and 18 that constitute a transmission amplifier circuit.
  • the high-frequency amplifiers 1 and 18 perform a polar modulation or polar loop modulation operation.
  • this embodiment has the following configuration. That is, firstly, all of the W-CDMA operations are performed based on polar modulation or polar loop modulation. To this end, a phase signal is input to a high-frequency amplifier, and an amplitude modulation voltage further is input to its power supply terminal. Thus, it is no longer necessary to provide a conventional linear amplifier. Further, the high-frequency amplifier in polar modulation operation can be realized by a high-frequency amplifier in saturation operation, and thus a high-frequency amplifier that is conformable to an extremely wide frequency band can be realized.
  • polar modulation can be realized by designing the power supply amplitude modulator 10 in a high frequency operation with the current semiconductor technology using higher frequencies and a duplexer (shared device) so as to avoid an influence on other frequencies when removing an isolator that will be described later.
  • a phase signal PS Tx (0.8) in the frequency band of 800 to 900 MHz according to the W-CDMA system is amplified by the high-frequency amplifier 1 .
  • a phase signal PS Tx (1.7-2) in the frequency band of 1,700 to 2,100 MHz according to the W-CDMA system is amplified by the high-frequency amplifier 18 for a wide frequency band.
  • polar modulation or polar loop modulation a high-frequency amplifier in saturation operation, which is conformable to such a wide frequency band, can be realized.
  • a gain-controllable driver amplifier 5 is housed to perform dynamic range expansion according to the W-CDMA system.
  • an amplitude modulation voltage corresponding to amplitude information of a transmission signal is input from the power supply amplitude modulator 10 to the power supply terminal of each of the high-frequency amplifiers 1 and 18 .
  • Output signals of the high-frequency amplifier 18 are input to duplexers 32 and 33 via upstream switch circuits 21 and 21 in the direction of transmission, respectively.
  • the duplexers are filters for separating signals according to their frequency bands so as to perform transmission and reception simultaneously.
  • the duplexers 31 , 32 and 33 have the following configuration. That is, when each of signals in the frequency bands of, for example, 800 to 900 MHz or 900 to 1,000 MHz, 1.7 GHz, and 2 GHz or 1.9 to 2 GHz from the high-frequency amplifiers is passed, originally, a selection is made among the duplexers 31 , 32 and 33 by the upstream switch circuits 21 in the direction of transmission.
  • the duplexers 31 , 32 and 33 also are provided with a blocking characteristic of suppressing signals at a frequency differing by not less than 200 MHz from that of a signal in a transmission frequency band.
  • a configuration without an isolator can be realized, and polar modulation or polar loop modulation can be performed.
  • the duplexer 33 for a frequency of 1.7 GHz suppresses an external transmission signal at a frequency of 1.4 to 1.5 GHz that originates in another mobile phone and enters from the antenna 7 , and prevents a phenomenon in which a disturbing signal in the vicinity of the frequency band of 2 GHz generated when a transmission signal in the frequency band of 1.7 GHz is output by the high-frequency amplifier 18 is emitted from the antenna 7 to disturb a reception signal and a transmission signal in the frequency band of 2 GHz of another mobile phone.
  • the duplexer 33 for a frequency of 1.7 GHz suppresses an external transmission signal at a frequency of 2 to 2.1 GHz that originates in another mobile phone and enters from the antenna 7 , and prevents a phenomenon in which a disturbing signal in the vicinity of the frequency band of 1.4 to 1.5 GHz generated when a transmission signal at a frequency of 1.7 GHz is output by the high-frequency amplifier 18 is emitted from the antenna 7 to disturb a reception signal and a transmission signal of another mobile phone in the frequency band of 1.4 to 1.5 GHz.
  • a downstream switch circuit (multi-switch) 8 in the direction of transmission for selecting a frequency band for transmission/reception is provided between the antenna 7 and the duplexers 32 and 33 so as to enable switching.
  • the upstream switch circuits 21 and the downstream switch circuit 8 are formed of a high-frequency switch (SW) made from GaAs. Further, this high-frequency switch also may be formed of a pin diode. Further, low-pass filters (LPF) 6 and 23 are used to suppress harmonics from the high-frequency amplifiers 1 and 18 .
  • the high-frequency amplifiers 1 and 18 are formed of a FET or HBT (heterobipolar transistor) that is made from GaAs or a HBT made from SiGe. Further, the high-frequency amplifiers 1 and 18 may be saturation amplifiers and thus may be formed of a MOS FET or bipolar transistor that is made from silicon.
  • SAW filters 11 When reception is performed, surface-acoustic-wave (SAW) filters 11 are used to limit a frequency.
  • the duplexers 31 , 32 and 33 may be provided with an enhanced filtering characteristic so as to serve as SAW filters also.
  • the number of high-frequency amplifier circuits to be used can be reduced from three to two, and the need to provide an isolator further can be eliminated, and thus a cost reduction by nearly half can be achieved. Further, since an isolator is not provided, an output loss can be reduced, and by polar modulation, a saturation operation can be performed. Thus, an electric current consumed in a high-frequency amplifier in a CDMA operation according to the W-CDMA or the like can be reduced by as much as about 30% to 80%.
  • FIG. 2 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a second embodiment of the present invention.
  • this embodiment is intended to represent the case of further including the W-CDMA in the frequency band of 1.4 GHz to 1.5 GHz.
  • a high-frequency amplifier for a wide frequency band whose saturation characteristic is utilized to enable an operation on a wider frequency band is used as a high-frequency amplifier 29 in operation on the frequency band of 1.5 GHz to 2 GHz.
  • a phase signal PS Tx (1.5-2) in the frequency band of 1.5 to 2 GHz is input to the high-frequency amplifier 29 .
  • a duplexer 34 is provided so as to be sandwiched between an upstream switch circuit 21 and a downstream switch circuit (multi-switch) 8 in the direction of transmission.
  • the duplexer 34 for a frequency of 1.5 GHz suppresses an external transmission signal in the frequency band of 800 to 900 GHz that originates in another mobile phone and enters from the antenna 7 , and prevents a phenomenon in which a disturbing signal in the vicinity of a frequency of 2 GHz generated when a transmission signal at a frequency of 1.4 to 1.5 GHz is output from the high-frequency amplifier 29 is emitted from the antenna 7 to disturb a reception signal and a transmission signal of another mobile phone in the frequency band of 2 GHz.
  • the number of high-frequency amplifiers to be used which was four in a conventional case, can be reduced to two, and the need to provide an isolator further can be eliminated, and thus a cost reduction to about not more than one-third can be achieved. Further, since an isolator is not provided, an output loss can be reduced, and by polar modulation, a saturation operation can be performed. Thus, an electric current consumed in a high-frequency amplifier in a CDMA operation according to the W-CDMA or the like can be reduced by as much as about 30% to 80%.
  • FIG. 3 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a third embodiment of the present invention.
  • this embodiment is intended to represent the case where all modes according to the W-CDMA in the frequency band of 800 MHz to 2 GHz further are realized using one high-frequency amplifier 20 .
  • a feedback circuit 35 is housed in a final amplification stage of the high-frequency amplifier 20 , thereby enabling an operation on a wider frequency band of 800 MHz to 2 GHz.
  • the feedback circuit 35 is formed of a resistance component and a direct-current cutting capacitor.
  • a phase signal PS Tx (0.8-2) in the frequency band of 800 MHz to 2 GHz is input to the high-frequency amplifier 20 .
  • each of duplexers 31 , 32 and 33 with the respective frequency bands is provided so as to be sandwiched between each upstream switch circuit 21 and a downstream switch circuit (multi-switch) 8 in the direction of transmission.
  • the number of high-frequency amplifiers to be used which was three in a conventional case, can be reduced to one, and the need to provide an isolator further can be eliminated, and thus a cost reduction to about not more than one-fourth can be achieved. Further, since an isolator is not provided, an output loss can be reduced, and by polar modulation, a saturation operation can be performed. Thus, an electric current consumed in a high-frequency amplifier in a CDMA operation according to the W-CDMA or the like can be reduced by as much as about 30% to 80%.
  • the same configuration can be realized by using a high-frequency amplifier with the frequency band of 800 MHz to 2.7 GHz.
  • FIG. 4 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a fourth embodiment of the present invention.
  • a low-pass filter (LPF) 23 attenuated second- and third-order harmonic components of transmission signals in the frequency bands of 1.7 GHz and 2 GHz so as to suppress signals at frequencies about not lower than 3 GHz sufficiently.
  • the transmission signals in the frequency bands of 1.7 GHz and 2 GHz from the high-frequency amplifier 20 pass through two switch circuits, i.e. switch circuits 22 and 21 before reaching the duplexers 33 and 32 , respectively, resulting in a large loss.
  • a low-pass filter (LPF) 24 with the frequency band of 1.7 GHz and a low-pass filter (LPF) 23 with the frequency band of 2 GHz are arranged between a switch circuit 21 and a duplexer 33 and between a switch circuit 21 and a duplexer 32 , respectively, and are provided with characteristics of attenuating second- and third-order harmonic components of a transmission signal in the frequency band of 1.7 GHz and a transmission signal in the frequency band of 2 GHz, respectively.
  • transmission signals in the frequency bands of 1.7 GHz and 2 GHz from a high-frequency amplifier 20 pass through only one switch circuit, i.e. a switch circuit 21 , before reaching the duplexers 33 and 32 , respectively, thereby allowing a loss to be reduced by 0.2 dB to 0.3 dB.
  • the number of high-frequency amplifiers to be used which was three in a conventional case, can be reduced to one, and the need to provide an isolator further can be eliminated, and thus a cost reduction to about not more than one-fourth can be achieved.
  • an output loss of a high-frequency amplifier with respect to the frequency bands of 1.7 GHz and 2 GHz can be reduced by about 10%, thereby allowing an electric current consumed in the high-frequency amplifier to be reduced further by as much as about 10%.
  • the third and fourth embodiments described the cases in which the W-CDMA in the frequency band of 1.4 to 1.5 GHz is not used. Needless to say, the case of using the above frequency band can be realized in the following manner. That is, as shown in FIG. 2 , a circuit including a duplexer for the frequency band of 1.4 to 1.5 GHz is added between the high-frequency amplifier and an antenna.
  • FIG. 5 is a block diagram showing an example of the configuration of a high-frequency circuit device according to a fifth embodiment of the present invention.
  • a transmission signal path 27 for a wireless LAN for directly supplying an output signal of a high-frequency amplifier 30 to a downstream switch circuit (multi-switch) 8 in the direction of transmission is provided, and thus communication is enabled by switching of the multi-switch 8 .
  • a reception amplifier 29 for a wireless LAN is connected to the multi-switch 8 via a SAW filter 11 , by which a reception signal Rx (LAN) is received when wireless LAN reception is performed.
  • a duplexer 33 for a frequency of 1.7 GHz suppresses an external transmission signal in the frequency band of 800 to 900 MHz or the frequency band of 900 to 1,000 MHz that originates in another mobile phone and enters from an antenna 7 , and prevents a phenomenon in which a disturbing signal at the vicinity of a frequency of 2.4 GHz or in the frequency band of 2.5 GHz to 2.7 GHz generated when a transmission signal in the frequency band of 1.7 GHz is output from the high-frequency amplifier 30 is emitted from the antenna 7 to disturb a reception signal and a transmission signal in the frequency band of 2.4 GHz or the frequency band of 2.5 GHz to 2.7 GHz.
  • a duplexer 32 for a frequency of 2 GHz suppresses an external transmission signal in the frequency band of 1.4 to 1.5 GHz that originates in another mobile phone and enters from the antenna 7 , and prevents a phenomenon in which a disturbing signal in the vicinity of the frequency band of 2.4 GHz to 2.5 GHz generated when a transmission signal at a frequency of 2 GHz is output from the high-frequency amplifier 30 is emitted from the antenna 7 to disturb a reception signal and a transmission signal in the frequency band of 2.4 GHz to 2.5 GHz.
  • the duplexer 32 prevents disturbing a wireless LAN reception signal/transmission signal at a frequency of 2.4 GHz and a reception signal/transmission signal in the frequency band of 2.5 GHz to 2.7 GHz according to the W-CDMA, TD-CDMA, TD-SCDMA or the like.
  • the high-frequency circuit device has an advantage that cost reduction (to one-third to one-fifth) and reduction in power consumption (about 20% decrease) can be achieved and an additional high-frequency amplifier is not required even when a transmission frequency band is newly added, and thus is useful for a W-CDMA mobile phone system using a plurality of frequency bands and a W-CDMA mobile phone using frequency bands of 800 to 900 MHz, 1.4 to 1.5 GHz, 1.6 to 1.8 GHz, 1.9 to 2.0 GHz, and 2.5 to 2.7 GHz.
  • the high-frequency circuit device further is useful for a multifunctional mobile phone composed of a W-CDMA mobile phone as described above to which a wireless LAN function with respect to the frequency band of 2.4 GHz is added.
  • the high-frequency circuit device even further is useful for a mobile phone to which the W-CDMA in the frequency band of 2.5 to 2.7 GHz, TD-CDMA or TD-SCDMA is added.
  • the high-frequency circuit device still further is useful for a CDMA mobile phone using a plurality of frequency bands and a mobile phone shared in the W-CDMA, LAN and CDMA.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Power Engineering (AREA)
  • Animal Husbandry (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
US11/058,853 2004-02-27 2005-02-15 High-frequency circuit device Abandoned US20050191973A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/152,803 US7706835B2 (en) 2004-02-27 2008-05-16 High-frequency circuit device

Applications Claiming Priority (2)

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EP1569353A3 (de) 2008-01-02
KR20060043287A (ko) 2006-05-15
US7706835B2 (en) 2010-04-27
EP1569353A2 (de) 2005-08-31
TW200533096A (en) 2005-10-01
CN1661935A (zh) 2005-08-31
JP3961498B2 (ja) 2007-08-22
JP2005244826A (ja) 2005-09-08

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