US20090056439A1 - Sensor for humidity - Google Patents

Sensor for humidity Download PDF

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Publication number
US20090056439A1
US20090056439A1 US12/281,956 US28195606A US2009056439A1 US 20090056439 A1 US20090056439 A1 US 20090056439A1 US 28195606 A US28195606 A US 28195606A US 2009056439 A1 US2009056439 A1 US 2009056439A1
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Prior art keywords
sensor
moisture
moisture sensitive
temperature
polymer
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US12/281,956
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English (en)
Inventor
Kazuhiro Suzuki
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TOPLAS Engr Co Ltd
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TOPLAS Engr Co Ltd
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Assigned to TOPLAS ENGINEERING CO., LTD. reassignment TOPLAS ENGINEERING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SUZUKI, KAZUHIRO
Publication of US20090056439A1 publication Critical patent/US20090056439A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Definitions

  • the present invention relates to a sensor for humidity in high accuracy, and more specifically to the sensor which principally has the stability in the range of high temperature and high humidity due to figuring out a moisture sensitive mechanism.
  • a demand for even humidity control increases in order to make shipment of plants and products with high quality in maintaining the growing environment of the plant and in managing production lines on a factory.
  • the sensor for moisture is classified to six kinds due to the measurement principle.
  • the two methods are preferable which detect changes of electric resistance or electric capacitance of the moisture sensitive materials taking into account of facility for downsizing sensor element portions, and arithmetic processing for output of the sensor.
  • a moisture sensitive element which has a moisture sensitive film composed principally of polyethersulfon and polysulfon as the moisture sensitive material.
  • this material is lower than celluloseacetatebutyrate and so on, and has a property that difference between moisture sensitive characteristics in moisture absorption process and moisture desorption process is small.
  • Patent literature 1 Official gazette of Japanese published patent (examined) H6-92953.
  • Patent literature 2 Specification of the U.S. Pat. No. 6,938,482.
  • the glass transition temperature is 220° C. at the highest in polyethersulfon and polysulfon for the moisture sensitive material according to the patent literature 1 and in polyphenylsulfon (hereinafter called as PPS) for the moisture sensitive material according to the patent literature 2.
  • PPS polyphenylsulfon
  • both materials are lower in the glass transition temperature, and further, basic properties such as temperature dependency and long term stability in the range of high temperature are not optimized as the moisture sensitive material.
  • the applicant of the present invention has principally been in pursuit of substantial causes on the relationship between the moisture sensitive material and its glass transition temperature in view of higher temperature.
  • an optimal material has been found out, which is provided with basic properties such as the temperature dependency and the long term stability in the range of higher temperature.
  • the object of the present invention is to provide a sensor for humidity which is optimized as the moisture sensitive material in basic properties such as the temperature dependency, the long term stability and the like in the range of higher temperature.
  • the moisture sensitive material for sensing relative humidity, which moisture absorption quantity depends only on relative humidity because, namely, it is impossible to measure humidity correctly in case that the moisture absorption quantity depends on other parameters such as temperature and so on, and necessitates compensation.
  • polymer it is sulfonyl group and carbonyl group that the binding energy between hydrophilic group and water molecule is almost equal to that between water molecules in stability.
  • the unsaturated electron pair of oxygen atom in both groups can be in hydrogen bond with the energy almost equal to the binding energy between water molecules.
  • hydrophilic group is spaced by hydrophobic group.
  • hydrophobic group in which typical one is phenyl group with bulked structure, that is hydrophobic group without side chains and capable of spacing surely between the hydrophilic groups.
  • five membered ring to eight membered ring are preferable.
  • specifically five membered ring to eight membered ring thereof are preferable.
  • the dielectric constant depends greatly on temperature even if it is lower than the glass transition temperature.
  • the dielectric constant is almost constant up to the glass transition temperature that is advantageous.
  • the dielectric constant of absorbed water molecule does not depend on temperature, because the hydrophilic group is spaced by hydrophobic group and then prevents condensation of the water molecule which is bound in rotational movement
  • the senor for moisture of the present invention is provided with a moisture sensitive film formed with polymer in which hydrophilic group binds together through at least one hydrophobic group to other hydrophilic group, the hydrophobic group being composed of multi-membered ring.
  • the hydrophilic group may be sulfonyl group or carbonyl group.
  • the sensor is provided with moisture sensitive film formed with polymer which glass transition temperature is in the range of 240° C. to 500° C.
  • the polymer is characterized in that it includes at least one of unit structures shown by the following formula.
  • a semiconductor device of the present invention is provided with a moisture sensitive film formed with polymer in which hydrophilic group binds together through at least one hydrophobic group to other hydrophilic group, the hydrophobic group being composed of multi-membered ring.
  • the hydrophilic group may be sulfonyl group or carbonyl group.
  • the semiconductor device is provided with moisture sensitive film formed with polymer which glass transition temperature is in the range of 240° C. to 500° C.
  • the multi-membered ring is preferable to be five membered ring to eight membered ring.
  • the semiconductor device may be provided with a temperature sensor attached, and with an output circuit of the sensor attached.
  • the sensor for moisture is provided with a moisture sensitive element comprising moisture sensitive film formed with polymer which glass transition temperature is in the range of 240° C. to 500° C.
  • FIG. 1 is a conceptual diagram based on the first illustrative embodiment of a sensor for humidity due to the present invention.
  • FIG. 2 shows characteristic between relative humidity and electric capacitance based on the first illustrative embodiment of the sensor for moisture due to the present invention when the sensor for moisture is annealed in the temperature range of 220° C. to 380° C.
  • FIG. 3 shows characteristic between relative humidity and electric capacitance based on the first illustrative embodiment of the sensor for moisture due to the present invention when the sensor for moisture is annealed at the temperature of 420° C.
  • FIG. 4 shows characteristic between relative humidity and electric capacitance based on the conventional product PES at the temperature of 30° before and after heat run test.
  • FIG. 5 shows characteristic between relative humidity and electric capacitance based on the conventional product PAS at the temperature of 30° C. before and after heat run test.
  • FIG. 6 shows characteristic between relative humidity and electric capacitance based on the first polysulfon due to the present invention at the temperature of 30° C. before and after heat run test.
  • FIG. 7 shows characteristic between relative humidity and electric capacitance based on the second polysulfon due to the present invention at the temperature of 30° C. before and after heat run test.
  • FIG. 8 is a top plain view of the second illustrative embodiment of the sensor for moisture due to the present invention.
  • FIG. 9 is a longitudinal cross sectional view of the second illustrative embodiment of the sensor for moisture due to the present invention.
  • FIG. 10 shows characteristic between relative humidity and electric capacitance based on the example 4 of the second illustrative embodiment of the sensor for moisture due to the present invention.
  • FIG. 11 is a top plain view of the example 5 of the sensor for moisture due to the present invention.
  • FIG. 12 is an enlarged cross sectional view taken along the line BB′ of the example 5 of the sensor for moisture due to the present invention.
  • FIG. 13 is a top plain view of the example 6 of the sensor for moisture due to the present invention.
  • FIG. 14 is a top plain view of the example 7 of the sensor for moisture due to the present invention.
  • FIG. 1 is a conceptual diagram based on the first illustrative embodiment of a sensor for humidity due to the present invention.
  • numeral 2 is an insulating substrate composed of, for example, sintered alumina, soda glass, silicate glass and the like.
  • Numeral 4 is a lower electrode composed of aluminum, gold, palladium, chromium and the like which are deposited on the insulating substrate 2 .
  • Numeral 6 is a pad for the lower electrode which is formed in one body connecting with the lower electrode 4 at an area portion forming a pad for electrode on the substrate 2 .
  • Numeral 8 is a moisture sensitive film composed of polysulfon (hereinafter called as the first polysulfon) which is polymer resin material and has glass transition temperature at about 260° C., and is represented by the following formula.
  • the polymer resin material is clad so as to cover not only the lower electrode 4 , but also a part of the pad 6 for the lower electrode and further the insulating substrate 2 .
  • numeral 10 is an upper electrode formed on this moisture sensitive film 8 .
  • Numeral 12 is a pad for the upper electrode at the area portion forming a pad for electrode on the moisture sensitive film 8 , which is formed extendedly during the same process with the lower electrode 4
  • Lead wires (not shown) are fastened to the terminal portions of the pad 6 for the lower electrode and the pad 12 for the upper electrode by soldering.
  • the moisture sensitive film 8 is composed principally of moisture sensitive material of the first polysulfon shown at the formula (8).
  • first powder of the first polysulfon is prepare by the weight of 5-30 gram, for example. Then, the prepared power is dissolved into N-methylpirrolidinone (hereinafter represented as NMP), and solution of the first polysulfon is obtained. Then, the solution is coated on the lower electrode 4 formed on the insulating substrate 2 by the spin coat method. In the case the rotational speed of the spinner is in the range of 500 to 9000 rpm. After forming a film, the film is annealed more than one hours at the temperature higher than 260° C. that is the glass transition temperature of the first polysulfon, for the purpose of solvent removal and distortion relaxation in the film, as the result the moisture sensitive film 8 is obtained.
  • NMP N-methylpirrolidinone
  • the upper electrode 10 with the film thickness in the range of 100 nm to 10000 nm is formed on the moisture sensitive film 8 coated with layers on the insulating substrate 2 , by the methods such as vacuum evaporation, sputtering, ion plating and the like.
  • the lower electrode 4 is obtained by forming chromium to a thin film with the thickness of 400 nm to 800 nm using vapor deposition.
  • the polymer compounds shown in the formula (9), (10) have the glass transition temperature of 250° C. and, it is preferable for the solvent to be dimethylformamide (hereinafter called as DMF), dimethylacetamide (hereinafter called as DMAC).
  • DMF dimethylformamide
  • DMAC dimethylacetamide
  • the polymer compound shown in the formula (II) has the glass transition temperature of 400° C. and, it is preferable for the solvent to be phenol at high temperature and NMP.
  • the polymer compounds shown in the formula (12), (13) have the glass transition temperature of 290° C. and, it is preferable for the solvent to be DMF, DMAC.
  • the characteristic between relative humidity and electric capacitance is measured when the annealing temperature is changed to the sensor for moisture which makes use of the first polysulfon thus constituted according to the present invention.
  • the sensor for moisture is annealed for 18 hours at each temperature of 220° C., 260° C., 300° C., 340° C., 380° C. and 420° C., respectively.
  • FIG. 2 shows characteristic between relative humidity and electric capacitance when the sensor for moisture is annealed in the temperature range of 220° C. to 380° C.
  • FIG. 3 shows characteristic between relative humidity and electric capacitance when the sensor for moisture is annealed at the temperature of 420° C.
  • LCZ meter is used to measure electric capacitance wherein the measuring frequency is 2 MHz, temperature of the testing bath is 30° C.
  • hysteresis width is also measured which are 3.0, 2.0, 1.5, 1.5, 1.0, 1.0 and 2.0% in accordance with the annealing temperatures of 220° C., 260° C., 300° C., 340° C., 380° C. and 420° C., respectively.
  • hysteresis width in the sensor for moisture using conventional product of polyethersulfon (hereinafter called as PES) and PPS are measured, which is composed of moisture sensitive film constituted in a similar condition wherein the annealing condition is 100 hours at 260° C. Both of hysteresis width in PES and PPS are 1.0%.
  • the sensor for moisture using the first polysulfon according to the present invention has a small hysteresis equal to PES and PPS, when annealed at the temperatures of 340° C. and 380° C.
  • heat resistance property of the sensor for moisture using the first polysulfon according to the present invention is shown below.
  • the conventional product of PES, PPS, and the first polysulfon according to the present invention are used as the moisture sensitive material wherein PES, PPS are annealed for 100 hours at the temperatures of 260° C., and the first polysulfon according to the present invention is annealed for 18 hours at the temperatures of 380° C.
  • heat run test is executed to those sensors after completion as the sensor for moisture.
  • the condition of the heat run test is to leave the sensors for 240 hours in the atmosphere at the temperature of 200° C.
  • the characteristic between relative humidity and electric capacitance is measured in the atmosphere at the temperature of 30° C. before and after the heat run test.
  • FIG. 4 shows characteristic between relative humidity and electric capacitance of PES at the temperature of 30° C. before and after the heat run test.
  • FIG. 5 shows characteristic between relative humidity and electric capacitance of PPS at the temperature of 30° C. before and after the heat run test.
  • FIG. 6 shows characteristic between relative humidity and electric capacitance of the first polysulfon according to the present invention at the temperature of 30° C. before and after the heat run test.
  • the first polysulfon according to the present invention is 1.6% and PPS is 2.1%, and PES is 9.3%. Accordingly, it is shown that heat resistance property in the first polysulfon according to the present invention is higher than those of PPS and PES.
  • example 3 shows the sensor for moisture using the second polysulfon according to the present invention as shown in the chemical formula below.
  • the manufacturing condition for the second polysulfon is constituted in a similar process to the embodiment 1 except the annealing condition of 18 hours at the temperature of 350° C.
  • FIG. 7 shows characteristic between relative humidity and electric capacitance based on the second polysulfon constituted by that condition at the temperature of 30° C.
  • the percentage of change in electric capacitance to the electric capacitance at humidity of 0% is 40.0%, which is greatly large compared with 18.0% in PES, 10.3% in PPS and 20.3% in the first polysulfon, and shows that noise tolerant property is high.
  • FIG. 8 is a top plain view of the second illustrative embodiment of the sensor for moisture according to the present invention.
  • FIG. 9 is a longitudinal cross sectional view of FIG. 8 .
  • numeral 14 is an insulating substrate composed of, for example, sintered alumina, soda glass, silicate glass and the like.
  • Numeral 16 is a lower electrode composed of aluminum, gold, palladium, chromium and the like which is deposited on the upper surface of the insulating substrate 14 .
  • Numeral 18 is a pad for the lower electrode 16 which is formed adherently by evaporation coating in the area portion forming a pad for electrode on the substrate 14 .
  • Numeral 20 is a moisture sensitive film formed adherently so as to clad not only the lower electrode 16 , but also the insulating substrate 14 .
  • the moisture sensitive film is composed of the first polysulfon having glass transition temperature of 260° C. shown by the following formula.
  • numeral 22 is an upper electrode formed on the moisture sensitive film 20 .
  • Numeral 24 is a pad for the upper electrode 22 formed by evaporation coating in the area portion forming a pad for electrode as in the pad 18 for lower electrode.
  • FIG. 10 shows characteristics between relative humidity and electric capacitance wherein measuring temperature is 30° C.
  • the third illustrative embodiment (hereinafter called as the first semiconductor device) mounted on a semiconductor substrate will be explained, which is a sensor for humidity according to the present invention.
  • FIG. 11 is a top plain view of the first semiconductor device.
  • FIG. 12 is an enlarged cross sectional view taken along the line BB′ of FIG. 12 .
  • wide electrode pads 26 and 28 are located at each end of one pair of electrodes, and the other each end are divided into a plurality of comb-like teeth wherein the respective comb-like teeth portions 34 , 36 for electrodes are placed opposite one after the other with the face to face dimension (d).
  • the moisture sensitive layer 40 with the face to face dimension (d) is formed by filling the moisture sensitive material 38 among the comb-like teeth portions 34 , 36 for electrodes.
  • the upper moisture sensitive film 42 is formed in the upper portion of the comb-like teeth portions 34 , 36 for electrodes to clad them.
  • the moisture sensitive material 38 is filled among the comb-like teeth portions 34 , 36 for electrodes, thereby forming the moisture sensitive layer 40 wherein a longitudinal condenser is formed on the semiconductor substrate 32 , which is formed by the comb-like teeth portion 34 , the moisture sensitive layer 40 and the comb-like teeth portion 36 .
  • this semiconductor device it is possible to employ GaAs, SiC, Ge and the like besides silicon, and other compound semiconductors as the semiconductor substrate 32 .
  • the width of the comb-like teeth portions 34 , 36 for electrodes is defined as “w” in the horizontal direction
  • the height of the upper surface of the comb-like teeth portions 34 , 36 for electrodes from the surface of the semiconductor substrate is defined as “t”
  • the face to face dimension of the opposite comb-like teeth portions 34 , 36 is defined as “d”
  • the thickness from the surface of the semiconductor substrate 32 to the surface of the upper moisture sensitive film 42 is defined as “h”.
  • the width “w” is in the range of 0.05 to 2.5 ⁇ m
  • the height “t” is in the range of 0.02 to 2.5 ⁇ m
  • the face to face dimension “d” is in the range of 0.2 to 2.5 ⁇ m
  • the height “h” is in the range of t+(0.1 to 3.0) ⁇ m.
  • the example 5 is the semiconductor device composed of a simple body of the sensor, which is the sensor for moisture according to the present invention and is mounted on the semiconductor substrate.
  • FIG. 13 is a top plan view of a circuit layout of a semiconductor device in which unlike the example 5, an amplifier circuit or a modulation circuit and the like is located in parallel with the sensor for moisture, wherein the same numeral with that in the example 5 corresponds to the same element with that in the example 5.
  • the numeral 44 designates a sensor output circuit of semiconductor circuit and the like constituted by the oscillation circuit, the modulation circuit, the amplifier circuit and the like which are conventionally used.
  • the pad 46 is connected to the output signals, the electric source and the earth ground. Other constituent elements are not different from those in the example 5. In this way the sensor signals can be output without connecting to circuits outside.
  • the example 7 ( FIG. 14 ) shows a temperature measurement circuit 48 further mounted on the example 5 which is the sensor for moisture according to the present invention and is mounted on the semiconductor substrate.
  • preliminary measured temperature values is stored in a memory of the semiconductor circuit device, and then humidity compensation values is formed in the memory corresponding to each measured temperature.
  • the sensor for moisture according to the present invention is optimized as the moisture sensitive material in basic properties such as the long term stability and the like in the range of higher temperature compared with the conventional sensors.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • General Physics & Mathematics (AREA)
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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
US12/281,956 2006-03-06 2006-11-27 Sensor for humidity Abandoned US20090056439A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006-059620 2006-03-06
JP2006059620A JP5112639B2 (ja) 2006-03-06 2006-03-06 湿度センサ
PCT/JP2006/323598 WO2007102262A1 (fr) 2006-03-06 2006-11-27 CAPTEUR d'humidité

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US (1) US20090056439A1 (fr)
EP (1) EP1992941A4 (fr)
JP (1) JP5112639B2 (fr)
KR (1) KR101316128B1 (fr)
CN (1) CN101438149B (fr)
TW (1) TWI420101B (fr)
WO (1) WO2007102262A1 (fr)

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US20140077824A1 (en) * 2011-06-06 2014-03-20 Denso Corporation Humidity sensor and method of manufacturing the same
US20160299095A1 (en) * 2015-04-09 2016-10-13 Honeywell International Inc. Relative humidity sensor and method
US20170248537A1 (en) * 2016-02-29 2017-08-31 Honeywell International Inc. Relative humidity sensor and method
US10338023B2 (en) * 2013-08-13 2019-07-02 Murata Manufacturing Co., Ltd. Temperature and humidity sensor
US11262325B2 (en) * 2017-05-09 2022-03-01 Sciosense B.V. Sensor semiconductor device

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EP3259581B1 (fr) * 2015-02-17 2020-01-29 Honeywell International Inc. Capteur d'humidité et procédé de fabrication du capteur
CN106950261A (zh) * 2017-03-03 2017-07-14 上海事凡物联网科技有限公司 一种可燃物含水率的测量方法及测量传感器
CN111919111A (zh) * 2018-03-30 2020-11-10 住友化学株式会社 传感器和其制造方法
EP3926336B1 (fr) * 2019-02-15 2025-01-22 National Institute Of Advanced Industrial Science And Technology Matériau composite sensible à l'humidité et capteur d'humidité
CN113075165B (zh) * 2021-03-18 2022-10-18 重庆理工大学 一种u形湿敏光纤传感器及制作方法

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US9239309B2 (en) * 2011-06-06 2016-01-19 Denso Corporation Humidity sensor and method of manufacturing the same
US10338023B2 (en) * 2013-08-13 2019-07-02 Murata Manufacturing Co., Ltd. Temperature and humidity sensor
US20160299095A1 (en) * 2015-04-09 2016-10-13 Honeywell International Inc. Relative humidity sensor and method
US10429333B2 (en) * 2015-04-09 2019-10-01 Honeywell International Inc. Relative humidity sensor and method
US20170248537A1 (en) * 2016-02-29 2017-08-31 Honeywell International Inc. Relative humidity sensor and method
US10634636B2 (en) * 2016-02-29 2020-04-28 Honeywell International Inc. Relative humidity sensor and method
US11262325B2 (en) * 2017-05-09 2022-03-01 Sciosense B.V. Sensor semiconductor device

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TWI420101B (zh) 2013-12-21
KR20080106918A (ko) 2008-12-09
WO2007102262A1 (fr) 2007-09-13
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EP1992941A1 (fr) 2008-11-19
EP1992941A4 (fr) 2016-01-06

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