US3330752A - Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field - Google Patents

Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field Download PDF

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Publication number
US3330752A
US3330752A US422677A US42267764A US3330752A US 3330752 A US3330752 A US 3330752A US 422677 A US422677 A US 422677A US 42267764 A US42267764 A US 42267764A US 3330752 A US3330752 A US 3330752A
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United States
Prior art keywords
article
anode
cathode
magnetic field
chamber
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US422677A
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English (en)
Inventor
Robert L Hallen
Robert M Valletta
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International Business Machines Corp
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International Business Machines Corp
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Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US422677A priority Critical patent/US3330752A/en
Priority to FR42302A priority patent/FR1459625A/fr
Priority to GB53862/65A priority patent/GB1111910A/en
Priority to NL6516538A priority patent/NL6516538A/xx
Priority to SE16874/65A priority patent/SE326354B/xx
Priority to GB12862/67A priority patent/GB1111410A/en
Application granted granted Critical
Publication of US3330752A publication Critical patent/US3330752A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/08—Investigating permeability, pore-volume, or surface area of porous materials
    • G01N15/088—Investigating volume, surface area, size or distribution of pores; Porosimetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Definitions

  • the present invention relates to the deposition of films of material upon articles, and more particularly to an improved apparatus for depositing films by cathode sputtering wherein the coating as deposited is maintained at a relatively low temperature by a magnetic deflection apparatus.
  • the article being coated by cathodic sputtering is conventionally cooled by the use of a cooling jacket having cooling fluid running therethrough.
  • the cooling jacket does help to prevent a rapid rise in the temperature of the article being coated, however, it does not cure the problem and the article over a short period of time will rise to undesirable high temperatures.
  • This relatively uncon trolled temperature rise of the article and the film being deposited results in a deposited film having a variation in chemical and physical properties through its thickness. Further, high temperatures promote unwanted chemical reactions of the material being sputtered with the small residual amounts of oxygen, water vapor and other gases in the sputtering chamber.
  • the cathode sputtering chamber is capable of holding a high vacuum.
  • the article to be coated is positioned between the cathode and anode of the chamber.
  • Suitable means is provided for impressing a voltage across the cathode and anode which acts to establish an electric field betweenthe cathode and anode, and to cathodic sputter particles from the cathode onto the article.
  • a localized magnetic field directly over the surface of the article and at substantially right angles to the electric field between the cathode and anode is generated by a suitable magnetic device. It is this magnetic field that deflects the charged particles away from the surface of the article with the resulting maintenance of the temperature of the article and coating at a relatively low value.
  • FIGURE 1 is a partly sectional view of one form of the apparatus of the present invention.
  • FIGURE 2 is a top view of a horseshoe magnet deflection device
  • FIGURE 3 is a side view of the FIGURE 2 magnetic deflection device showing a suitable means for adjusting the positional relationship between the means for generating a magnetic field and the article to be coated.
  • FIGURE 1 there is shown a cathode sputtering apparatus 10 which is composed basically of a chamber 12 capable of holding a high vacuum, a cathode 14 and an anode 16.
  • the article or substrate 18 to be coated is illustrated as attached to the anode 16.
  • the chamber 12 is constructed of two parts, a bell jar 20 and a plate 22.
  • the vacuum chamber may be constructed of any of the usual materials, such as glass, porcelain, metal and the like.
  • a chamber output port 24 is connected to a suitable vacuum pump (not shown) for removing gases from the chamber.
  • the variable leak gas input tube 25 is connected to a source of gas, such as an inert gas, with which the chamber may be filled prior to the application of a voltage across the cathode and anode to cause cathodic sputtering.
  • the rests 28 and 30 are composed of a suitable material, such as stainless steel.
  • the rods 26 are connected to electrical ground which is the anode electrical connection.
  • the anode of the chamber can be composed of any suitable conductive material, such as aluminum.
  • article or substrate 18 to be coated may be conveniently attached to the anode 16 by any conventional attaching means.
  • the substrate 18 may be positioned in front of the cathode such as by securing the substrate 18 directly to the rods 26.
  • the cathode 14 is composed of the material to be sputtered onto the article 18.
  • the high voltage connection is applied to the cathode.
  • the connection must be electrically insulated from all other parts of the vacuum chamber 12.
  • the cathode 14 is supported on any suitable structure, such as an aluminum plate resting on rests 28 and a quartz plate between the aluminum plate and the cathode 14 to insulate the cathode from the anode.
  • the means 40 for generating a localized magnetic field 42 directly over the surface of the article or substrate 18 and at substantially right angles to the electric field must be a closed flux path magnetic field, such as the horseshoe magnet illustrated in the drawings.
  • the magnetic field 42 that is generated will then not etiect the charged particles moving from the cathode which are not directly over the substrate. Therefore, the result of this type of a magnetic field is to only materially effect the charged particles which would, without the use of the magnetic field, strike the article surface.
  • Any other type of magnet structure, such as an opposed pair of bar magnets of normal length cannot be used to produce the present inventions cooling effect because the fields produced by such magnets are not sufiiciently localized.
  • the bar magnets field pulls toward the substrate as many charged particles as it deflects away from the substrate.
  • bar magnets can be used to produce a localized field between their ends if they are extremely long and their ends are positioned close together.
  • a cooling means 44 is preferably used to cool the means 40 for generating a localized magnetic field.
  • the cooling of means 44 may be in the form of a cooling coil surrounding the means 40 having cooling fluid therein.
  • the cooling means 44 is used to maintain the means 40 at a temperature low enough that its magnetic field strength remains substantially constant during the coating period. The magnetic field is reduced with increased temperature so the magnets cooling effect on the substrate 18 would also be reduced if the magnet itself were not cooled.
  • the horseshoe magnet whether a permanent or electromagnet type, is the preferred means for generating a localized magnetic field 42 directly over the surface of the article.
  • the flux path external to the magnet is solely localized between the magnets poles. The remaining flux path is within the body of the magnet. This is inherent in the horseshoe magnet structure. The external field of the horseshoe magnet, therefore, can be concentrated in the required manner, directly over the substrate, to produce the desired cooling effect.
  • FIGURES 2 and 3 illustrate a means for adjusting the positional relationship between the means 40 for generating a magnetic field and the substrate 18 to be coated.
  • This adjusting technique is effective to vary the cooling effect of the magnetic field on the substrate.
  • a horseshoe magnet 50 which can either be a permanent magnet or an electromagnet is shown in the FIGURE 2 suspended by holding means 52.
  • the substrate 18 to be coated is positioned between the horseshoe magnet 50 pole pieces.
  • the pole pieces are shown to be tapered.
  • the tapered pole piece structure is a preferred means for increasing the intensity of the flux path external to the magnet. In this manner, a high intensity magnetic field can be adjustably located solely over the surface of the article 18.
  • FIGURE 3 illustrates a means for adjusting the positional relationship between the horseshoe magnet 50 and the article 18 to thereby vary the cooling effect of the magnetic field on the article. While it is obvious that either the horseshoe magnet 50 or the article 18 may be moved relative to the other one, it is preferred to hold the horseshoe magnet 50 stationary and move the article 18.
  • One suitable means for adjustably moving the article between the pole pieces of the magnet 50 is the means illustrated in FIGURE 3.
  • This means includes a rack 60 and a pinion 62.
  • the rack is moved by the rotation of the pinion 62.
  • the article 18 is fixed to the end of rack 60.
  • Means 64 are provided for turning the pinion 62 to adjust the position of the article 54 in relation to the pole pieces of the magnet 50 to vary the cooling effect of said magnetic field on the article 18 and the coating being deposited.
  • a wide range of materials can he sputtered cathodically as is well known in the art.
  • the cathodic sputtering chamber can be filled with gases through the gas inlet 25 which react chemically with the metal or nonmetal being cathode sputtered.
  • a compound such as silicon dioxide
  • the apparatus of the present invention is particularly valuable, since by use of the temperature adjusting means a first nonreacted layer may be deposited, followed by depositing a reactive layer in the same chamber simply by changing the temperature of the surface of the article being coated. This surface change increase in temperature could be enough to promote the chemical reaction of the sputtered material with gases in the chamber at the higher temperature but not at the lower temperature.
  • Example 1 The sputtering chamber 10 of FIGURE 1 was used with the exceptions that the means 40 for gene-rating a magnetic field was not used and a cooling jacket was placed on the anode 16. Water was circulated through the cooling jacket, to help cool the anode and the article to be coated.
  • the anode was an aluminum plate.
  • the cathode used was a four-inch diameter silicon wafer.
  • the eifective cathode area was 77 square centimeters.
  • the article coated was a one inch diameter silicon wafer. The spacing between the cathode and the article was threequarters of an inch.
  • the chamber was evacuated to approximately 3 10- mm. of mercury. Pure oxygen was passed into the chamber until the chamber pressure was microns.
  • the sputtering voltage used was 1800 volts D.C. and the current was 350 milliamps. Within a period of less than one minute after the sputtering voltage was applied between the cathode and the anode, the substrate became a bright red color. It was estimated that the temperature was greater than 800 C. Sputtering was discontinued.
  • Example 2 The sputtering chamber 10 of FIGURE 1 was used, including the means 40, but with the exceptions thatthe magnet cooling means 44 was not used and a cooling jacket was placed on the anode 16. Water was circulated through the cooling jacket to help cool the anode and the article to be coated.
  • the anode was an aluminum plate.
  • the cathode used was .a four-inch diameter silicon wafer. The effective cathode area was 77 square centi meters.
  • the article coated was a one inch diameter wafer. The spacing between the cathode and the article was three-quarters of an inch.
  • the chamber was evacuated to approximately 3X10- mm. of mercury. Pure oxygen was passed into the chambers until the pressure was 47 microns.
  • a thermocouple was bonded to the substrate 18.
  • a sputtering voltage of 2000 volts D.C. and a current of 400 milliamps were used.
  • a permanent horseshoe magnet rated at guass was used.
  • Cathodic sputtering was continued for nine minutes after application of the voltage between the cathode and the anode.
  • the resulting silicon dioxide film was 4000 Angstroms in thickness.
  • the coating was continuous and excellent in appearance.
  • the article surface temperature was measured by the thermocouple and is given in the following table as against time in minutes.
  • the invention thus provides an improved apparatus for cathodic sputtering.
  • the addition of the magnetic field generating structure greatly improves the temperature control of the article during the sputtering operation so that increased voltages and increased sputtering times can be used.
  • the magnetic field has no adverse effect on the uncharged particles being sputtered, even when ferromagnetic metals are being sputtered.
  • means are provided to adjust the temperature of the article and the coating being deposited during the sputtering operation to allow further flexibility to what has been a somewhat difficult coating technique.
  • Apparatus for coating an article comprising:
  • Apparatus for coating an article comprising:
  • a closed flux path means for generating a localized magnetic field directly over substantially the entire surface of said article and at substantially right angles to the said electric field whereby the temperature of said article is maintained at a relatively low value
  • Apparatus for coating an article comprising:
  • Apparatus for coating an article comprising:
  • Apparatus for coating an article comprising:
  • pole pieces of the horseshoe magnet are shaped to produce a high intensity external field between said pole pieces.
  • Apparatus for coating an article comprising:
  • said article being mounted on the end of said rack
  • Apparatu for coating an article comprising:
  • a cooling coil surrounding said horseshoe magnet having cooling fluid therein to maintain the said magnet at a temperature low enough that its magnetic field strength remains substantially constant during the coating period
  • said article being mounted on the end of said rack

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Plasma & Fusion (AREA)
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US422677A 1964-12-31 1964-12-31 Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field Expired - Lifetime US3330752A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US422677A US3330752A (en) 1964-12-31 1964-12-31 Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field
FR42302A FR1459625A (fr) 1964-12-31 1965-12-15 Pulvérisation cathodique
GB53862/65A GB1111910A (en) 1964-12-31 1965-12-20 Improvements in or relating to cathode sputtering
NL6516538A NL6516538A (fr) 1964-12-31 1965-12-20
SE16874/65A SE326354B (fr) 1964-12-31 1965-12-29
GB12862/67A GB1111410A (en) 1964-12-31 1967-03-20 Porosity data apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US422677A US3330752A (en) 1964-12-31 1964-12-31 Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field

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US3330752A true US3330752A (en) 1967-07-11

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US422677A Expired - Lifetime US3330752A (en) 1964-12-31 1964-12-31 Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field

Country Status (5)

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US (1) US3330752A (fr)
FR (1) FR1459625A (fr)
GB (2) GB1111910A (fr)
NL (1) NL6516538A (fr)
SE (1) SE326354B (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3889019A (en) * 1969-03-13 1975-06-10 United Aircraft Corp Vapor randomization in vacuum deposition of coatings
US3977955A (en) * 1974-05-10 1976-08-31 Bell Telephone Laboratories, Incorporated Method for cathodic sputtering including suppressing temperature rise
US4013539A (en) * 1973-01-12 1977-03-22 Coulter Information Systems, Inc. Thin film deposition apparatus
US4025410A (en) * 1975-08-25 1977-05-24 Western Electric Company, Inc. Sputtering apparatus and methods using a magnetic field
US4401054A (en) * 1980-05-02 1983-08-30 Nippon Telegraph & Telephone Public Corporation Plasma deposition apparatus
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3030374C2 (de) * 1980-08-11 1983-11-10 Harro Prof. Dr. 5900 Siegen Lentz Quecksilberporosimeter
NL8202092A (nl) * 1982-05-21 1983-12-16 Philips Nv Magnetronkathodesputtersysteem.
CH668565A5 (de) * 1986-06-23 1989-01-13 Balzers Hochvakuum Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz.
JP2673807B2 (ja) * 1987-10-30 1997-11-05 パイオニア株式会社 光磁気記録媒体の製造方法
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
DE4042417C2 (de) * 1990-07-17 1993-11-25 Balzers Hochvakuum Ätz- oder Beschichtungsanlage sowie Verfahren zu ihrem Zünden oder intermittierenden Betreiben
RU2527656C2 (ru) * 2012-07-25 2014-09-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Тамбовский государственный технический университет" ФГБО ВПО ТГТУ Способ измерения пористости частиц сыпучих материалов
CN109470618B (zh) * 2018-11-19 2021-12-17 莆田市荔城区任西贸易有限公司 一种采用磁力转换为负压吸合的混凝土抗渗仪
CN110987759A (zh) * 2019-12-11 2020-04-10 东南大学 一种用气体测试多孔材料孔隙率的装置与方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754259A (en) * 1952-11-29 1956-07-10 Sprague Electric Co Process and apparatus for growing single crystals
US3077444A (en) * 1956-06-13 1963-02-12 Siegfried R Hoh Laminated magnetic materials and methods
US3117065A (en) * 1959-09-02 1964-01-07 Magnetic Film And Tape Company Method and apparatus for making magnetic recording tape
US3133874A (en) * 1960-12-05 1964-05-19 Robert W Morris Production of thin film metallic patterns
US3170810A (en) * 1962-05-24 1965-02-23 Western Electric Co Methods of and apparatus for forming substances on preselected areas of substrates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754259A (en) * 1952-11-29 1956-07-10 Sprague Electric Co Process and apparatus for growing single crystals
US3077444A (en) * 1956-06-13 1963-02-12 Siegfried R Hoh Laminated magnetic materials and methods
US3117065A (en) * 1959-09-02 1964-01-07 Magnetic Film And Tape Company Method and apparatus for making magnetic recording tape
US3133874A (en) * 1960-12-05 1964-05-19 Robert W Morris Production of thin film metallic patterns
US3170810A (en) * 1962-05-24 1965-02-23 Western Electric Co Methods of and apparatus for forming substances on preselected areas of substrates

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3889019A (en) * 1969-03-13 1975-06-10 United Aircraft Corp Vapor randomization in vacuum deposition of coatings
US4013539A (en) * 1973-01-12 1977-03-22 Coulter Information Systems, Inc. Thin film deposition apparatus
US3977955A (en) * 1974-05-10 1976-08-31 Bell Telephone Laboratories, Incorporated Method for cathodic sputtering including suppressing temperature rise
US4025410A (en) * 1975-08-25 1977-05-24 Western Electric Company, Inc. Sputtering apparatus and methods using a magnetic field
US4401054A (en) * 1980-05-02 1983-08-30 Nippon Telegraph & Telephone Public Corporation Plasma deposition apparatus
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source

Also Published As

Publication number Publication date
GB1111410A (en) 1968-04-24
GB1111910A (en) 1968-05-01
SE326354B (fr) 1970-07-20
FR1459625A (fr) 1966-11-18
NL6516538A (fr) 1966-07-04

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