US3336159A - Method for growing single thin film crystals - Google Patents

Method for growing single thin film crystals Download PDF

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Publication number
US3336159A
US3336159A US314541A US31454163A US3336159A US 3336159 A US3336159 A US 3336159A US 314541 A US314541 A US 314541A US 31454163 A US31454163 A US 31454163A US 3336159 A US3336159 A US 3336159A
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US
United States
Prior art keywords
film
substrate
annular
silicon
crystal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US314541A
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English (en)
Inventor
Sidney H Liebson
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NCR Voyix Corp
National Cash Register Co
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NCR Corp
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Publication date
Application filed by NCR Corp filed Critical NCR Corp
Priority to US314541A priority Critical patent/US3336159A/en
Priority to GB24542/64A priority patent/GB998723A/en
Priority to SE10069/64A priority patent/SE301796B/xx
Priority to NL6410493A priority patent/NL6410493A/xx
Priority to CH1284564A priority patent/CH429661A/fr
Priority to BE653856A priority patent/BE653856A/xx
Priority to DEN25630A priority patent/DE1261118B/de
Priority to FR990432A priority patent/FR1410667A/fr
Application granted granted Critical
Publication of US3336159A publication Critical patent/US3336159A/en
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate

Definitions

  • ABSTRACT OF THE DISCLOSURE A method of making a planar single crystal layer by providing a crystalline material layer in which individual crystals of small dimension may be identified, thereafter building a crystal structure in conformity with a chosen crystallite of the layer, by melting and causing the flow of adjacent crystals to make contact with the chosen crystal, followed by moving the zone of melting outwardly, as by the use of electron bombardment.
  • the present invention relates to a method for growing thin film crystals and, more specifically, to a method for growing single thin film crystals of selected material and orientation upon amorphous substrates.
  • Epitaxial growth of crystals does have some limitations. By their nature, crystals prepared by this technique cannot be grown to an arbitrary size, since the size is limited to the maximum size of the crystal substrate which can be produced economically. With current production techniques, the maximum crystal size is approximately four centimeters in diameter. Furthermore, the epitaxial growth technique cannot be applied for the growth of crystals upon amorphous substrates because of the lack of crystalline structure of substrates of this type.
  • Truly three-dimensional circuitry could be prepared by growing additional circuitry over the passivated surfaces of planar integrated circuits if single crystal thin film silicon could be deposited upon an amorphous substrate, in that, currently, these passivated surfaces consist of an amorphous silicon oxide or silicon dioxide layer, which precludes the epitaxial crystal growth technique. Therefore, a technique which provides for the growth of single crystals upon such amorphous substrates would be a considerable advancement in the art, in that the crystal size would be limited only by the size of the substrate.
  • a film of silicon which has been deposited upon an amorphous substrate member by conventional techniques is scanned, by suitable means, as explained more fully hereinafter, to identify crystallites having certain preferred orientations with respect to the substrate, which crystallites, save a selected one, are then ICC melted by an annular movement of an electron beam, the diameter of which is increased while the power density of the beam is altered to maintain a molten zone within the confines of the beam, and the growth is continued by expanding the sweep of the annular beam until the sub strate is completely covered by a single thin film crystal of silicon.
  • the unique method of this invention will be described on the basis of depositing a thin film crystal of silicon upon an amorphous substrate such as -silicon oxide or silicon dioxide. It is to be specifically understood, however, that these materials are exemplary only for the purpose of accurately describing this novel technique and that this technique may be employed with other crystalline materials and substrate members.
  • the film material be of a crystalline nature which may be organic, inorganic, metallic, or semi-conductor materials such as germanium, gallium phosphide, or indium antimonide, for example.
  • an amorphous substrate such as silicon oxide or silicon dioxide is coated with a film of crystalline material such as silicon by conventional techniques well known in the art, such as evaporation, disproportionation reaction, or hydrogen reduction.
  • evaporation, disproportionation reaction, or hydrogen reduction are well known in the art, and any of them are acceptable for depositing the silicon layer upon the amorphous substrate, they will not be described in detail herein.
  • a single crystallite thereof having the desired orientation with respect to the substrate is selected as the seed from which the single crystal will be grown.
  • the individual crystallites of silicon upon the amorphous substrate are randomly oriented relative to the surface thereof.
  • there usually is a preferred crystal orientation for example, a crystal orientation may be eX- pressed by the Miller indices 1:1:1 for a specific application. Other applications may require different crystal orientation.
  • the surface of the substrate is scanned by X-ray or electron diffraction to identify crystallites deposited on the substrate which have certain preferred orientations, as dictated by the desired final result, and one chosen from among them.
  • This heat source may be but is not limited to an electron beam heating apparatus.
  • the electron beam heating apparatus may consist of a simple electron beam gun operating in a vacuum and deflected in a manner to produce a circular sweep, thereby providing a source of heat having an annular pattern. This equipment is commercially available, and the circular sweep deflection techniques are well known in the cathode ray deflection art.
  • the electron beam voltage and current are adjusted to increase the intensity of the source of heat to provide an annular melting of the film about the selected crystallite. Because the beam diameter will in all probability be greater than the film thickness, it is important that these parameters be varied to minimize separating effects of surface tension in the molten film within the annular area and the probabilities of dendritic growth formation within the molten zone.
  • the annular electron beam heating pattern radius is slowly increased, and the power density is simultaneously varied to increase the intensity of the source of heat to maintain the molten zone within the area of the annular electron beam heating pattern.
  • the annular-like beam heating pattern is then constantly expanded, the beam intensity always being made sufficient to bring about melting of the crystalline material Where the beam is incident.
  • the moving beam leaves in its wake a cooling melt path which crystallizes according to the pattern of the seed crystal in abutment thereto. This results in the growth of a single crystal of silicon over the entire surface area of the amorphous substrate member.
  • a method for growing single thin film crystals upon an amorphous substrate comprising the steps of depositing a film of crystalline material upon an amorphous substrate, selecting a crystallite of the film of the desired orientation as the seed from which a single crystal will be grown, centering the selected crystallite within a source of heat having an annular pattern, adjusting the intensity of the source of heat to provide an annular melting of the film about the selected crystallite, and simultaneously increasing the radius of the annular heating pattern and the heating intensity thereof to maintain a molten zone within the area of the annular heating pattern until the entire deposited film upon the substrate has been melted to produce a single crystal of the deposited crystalline material layer over the entire surface of the substrate.
  • a method for growing single thin film crystals upon an amorphous substrate comprising the steps of depositing a film of silicon upon an amorphous substrate, selecting a crystallite of the film of the desired orientation as the seed from which a single silicon crystal will be grown, centering the selected crystallite within a source of heat having an annular pattern, adjusting the intensity of the source of heat to provide an annular melting of the silicon film about the selected crystallite, and simultaneously increasing the radius of the annular heating pattern and the heating intensity thereof to maintain a molten zone within the area of the annular heating pattern until the entire deposited silicon film upon the substrate has been melted to produce a single silicon crystal over the entire surface of the substrate.
  • a method for growing single thin film crystals upon an amorphous substrate comprising the steps of depositing a film of crystalline material upon an amorphous substrate, selecting a crystallite of the film of the desired orientation as the seed from which a single crystal will be grown, centering the selected crystallite within a source of heat comprising an electron beam deflected to produce an annular heating pattern, adjusting the intensity of the electron beam annular heating pattern to provide an annular melting of the film about the selected crystallite, and simultaneously increasing the radius of the electron beam annular heating pattern and the heating intensity thereof to maintain a molten zone within the area of the electron beam annular heating pattern until the entire de posited film upon the substrate has been melted to produce a single crystal of the deposited crystalline material layer over the entire surface of the substrate.
  • a method for growing single thin film crystals upon an amorphous substrate comprising the steps of depositing a film of silicon upon an amorphous substrate, selecting a crystallite of the film of the desired orientation as the seed from which a single silicon crystal will be grown, centering the selected crystallite within a source of heat comprising an electron beam deflected to produce an annular heating pattern, adjusting the intensity of the electron beam annular heating pattern to provide an annular melting of the silicon film about the selected crystallite, and simultaneously increasing the radius of the electron beam annular heating pattern and the heating intensity thereof to maintain a molten zone within the area of the electron beam annular heating pattern until the entire deposited silicon film upon the substrate has been melted to produce a single silicon crystal over the entire surface of the substrate.
  • a method of making a planar single crystal layer from crystalline material susceptible to melting by electron beam bombardment comprising the steps of (a) disposing on a heat-resistant substrate a layer of selected crystalline material of the same composition in which individual crystals of small dimension may be identified;

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US314541A 1963-10-07 1963-10-07 Method for growing single thin film crystals Expired - Lifetime US3336159A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US314541A US3336159A (en) 1963-10-07 1963-10-07 Method for growing single thin film crystals
GB24542/64A GB998723A (en) 1963-10-07 1964-06-12 Method for growing single thin film crystals upon amorphous substrates
SE10069/64A SE301796B (fr) 1963-10-07 1964-08-20
NL6410493A NL6410493A (fr) 1963-10-07 1964-09-09
CH1284564A CH429661A (fr) 1963-10-07 1964-10-01 Procédé pour faire croître des cristaux simples pelliculaires sur des substrats amorphes
BE653856A BE653856A (fr) 1963-10-07 1964-10-02
DEN25630A DE1261118B (de) 1963-10-07 1964-10-03 Verfahren zum Zuechten einer duennen einkristallinen Schicht auf einem amorphen Traeger
FR990432A FR1410667A (fr) 1963-10-07 1964-10-06 Procédé pour développer la croissance de cristaux simples pelliculaires minces sur des substrats amorphes

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Application Number Priority Date Filing Date Title
US314541A US3336159A (en) 1963-10-07 1963-10-07 Method for growing single thin film crystals

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US3336159A true US3336159A (en) 1967-08-15

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US314541A Expired - Lifetime US3336159A (en) 1963-10-07 1963-10-07 Method for growing single thin film crystals

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US (1) US3336159A (fr)
BE (1) BE653856A (fr)
CH (1) CH429661A (fr)
DE (1) DE1261118B (fr)
GB (1) GB998723A (fr)
NL (1) NL6410493A (fr)
SE (1) SE301796B (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514323A (en) * 1965-04-20 1970-05-26 Noranda Mines Ltd Epitaxial selenium coating on tellurium substrate
US3658569A (en) * 1969-11-13 1972-04-25 Nasa Selective nickel deposition
US3773499A (en) * 1968-04-03 1973-11-20 M Melnikov Method of zonal melting of materials
US3997313A (en) * 1974-08-06 1976-12-14 International Standard Electric Corporation Method for making oxide glasses
EP0191505A3 (fr) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Méthode de fabrication de feuilles en matériau cristallin
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5588994A (en) * 1980-04-10 1996-12-31 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US9356171B2 (en) 2012-01-25 2016-05-31 The Trustees Of Dartmouth College Method of forming single-crystal semiconductor layers and photovaltaic cell thereon

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL188550C (nl) * 1981-07-02 1992-07-16 Suwa Seikosha Kk Werkwijze voor het vervaardigen van een halfgeleidersubstraat.
US4549913A (en) * 1984-01-27 1985-10-29 Sony Corporation Wafer construction for making single-crystal semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2816050A (en) * 1953-12-18 1957-12-10 Ibm Method of forming monocrystals
US2926075A (en) * 1958-03-05 1960-02-23 Bell Telephone Labor Inc Continuous zone refining using cross-flow
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
US2992903A (en) * 1957-10-30 1961-07-18 Imber Oscar Apparatus for growing thin crystals
US3160522A (en) * 1960-11-30 1964-12-08 Siemens Ag Method for producting monocrystalline semiconductor layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1029939B (de) 1955-06-27 1958-05-14 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Halbleitersystemen
FR1321165A (fr) * 1961-05-09 1963-03-15 Zeiss Carl Procédé de préparation de monocristaux, en particulier de matière semi-conductrice

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816050A (en) * 1953-12-18 1957-12-10 Ibm Method of forming monocrystals
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
US2992903A (en) * 1957-10-30 1961-07-18 Imber Oscar Apparatus for growing thin crystals
US2926075A (en) * 1958-03-05 1960-02-23 Bell Telephone Labor Inc Continuous zone refining using cross-flow
US3160522A (en) * 1960-11-30 1964-12-08 Siemens Ag Method for producting monocrystalline semiconductor layers

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514323A (en) * 1965-04-20 1970-05-26 Noranda Mines Ltd Epitaxial selenium coating on tellurium substrate
US3773499A (en) * 1968-04-03 1973-11-20 M Melnikov Method of zonal melting of materials
US3658569A (en) * 1969-11-13 1972-04-25 Nasa Selective nickel deposition
US3997313A (en) * 1974-08-06 1976-12-14 International Standard Electric Corporation Method for making oxide glasses
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
EP0191505A3 (fr) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Méthode de fabrication de feuilles en matériau cristallin
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5549747A (en) * 1980-04-10 1996-08-27 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5588994A (en) * 1980-04-10 1996-12-31 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5676752A (en) * 1980-04-10 1997-10-14 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US9356171B2 (en) 2012-01-25 2016-05-31 The Trustees Of Dartmouth College Method of forming single-crystal semiconductor layers and photovaltaic cell thereon

Also Published As

Publication number Publication date
NL6410493A (fr) 1965-04-08
CH429661A (fr) 1967-02-15
GB998723A (en) 1965-07-21
BE653856A (fr) 1965-02-01
SE301796B (fr) 1968-06-24
DE1261118B (de) 1968-02-15

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