US3621213A - Programmed digital-computer-controlled system for automatic growth of semiconductor crystals - Google Patents

Programmed digital-computer-controlled system for automatic growth of semiconductor crystals Download PDF

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US3621213A
US3621213A US880273A US3621213DA US3621213A US 3621213 A US3621213 A US 3621213A US 880273 A US880273 A US 880273A US 3621213D A US3621213D A US 3621213DA US 3621213 A US3621213 A US 3621213A
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crystal
computer
crucible
melt
diameter
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Dian P Jen
Richard A Slocum
Carl R Valentino
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International Business Machines Corp
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International Business Machines Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Definitions

  • the Czochralski technique is a method of growing single crystals, oriented in a specified crystallographic direction, from a mass of molten raw materials. To achieve the desired electrical characteristics for the crystal, a predetermined amount of an impurity element, called dopant, is introduced into the melt. A seed of single crystal oriented in the desired crystallographic direction is then inserted into the melt and allowed to propagate by careful adjustment of the growth conditions including melt temperature, crystal lift rate, crucible lift rate, crystal rotation rate,'crucible rotation rate and gas flow rate.
  • Modifications of the crystal growth parameters cause variations in the resultant product.
  • crystal diameter can be varied by changes in the temperature of the melt or by changes of the growth rate.
  • Crystal resistivity can also be altered by changes of temperature or growth rates, while variation of the radial resistivity can be realized by change of the crystal and crucible rotation parameters.
  • crystal diameter is sensed, for example, by an optical pyrometer, each time that the growing crystal is rotated to a predetermined angular position.
  • the diameter pyrometer readings are curve fitted and extrapolated to predict the crystal diameter at a projected time.
  • a second optical pyrometer continuously measures the temperature of the melt in the crucible.
  • the melt temperature pyrometer reading is modified by an equation which takesinto account the continuous change in furnace thermal characteristics caused by crucible lift ,and melt depletion.
  • the modified melt temperature reading is theoretically correct but suffers from error to the extent that uncontrolled thermal instabilities are present which I affect crystal diameter. Accordingly, the present invention provides for a correction factor using the extrapolated crystal diameter previously mentioned.
  • the resulting corrected melt temperature is compared with the actual measured melt temperature pyrometer reading and the power input to the crucible heater is adjusted if a difference between the corrected melt temperature and the actual melt temperature is indicated.
  • Crystal lift (pull) control is accomplished in a somewhat similar manner.
  • a predetermined nominal crystal lift speed term is mathematicallymodified utilizing extrapolated crystal diameter values to yield a corrected lift speed term.
  • the corrected lift speed term then is compared to actual measured crystal lift speed to provide closed-loop servocontrol of the crystal lift motor.
  • the aforementioned crystal-growing process parameters are controlled by a specially programmed general purpose online digital computer.
  • FIG. I is a simplified schematic representation of the spe cially programmed digital computer control system and the crystal puller utilized in the preferred embodiment of the present invention
  • FIG. 2 is a simplified sketch of atypical crystal grown in accordance with the present invention.
  • FIGS. 3, 4 and 5 together comprise a high-level flow chart representation of the computer program utilized in the embodiment of FIG. 1.
  • the Czochralski method is used for growing single-structured crystals from a silicon melt.
  • a silicon charge of 1,000 grams is melted in a Quartz crucible in a furnace and maintained at a temperature slightly above l,400 C.
  • An airtight cylindrical chamber and a crystal lift mechanism are integrally mounted on the furnace.
  • a small single crystal seed is lowered in the chamber, dipped into the surface of the melt, and then slowly withdrawn.
  • the melt solidifies on the seed as it is withdrawn, creating a single crystal.
  • the seed crystal and the crucible are rotated while the crystal is being pulled.
  • the rotation stirs the melt effectively and eliminates undesired temperature gradients which result in asymmetrical crystal growth. Stirring also increases the homogeneity of the silicon dopant mixture which improves the electrical characteristics of the crystal.
  • the crucible elevation is adjustable. Withdrawal of the crystal reduces the remaining melt volume and lowers the solid-liquid interface level. In order 'to maintain the interface level in the center of the isothermal region of the heater, the crucible is slowly adjusted upward to compensate for the lowering of the interface level. Thus, the crucible is raised continuously in relation to the fixed position of the heater.
  • FIG. I The basic components of the conventional Czochralski crystal puller just described are shown in FIG. I. Seed 1 is lifted and rotated relative to melt 2 by shaft 3.
  • Crucible 4 which contains melt 2 is lifted and rotated by hollow shaft 5.
  • Shaft 3 is lifted and rotated by motors 6 and 7, respectively.
  • Shaft 5 is similarly controlled by motors 8 and 9.
  • a partially grown crystal 10 is shown between seed 1 and the surface of melt 2.
  • the temperature of melt 2 is in part controlled by heater ll.
  • certain process parameter values are predetermined (preset by the operator) while others are measured during the actual growing process.
  • Predetermined values preset by the operator include the desired crystal diameter, the type of crystal to be grown, the weight of the silicon charge in the crucible, the
  • the parameter values which are measured during the actual growth of the crystal include seed lift and rotation, crucible lift and rotation, the diameter of the growing crystal, and the temperature of the melt in the crucible.
  • the crystal-growing process parameters which are controlled by the computer in real time include seed lift and rotation, crucible lift and rotation, and melt temperature.
  • computer control system I2 receives signals on lines 13 through 18, inclusive, representing real time measured values of seed rotation, seed lift, crystal diameter, crucible rotation, crucible lift, and melt temperature, respectively.
  • Computer control system 12 in turn, provides real time control signals on lines 19 through 23, inclusive, for determining crystal rotation, crystal lift, crucible rotation, crucible lift, and heater power, respectively.
  • a viewing port 24 is provided in the side of the crystalgrowing chamber 25 for operator observation of melt 2.
  • Computer control system 12 preferably is a conventional programmable process control digital computer such as, for example. the IBM l7l0 or 1800 process control computer.
  • Computer control system 12 also includes the usual conventional interface instrumentation for gathering information on the crystal-growing process parameters in the form of electrical analog signals from the motor tachometers 26 through 29, inclusive, and from radiation sensor 30 which senses the temperature of the melt 2 at the bottom of crucible 4 via the ho]- low shaft 5. Analog to digital converters transform the analog signals into equivalent digital representations.
  • Computer control system 12 further includes units for controlling the speeds of motors 6 through 9, inclusive, and a magnetic amplifier for driving furnace heater 11.
  • a manual data entry unit within control system 12 allows for the insertion of data by the operator at the start of the growing process as will be described later.
  • melt temperature control is based in part upon a first mathematical model describing the heat energy flow into and out of an idealized crystal puller (having no uncontrolled crystal-growing process variables) and in part upon a second mathematical model which compensates the idealized model for the uncontrolled parameters which are unavoidably present in the physically realizable system. It has been found that optimum results are not achieved using either the idealized model or the compensating model alone for controlling the process variables.
  • the crystal-growing process customarily is divided into four main portions. Starting with a small single crystal seed which is dipped into the melt and then slowly withdrawn to allow the melt to solidify on the seed as it is withdrawn, the crystal growth conditions are adjusted to produce the neck-in, roundover, main body, and sprout portions of the crystal as presented in FlG. 2.
  • the seed diameter is first reduced and then increased in order to assure dislocation-free growth as is well understood in the art.
  • Heater power is first increased and then decreased to produce the decreasing and increasing portions, respectively, of the growing crystal. The amount of heat change is precalculated and stored in the computer and is dividedled out in terms of incremental power changes at predetermined process time increments. All other controlled process variables are maintained constant. There is no process parameter feedback to the computer during the neck-in phase.
  • round-over starts as soon as the signal on line 15 of FIG. 1 indicates that the growing crystal is approaching the desired diameter. Round-over is accomplished by incrementing the crystal lift speed and the crucible lift speed gradually to their respective main body growth values while heater power input is increased to stop the expansion of the crystal diameter.
  • Crystal rotation and crucible rotation preferably are maintained constant but it is necessary to vary the crucible lift speed to maintain the solid-liquid interface level of the melt at the same location relative to heater ll of FIG. 1 despite the loss of the melt as the growing crystal solidifies.
  • Crucible lift speed control is based upon the predetermined nominal crystal pull speed value and a computation of the melt depletion at successive process time increments as the crystal is growing. Provision is made for modifying the computation depending on whether the surface of the melt is within the cylindrical portion of the crucible or has been lowered to the curved portion at the bottom of the crucible.
  • the sprout portion of the crystal is formed when the supply of the melt is nearing exhaustion by maintaining a nominal pull speed while gradually reducing crucible lift speed to zero, gradually reducing crystal rotation to half its value during the main body growth phase and by gradually increasing heater power input at a predetermined rate.
  • the required compensation should be based upon a forward projection in time in order to allow for the very substantial thermal lag in the crystal puller between the time that heater power is adjusted and the time that the temperature of the melt responds to the adjustment.
  • the idealized heat increment term is compensated in accordance with the following ARI adjusted mine alrequlred Increment cleaner 8') rrmlinu mar.) AR required increment of sensor 30 reading calculated by equation l) I projected reading of sensor 31 I reference reading of sensor 31 (preselected at a point of high sensitivity to changes in temperature) I reading of sensior 31 during the current process time interval Irv reading of sensor 31 during the immediately preceding process time interval f] proportional factor 0.02 (typical value) f, damping factor 0.06 (typical value) f, scale factor 0.20 (typical value)
  • the thermal lag problem is further reduced by adjusting crystal pull speed in addition .to the above-described heater power adjustment to achieve the fastest crystal diameter response to a given computer command.
  • a nominal pull speed is selected by the computer from a stored table of values at the start of the computer-controlled growing process based upon crystal type and desired diameter data supplied by the operator.
  • the speed nominal value is based upon an idealized crystal-growing system in which there are no uncontrolled variables.
  • the nominal pull speed is a constant value that is predetermined and stored in the computer memory. As in the case of the heater power adjustment, however, it is necessary to compensate the nominal pull speed term for growth process instabilities affecting the diameter of the growing crystal.
  • the nominal value of the pull speed is adjusted in accordance with the following equation:
  • FIGS. 3, 4 and 5 A preferred program for instrumenting said digital computer in accordance with the present invention represented in the high-level flow chart of FIGS. 3, 4 and 5.
  • the flow chart comprises a number of functional blocks and decisional blocks representing respective computer operations.
  • Standard programming techniques, forming'no part of the present invention can be employed to reduce the highlevel flow chart of FIGS. 3, 4 and 5 into equivalent machine language instructions in a known manner. It will be recognized, of course, that only the process-oriented portion ofthe overall program is represented by FIGS. 3, 4 and 5.
  • the customary system software including machine control, housekeeping, job-organizing, program-loading, and language-translating programs. Such system software is well known and is not required for an understanding of the present invention.
  • Block 32 of FIG. 3 represents the data input provided to the computer by the operator, namely crystal type and diameter.
  • Blocks 33 and 34 represent the computer initialization program during which the computer accesses (block 33) a data table and selects nominal values for crystal pull speed, crystal rotation speed and crucible rotation speed corresponding in a predetermined manner to the crystal type and diameter selected by the operator in block 32.
  • the computer next accesses (block 34) a second data table and selects empirically determined heat control and speed control constants utilized in the neck-in and round-over phases of the crystal growing process. All of the selected data is transferred to the communication area of the computer memory for ready access when needed for subsequent computations. At this point, the computer-controlled crystal-growing process is ready to begin upon the initiation of an operator signal indicating that the melt is at the proper temperature.
  • the computer When the operator pushes the start button (block 36), the computer automatically senses and records the temperature represented by the output signal from radiation sensor 30 of FIG. 1 at that time. At the same time, the seed is withdrawn from the melt at a predetermined rate. For example, the seedpulling rate may be increased from 0 to 2.7 inches per hour. At preset process time intervals, e.g. every l8 seconds, the computer generates new set points for heater power control and for crystal and crucible lift and rotation control. Block 37 of FIG. 3 represents that portion of the computer program which measures oh and keeps track of the computer process time increments.
  • the computer accesses(bl0ck 38) the memory location at which the signals from radiation sensor 31 are stored. It is important that the signals from sensor 31 (representing the diameter of the rotating crystal 10) be stored only at those times when the rotating crystal assumes a predetermined angular position. This can be readily accomplished by providing a simple cam-actuated switch (not shown) which samples the signals on line 15 from sensor 31 each time that rotating shaft 3 reaches a predetermined angle. Provision is made for interrupting the computer process irrespective of the computations then underway each time that the switch is actuated.
  • the process interrupt reading and storage of the crystal diameter data represented by the signal from optical sensor 31 is represented by block 39 of F 1G. 3.
  • m digital output to heater m, a digital reference power value for heat furnace control. It is a function of the heater element in use and its range typically is 400 to 600 units K rate factor 2.5 (typical value) K power factor 4.0 (typical value) K base adjustment factor 0.3 (has the sign of the term V nth reading of sensor 30 S value of set point at V,
  • the accumulated crystal length is calculated (block 58) and is compared (block 56) with the maximum length of the crystal that can be pulled from the known amount of silicon charge originally placed in the crucible. 1f the comparison indicates that the crystal has reached its maximum length, a yes output from decision block 56 activates block 57 to execute the sprout or withdrawal phase. This is done by incrementing the heater power to increase the melt temperature and prevent the crystal from freezing on the crucible, by gradually restoring the crystal pull speed to its preset nominal value, and by gradually decreasing the crucible rotation speed while incrementally reducing crucible lift speed to zero.
  • I I and I are defined as in equation (2)
  • the above equation takes the last two readings from sensor 31 (in a typical case successive readings are taken at l8-second intervals) and linearly projects said two readings to a predetermined future time (for example 36 seconds after the second reading).
  • the linear projection is a simple case of curve-fitting sampled data to determine the data trend. Linear projection has been found to be adequate. More complex nonlinear functions may be used, if desired.
  • the computed-projected diameter reading is stored in the computer memory for later use.
  • the computer program next calls for the calculation (blocks 46 and 47 of FIG. 4) of an incremental power change to heater ll of FIG. 1 base upon the idealized equation (I) and compensating equation (2) previously described which is added (block 48) to the last heater power set point to provide a new heater power set point.
  • the updated heater power set point then is stored in computer memory for accessing at a later time.
  • D crucible diameter (inches)
  • the calculated new crucible lift speed set point is stored in computer memory for subsequent use. It should be noted that the amount of the melt drop is calculated base upon the known original silicon chargein the crucible before the growth process was started, the known nominal crystal pull rate, and the known elapsed time from the initiation of the growth process.
  • the set points for crystal and crucible rotation typically are fixed values and do not themselves require separate computation.
  • the set points for crystal lift and crucible lift rates were established in blocks 49 and either block 52 or 53.
  • the calculated digital outputs are sent to the corresponding motor controllers via respective digital-to-analog converters.
  • new values representing each of the crystal-growing process variables are sensed and stored (block 55) in the computer memory including heater temperature, crystal pull speed, crystal rotation speed, crucible lift speed, and crucible rotation speed.
  • One new cycle of the program loop then is initiated by entrance into block 37 of FIG. 3.

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  • Crystallography & Structural Chemistry (AREA)
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  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US880273A 1969-11-26 1969-11-26 Programmed digital-computer-controlled system for automatic growth of semiconductor crystals Expired - Lifetime US3621213A (en)

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Cited By (38)

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US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
US3805044A (en) * 1971-04-07 1974-04-16 Western Electric Co Computerized process control system for the growth of synthetic quartz crystals
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US3880984A (en) * 1971-07-28 1975-04-29 Hitachi Ltd Method of producing plate single-crystal of gadolinium molybdate
US3882319A (en) * 1973-10-23 1975-05-06 Motorola Inc Automatic melt level control for growth of semiconductor crystals
DE2516197A1 (de) * 1975-04-14 1976-10-28 Alusuisse Waegevorrichtung insbesondere zur automatischen regelung von kristallzuchtvorgaengen
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
US4008387A (en) * 1974-03-29 1977-02-15 National Research Development Corporation Automatically controlled crystal growth
US4025386A (en) * 1974-12-20 1977-05-24 Union Carbide Corporation Method for producing r-plane single crystal alpha alumina in massive form having substantially circular cross-section
US4032389A (en) * 1974-03-29 1977-06-28 National Research Development Corporation Apparatus for automatically controlling crystal growth
US4058429A (en) * 1975-12-04 1977-11-15 Westinghouse Electric Corporation Infrared temperature control of Czochralski crystal growth
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
US4135204A (en) * 1977-06-09 1979-01-16 Chesebrough-Pond's Inc. Automatic glass blowing apparatus and method
US4207293A (en) * 1974-06-14 1980-06-10 Varian Associates, Inc. Circumferential error signal apparatus for crystal rod pulling
US4258003A (en) * 1974-04-03 1981-03-24 National Research Development Corporation Automatic control of crystal growth
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
US4350557A (en) * 1974-06-14 1982-09-21 Ferrofluidics Corporation Method for circumferential dimension measuring and control in crystal rod pulling
US4417943A (en) * 1980-06-26 1983-11-29 International Business Machines Corporation Method for controlling the oxygen level of silicon rods pulled according to the Czochralski technique
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
US4660149A (en) * 1983-10-19 1987-04-21 Societe Crismatec Control process for a monocrystal pulling machine
US4832922A (en) * 1984-08-31 1989-05-23 Gakei Electric Works Co., Ltd. Single crystal growing method and apparatus
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DE19603136A1 (de) * 1995-02-27 1996-08-29 Mitsubishi Material Silicon Silicium-Einkristallblock und Verfahren zur Herstellung desselben
US5656058A (en) * 1994-11-14 1997-08-12 Lucent Technologies Inc. Apparatus for inserting a core fiber into a partially molten cladding glass to form an optical fiber preform
US5779790A (en) * 1996-03-15 1998-07-14 Shin-Etsu Handotai Co., Ltd. Method of manufacturing a silicon monocrystal
US5868831A (en) * 1996-06-27 1999-02-09 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Process for controlling the growth of a crystal
US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
US6136090A (en) * 1998-02-13 2000-10-24 Shin-Etsu Handotai Co., Ltd. Method for producing a silicon single crystal
US6283379B1 (en) 2000-02-14 2001-09-04 Kic Thermal Profiling Method for correlating processor and part temperatures using an air temperature sensor for a conveyorized thermal processor
US6294017B1 (en) * 1987-06-30 2001-09-25 The National Research Development Corporation Growth of semiconductor single crystals
US6453219B1 (en) 1999-09-23 2002-09-17 Kic Thermal Profiling Method and apparatus for controlling temperature response of a part in a conveyorized thermal processor
US6470239B1 (en) 1999-09-23 2002-10-22 Kic Thermal Profiling Method for maximizing throughput of a part in a conveyorized thermal processor
US6726764B2 (en) 2000-02-01 2004-04-27 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
US20160258684A1 (en) * 2011-08-26 2016-09-08 Consarc Corporation Purification of a metalloid by consumable electrode vacuum arc remelt process
US11414778B2 (en) 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot
CN120537029A (zh) * 2025-06-20 2025-08-26 昆明理工大学 单晶硅生长炉及其控制方法

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USRE34375E (en) * 1987-05-05 1993-09-14 Mobil Solar Energy Corporation System for controlling apparatus for growing tubular crystalline bodies
JPH06102590B2 (ja) * 1990-02-28 1994-12-14 信越半導体株式会社 Ｃｚ法による単結晶ネック部育成自動制御方法
JPH0717475B2 (ja) * 1991-02-14 1995-03-01 信越半導体株式会社 単結晶ネック部育成自動制御方法
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Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805044A (en) * 1971-04-07 1974-04-16 Western Electric Co Computerized process control system for the growth of synthetic quartz crystals
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
US3880984A (en) * 1971-07-28 1975-04-29 Hitachi Ltd Method of producing plate single-crystal of gadolinium molybdate
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US3882319A (en) * 1973-10-23 1975-05-06 Motorola Inc Automatic melt level control for growth of semiconductor crystals
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
US4032389A (en) * 1974-03-29 1977-06-28 National Research Development Corporation Apparatus for automatically controlling crystal growth
US4008387A (en) * 1974-03-29 1977-02-15 National Research Development Corporation Automatically controlled crystal growth
US4258003A (en) * 1974-04-03 1981-03-24 National Research Development Corporation Automatic control of crystal growth
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CA935743A (en) 1973-10-23
DE2047198B2 (de) 1973-09-13
GB1311558A (en) 1973-03-28
FR2071788A5 (de) 1971-09-17
DE2047198A1 (de) 1971-07-29

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