US4476154A - Method of manufacturing a glass passivation semiconductor device - Google Patents

Method of manufacturing a glass passivation semiconductor device Download PDF

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Publication number
US4476154A
US4476154A US06/373,731 US37373182A US4476154A US 4476154 A US4476154 A US 4476154A US 37373182 A US37373182 A US 37373182A US 4476154 A US4476154 A US 4476154A
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United States
Prior art keywords
laser beams
protective material
glass
glass protective
semiconductor wafer
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Expired - Fee Related
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US06/373,731
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English (en)
Inventor
Susumu Iesaka
Shigenori Yakushizi
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Toshiba Corp
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Tokyo Shibaura Electric Co Ltd
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Assigned to TOKYO SHIBAURA DENKI KABUSHIKI KAISHA, 72 HORIKAWA-CHO, SAIWAI-KU, KAWASAKI-SHI, JAPAN, A CORP. OF JAPAN reassignment TOKYO SHIBAURA DENKI KABUSHIKI KAISHA, 72 HORIKAWA-CHO, SAIWAI-KU, KAWASAKI-SHI, JAPAN, A CORP. OF JAPAN ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: IESAKA, SUSUMU, YAKUSHIZI, SHIGENORI
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body

Definitions

  • This invention relates to a method of manufacturing a glass passivation semiconductor device including the step of depositing a glass passivation layer on the surface of a semiconductor junction by applying laser beams.
  • glass is used as a protective layer instead of silicon rubber in order to assure the electric stability of the surface of a semiconductor junction of a semiconductor device.
  • This glass protective layer is prepared, for example, from borosilicate glass. Such glass protective layer prevents the seeping of water or the permeation of a harmful impurity, for example, Na ion.
  • metal electrodes 18 and a metal electrode 20 are respectively mounted on opposite sides of a silicon wafer 10 formed of, for example, a P + layer 12, N - layer 14 and N + layer 16.
  • the metal electrodes 18 are applied as diode cathodes, and the metal electrode 20 as a diode anode.
  • the wafer 10 is later subjected to mesa etching to provide mesa grooves 22, each of which is filled with a powdery mixture 24 of various vitreous oxides. Later, laser beams are locally irradiated only on the proximity of the mesa grooves 22 having a width of 300 to 500 microns, thereby forming a glass passivation layer.
  • laser beams are emitted from a CO 2 gas laser.
  • the laser beams are irradiated on a wafer 10 placed on a heating board 28 at 300° to 500° C. in an inert atmosphere, for example, N 2 gas.
  • Laser beams scan the lattice-shaped mesa grooves 22 formed in the wafer 10.
  • the annealing process based on the application of laser beams has drawbacks. If a large amount of radiation from CO 2 gas laser beams is applied, the glass material is overheated to a red hot state; on the other hand, the CO 2 gas laser beams permeate a silicon semiconductor substrate, preventing its temperature from rising; therefore, the glass does not wet to the semiconductor substrate, but shrinks and peels off.
  • the process of depositing a glass passivation layer by applying laser beams is already disclosed in a Japanese patent publication No. 55-36,184 and a Japanese laid-open patent application No. 51-151,071.
  • the Japanese laid-open patent application sets forth a process of applying a single kind of laser beams.
  • the Japanese patent publication No. 55-36,184 indicates a process of applying two kinds of laser beams. In the latter process, one kind of laser beams is used to bake a glass material and the other kind of laser beams is applied in scribing the semiconductor substrate.
  • this invention provides a method which comprises the step of simultaneously irradiating first laser beams substantially absorbed in glass and second laser beams substantially absorbed in a semiconductor substrate on that part of the semiconductor substrate on which a glass protective material is deposited, thereby forming a glass passivation layer.
  • first laser beams heat the glass material
  • second laser beams heat a semiconductor substrate, thereby assuring the good wetting of the glass material to the semiconductor substrate.
  • FIG. 1 is a cross sectional view of a semiconductor wafer, illustrating the conventional method of manufacturing a glass passivation semiconductor device
  • FIG. 2 is an oblique view of a semiconductor wafer which is provided with lattice-shaped mesa grooves, illustrating the manner in which the conventional laser beams are irradiated on the mesa grooves;
  • FIGS. 3A to 3D are the cross sectional views of a semiconductor wafer, illustrating the sequential steps of manufacturing a glass passivation semiconductor device embodying this invention.
  • FIG. 4 is an oblique view of a semiconductor wafer which is provided with lattice-shaped mesa grooves, illustrating the manner in which laser beams are irradiated on the mesa grooves in accordance with the method of the invention.
  • FIGS. 3A to 3D and FIG. 4 Description is now given with reference to FIGS. 3A to 3D and FIG. 4 of a method of manufacturing a glass passivation semiconductor device embodying this invention.
  • metal electrodes 18 and a metal electrode 20 are respectively mounted on opposite sides of a silicon wafer 10 prepared from a P + layer 12, N - layer 14 and N + layer 16.
  • the metal electrodes 18 act as the cathodes of a diode
  • the metal electrode 20 acts as the anode of a diode.
  • the silicon wafer 10 is subjected to mesa etching to form mesa grooves 22 shown in FIG. 3B.
  • a powdery mixture 24 of various vitreous oxides is deposited in the mesa grooves 22 (FIG. 3C).
  • the composite glass material well serves the purpose, provided it is of the type applied for protection of the surface of a semiconductor junction.
  • the composite glass material is prepared from a mixture of, for example, PbO-B 2 O 3 -SiO 2 , ZnO-B 2 O 3 -SiO 2 , PbOB 2 O 3 -SiO 2 -Al 2 O 3 or a mixture of, for example, B 2 O 3 , Al 2 O 3 , SiO 2 , ZnO and PbO.
  • the powdery mixture of the vitreous oxides is deposited on the surface of a semiconductor junction by the steps of dispersing a powdery mixture of vitreous oxides whose particle size measures less than 1 micron in an organic solvent in the suspended form and depositing the suspension on the surfaces of the junctions of the mesa grooves by precipitation, printing, electrophoresis or by means of a doctor blade. Thereafter, the vitreous mixture is attached to the surface of the semiconductor junction by being dried at a temperature of about 300° C.
  • the vitreous mixture is sintered by applying two kinds of laser beams to provide glass passivation layers (FIG. 3D).
  • One kind of laser beams is generated from a CO 2 gas laser 30 with a wavelength of 10.6 microns, and is substantially absorbed in the composite glass material.
  • the other kind of laser beams emanates from a YAG (Y 3 Al 5 O 12 ) laser 32 doped with Nd 3+ with a wavelength of about 1 micron, and are well absorbed in the silicon substrate.
  • the semiconductor wafer 10 is put on a heating board and kept at a temperature of 300° to 500° C. This step is intended to prevent a wafer locally heated by laser beams from being split by thermal stress.
  • the two kinds of laser beams 38, 40 having different wavelengths, have their paths diverted by the corresponding mirrors 34, 36 (FIG. 4).
  • the laser beams 38, 40 whose paths have thus been diverted are simultaneously irradiated onto the glass protective material residing in the mesa grooves 22.
  • the glass protective material is in powdery form, then the YAG laser beams are not absorbed in the glass protective material, nor reach the semiconductor substrate by being scattered.
  • the YAG laser beams immediately permeate the molten glass material to locally heat a boundary between the glass protective material and the silicon substrate. Since, at this time, the temperature of the silicon substrate is raised, wetting takes place between the molten glass and the silicon substrate. At this time the laser beams scan the lattice-shaped mesa grooves 22 formed in the wafer 10.
  • the laser beams need not be limited to the type used in the foregoing embodiment.
  • the YAG laser beams may be replaced by Ar laser beams.
  • the CO 2 gas laser beams well serve the purpose, provided they have such a wavelength as enables them to be readily absorbed in one glass material to raise its temperature.
  • the amount of radiation needed from the respective laser beams is defined by the temperature to which an object of their irradiation is to be heated.
  • the mesa grooves were conventionally baked only for 2 to several seconds by beams emitted from a 70 W CO 2 gas laser, and thus the heated glass protective material did not wet to a silicon substrate, but shrank into a spherical form by being repulsed from the silicon substrate.

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US06/373,731 1981-06-29 1982-04-30 Method of manufacturing a glass passivation semiconductor device Expired - Fee Related US4476154A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56099599A JPS582034A (ja) 1981-06-29 1981-06-29 半導体装置の製造方法
JP56-99599 1981-06-29

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626449A (en) * 1984-10-29 1986-12-02 Canon Kabushiki Kaisha Method for forming deposition film
US4659422A (en) * 1983-03-31 1987-04-21 Fujitsu Limited Process for producing monocrystalline layer on insulator
US4909818A (en) * 1988-11-16 1990-03-20 Jones William F System and process for making diffractive contact
US6064034A (en) * 1996-11-22 2000-05-16 Anolaze Corporation Laser marking process for vitrification of bricks and other vitrescent objects
US6822192B1 (en) 2004-04-19 2004-11-23 Acme Services Company, Llp Laser engraving of ceramic articles
US6828162B1 (en) * 2001-06-28 2004-12-07 Advanced Micro Devices, Inc. System and method for active control of BPSG deposition
US20060113287A1 (en) * 2004-11-26 2006-06-01 Canon Kabushiki Kaisha Laser cutting method
US20060113286A1 (en) * 2004-11-29 2006-06-01 Fujitsu Limited Stack structure cutting method and stack structure
US20060258047A1 (en) * 2005-05-11 2006-11-16 Canon Kabushiki Kaisha Method for laser cutting and method of producing function elements
US20080230525A1 (en) * 2007-03-21 2008-09-25 Photon Dynamics, Inc. Laser ablation using multiple wavelengths
US20100006546A1 (en) * 2008-07-08 2010-01-14 Acme Services Company, Llp Laser Engraving of Ceramic Articles
US20100264123A1 (en) * 2005-04-13 2010-10-21 Applied Materials, Inc. Annealing apparatus using two wavelengths of continuous wave laser radiation
CN107533972A (zh) * 2016-02-05 2018-01-02 新电元工业株式会社 半导体装置的制造方法
CN115985788A (zh) * 2023-01-29 2023-04-18 上海百功微电子有限公司 一种全玻璃钝化二极管及其生产方法
CN115985788B (en) * 2023-01-29 2026-05-05 上海百功微电子有限公司 All-glass passivation diode and production method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6080562A (ja) * 1983-10-07 1985-05-08 Disco Abrasive Sys Ltd 電着砥石

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151071A (en) * 1975-06-20 1976-12-25 Nec Home Electronics Ltd Manufacturing method of a semiconductor apparatus
JPS5536184A (en) * 1978-08-31 1980-03-13 American Sunroof Corp Overhead lighting apparatus for retracting hutch panel
JPS55148430A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device
JPS5642138A (en) * 1979-09-17 1981-04-20 Teijin Ltd Oxygen detecting agent

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151071A (en) * 1975-06-20 1976-12-25 Nec Home Electronics Ltd Manufacturing method of a semiconductor apparatus
JPS5536184A (en) * 1978-08-31 1980-03-13 American Sunroof Corp Overhead lighting apparatus for retracting hutch panel
JPS55148430A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device
JPS5642138A (en) * 1979-09-17 1981-04-20 Teijin Ltd Oxygen detecting agent

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4659422A (en) * 1983-03-31 1987-04-21 Fujitsu Limited Process for producing monocrystalline layer on insulator
US4626449A (en) * 1984-10-29 1986-12-02 Canon Kabushiki Kaisha Method for forming deposition film
US4909818A (en) * 1988-11-16 1990-03-20 Jones William F System and process for making diffractive contact
US6064034A (en) * 1996-11-22 2000-05-16 Anolaze Corporation Laser marking process for vitrification of bricks and other vitrescent objects
US6828162B1 (en) * 2001-06-28 2004-12-07 Advanced Micro Devices, Inc. System and method for active control of BPSG deposition
US6822192B1 (en) 2004-04-19 2004-11-23 Acme Services Company, Llp Laser engraving of ceramic articles
US8108998B2 (en) * 2004-11-26 2012-02-07 Canon Kabushiki Kaisha Laser cutting method
US20060113287A1 (en) * 2004-11-26 2006-06-01 Canon Kabushiki Kaisha Laser cutting method
US20060113286A1 (en) * 2004-11-29 2006-06-01 Fujitsu Limited Stack structure cutting method and stack structure
US7838796B2 (en) * 2004-11-29 2010-11-23 Fujitsu Limited Stack structure cutting method and stack structure
US9839976B2 (en) 2005-04-13 2017-12-12 Applied Materials, Inc. Annealing apparatus using two wavelengths of radiation
US10857623B2 (en) 2005-04-13 2020-12-08 Applied Materials, Inc. Annealing apparatus using two wavelengths of radiation
US11945045B2 (en) 2005-04-13 2024-04-02 Applied Materials, Inc. Annealing apparatus using two wavelengths of radiation
US8765618B2 (en) 2005-04-13 2014-07-01 Applied Materials, Inc. Annealing apparatus using two wavelengths of continuous wave laser radiation
US8242407B2 (en) * 2005-04-13 2012-08-14 Applied Materials, Inc. Annealing apparatus using two wavelengths of continuous wave laser radiation
US8653408B2 (en) 2005-04-13 2014-02-18 Applied Materials, Inc. Annealing apparatus using two wavelengths of continuous wave laser radiation
US20100264123A1 (en) * 2005-04-13 2010-10-21 Applied Materials, Inc. Annealing apparatus using two wavelengths of continuous wave laser radiation
US8907247B2 (en) 2005-04-13 2014-12-09 Applied Materials, Inc. Annealing apparatus using two wavelengths of laser radiation
US8890024B2 (en) 2005-04-13 2014-11-18 Applied Materials, Inc. Annealing apparatus using two wavelengths of continuous wave laser radiation
US20060258047A1 (en) * 2005-05-11 2006-11-16 Canon Kabushiki Kaisha Method for laser cutting and method of producing function elements
US7977602B2 (en) * 2007-03-21 2011-07-12 Photon Dynamics, Inc. Laser ablation using multiple wavelengths
US20080230525A1 (en) * 2007-03-21 2008-09-25 Photon Dynamics, Inc. Laser ablation using multiple wavelengths
US8232502B2 (en) 2008-07-08 2012-07-31 Acme Services Company, Llp Laser engraving of ceramic articles
US20100006546A1 (en) * 2008-07-08 2010-01-14 Acme Services Company, Llp Laser Engraving of Ceramic Articles
CN107533972B (zh) * 2016-02-05 2020-07-24 新电元工业株式会社 半导体装置的制造方法
CN107533972A (zh) * 2016-02-05 2018-01-02 新电元工业株式会社 半导体装置的制造方法
CN115985788A (zh) * 2023-01-29 2023-04-18 上海百功微电子有限公司 一种全玻璃钝化二极管及其生产方法
CN115985788B (en) * 2023-01-29 2026-05-05 上海百功微电子有限公司 All-glass passivation diode and production method thereof

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Publication number Publication date
JPS582034A (ja) 1983-01-07

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