US5796762A - Room temperature stable color center laserLiF:F2 +** material and method of lasing - Google Patents

Room temperature stable color center laserLiF:F2 +** material and method of lasing Download PDF

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US5796762A
US5796762A US08/826,924 US82692497A US5796762A US 5796762 A US5796762 A US 5796762A US 82692497 A US82692497 A US 82692497A US 5796762 A US5796762 A US 5796762A
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crystal
centers
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color centers
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Sergey Mirov
Alex Dergachey
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UAB Research Foundation
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1681—Solid materials using colour centres
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Definitions

  • the present invention relates to the field of Quantum Electronics, and more particularly to the element basis of laser technology, and can be used for developing tunable solid state lasers.
  • the invention can be used in cases when monochromatic laser emission tunable in the visible-infrared spectral region is required for solving problems in various fields of science and technology, such as laser spectroscopy, photo chemistry, photo biology, medicine, and the like.
  • F 2 + color centers (CCs) in alkali-halide crystals constitute a pair of neighboring anion vacancies (located along the 110! axis), with one captured electron.
  • the fact that the anion vacancies are equivalent was used to compare the energy levels of the F 2 + centers with those of the hydrogen molecular ion, H 2 + .
  • Such an approach though not very accurate, provides a satisfactory consistency for the energies of transitions.
  • the values of the F 2 + transition energies can be obtained from the equation
  • the F 2 + CC energy level diagram is presented in M. A. Aegerter and F. Luty, The F 2 + center in KCL crystal. Part 1. Formation and bleaching kinetics, Phys. Stat. Sol. (b), 43, 227-243 (1971), which is herein incorporated by reference.
  • the levels are marked analogously with those of the H 2 + molecular ion.
  • the low-lying optical transition is the transition 1s ⁇ g ⁇ 2p ⁇ u .
  • the two higher-energy transitions, 1s ⁇ g ⁇ 2p ⁇ u are in the region of the F absorption band.
  • the quantum yield of the radiational transition from the upper 2p ⁇ u level decreases practically to zero with increasing temperature up to 100K. At temperatures above 100K, only emission from the lower excited 2p ⁇ u level can be observed. The quantum yield of this F 2 + emission, which is observed for all alkali-halide crystals is rather high. For instance, according to I. A. Parfianovich, V. M.
  • the F 2 + luminescence band shape in LiF is well described by the Gaussian curve.
  • the measured lifetime of the relaxed excited at 77K state equals 29 ns.
  • LiF:F 2 + crystals have significant advantages as efficient active media for lasers tunable in the 820-1150 nm spectral region.
  • the high quantum efficiency to temperatures above room temperature, the considerable values of absorption and emission cross-sections, and the frequency tuning region exceeding those for the majority of known laser media have roused great interest in this medium.
  • Low thermal stability of F 2 + centers (half decay time at 300K is about 12 hours) previously prevented wide use of LiF:F 2 + lasers.
  • the thermal stability of positively charged F 2 + centers can be raised by applying suitable anion or cation impurity doping during crystal growth.
  • new F 2 + like optical centers are formed, which are perturbed by dopant ions or by components of dopant destruction.
  • the F 2 + *-F 2 + center perturbed by Me ++ ions in LiF & NaF crystals
  • the F 2 + **-F 2 + center perturbed by O -- ions in LiF, NaF, NaCl, KCl, KBr crystals
  • the (F 2 + ) A -F 2 + center perturbed by Li in NaF and KCl crystals.
  • thermostabilization of F 2 + like centers does not always provide appropriate photostability of active medium under powerful laser excitation.
  • pumping of the LiF:F 2 + ** stabilized crystals by the radiation of the second harmonic of YAG:Nd laser results in a significant fading of the color center laser output. This fading is caused by the complex photo-chemical process in the pumping channel of the crystal, which involves two-step photoionization of neutral F 2 centers and trapping of the released electron by the positively charged F 2 + centers.
  • the object of the present invention is to develop and optimize LiF:F 2 + thermostabilized active media, to propose a method of pumping, and to realize a room temperature stable and efficient operation of the color center laser.
  • FIG. 1 is a flow chart of an embodiment of a method for producing LiF:F 2 + ** active medium according to the present invention
  • FIG. 2 is a block diagram of an embodiment of a tunable laser system according to the present invention.
  • FIG. 3 illustrates absorption (1 and 1'), luminescence (2) and lasing (3) spectra (in non-selective resonator) for F 2 + ** color centers in LiF laser crystal at 300K;
  • FIG. 1 is a flow chart for an embodiment of a method 100 for producing LiF:F 2 + ** active media according to the present invention.
  • a LiF crystal is grown.
  • the crystals of the present invention can be grown by any method which assures good optical quality.
  • a preferred embodiment for crystal growth is the Kyropulos method in which the crystal is grown from a seed inserted into alkali halide liquid near its melt temperature.
  • the crystals were grown by the Kyropulos method in platinum crucibles under argon atmosphere from nominally pure raw materials, doped with LiOH (up to 1 mole %), Li 2 O (up to 0.5 mole %) and MgF 2 (up to 0.5 mole %).
  • the crystals grown in procedural step 102 are first mechanically polished in procedural step 104, and subjected to a special multistep irradiation treatment in procedural steps 106, 108, 110, and 112.
  • the crystals are subjected to ⁇ -irradiation, X-ray or electron irradiation with a dose of 2.5 ⁇ 10 3 -1.5-10 4 C/kg at a temperature T ⁇ 240K.
  • the crystals are heated up to temperature corresponding to high mobility of O -- V a + dipoles and low mobility of pure F 2 + centers (T ⁇ 250-270K) and stored in the refrigerator for a period up to one month.
  • the crystals may be reirradiated at the temperature lower than temperature of anion vacancies mobility in LiF (T ⁇ 240K) with a dose of 25-250 C/kg and then subjected to the procedure described in the procedural step 108.
  • the crystals are heated up to the temperature of O -- V a + , V a + V c - , and F 2 + mobility in LiF (for example, room temperature) and are stored for a period up to some months, after which the crystals exhibit a stable concentration of the color centers of interest and are ready for utilization as active medium for tunable lasers.
  • a characterization of the optical properties and losses of the crystal is conducted in the procedural step 114. This characterization is conducted to determine value of active absorption and losses in the resulting crystal.
  • procedural step 114 determines real coefficients of active absorption and passive losses the crystal may be in the procedural step 104 mechanically processed and polished again up to the dimensions optimal for particular output parameters of the tunable laser, and then the crystal may be used in an application as an active element in the dispersive cavity of a device, which is represented by procedural step 116.
  • F 2 + centers may take part in a slow temperature-dependent migration process. Colliding with the F, F 2 + and F 2 - CCs, they form more complex CCs-F 3 + , F 4 + , and F 4 , respectively:
  • the ratio of the contributions of different reactions depends on the irradiation procedure and impurity composition in the irradiated crystal. Below, the irradiation treatment optimization for F 2 + stabilized color center formation of the doped LiF crystals is presented
  • Ionizing treatment creates a great number of divided electron and holes, which after thermalization can form self localized excitons.
  • This excitons localized near a specific anion node of the crystalline lattice may annihilate and the released energy will be used for shifting anion from its node to the interstitial position with an anion vacancy and F center formation according to the schemes (1) and (2).
  • O -- V a + are accumulated in a high quantity, since initially introduced during LiF crystal growing O -- V a + dipoles are photo-thermostable under ⁇ -irradiation at T ⁇ 240K, and, in addition to this, the ionizing treatment creates a high concentration of these dipoles as well as single ionized oxygen atoms and molecules due to a hydroxyl group dissociation. It is important to note that one of the products of OH - radiolysis--interstitial H i o atoms are efficient traps of electrons
  • the F center formation is likely to occur near impurity-cation vacancy dipole Mg ++ -V c - .
  • the F center gives its electron to the divalent metal forming Mg + and a pair of vacancies
  • Anion-cation dipoles are important components of F 2 + pertubed color centers that are formed at the second stage of the crystal preparation.
  • superfluous concentration of Mg dopant may play a negative role due to decreasing concentration of the useful O --V a + dipoles by bonding with oxygen and formation of the Mg ++ O -- dipoles that do not take part in F 2 + like center formation.
  • the concentration of F centers is decreased due to their association with anion vacancies. It is a useful process helping to increase at the following stages the concentration of F 2 + stabilized centers and decrease concentration of other aggregates and colloids. Note that the temperature interval 250-270K is chosen within these borders since anion vacancies are mobile in the crystal and F 2 + centers as well as V a + V c - and O --V a + dipoles are frozen and cannot diffuse in the crystalline lattice.
  • the crystals may be reirradiated at the temperature T ⁇ 240K with a dose of 25-250 C/kg and then subjected to the procedure described in the stage two.
  • the main idea of this treatment is to increase the amount of pure F 2 + centers by means of increasing the amount of anion vacancies (by the neutral F centers ionizing) that have been exhausted at the second stage due to process (16).
  • the crystals are heated up to room temperature and are stored for a period of some months, after which the crystals exhibit a stable concentration of the color centers of interest and is ready for utilization as active medium for the tunable laser.
  • the processes that take place at this stage are as follows.
  • F 2 + centers Another very important reaction occurs due to the intrinsic mobility of F 2 + centers at room temperature. The migration of these centers may lead to a useful process of association of F 2 + centers with single ionized oxygen atoms O - with F 2 + O - centers formation
  • V a + V c - are mobile too (V a + V c - start to be mobile at temperature about 273K) they may associate with F centers and pertubed F 2 + centers occur:
  • LiF crystal with F 2 + stabilized color centers was investigated at room temperature and its absorption, luminescence, lasing and operational properties were studied.
  • thermostabilized active color centers is only 50% of the success for stable output lasing of the color center laser.
  • thermostability it is necessary to realize photostability of the active color center as well as other color centers that may be ionized by the powerful pump laser excitation.
  • the proposed method for photo-thermostable lasing of LiF: F 2 + ** color center crystals consists of three important components.
  • the technology of active medium formation should provide the highest possible concentration of the working optical centers.
  • the pump radiation will be predominantly absorbed by the photostable F 2 + like centers.
  • pump radiation from one hand should match the absorption band of F 2 + ** color centers to provide a population of inversion and lasing of these centers, and from another, should be longer than the threshold wavelength determining the process of two step ionization of the neutral F 2 centers.
  • this wavelength is about 590 nm.
  • the wavelength of the pump radiation should not match the absorption bands of the parasitic aggregate color centers that may occur in the crystal and result in decreasing of the efficiency of lasing.
  • these parasitic color centers exhibit absorption in the region 500-600 nm.
  • the optimal spectral region for wavelength for LiF:F 2 + ** color center laser pumping is about 590-750 nm.
  • FIG. 2 is a block diagram of tunable laser system 200 having LiF:F 2 + ** crystal as active element 202 according to the present invention.
  • the tunable laser system may include traditional components for tunable lasers such as: a pumping system 204, an active medium, rear mirror 206, and dispersive system 208.
  • the dispersive system 208 may include a diffractive grating to provide narrowband frequency tuning of the laser output (by rotating the grating) across the broad amplification band of F 2 + ** centers.
  • the optical cavity, in which LiF crystal is placed may be similar to the conventional optical cavity for tunable laser systems having a tunable dye, color center, or transitional-metal doped active medium.
  • the laser system 200 produces tunable output radiation 210.
  • the pumping system 204 provides radiation that longitudinally or transversially excites active medium 202.
  • the pumping system may be a commercially available alexandrite laser, ruby laser, dye laser, Raman shifted second harmonic of neodymium laser, diode laser, or any possible light source (laser or flashlamp) emitting in the spectral range 590-750 nm.
  • Tunable laser systems according to the present invention may be tuned using conventional techniques known to those of skill in the art.
  • the crystals were grown by the Kyropulos method, in argon atmosphere, from nominally pure raw materials, and doped with LiOH (0.1 mole %), Li 2 O (0.05 mole %) and MgF 2 (0.05 mole %).
  • the grown crystals were subjected to a following multi-step ionizing irradiation treatment:
  • Crystals were ⁇ -irradiated with a dose of 5 ⁇ 10 3 C/kg at a temperature of about 200K (H 2 CO 3 melting temperature)
  • Crystals were ⁇ -reirradiated at the temperature about 200K with a dose of 50 C/kg and stored in the refrigerator for a period of two weeks.
  • Absorption measurements were made with Shimadzu 3401 spectrophotometer. Measured coefficient of absorption is about 2.3 cm -1 @620 nm.
  • n 1.39--refractive index at 617 nm
  • the optimum wavelength was ⁇ 740 nm. Because the alexandrite laser has the maximum output energy around 750 nm, with a sharp drop to 720 nm, the pumping wavelength of 740 nm is a compromise at which the output energy of the alexandrite laser is high enough and the absorption of F 2 + ** centers is still sufficient for effective lasing.
  • the lasing spectrum for the LiF:F 2 + ** laser with a non-selective resonator under alexandrite laser pumping (740 nm) is shown in FIG. 3 (curve 3) with maximum at 950 nm and bandwidth of about 30-40 nm (FWHM).
  • the input-output curve for this laser with a 50% output coupler is shown in FIG. 4 (curve 1) with slope efficiency of ⁇ 31%.
  • the lasing threshold was estimated to be ⁇ 150 mJ/cm 2 .
  • a maximum output average power of 1.4 W was achieved with 5 W of input power at 740 nm incident onto the crystal (real efficiency ⁇ 28%).
  • the same resonator arrangement was used for 683 nm pumping radiation, but the output coupler had 10% reflectivity. A much higher slope efficiency of 58% and real conversion efficiency of ⁇ 53% were obtained (see FIG. 4, curve 2).
  • the lasing threshold of 7-8 mJ/cm 2 under 683 nm pumping was also lower (even with 10% reflectivity of output coupler).
  • the maximum output power of the LiF:F 2 + ** laser was limited by the available capabilities of the pumping lasers used.
  • the output coupler was replaced with a diffraction grating with 1200 grooves/mm.
  • the experimental tuning curve extended from 820 to 1120 nm and is shown in FIG. 5.
  • the tuning range was extended up to 1200 nm.
  • the described color center laser can be of great interest of course in the UV-visible 200-600 nm spectral region.
  • This spectral region can be easily obtained by a standard frequency doubling, tripling and quadrupling of the tunable IR radiation.
  • parametric frequency mixing--realization of the frequency difference in a nonlinear crystal for example AgGaS 2 , AgGaSe 2 , HgGaS 4 , and GaSe

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982797A (en) * 1996-04-08 1999-11-09 Uab Research Foundation Room temperature stable color center laser, LiF:F2+ ** material, method of lasing
US20020003440A1 (en) * 2000-01-13 2002-01-10 Qian L. J. Femtosecond kerr-lens mode locking with negative nonlinear phase shifts
US6795465B2 (en) * 2002-04-11 2004-09-21 Kulite Semiconductor Products, Inc. Dual layer color-center patterned light source
RU2282214C1 (ru) * 2005-05-04 2006-08-20 ГОУ ВПО Уральский государственный технический университет - УПИ Способ изготовления гетероструктур
RU2347741C1 (ru) * 2007-08-27 2009-02-27 Государственное образовательное учреждение высшего профессионального образования "Уральский государственный технический университет - УПИ имени первого Президента России Б.Н.Ельцина" Способ получения нанокристаллических покрытий на основе нанокристаллов фторида лития или фторида натрия
CN111018329A (zh) * 2019-12-23 2020-04-17 中国工程物理研究院核物理与化学研究所 一种光学元器件/光学材料色心的制备固化方法
CN115473118A (zh) * 2022-09-28 2022-12-13 山东大学 一种宽温域稳定的全固态激光器及倍频激光器
CN121298571A (zh) * 2025-12-10 2026-01-09 中国科学院上海硅酸盐研究所 一种高精度无损评估晶体激光损伤阈值的方法

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US6546027B1 (en) * 1999-12-01 2003-04-08 Hoya Photonics, Inc. Laser saturable absorber and passive negative feedback elements, and method of producing energy output therefrom
RU210805U1 (ru) * 2021-12-28 2022-05-05 Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук Спектрально-селективное устройство для систем стабилизации частоты лазерного излучения

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644550A (en) * 1983-04-11 1987-02-17 Huba Csery Liquid cooled neodymium-phosphate glass-impulse laser particularly for medical applications
US4672619A (en) * 1982-05-18 1987-06-09 University Of Utah Research Foundation Color centers for tunable lasers in the near infrared region
US4881234A (en) * 1987-03-18 1989-11-14 The United States Of America As Represented By The Secretary Of The Navy Method for forming copious (F2+)A centers in certain stable, broadly tunable laser-active materials
US4990322A (en) * 1986-06-05 1991-02-05 Cornell Research Foundation, Inc. NaCl:OH color center laser
US5267254A (en) * 1992-04-15 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Color center laser with transverse auxiliary illumination
US5471493A (en) * 1994-09-16 1995-11-28 The Uab Research Foundation Sc2+ based active crystalline luminescent media for laser systems tunable in UV-visible spectral range

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69736742T2 (de) * 1996-04-08 2007-08-16 Uab Research Foundation, Birmingham RAUMTEMPERATURSTABILER FARBZENTRUMLASER,LiF:F2+** MATERIAL UND LASERVERFAHREN

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672619A (en) * 1982-05-18 1987-06-09 University Of Utah Research Foundation Color centers for tunable lasers in the near infrared region
US4644550A (en) * 1983-04-11 1987-02-17 Huba Csery Liquid cooled neodymium-phosphate glass-impulse laser particularly for medical applications
US4990322A (en) * 1986-06-05 1991-02-05 Cornell Research Foundation, Inc. NaCl:OH color center laser
US4881234A (en) * 1987-03-18 1989-11-14 The United States Of America As Represented By The Secretary Of The Navy Method for forming copious (F2+)A centers in certain stable, broadly tunable laser-active materials
US5267254A (en) * 1992-04-15 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Color center laser with transverse auxiliary illumination
US5471493A (en) * 1994-09-16 1995-11-28 The Uab Research Foundation Sc2+ based active crystalline luminescent media for laser systems tunable in UV-visible spectral range

Non-Patent Citations (44)

* Cited by examiner, † Cited by third party
Title
A.A. Alybakov, Yu.L. Gusev, O.V. Drozdova, A.V. Kirpihnikov, S.S. Kolyago and B.S. Umurzakov, The properties of active media based on (F 2 ) and F 3 color centers in NaF crystals, in Proc. 4 All Union Conf. Tunable Lasers, Novosibirsk, USSR, Dec. 1983, pp. 124 129, V.P. Chebotaev, Ed. Place: Inst. Thermo Phys. USSR Acad. Sci. (1984). *
A.A. Alybakov, Yu.L. Gusev, O.V. Drozdova, A.V. Kirpihnikov, S.S. Kolyago and B.S. Umurzakov, The properties of active media based on (F+2) and F-3 color centers in NaF crystals, in Proc. 4 All-Union Conf. Tunable Lasers, Novosibirsk, USSR, Dec. 1983, pp. 124-129, V.P. Chebotaev, Ed. Place: Inst. Thermo-Phys. USSR Acad. Sci. (1984).
C.J. Delbecq, A Study of M Center Formation in Additively Colored KCl, Z. Phys., vol. 171, N3, pp. 60 581 (1963). *
C.J. Delbecq, A Study of M Center Formation in Additively Colored KCl, Z. Phys., vol. 171, N3, pp. 60-581 (1963).
Ch.B. Lushchik, I.K. Vitol and M.A. E lango, Decay of electronic excitations into radiation defects in ionic crystals, Uspehi Fizicheskih Nauk, 122, 223 252 (1977); Sov. Achievements Physi. Sci. (1977). *
Ch.B. Lushchik, I.K. Vitol and M.A. Elango, Decay of electronic excitations into radiation defects in ionic crystals, Uspehi Fizicheskih Nauk, 122, 223-252 (1977); Sov. Achievements Physi. Sci. (1977).
D. Wandt, W. Gellerman, F. Luty and H. Welling, Tunable cw laser operation in the 1.45 2.16 m range based on F 2 like centers in O 2 doped NaCl, KCl, and KBr crystals, J. Appl. Phys., 61, 864 (1987). *
D. Wandt, W. Gellerman, F. Luty and H. Welling, Tunable cw laser operation in the 1.45-2.16 μm range based on F+2 -like centers in O-2 doped NaCl, KCl, and KBr crystals, J. Appl. Phys., 61, 864 (1987).
I.A. Parfianovich, F.M. Hulugurov, N.A. Ivanov, A.A. Mikhailenko, V.A. Chepurnoi and A.P. Shkadarevich, Doped LiF crystals new active media for tunable lasers, in Proc. 4 All Union Conf. Tunable Lasers, Novosibirsk, USSR, Dec. 1983, pp. 98 103, V.P. Chebotaev Ed. *
I.A. Parfianovich, F.M. Hulugurov, N.A. Ivanov, A.A. Mikhailenko, V.A. Chepurnoi and A.P. Shkadarevich, Doped LiF crystals -new active media for tunable lasers, in Proc. 4 All-Union Conf. Tunable Lasers, Novosibirsk, USSR, Dec. 1983, pp. 98-103, V.P. Chebotaev Ed.
I.A. Parfianovich, V.M. Hulugurov, B.D. Lobanov, and N.T. Maximova, Luminescence and stimulated emission of color centers in LiF, Bull. Acad. Sci. USSR, Phys. Ser., 43, 20 27 (1979). *
I.A. Parfianovich, V.M. Hulugurov, B.D. Lobanov, and N.T. Maximova, Luminescence and stimulated emission of color centers in LiF, Bull. Acad. Sci. USSR, Phys. Ser., 43, 20-27 (1979).
J. Nahum, Optical Properties and Mechanism of Formation of Some F Aggregate Centers in LiF, Phys. Rev., 158, 814 825 (1967). *
J. Nahum, Optical Properties and Mechanism of Formation of Some F-Aggregate Centers in LiF, Phys. Rev., 158, 814-825 (1967).
L. Bossi, C. Bussolati and G. Spinolo, Lifetime of the first excited state of the F 2 center in LiF, Phys. Lett., 32A, 159 160 (1970). *
L. Bossi, C. Bussolati and G. Spinolo, Lifetime of the first excited state of the F+2 center in LiF, Phys. Lett., 32A, 159-160 (1970).
L.F. Mollenauer and J.C. White (Eds.), Tunable Lasers, pp. 1 277. New York: Springer Verlag (1987). *
L.F. Mollenauer and J.C. White (Eds.), Tunable Lasers, pp. 1-277. New York: Springer Verlag (1987).
L.F. Mollenauer, D.M. Bloom and A.M. DelGaudio, Broadly tunable cw lasers using F 2 centers for the 1.26 1.48 and 0.82 1.07 m bands, Opt. Lett., 3, 48 50 (1978). *
L.F. Mollenauer, D.M. Bloom and A.M. DelGaudio, Broadly tunable cw lasers using F+2 centers for the 1.26-1.48 and 0.82-1.07 μm bands, Opt. Lett., 3, 48-50 (1978).
L.F. Mollenauer, Dyelike lasers for the 0.9 2 m region using F 2 centers in alkali halides, Opt. Lett., 1, 164 165 (1977). *
L.F. Mollenauer, Dyelike lasers for the 0.9-2-μm region using F+2 centers in alkali halides, Opt. Lett., 1, 164-165 (1977).
L.F. Mollenauer, Progress in color center lasers, J. Opt. Soc. Amer., 70, 634 645 (1980). *
L.F. Mollenauer, Progress in color center lasers, J. Opt. Soc. Amer., 70, 634-645 (1980).
M.A. Aegerter and F. Luty, The F 2 Center in KC1 Crystals. Part II: Optical Properties and Analogy with the H 2 Molecule, Phys. Stat. Sol. (b), 43, 245 261 (1971). *
M.A. Aegerter and F. Luty, The F 2 Center in KCl Crystals. Part I:Formation and Bleaching Kinetics, Phys. Stat. Sol.(b), 43, 227 243 (1971). *
M.A. Aegerter and F. Luty, The F+2 Center in KC1 Crystals. Part II: Optical Properties and Analogy with the H+2 Molecule, Phys. Stat. Sol. (b), 43, 245-261 (1971).
M.A. Aegerter and F. Luty, The F+2 Center in KCl Crystals. Part I:Formation and Bleaching Kinetics, Phys. Stat. Sol.(b), 43, 227-243 (1971).
T.T. Basiev, S.B. Mirov and A.M. Prokhorov, Periodic pulsed tunable laser using an LiF crystal with F 2 centers excited by second harmonic radiation from an Nd 3 garnet laser, Sov. J. Dokl. Acad. Nauk SSSR, 246, 72 74 (1979). *
T.T. Basiev, S.B. Mirov and A.M. Prokhorov, Periodic pulsed tunable laser using an LiF crystal with F+2 -centers excited by second-harmonic radiation from an Nd3+ -garnet laser, Sov. J. Dokl. Acad. Nauk SSSR, 246, 72-74 (1979).
T.T. Basiev, S.B. Mirov and V.V. Osiko, Room Temperature Color Center Lasers, IEEE J. of QE 24, 1052 (1988). *
T.T. Basiev, S.B. Mirov and V.V. Osiko, Room-Temperature Color Center Lasers, IEEE J. of QE 24, 1052 (1988).
T.T. Basiev, S.B. Mirov, Room Temperature Tunable Color Center Lasers, Laser Science and Technology books series. An International Handbook, vol. 16 pp. 1 160. Gordon and Breach Science Publishers/Harwood Academic Publishers (1994). *
T.T. Basiev, S.B. Mirov, Room Temperature Tunable Color Center Lasers, Laser Science and Technology books series. An International Handbook, vol. 16 pp. 1-160. Gordon and Breach Science Publishers/Harwood Academic Publishers (1994).
T.T. Basiev, V.A. Konyushkin, S.B. Mirov, V.V. Ter Mikirtychev, Efficient Tunable Lasers Utilizing F 2 and F 2 Color Centers in LiF(F 2 ) Crystals, Sov. J. Quant. Electron., 19, 145 (1992). *
T.T. Basiev, V.A. Konyushkin, S.B. Mirov, V.V. Ter-Mikirtychev, Efficient Tunable Lasers Utilizing F2 and F+2 Color Centers in LiF(F2) Crystals, Sov. J. Quant. Electron., 19, 145 (1992).
T.T. Basiev, Yu.K. Voron ko, S.B. Mirov, V.V. Osiko, A.M. Prokhorov, Kinetics of accumulation and excitation of F 2 color centers in LiF crystals, Sov. JETP Lett., 30, 626 629 (1979). *
T.T. Basiev, Yu.K. Voron'ko, S.B. Mirov, V.V. Osiko, A.M. Prokhorov, Kinetics of accumulation and excitation of F+2 color centers in LiF crystals, Sov. JETP Lett., 30, 626-629 (1979).
V.M. Hulugurov and B.D. Lobanov, Laser action in the spectral region of 0.84 1.13 m in the color center LiF OH crystal at 300 K., Sov. Tech. Phys. Lett., 4, 595 596 (1978). *
V.M. Hulugurov and B.D. Lobanov, Laser action in the spectral region of 0.84-1.13 μm in the color center LiF-OH crystal at 300° K., Sov. Tech. Phys. Lett., 4, 595-596 (1978).
W. Gellermann, K.P. Koch and F. Luty, Recent progress in color center lasers, Laser Focus, 71 75 (Apr. 1982). *
W. Gellermann, K.P. Koch and F. Luty, Recent progress in color center lasers, Laser Focus, 71-75 (Apr. 1982).
Yu.L. Gusev, S.I. Marennikov and V.P. Chebotaev, Lasing effect in the spectrum region of 0.88 1.2 m using F 2 and F 2 color centers in LiF, Sov. Tech. Phys. Lett., 3, 124 (1977). *
Yu.L. Gusev, S.I. Marennikov and V.P. Chebotaev, Lasing effect in the spectrum region of 0.88-1.2 μm using F+2 and F-2 color centers in LiF, Sov. Tech. Phys. Lett., 3, 124 (1977).

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