ATE341117T1 - Raumtemperaturstabiler farbzentrenlaser,lif:f2+** material und laserverfahren - Google Patents

Raumtemperaturstabiler farbzentrenlaser,lif:f2+** material und laserverfahren

Info

Publication number
ATE341117T1
ATE341117T1 AT97920185T AT97920185T ATE341117T1 AT E341117 T1 ATE341117 T1 AT E341117T1 AT 97920185 T AT97920185 T AT 97920185T AT 97920185 T AT97920185 T AT 97920185T AT E341117 T1 ATE341117 T1 AT E341117T1
Authority
AT
Austria
Prior art keywords
laser
lif
crystal
room temperature
color center
Prior art date
Application number
AT97920185T
Other languages
English (en)
Inventor
Sergey B Mirov
Alex Yu Dergachev
Original Assignee
Uab Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uab Research Foundation filed Critical Uab Research Foundation
Application granted granted Critical
Publication of ATE341117T1 publication Critical patent/ATE341117T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1681—Solid materials using colour centres
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
  • Glass Compositions (AREA)
AT97920185T 1996-04-08 1997-04-08 Raumtemperaturstabiler farbzentrenlaser,lif:f2+** material und laserverfahren ATE341117T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1502496P 1996-04-08 1996-04-08

Publications (1)

Publication Number Publication Date
ATE341117T1 true ATE341117T1 (de) 2006-10-15

Family

ID=21769129

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97920185T ATE341117T1 (de) 1996-04-08 1997-04-08 Raumtemperaturstabiler farbzentrenlaser,lif:f2+** material und laserverfahren

Country Status (6)

Country Link
US (2) US5796762A (de)
EP (1) EP0898800B1 (de)
AT (1) ATE341117T1 (de)
AU (1) AU2444597A (de)
DE (1) DE69736742T2 (de)
WO (1) WO1997038474A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69736742T2 (de) * 1996-04-08 2007-08-16 Uab Research Foundation, Birmingham RAUMTEMPERATURSTABILER FARBZENTRUMLASER,LiF:F2+** MATERIAL UND LASERVERFAHREN
US6546027B1 (en) * 1999-12-01 2003-04-08 Hoya Photonics, Inc. Laser saturable absorber and passive negative feedback elements, and method of producing energy output therefrom
US20020003440A1 (en) * 2000-01-13 2002-01-10 Qian L. J. Femtosecond kerr-lens mode locking with negative nonlinear phase shifts
US6795465B2 (en) * 2002-04-11 2004-09-21 Kulite Semiconductor Products, Inc. Dual layer color-center patterned light source
RU2282214C1 (ru) * 2005-05-04 2006-08-20 ГОУ ВПО Уральский государственный технический университет - УПИ Способ изготовления гетероструктур
RU2347741C1 (ru) * 2007-08-27 2009-02-27 Государственное образовательное учреждение высшего профессионального образования "Уральский государственный технический университет - УПИ имени первого Президента России Б.Н.Ельцина" Способ получения нанокристаллических покрытий на основе нанокристаллов фторида лития или фторида натрия
CN111018329B (zh) * 2019-12-23 2022-09-23 中国工程物理研究院核物理与化学研究所 一种光学元器件/光学材料色心的制备固化方法
RU210805U1 (ru) * 2021-12-28 2022-05-05 Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук Спектрально-селективное устройство для систем стабилизации частоты лазерного излучения
CN115473118A (zh) * 2022-09-28 2022-12-13 山东大学 一种宽温域稳定的全固态激光器及倍频激光器
CN121298571B (zh) * 2025-12-10 2026-03-10 中国科学院上海硅酸盐研究所 一种高精度无损评估晶体激光损伤阈值的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672619A (en) * 1982-05-18 1987-06-09 University Of Utah Research Foundation Color centers for tunable lasers in the near infrared region
HU190084B (en) * 1983-04-11 1986-08-28 Mta Koezponti Fizikai Kutato Intezete,Hu Pulsed neodymum phosphate glass laser
US4990322A (en) * 1986-06-05 1991-02-05 Cornell Research Foundation, Inc. NaCl:OH color center laser
US4881234A (en) * 1987-03-18 1989-11-14 The United States Of America As Represented By The Secretary Of The Navy Method for forming copious (F2+)A centers in certain stable, broadly tunable laser-active materials
US5267254A (en) * 1992-04-15 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Color center laser with transverse auxiliary illumination
US5471493A (en) * 1994-09-16 1995-11-28 The Uab Research Foundation Sc2+ based active crystalline luminescent media for laser systems tunable in UV-visible spectral range
DE69736742T2 (de) * 1996-04-08 2007-08-16 Uab Research Foundation, Birmingham RAUMTEMPERATURSTABILER FARBZENTRUMLASER,LiF:F2+** MATERIAL UND LASERVERFAHREN

Also Published As

Publication number Publication date
AU2444597A (en) 1997-10-29
DE69736742T2 (de) 2007-08-16
EP0898800A1 (de) 1999-03-03
EP0898800B1 (de) 2006-09-27
WO1997038474A1 (en) 1997-10-16
US5796762A (en) 1998-08-18
EP0898800A4 (de) 2000-04-12
US5982797A (en) 1999-11-09
DE69736742D1 (de) 2006-11-09

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