US8243510B2 - Non-volatile memory cell with metal capacitor - Google Patents

Non-volatile memory cell with metal capacitor Download PDF

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Publication number
US8243510B2
US8243510B2 US11/514,029 US51402906A US8243510B2 US 8243510 B2 US8243510 B2 US 8243510B2 US 51402906 A US51402906 A US 51402906A US 8243510 B2 US8243510 B2 US 8243510B2
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metal
memory cell
volatile memory
transistor
capacitor
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US11/514,029
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US20080054331A1 (en
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Andrew Chen
Bibhudatta Sahoo
Ali Anvar
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Avago Technologies International Sales Pte Ltd
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Broadcom Corp
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Priority to EP07010405.4A priority patent/EP1895594B1/fr
Priority to CN2007101488489A priority patent/CN101136412B/zh
Priority to KR1020070087837A priority patent/KR100886271B1/ko
Priority to TW096132211A priority patent/TWI466300B/zh
Publication of US20080054331A1 publication Critical patent/US20080054331A1/en
Priority to HK08108182.3A priority patent/HK1119483B/xx
Publication of US8243510B2 publication Critical patent/US8243510B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer

Definitions

  • the present invention is generally in the field of semiconductor devices. More specifically, the present invention is in the field of semiconductor memory devices.
  • Non-volatile memory cells can be formed using a “double-poly” structure, in which a control gate and a floating gate are each formed in a separate polycrystalline silicon (also referred to as polysilicon) layer.
  • double-poly processes are expensive due to the additional manufacturing steps required to form the multiple polysilicon layers.
  • Non-volatile memory cell the gate of a MOS transistor, which acts as a floating gate, is coupled to a MOS capacitor, which acts as a control gate.
  • MOS capacitor which acts as a control gate.
  • MOS capacitors can suffer from charge leakage through the gate dielectric, as well as junction leakage from the NWELL to the silicon substrate, resulting in a memory cell with decreased data retention reliability.
  • a non-volatile memory cell with metal capacitor substantially as shown in and/or described in connection with at least one of the figures, and as set forth more completely in the claims.
  • FIG. 1 is a schematic diagram illustrating an exemplary non-volatile memory cell.
  • FIG. 2 shows a cross-sectional view of a conventional non-volatile memory cell including exemplary a conventional MOS capacitor.
  • FIG. 3A shows a top view of an exemplary non-volatile memory cell in accordance with one embodiment of the present invention.
  • FIG. 3B shows a cross-sectional view of an exemplary non-volatile memory cell in accordance with one embodiment of the present invention.
  • FIG. 4A is a schematic diagram illustrating one exemplary configuration utilizing an embodiment of the invention's non-volatile memory cell.
  • FIG. 4B is a schematic diagram illustrating one exemplary configuration utilizing an embodiment of the invention's non-volatile memory cell.
  • FIG. 4C is a schematic diagram illustrating one exemplary configuration utilizing an embodiment of the invention's non-volatile memory cell.
  • FIG. 5 illustrates a diagram of an exemplary electronic system including an exemplary semiconductor chip or die utilizing one or more of the invention's non-volatile memory cells.
  • the present invention is directed to a non-volatile memory cell with metal capacitor.
  • FIG. 1 is a schematic diagram illustrating an exemplary non-volatile memory cell 100 .
  • Non-volatile memory cell 100 includes non-volatile memory transistor 102 , capacitor 104 control gate 106 , floating gate 108 , and source/drain 110 .
  • floating gate 108 of non-volatile memory transistor 102 is capacitively coupled to control gate 106 by capacitor 104 .
  • Non-volatile memory cell 100 can be programmed and erased by hot carrier injection and/or Fowler-Nordheim tunneling, for example.
  • the voltage at control gate 106 required to turn on non-volatile memory transistor 102 corresponds to a state of non-volatile memory cell 100 .
  • a high voltage can correspond to an erased state
  • a low voltage can correspond to a programmed state.
  • the state of non-volatile memory cell 100 can be outputted by source/drain 110 by applying a specific voltage to control gate 106 .
  • a double-poly structure where the control gate and the floating gate are formed in separate polysilicon layers, can be used to fabricate non-volatile memory cell 100 .
  • the additional fabrication steps required by the double-poly process greatly add to the cost of the non-volatile memory cell.
  • FIG. 2 shows exemplary conventional non-volatile memory cell 200 including exemplary conventional transistor 202 and capacitor 204 situated on substrate 220 .
  • Substrate 220 can be a P type silicon, for example.
  • Transistor 202 can be an n-channel metal-oxide-semiconductor field-effect transistor (NMOS), and capacitor 204 can be a metal-oxide-semiconductor (MOS) capacitor.
  • NMOS metal-oxide-semiconductor field-effect transistor
  • MOS metal-oxide-semiconductor
  • Non-volatile memory cell 200 further includes control gate 206 which is a first terminal of MOS capacitor 204 , floating gate 208 which is the gate of NMOS transistor 202 , source/drain node 210 , MOS capacitor dielectric 212 , MOS capacitor gate 214 which is a second terminal of MOS capacitor 204 , source/drain N+ diffusion regions 218 of NMOS transistor 202 , transistor gate dielectric 222 , N WELL 224 separated from the closest source/drain diffusion region 218 by separation distance 226 , and P+ diffusion regions 228 .
  • Floating gate 208 of NMOS transistor 202 is coupled to gate 214 of MOS capacitor 204 by what is symbolically shown as interconnect 216 .
  • Non-volatile memory cell 200 operates in a manner similar to that described above in reference to non-volatile memory cell 100 in FIG. 1 .
  • NMOS transistor 202 , MOS capacitor 204 , control gate 206 , floating gate 208 , and source/drain node 210 correspond, respectively, to transistor 102 , capacitor 104 , control gate 106 , floating gate 108 , and source/drain 110 in FIG. 1 .
  • MOS capacitor 204 capacitively couples control gate 206 of non-volatile memory cell 200 to floating gate 208 of NMOS transistor 202 .
  • NMOS transistor 202 can be programmed and erased by hot carrier injection and/or Fowler-Nordheim tunneling, for example, and source/drain node 210 can be used to read out a state of NMOS transistor 202 .
  • non-volatile memory cell 200 utilizes a MOS capacitor, it requires high voltages to program and erase the cell. For this and other reasons, distance 226 must be large enough to provide adequate electrical isolation between NMOS transistor 202 and MOS capacitor 204 , which increases the size of non-volatile memory cell 200 . Since MOS capacitor 204 and NMOS transistor 202 cannot be stacked vertically, the lateral arrangement of the memory cell causes it to occupy a large surface area. Additionally, memory cells utilizing MOS capacitors can suffer from charge leakage through MOS capacitor dielectric 212 , as well as junction leakage from N WELL 224 to substrate 220 .
  • FIG. 3A shows a top view of exemplary non-volatile memory cell 300 in accordance with one embodiment of the present invention.
  • Non-volatile memory cell 300 includes non-volatile memory transistor 302 , for example NMOS transistor 302 , and exemplary metal capacitor 304 situated on substrate 320 , which can be a P type substrate.
  • Non-volatile memory cell 300 further includes control gate 306 , floating gate 308 , first plate 310 of exemplary metal capacitor 304 , second plate 312 of exemplary metal capacitor 304 , interconnect 316 , and N+ diffusion regions 318 .
  • Floating gate 308 can be polycrystalline silicon (also referred to as polysilicon), for example.
  • first and second plates 310 and 312 of metal capacitor 304 are shaped as “combs” 310 and 312 and each comprise comb fingers, such as comb finger 314 of capacitor plate 310 (or capacitor comb 310 ).
  • combs such as comb finger 314 of capacitor plate 310 (or capacitor comb 310 ).
  • other geometries, sizes and shapes can be used to form the plates of metal capacitor 304 .
  • metal capacitor 304 is shown as a parallel plate capacitor laid out in a single metal level
  • metal capacitor 304 can be a parallel plate capacitor with plates laid out in different metal levels.
  • plate 310 can be in metal level one
  • plate 312 can be laid out in metal level two.
  • each plate itself can be laid out in different metal levels and then interconnected, by vias for example, to form a single electrical plate, such as plate 310 .
  • any parallel plate metal capacitor configuration known in the art whether laid out in a single metal level, multiple metal levels, and whether comprising multiple interconnected parallel plates, and formed by any type of metal, such as aluminum, copper, titanium, or metal alloys of various compositions, can be used as metal capacitor 304 in accordance with various embodiments of the present invention.
  • FIG. 3B shows a cross-sectional view of exemplary non-volatile memory cell 300 along line 3 B- 3 B of FIG. 3A .
  • NMOS transistor 302 , metal capacitor 304 , control gate 306 , floating gate 308 , interconnect 316 , N+ diffusion regions 318 , and substrate 320 of FIG. 3B are cross-sectional views of the same elements in FIG. 3A .
  • FIG. 3B also shows transistor gate dielectric 322 (not shown in FIG. 3A ) formed between floating gate 308 and substrate 320 .
  • FIG. 3B shows interlayer dielectric 340 (not shown in FIG. 3A ) upon which metal capacitor 304 is patterned.
  • Interlayer dielectric 340 can comprise any dielectrics typically used in the art, for example, silicon oxide or other dielectrics, including various high-k or low-k dielectrics used in the semiconductor industry.
  • first plate 310 and second plate 312 each have three comb fingers, such as comb finger 314 .
  • any number of comb fingers can be used, and typically a much greater number of comb fingers are used, which are not shown for ease of discussion and illustration.
  • other elements are not shown for ease of discussion and illustration.
  • a gate contact for connecting interconnect 316 to floating gate 308 is not shown in FIG. 3A or 3 B.
  • interconnect 316 is shown as landing directly on and contacting floating gate 308 over gate dielectric 322 , it is understood in the art that the contact is usually made on an “extension” of floating gate 308 that is situated outside source/drain diffusion regions 318 (e.g., on a polysilicon extension situated on a field oxide region outside of source/drain diffusion regions 318 ).
  • control gate 306 of non-volatile memory cell 300 shown as extension 306 of capacitor plate 310 , can be accessed through underlying devices in substrate 320 or overlying metal levels, or from the same metal level in which metal capacitor 304 is formed.
  • contacts, vias, or interconnects accessing control gate 306 are not shown in FIG. 3A or 3 B.
  • Metal capacitor 304 can be situated to one side of NMOS transistor 302 , as shown, or can be situated directly above NMOS transistor 302 . As previously noted, metal capacitor 304 can be patterned and formed as a single-level or a multi-level metal capacitor.
  • a multi-level metal capacitor has a greatly enhanced capacitance density, since it benefits from parallel plate (and fringe) capacitance between the comb fingers of each level, as well as parallel plate (and fringe) capacitance between comb fingers of vertically aligned layers.
  • a multi-level metal capacitor provides a higher capacitance per unit area and can be implemented in a relatively small area of the non-volatile memory cell.
  • a metal capacitor can be achieved without consuming the precious semiconductor surface area, since the metal capacitor occupies space above the surface of the die, where much available and unused space exists.
  • metal capacitors' densities will generally increase and also greater number of metal levels can be used to implement a multi-level metal capacitor, which will automatically result in enhanced capacitance density and consumption of a smaller surface area of the non-volatile memory cell.
  • fabrication of a non-volatile memory cell utilizing a metal capacitor can be achieved without the great expense and the requirements of a specialized double poly process.
  • the conventional problems of charge leakage through a MOS capacitor dielectric and junction leakage between the MOS capacitor well and the substrate present in non-volatile memory cells utilizing MOS capacitors are also eliminated by the invention's novel non-volatile memory cell.
  • metal capacitor 304 capacitively couples control gate 306 of non-volatile memory cell 300 to floating gate 308 of NMOS transistor 302 .
  • NMOS transistor 302 can be programmed and erased by hot carrier injection and/or Fowler-Nordheim tunneling, for example, and source/drain diffusion regions 318 can be used to read a state of NMOS transistor 302 .
  • FIGS. 4A , 4 B, and 4 C illustrate some exemplary configurations utilizing, respectively, non-volatile memory cells 400 A, 400 B, and 400 C.
  • Each non-volatile memory cell 400 A, 400 B, or 400 C utilizes a non-volatile memory transistor, such as non-volatile memory transistor 302 discussed above (shown as non-volatile memory transistors 402 a , 402 b , and 402 c , respectively), along with a metal capacitor, such as metal capacitor 304 and its various embodiments discussed above (shown as metal capacitors 404 a , 404 b , and 404 c , respectively).
  • each exemplary non-volatile memory cell 400 A, 400 B, and 400 C can be implemented, for example, in the same manner that was illustrated and described in relation to FIGS. 3A and 3B .
  • non-volatile memory cell 400 A includes non-volatile memory transistor 402 a , metal capacitor 404 a , control gate 406 a , floating gate 408 a , and source/drain 410 a .
  • Floating gate 408 a of non-volatile memory transistor 402 a is capacitively coupled to control gate 406 a by metal capacitor 404 a .
  • Non-volatile memory transistor 402 a can be an n-channel metal-oxide-semiconductor field-effect transistor (NMOS), for example, such as NMOS transistor 302 of FIG. 3A in one embodiment.
  • NMOS metal-oxide-semiconductor field-effect transistor
  • Metal capacitor 404 a can be configured with metal plates shaped as a comb with multiple comb fingers, for example, such as metal capacitor 304 of FIG. 3A in one embodiment.
  • source/drain 410 a is utilized to sense or read the state of non-volatile memory transistor 402 a.
  • non-volatile memory cell 400 B includes non-volatile memory transistor 402 b , metal capacitor 404 b , control gate 406 b , and floating gate 408 b .
  • Floating gate 408 b of non-volatile memory transistor 402 b is capacitively coupled to control gate 406 b by metal capacitor 404 b .
  • Non-volatile memory transistor 402 b can be an n-channel metal-oxide-semiconductor field-effect transistor (NMOS), for example, such as NMOS transistor 302 of FIG. 3A in one embodiment.
  • Metal capacitor 404 b can be configured with metal plates shaped as a comb with multiple comb fingers, for example, such as metal capacitor 304 of FIG.
  • gate 414 b of readout transistor 416 b is coupled to floating gate 408 b .
  • readout transistor 416 b and in particular source/drain 418 b of the readout transistor, will be used to sense or read the state of non-volatile memory transistor 402 b .
  • FIG. 4A repeated programming and erasing can cause electrical charges to be trapped in the gate dielectric of non-volatile memory transistor 402 a , which can degrade readout reliability.
  • FIG. 4B separating the readout function from the program and erase functions improves reliability at the expense of increasing the size of the memory array.
  • non-volatile memory cell 400 C includes non-volatile memory transistor 402 c , metal capacitor 404 c , control gate 406 c , and floating gate 408 c .
  • Floating gate 408 c of non-volatile memory transistor 402 c is capacitively coupled to control gate 406 c by metal capacitor 404 c .
  • Non-volatile memory transistor 402 c can be an n-channel metal-oxide-semiconductor field-effect transistor (NMOS), for example, such as NMOS transistor 302 of FIG. 3A in one embodiment.
  • Metal capacitor 404 c can be configured with metal plates shaped as a comb with multiple comb fingers, for example, such as metal capacitor 304 of FIG.
  • gate 414 c of readout transistor 416 c is coupled to floating gate 408 c .
  • readout transistor 416 c and in particular source/drain 418 c of the readout transistor, will be used to sense or read the state of non-volatile memory transistor 402 c .
  • gate 422 c of select transistor 420 c is driven by select input 426 c .
  • select input 426 c e.g. a word line in a memory array
  • select input 426 c e.g. a word line in a memory array
  • select transistor 420 c provides an additional capability and flexibility to provide output only from selected non-volatile memory transistors. However, this extra transistor further adds to the size and complexity of configuration 4 C. It is noted that all of the configurations shown in FIGS. 4A , 4 B, and 4 C exhibit and enjoy the advantages resulting from the use of a metal capacitor, instead of a MOS capacitor and in place of using a double poly process, as discussed above in relation to non-volatile memory cell 300 and in relation to FIGS. 3A and 3B .
  • FIG. 5 illustrates a diagram of an exemplary electronic system including an exemplary semiconductor chip or die utilizing one or more non-volatile memory cells in accordance with one embodiment of the present invention.
  • Electronic system 500 includes exemplary modules 502 , 504 , and 506 , IC semiconductor chip 508 , discrete components 510 and 512 , residing in and interconnected through printed circuit board (PCB) 514 .
  • PCB printed circuit board
  • electronic system 500 may include more than one PCB.
  • IC chip 508 includes circuit 516 , which utilizes one or more of the invention's non-volatile memory cells designated by numeral 518 .
  • modules 502 , 504 , and 506 are mounted on PCB 514 and can each be, for example, a central processing unit (CPU), a graphics controller, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a video processing module, an audio processing module, an RF receiver, an RF transmitter, an image sensor module, a power control module, an electro-mechanical motor control module, or a field programmable gate array (FPGA), or any other kind of module utilized in modern electronic circuit boards.
  • PCB 514 can include a number of interconnect traces (not shown in FIG. 5 ) for interconnecting modules 502 , 504 , and 506 , discrete components 510 and 512 , and IC chip 508 .
  • IC chip 508 is mounted on PCB 514 and can be, for example, any chip utilizing an embodiment of the present invention's non-volatile memory cells. In one embodiment, IC chip 508 may not be mounted on PCB 514 , and may be interconnected with other modules on different PCBs. As stated above, circuit 516 is situated in IC chip 508 and includes one or more embodiments of the invention's non-volatile memory cells 518 . Further shown in FIG.
  • discrete components 510 and 512 are mounted on PCB 514 and can each be, for example, a discrete filter, such as one including a BAW or SAW filter or the like, a power amplifier or an operational amplifier, a semiconductor device, such as a transistor or a diode or the like, an antenna element, an inductor, a capacitor, or a resistor.
  • Discrete components 510 and 512 may themselves utilize one embodiment of the invention's non-volatile memory cells.
  • Electronic system 500 can be utilized in, for example, a wired or wireless communications device, a cell phone, a switching device, a router, a repeater, a codec, a LAN, a WLAN, a Bluetooth enabled device, a digital camera, a digital audio player and/or recorder, a digital video player and/or recorder, a computer, a monitor, a television set, a satellite set top box, a cable modem, a digital automotive control system, a digitally-controlled home appliance, a printer, a copier, a digital audio or video receiver, an RF transceiver, a personal digital assistant (PDA), a digital game playing device, a digital testing and/or measuring equipment, a digital avionics device, a medical device, or a digitally-controlled medical equipment, or in any other kind of system, device, component or module utilized in modern electronics applications.
  • PDA personal digital assistant

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
US11/514,029 2006-08-30 2006-08-30 Non-volatile memory cell with metal capacitor Expired - Fee Related US8243510B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US11/514,029 US8243510B2 (en) 2006-08-30 2006-08-30 Non-volatile memory cell with metal capacitor
EP07010405.4A EP1895594B1 (fr) 2006-08-30 2007-05-24 Cellule à mémoire non volatile avec condensateur métallique
CN2007101488489A CN101136412B (zh) 2006-08-30 2007-08-28 具有金属电容器的非易失性存储单元及电子系统
KR1020070087837A KR100886271B1 (ko) 2006-08-30 2007-08-30 메탈 커패시터를 이용한 비휘발성 메모리 셀
TW096132211A TWI466300B (zh) 2006-08-30 2007-08-30 具有金屬電容器的非易失性存儲單元及電子系統
HK08108182.3A HK1119483B (en) 2006-08-30 2008-07-24 Electronic system and non-volatile storage with metalized capacitor

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US11/514,029 US8243510B2 (en) 2006-08-30 2006-08-30 Non-volatile memory cell with metal capacitor

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US20080054331A1 US20080054331A1 (en) 2008-03-06
US8243510B2 true US8243510B2 (en) 2012-08-14

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EP (1) EP1895594B1 (fr)
KR (1) KR100886271B1 (fr)
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US9590059B2 (en) * 2014-12-24 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitor to integrate with flash memory
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EP1895594A3 (fr) 2009-03-18
TW200832721A (en) 2008-08-01
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EP1895594B1 (fr) 2015-12-23
TWI466300B (zh) 2014-12-21

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