WO1987004854A3 - Procede epitaxial liquide pour la fabrication de structures semi-conductrices en trois dimensions - Google Patents

Procede epitaxial liquide pour la fabrication de structures semi-conductrices en trois dimensions Download PDF

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Publication number
WO1987004854A3
WO1987004854A3 PCT/EP1987/000064 EP8700064W WO8704854A3 WO 1987004854 A3 WO1987004854 A3 WO 1987004854A3 EP 8700064 W EP8700064 W EP 8700064W WO 8704854 A3 WO8704854 A3 WO 8704854A3
Authority
WO
WIPO (PCT)
Prior art keywords
monocrystalline
semiconductor structures
dimensional semiconductor
openings
epitaxial process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP1987/000064
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German (de)
English (en)
Other versions
WO1987004854A2 (fr
Inventor
Elisabeth Bauser
Horst Paul Strunk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of WO1987004854A2 publication Critical patent/WO1987004854A2/fr
Publication of WO1987004854A3 publication Critical patent/WO1987004854A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Le procédé ci-décrit permet de produire des couches semi-conductrices monocristallines d'une haute perfection cristalline dans une configuration multicouche sur des couches intermédiaires en matériau isolant et/ou en carbone et/ou en métal, en vue de fabriquer des structures semi-conductrices en trois dimensions, lesquelles présentent de faibles contraintes mécaniques et des densités de porteur de charge comprises entre 1014 et 1021 ou cm3. On peut travailler avec des températures de fabrication très faibles, comprises par ex. entre 300 et 900°C. L'ensemencement pour chaque couche épitaxiale s'effectue dans les ouvertures de la couche intermédiaire où se trouve à l'état libre une matière monocristalline. A partir de ces ouvertures s'opère la croissance latérale et monocristalline des couches intermédiaires. L'application répétée du procédé épitaxial liquide ci-décrit permet une intégration en trois dimensions dans des structures multicouches monocristallines très largement exemptes de défauts.
PCT/EP1987/000064 1986-02-11 1987-02-11 Procede epitaxial liquide pour la fabrication de structures semi-conductrices en trois dimensions Ceased WO1987004854A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3604260.9 1986-02-11
DE19863604260 DE3604260A1 (de) 1986-02-11 1986-02-11 Fluessigkeitsepitaxieverfahren

Publications (2)

Publication Number Publication Date
WO1987004854A2 WO1987004854A2 (fr) 1987-08-13
WO1987004854A3 true WO1987004854A3 (fr) 1988-03-24

Family

ID=6293866

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1987/000064 Ceased WO1987004854A2 (fr) 1986-02-11 1987-02-11 Procede epitaxial liquide pour la fabrication de structures semi-conductrices en trois dimensions

Country Status (4)

Country Link
EP (1) EP0255837A1 (fr)
JP (1) JPS63502472A (fr)
DE (1) DE3604260A1 (fr)
WO (1) WO1987004854A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863877A (en) * 1987-11-13 1989-09-05 Kopin Corporation Ion implantation and annealing of compound semiconductor layers
US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
FR2629636B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
JP3016432B2 (ja) * 1989-09-21 2000-03-06 沖電気工業株式会社 半導体基板の製造方法
US5796119A (en) * 1993-10-29 1998-08-18 Texas Instruments Incorporated Silicon resonant tunneling

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028147A (en) * 1974-12-06 1977-06-07 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating GaAs layers
EP0143957A1 (fr) * 1983-10-28 1985-06-12 Siemens Aktiengesellschaft Procédé de fabrication de diodes électroluminescentes A3B5
US4551394A (en) * 1984-11-26 1985-11-05 Honeywell Inc. Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126048A (en) * 1975-01-31 1976-11-02 Hitachi Ltd Hetero epitaxial growth method of iii-v group semi-conductors
JPS51138180A (en) * 1975-05-26 1976-11-29 Nippon Telegr & Teleph Corp <Ntt> Distributed feedback type semi-conductor laser and the method of manuf acturing it
JPS6040719B2 (ja) * 1979-03-30 1985-09-12 松下電器産業株式会社 半導体レ−ザ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028147A (en) * 1974-12-06 1977-06-07 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating GaAs layers
EP0143957A1 (fr) * 1983-10-28 1985-06-12 Siemens Aktiengesellschaft Procédé de fabrication de diodes électroluminescentes A3B5
US4551394A (en) * 1984-11-26 1985-11-05 Honeywell Inc. Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, Band 38, Nr. 5, Marz 1981, (New York, US), P.C. CHEN et al.: "Embedded Epitaxial Growth of Low-Threshold GaInAsP/InP Injection Lasers", seiten 301-303 siehe das ganze dokument *
IBM Technical Disclosure Bulletin, Band 15. Nr. 3, August 1972, (New York, US), J.M. BLUM et al.: "Integrated Light Emitting pnpn and npn Devices", seiten 951-952 siehe das ganze dokument *
Japanese Journal of Applied Physics, Band 6, Nr. 7, Juli 1967, (Tokyo, JP), T. NAKANO: "Preparation and Properties of GaAs-Si Heterofunctions By Solution Growth Method", seiten 854-863 *
Journal of the Electrochemical Society, Band 12., Nr. 12, Dezember 1982, (Manchester, New Hampshire, US), B. Jayant Baliga: "Refilling Silicon Grooves by Liquid Phase Epitaxy", seiten 2819-2823 siehe seiten 2820-2822: "Experimental Procedure and results", abbildungen 1-10 *
Journal of the Electrochemical Society, Band 133, Nr. 1, Januar 1986, (Manchester, New Hampshire, US), B. JAYANT BALIGA: "Silicon Liquid Phase Epitaxy", Seiten 5C-14C siehe abschitt: "Apparatus and Experimental Procedure"; seite 9C; abschnitt: "Epixal Refill"; seiten 12C-13C; abbildungen 12-14 *
Solid State Technology, Band 27, Nr. 9, September 1984, (Port Washington, New York, US), L. JASTRZEBSKI: "Silicon CUD for SOI: Priciples and Possible Applications", seiten 239-243 *

Also Published As

Publication number Publication date
DE3604260A1 (de) 1987-08-13
JPS63502472A (ja) 1988-09-14
WO1987004854A2 (fr) 1987-08-13
EP0255837A1 (fr) 1988-02-17

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