WO1992014689A1 - Materiau dur a revetement en diamant, pointe a jeter et procede de fabrication de ce materiau et de cette pointe - Google Patents

Materiau dur a revetement en diamant, pointe a jeter et procede de fabrication de ce materiau et de cette pointe Download PDF

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Publication number
WO1992014689A1
WO1992014689A1 PCT/JP1991/001542 JP9101542W WO9214689A1 WO 1992014689 A1 WO1992014689 A1 WO 1992014689A1 JP 9101542 W JP9101542 W JP 9101542W WO 9214689 A1 WO9214689 A1 WO 9214689A1
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WO
WIPO (PCT)
Prior art keywords
diamond
chip
coated
coating layer
sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1991/001542
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English (en)
Japanese (ja)
Inventor
Naoya Omori
Toshio Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3023495A external-priority patent/JP2987955B2/ja
Priority claimed from JP3023496A external-priority patent/JP2987956B2/ja
Priority claimed from PCT/JP1991/001359 external-priority patent/WO1992005904A1/fr
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of WO1992014689A1 publication Critical patent/WO1992014689A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5001—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with carbon or carbonisable materials
    • C04B41/5002—Diamond
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges

Definitions

  • the present invention provides a diamond coated hard material having high adhesion strength to a high base material and various light alloys such as A1-si alloy which can be cut at a high speed for a long time. It is intended to be applied to the throw-away tip.
  • Diamonds are extremely hard, chemically stable, and have many excellent properties, including high thermal conductivity and sonic velocity.
  • the following materials are widely used in the Yang River, for example, as a hard U material that takes advantage of its characteristics, or as a diamond or a diamond-coated coal-coated S-hardened material. .
  • the methods for forming a diamond coating layer from the gas phase include wave plasma CVD, RF-plasma CVD, and EA.
  • CVD induced magnetic field / z-wave plasma CVD
  • RF thermal plasma CVD RF thermal plasma CVD
  • DC plasma CVD DC plasma CVD
  • filament thermal CVD combustion
  • combustion A number of methods are known, and are an effective method for producing diamond coated hard U materials.
  • -As a surface coating tool, carbides, nitrides, carbonitrides and oxides of A1 oxides of Ti, I, Zr are formed on the surface of cemented carbide-based neo by PVD or CVD.
  • a metabolic slope that forms a stratum or an exorcism is widely available to the public.
  • Diamond is an extremely stable substance, does not form any substance and compound, and the diamond coating calendar and the base material are bonded by intermolecular attraction. Conceivable. The molecular IH1 attraction has a lower adhesion strength to the substrate than a coating layer that is bonded by forming a chemical compound. ,
  • Japanese Patent Application Laid-Open No. 61-214943 discloses a sintered material containing Si 3 N 4 as a main component. It proposes a sintering bath consisting mainly of body and SiC. By using these, the separation phenomenon of the diamond coating layer due to thermal residual stress was not seen, but there was still PrH S of surface treatment, and At present, there is no diamond covering calendar with sufficient adhesion strength to the base metal.
  • the inventors of the present invention found that the metabolism of the substrate As a result of repeated research focusing on the deformation, the base material was molded and sintered using a mixed powder containing Si 3 N ⁇ as the main component. It was found that the film had a high adhesion strength when the yam coating layer was formed, and reached the present invention.
  • the present inventors conducted a heat treatment again on the base material once ground after sintering, so that the surface state became a sintered surface before grinding (hereinafter referred to as a heat-treated surface). Even when the diamond coating layer is formed, high adhesion strength is maintained as before. I saw the thing.
  • the tree Hatsu ⁇ is (1) S i, of Shoyuikyu mainly composed of N 4, least for the even 1- parts are tempered - and Yuihada, the portion of the ⁇ Yuihada also small instrument A diamond-coated hard material coated with a diamond and (2) a metamaterial of a slow-way base material mainly composed of Si 3 N 4
  • the diamond or the diamond-like carbon which has been exposed to the gas phase has a thickness of 0.1 to 200 // m.
  • the diamond is placed on the surface of a part of the base material, or the whole surface, of the lower surface base material whose surface is made of sintered surface.
  • the present invention provides a diamond-coated slow-exposure characterized by having a coating layer of a diamond or diamond-like carbon.
  • FIG. 1 is a conceptual diagram schematically showing the state of the covering layer of the wood invention and the substrate.
  • FIG. 2 is a conceptual diagram schematically showing the state of the coating layer-substrate interface of the present invention.
  • FIG. 3 is an explanatory diagram nj] in which the state shown in FIG. 2 is simulated as a straight line.
  • Figures 4 and 4 are conceptual diagrams showing an example of the cutting edge processing performed in the embodiment.
  • the present inventor further proposes that a mechanical or chemical
  • the base material is formed on the surface of the substrate, and a diamond coating layer is formed on the surface of the base material. It has been discovered that the adhesion strength between the diamond coating layer and the base material is very high when the state penetrates the diamond coating layer. This is due to the fact that the contact area between the diamond coating layer and the base material has been increased, the projections have an effect of anchoring the diamond coating layer, and the diamond coating layer has a negative effect. It is thought that it became difficult to be.
  • the irregularities described here are not microscopic irregularities formed by (I) a diamond grinding wheel, (2) a scratching process using diamond abrasive grains, or the like, but rather microscopic irregularities.
  • R5I is a concave-convex shape.In the diamond coating layer, the base length is a minute section, such as 10 ⁇ m, in the base material. It is.
  • the present inventors have found that a beam having various concave and convex states has at least one or more convex portions within a reference length of 10 m and at least one convex portion within a standard length of 10 m.
  • the ratio of the total length B of the convex portions to the total length A of the concave portions is 0.05 ⁇ AZB20, and the convex portions correspond to the width of the diamond coating layer. It was discovered that the state of penetration of 0.2 mm or more increased the adhesion strength. This was calculated by wrapping the cross section of the base after diamond coating, observing and photographing, and modeling the state of the diamond coating layer and substrate.
  • Diamond and Z or Diamond Fig. 1 schematically shows the state of a single carbon substrate layer.
  • the sum A of the lengths of the protrusions that is, the sum B of the lengths of the recesses and the sum B of the lengths of the recesses, that is, the ratio of ⁇ B must be 0.05 ⁇ A / B ⁇ 20.
  • the projections formed in this way have a reference length at the interface between the diamond and / or the diamond-like carbon coating. Is set to 10 m, there are at least one or more locations within this reference length, and the ratio of the total length B of the convex portions to the total length A of the concave portions is 0.05. In this case, if it is necessary to be in the range BH of 20 or less, and the convex must penetrate into the diamond coating layer, the penetration length is 0.2. It is preferably at least u.m. If the ratio of the total length B of the convex portions to the total length A of the concave portions deviates from the range of 0.05 ⁇ A / B ⁇ 20, no improvement in adhesion strength is observed.
  • the meta-roughness at the boundary was 1 at R max. It was discovered that the contact strength was higher in the state between 5 and 30 ⁇ m.
  • This metaphysical value can be determined by observing the cross section of the substrate after the diamond coating after rubbing, photographing, and taking an image of the interface between the diamond coating layer and the substrate. of The boundary is defined as the metaphysical value (R max) of the coated substrate.
  • FIG. 2 schematically shows the state of the diamond and / or diamond-like carbon coating layer-substrate interface according to the present invention. That is, although macroscopic undulation is recognized in the field, Rmax is calculated by regarding this as a pseudo straight line as shown in FIG.
  • the convex portion formed in the earthenware pots good This is die algicidal down de and / / or die algicidal down de, in Fushimi carbon coating ⁇ one substrate boundaries
  • the reference length a When 50 u rn is used, it is necessary that within this reference length, the degree of filtration at the interface of the base material is 1.0 to 30 zm at R max. It is preferable that the protrusion penetrates into the diamond coating layer with a penetration length of 0.2 ⁇ rn or more. When the roughness at the substrate interface was less than 1.0 in R max, no improvement in adhesion strength was observed, and when it exceeded 30 m, a decrease in adhesion strength was observed. As a specific method of making unevenness in the material,
  • Base 1 A method of applying a mask to a young person, etching, and then removing the mask.
  • the base material is subjected to some kind of heat treatment, and columnar or acicular crystals are freely grown on the surface, depending on the base material components, and / or secondary crystals.
  • the method (2) is effective for the material that is formed by the addition of corrosive hard fouling to acids and alkalis and the ffl, and the method (3) is effective.
  • This is a method in which a mask is provided on an arbitrary pattern using a photomask, and then the mask is removed by etching.
  • the reason why the hard material whose main component is Si 3 N ⁇ was selected as the base material is as follows: (1) The thermal expansion coefficient of Si 3 N 4 is close to that of a diamond. (2) Furthermore, it is produced by molding and sintering a mixed powder mainly composed of Si 3 N ⁇ . Since the columnar crystal structure of Si 3 N ⁇ grows on the surface of the base material, coarse columnar crystals are present, and the state where the base surface is uneven by the method (1) described above. Because it can be easily made. The following two effects can be considered as the effects of the presence of the self-grown columnar structure.1) Coarse columnar structure due to the free growth of the metamorphic Si 3 N 4 columnar crystal structure It becomes a crystal. For this reason, the surface has irregularities as compared to the ground surface, and the contact between the base material and the diamond coating phase increases.
  • a general diamond diamond grinding process is used to promote the generation of diamond nuclei during the entire chip display. Is desirable.
  • the formed protrusions may be broken or broken, so the base material and the diamond abrasive grains may be washed with water.
  • the solution is injected into a solvent such as ethyl alcohol or acetone and the solution is subjected to ultrasonic vibration to perform a damaging treatment.
  • a solvent such as ethyl alcohol or acetone
  • ⁇ - Si 3 N 4 was used as a main component Si 3 N 4 powder containing 50% or more, A 1 2 0 3, Y 2 0 3, MgO A1N, Si0 2 or we selected one or more even and rather low sintering aid ⁇ .
  • meter 1 ⁇ 5 0 t3 ⁇ 4 also of the desired by sintering mixed powder containing arbitrariness.
  • the strength of the sintering itself will be reduced, so that 50 wt% or less is desirable.
  • a hardened material such as Ti carbides, nitrides, various compounds such as nitrides, borohydrides, and the like, or It goes without saying that additives that improve high-temperature properties such as ZrO 2 and HfO 2 can be added.
  • Atmosphere (For gaseous gas, for gaseous gases, Si decomposes except for N 2 gas. At 1 atm or less, Si 3 N 4 decomposes and 3000 atm Since it is difficult to commercialize the above, it is desirable to use a N 2 gas atmosphere of 300 atm.
  • the firing time if the time is less than 30 minutes, the densification of the crystal grains is insufficient, and if the time is more than 5 hours, the crystal grains become coarse and the strength is reduced. Min ⁇ 5 o'clock GH of R51 is good.
  • Coating on the sintered surface is, from an economic point of view, a grinding process.
  • the manufacturing cost / 11 can be reduced by the amount of processing cost.
  • the diamond-coated hard material obtained in this way can be used as a slow-through, micro-drill, micro-drill, end-roll, end-roll, or It can cover a wide range of mechanical parts such as reamers, shochu tools, bonding tools, whetstones, dressers and printer heads. .
  • the average major axis of the columnar crystals is 1.5 or less, and if there is no casting with a major axis of more than 2 inches, the improvement of the diamond membrane adhesion is not improved. I can't stop it.
  • the layer thickness when the thickness is 0.1 ⁇ m or less, no improvement in the abrasion resistance due to the coating layer is observed, and when the coating layer has a thickness of 200 fm or more. No significant improvement in abrasion is observed anymore, so it is not suitable for hard material or as a slender tip. M of 0 um is good.
  • the coating layer is a diamond, but the diamond coating is not included in the diamond coating layer.
  • Including diamonds with carbon-like carbon and other crystalline structures, and those composed of more than one of these calendars or multilayers The same effect can be obtained when the effect is recognized and the diamond coating or the diamond-like carbon coating layer contains different kinds of atoms such as boron and nitrogen.
  • the upper surface of the slider is a rake surface
  • the lower surface is a surface facing the upper surface
  • composition Si 3 N ⁇ S i 3 in Serra Mi click (specifically the base N * - 4 wt% A 1 2 03 - 4 wt% Z r 0 2 - 3 wt% Y 2 0 3 ) Sinter the mixed powder for 1 lir in an atmosphere of N 2 gas at 1800 T; at 5 atm to form a SPG422 shaped lower way chip on the material surface.
  • Fig. 4 shows a schematic diagram of the tip processing of the chip.
  • a is the negative land
  • 3 is the escape
  • 3 ⁇ 4 is the negative land width
  • cr is 25 °, respectively
  • 3 is 11 ° and 0.05 mm. I. 2.
  • the above-mentioned chip was subjected to up-and-down movement and escape, and the above-mentioned 0.05 x 25 was used.
  • a chip was prepared with the NL cutting edge treatment. At this time, it was confirmed that no columnar crystal structure was present on the surface of the ground surface of the throw-away chip. This switch-up the 1700 'C ;, 5 atm N 2 gas Kiri 1 in four gas-hr, was One row of the heat treatment,
  • a chip with only the edge treatment (hereinafter referred to as NL surface) ground and heat treated skin for both the escape and rake surfaces
  • the ground surface of the throw-away chip in which no columnar grain structure was observed before heat treatment, showed a Si with an average minor axis of 1.5 nm and an average major axis of 3 fim. 3 pillars Fushimi crystal structure of N 4 was observed.
  • a comparative chip 1 having the same shape and the same composition, ground on the upper and lower surfaces and the relief, and having been subjected to the above-mentioned edge treatment, and a diamond coating layer were applied thereto.
  • the prepared comparison chip 2 was prepared.
  • the coating calendar deposited on the surface of the substrate was analyzed by Raman spectroscopy to determine the characteristics of the diamond and / or diamond-1 carbon coating layer. It was confirmed that a peak was observed at 133 3 cnr '. 1
  • silicon nitride group As a base material, silicon nitride group: a cell La Mi click (rest thereof include A composition: S i 3 N 4 one 4 wt% A 1 2 03 - 4 wt% Z r 02 - 3 t% Y 2 03 B composition: S i 3 N 4 - was prepared 5 wt% Y 2 0 3) in the form of SPG 422 scan B over-away Chi Tsu Bed - 2 t% AI 2 0 3 . This chip was heat-treated under the conditions shown in Table 3. Table 3 also shows the state of the columnar crystals generated at that time. Here, chips 9 and 10 of the present invention are out of the range CH of the present invention.
  • Table 3 shows the results of observations of the amount of escape wear, the wear of the cutting edge, and the welded state of the work material after 3 and 10 minutes. It was shown to.
  • the present invention can be applied not only to the throw-away tool but also to various cutting tools and TAB tools such as drill drills, micro-driners, end-minoles, rimmers, and knives. It can be applied to wear-resistant tools such as casters, cabriolets, various grinding wheels, and mechanical parts.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)

Abstract

L'invention se rapporte à un matériau dur à revêtement en diamant, qui se caractérise par une forte adhérence au matériau de base, ainsi qu'à une pointe à jeter à revêtement en diamant capable decouper divers types de métaux légers, par exemple des alliages Al-Si, à des vitesses élevées pendant une longue période. Le matériau dur à revêtement en diamant se compose d'un matériau à fritter qui est constitué essentiellement de Si3N4, qui est fritté sur une partie au moins de son enveloppe et qui est recouvert de diamant au moins sur la partie de son enveloppe frittée; et la pointe à jeter se compose d'un matériau de base constitué essentiellement de Si3N4 et recouvert d'une couche épaisse de 0,1 à 200 νm d'un diamant ou/et d'un carbone de type diamant séparé de la phase vapeur. Un tel matériau se caractérise en ce qu'il est recouvert partiellement ou entièrement sur l'enveloppe frittée de la surface du matériau de base au moyen d'une couche de diamant ou/et de carbone de type diamant, pour permettre une production utile de l'objet.
PCT/JP1991/001542 1991-02-18 1991-11-11 Materiau dur a revetement en diamant, pointe a jeter et procede de fabrication de ce materiau et de cette pointe Ceased WO1992014689A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP3/23496 1991-02-18
JP3023495A JP2987955B2 (ja) 1991-02-18 1991-02-18 ダイヤモンドまたはダイヤモンド状炭素被覆硬質材料
JP3023496A JP2987956B2 (ja) 1991-02-18 1991-02-18 ダイヤモンドまたはダイヤモンド状炭素被覆硬質材料
JP3/23495 1991-02-18
PCT/JP1991/001359 WO1992005904A1 (fr) 1990-10-05 1991-10-04 Materiau dur revetu de diamant, plaquette jetable, et procede pour fabriquer ledit materiau de ladite plaquette
JPPCT/JP91/01359 1991-10-04

Publications (1)

Publication Number Publication Date
WO1992014689A1 true WO1992014689A1 (fr) 1992-09-03

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PCT/JP1991/001542 Ceased WO1992014689A1 (fr) 1991-02-18 1991-11-11 Materiau dur a revetement en diamant, pointe a jeter et procede de fabrication de ce materiau et de cette pointe

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111908935B (zh) * 2020-01-19 2022-12-09 湖南碳康生物科技有限公司 一种碳基复合材料接骨螺钉及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60122785A (ja) * 1983-12-08 1985-07-01 三菱マテリアル株式会社 ダイヤモンド被覆工具部材
JPS61124573A (ja) * 1984-11-21 1986-06-12 Toshiba Tungaloy Co Ltd ダイヤモンド被覆基材及びその製造方法
JPS61291493A (ja) * 1985-06-14 1986-12-22 Sumitomo Electric Ind Ltd ダイヤモンド被覆硬質材料
JPH02275788A (ja) * 1989-01-20 1990-11-09 Idemitsu Petrochem Co Ltd ダイヤモンド被覆部材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60122785A (ja) * 1983-12-08 1985-07-01 三菱マテリアル株式会社 ダイヤモンド被覆工具部材
JPS61124573A (ja) * 1984-11-21 1986-06-12 Toshiba Tungaloy Co Ltd ダイヤモンド被覆基材及びその製造方法
JPS61291493A (ja) * 1985-06-14 1986-12-22 Sumitomo Electric Ind Ltd ダイヤモンド被覆硬質材料
JPH02275788A (ja) * 1989-01-20 1990-11-09 Idemitsu Petrochem Co Ltd ダイヤモンド被覆部材

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CA2074482C (fr) 1995-08-22

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