WO1994018695A1 - Appareil de traitement thermique - Google Patents

Appareil de traitement thermique Download PDF

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Publication number
WO1994018695A1
WO1994018695A1 PCT/JP1993/000146 JP9300146W WO9418695A1 WO 1994018695 A1 WO1994018695 A1 WO 1994018695A1 JP 9300146 W JP9300146 W JP 9300146W WO 9418695 A1 WO9418695 A1 WO 9418695A1
Authority
WO
WIPO (PCT)
Prior art keywords
reaction chamber
flange
moving mechanism
chamber
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1993/000146
Other languages
English (en)
Japanese (ja)
Inventor
Mitsusuke Kyogoku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM Japan KK
Original Assignee
ASM Japan KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM Japan KK filed Critical ASM Japan KK
Priority to EP93903315A priority Critical patent/EP0635875B1/fr
Priority to PCT/JP1993/000146 priority patent/WO1994018695A1/fr
Priority to KR1019930703897A priority patent/KR100270422B1/ko
Priority to DE69307136T priority patent/DE69307136T2/de
Priority to US08/192,147 priority patent/US5484483A/en
Priority claimed from US08/192,147 external-priority patent/US5484483A/en
Publication of WO1994018695A1 publication Critical patent/WO1994018695A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0073—Seals

Definitions

  • the present invention relates to a semiconductor manufacturing apparatus, particularly to an oxidation / diffusion apparatus.
  • Figures 1a and 1b and Figures 2a and 2b show a conventional vertical heat treatment apparatus and a conventional load-lock heat treatment apparatus that perform the oxidation and diffusion processes at normal pressure.
  • a heating element (2) is provided around the reaction chamber (1) made of high-purity material such as quartz, and one open end of the reaction chamber (1) is moved by a moving mechanism (not shown). Sealed by a sealed flange.
  • the moving body and the seal flange, which are moved by the moving mechanism, are connected by a panel body to improve the sealing between the seal flange and the reaction chamber. Since the pressure inside the reaction chamber and the external pressure during the process are almost the same, it is sufficient for the panel body to have a repulsive force enough to lightly press the sealing flange through the sealing material in the reaction chamber.
  • the seal flange is composed of a quartz flange (9) and a metal flange (10). When the reaction chamber is sealed, only the quartz flange is exposed inside the chamber.
  • the reaction chamber (1) is provided with a gas inlet (6), which runs along the outer side wall of the chamber to one closed end of the reaction chamber, from which the gas enters the chamber. Is introduced.
  • a gas exhaust port (7) is provided at one open end of the reaction chamber 1 from which gas is exhausted.
  • a boat (3) and a boat table (5) holding a plurality of heat-treated bodies (4) in a stacked state are provided on the seal flange. Insertion and removal are performed inside the member.
  • the object to be heat-treated is set on the boat.
  • the moving mechanism moves the boat into the reaction chamber, seals the flange, and seals the inside of the reaction chamber.
  • An inert gas such as nitrogen gas is introduced from the gas inlet, and purges air components that enter during the movement of the boat into the chamber.
  • a predetermined process gas is introduced. In the dry oxidation process, oxygen and the like are generated, and in the wet oxidation process, steam and the like generated by burning oxygen and hydrogen in an external combustion device (not shown) provided in front of the inlet (6).
  • phosphorus oxychloride (POCl 3 ) or the like is introduced.
  • the inner diameter of the inlet is usually from 10 mm to 20 mm.
  • the exhaust port (7) is open to the atmospheric pressure atmosphere, and the introduced gas is discharged from the exhaust port so as to be pushed out after contributing to a predetermined reaction.
  • the inner diameter of the exhaust port is usually several 10 mm to 20 several mm, and is often larger than the inner diameter of the inlet.
  • FIGS. 2a and 2b show examples.
  • a moving mechanism composed of a ball screw (13), a moving body (12) and the like is placed inside the moving mechanism housing chamber (11) for sealing from the atmosphere.
  • the moving mechanism storage chamber 1 (11) has an exhaust port (15) for evacuating the inside.
  • An opening (14) for inserting and taking out the object to be heat-treated is provided in the moving mechanism housing chamber (11), and is connected to the front chamber (17) via a gate valve (16).
  • the front room houses a transfer mechanism for inserting and removing the object to be heat-treated from the opening into the boat.
  • a metal manifold (23) having an exhaust port (7b) is connected to the reaction chamber 1 to evacuate the inside of the reaction chamber made of high-purity material such as quartz, and the manifold is cooled. (23b). After the process is completed, the inside of the boat is evacuated to about 10 to 6 Torr by a vacuum exhaust device connected to the exhaust port (7b), and then the boat is unloaded to take out the object to be heat-treated.
  • a metal manifold is provided to evacuate the inside of the reaction chamber. This causes heavy metal contamination of the object to be heat-treated, fighting this point, and deteriorating the performance of the equipment. Since the oxidation process is usually performed at a high temperature of around 100,000, the effect of the radiant heat is significant. Even if a cooling unit is provided, it is inevitable that metal contamination becomes significantly larger than in a conventional oxidation diffusion apparatus in which the entire inner surface of the reaction chamber is made of quartz. If the cooling is excessive, water vapor or the like will be condensed on the inner surface of the manifold during wet oxidation, causing even more serious problems such as metal corrosion.
  • the radiating heat from the lower part of the heating element increases due to the cooling, and the heat equalizing characteristic of the heating element deteriorates.
  • the cleanliness of the atmosphere in the apparatus has a limit depending on the purity of the supplied nitrogen gas and the cleanliness of the gas supply system.
  • the pressure in the transfer mechanism storage chamber should be constantly reduced to a high vacuum atmosphere of 10 to 7 Torr or less in order to further reduce the concentration of residual oxygen and water vapor. Need to be kept.
  • the atmosphere in the moving mechanism storage chamber was set to normal pressure with nitrogen gas, and the system was evacuated after the process was completed. Cost of high-purity nitrogen gas increases.
  • An exhaust port for evacuating the inside of the reaction chamber is provided in the reaction chamber, and the seal flange has a double structure of a quartz flange and a metal flange, and when the metal flange is at the movement limit position, The seal is formed between the reaction chamber and the quartz flange via a seal material.
  • the size of the repulsive force generated by moving the moving body after the seal flange moves to the sealing position by connecting the seal flange and the moving body with the panel body
  • the moving body is moved and stopped so that the force applied to the seal flange from one side of the reaction chamber is equal to or greater than the pressure applied.
  • Figure 1a shows a conventional heat treatment apparatus.
  • Figure lb shows a conventional vertical heat treatment apparatus with the boat table taken out of the reaction chamber.
  • Fig. 2a shows a conventional load-lock type ripening device.
  • Figure 2b shows a conventional load-lock type heat treatment apparatus with the boat table taken out of the reaction chamber.
  • FIG. 3 is an overall view of an apparatus showing the present invention.
  • FIG. 4a is a partially enlarged view of the device shown in FIG.
  • FIG. 4b is a partially enlarged view of the device shown in FIG.
  • FIG. 4c is a partially enlarged view of another embodiment.
  • FIG. 3 is an overall view of an apparatus showing one embodiment of the present invention.
  • FIG. 4a is a partially enlarged view of FIG.
  • An exhaust port (7) for evacuating the inside of the reaction chamber (1) is provided.
  • the inner diameter of the exhaust port (7) needs to be at least about 50 mm or more in order to make a high vacuum inside the reaction chamber in a short time.
  • the inner diameter of the reaction chamber is 240 mm, and the inner diameter of the exhaust port is 100 Omm. It may be provided separately, or may be branched at the end of the exhaust port (7).
  • a heat insulating material (8) is attached around the reaction chamber around the exhaust port (7) to prevent heat from escaping from this part, improve the uniformity of the heating element, and reduce the temperature inside the reaction chamber. ⁇ Tsu DOO steam during the oxidation process is maintained at a temperature of not condensation inside D
  • the quartz flange (9) on which the boat (3) and the boat table (5) are placed It is placed on a metal flange (10) and moved by a moving mechanism.
  • the shoulder of the metal flange (10) comes into contact with the shoulder (11) of the moving mechanism storage chamber and cannot move any further.
  • the moving body (12) is further moved to become the dimension "B".
  • the repulsive force of the panel body which is the product of the panel constant of panel body (30) and the amount of compression "A-B"
  • the metal flange (10) is the moving mechanism storage chamber (11). Is pressed against the shoulder. In this state, a normal pressure process is performed in the reaction chamber while the transfer mechanism storage chamber 1 is kept at a vacuum.
  • a force having a magnitude obtained by multiplying the pressure difference between the two chambers by the area within the effective diameter of the seal member (18) is applied to the seal flange from one side of the mobile device oval storage chamber.
  • the spring constant of the panel body and the amount of compression “A-B” are determined so that the repulsive force of the spring body is greater than the magnitude of this force. Even if a force due to the pressure difference is applied from above, the metal flange (10) acts as reinforcement against the quartz flange (9), so that the quartz flange (9) is not damaged. In the case of (10), since the force applied from the one side of the mobile machine fine storage chamber is greater than the force applied from the lower side by the spring body, it is not moved downward.
  • the flange at the end of the reaction chamber (1) is mounted on the moving mechanism storage chamber (11) via a seal material (19a) and a buffer material (21a).
  • the cooling section may be provided on the moving mechanism storage chamber side.
  • FIG. 4c is a partially enlarged view showing another embodiment.
  • the reaction chamber 1 (1) is formed in a tubular shape to the lower side from the flange portion, the inner diameter is widened near the end portion, and the end portion is sealed. This refracts the heat energy transmitted by the light beam inside the transparent quartz and reduces the effect of heat on the seal material (18).
  • the flange portion of the first reaction chamber (1) is fixed on a flange (22) having a cooling means (22b), and the flange (22) is fixed on a moving mechanism housing chamber (11).

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)

Abstract

Appareil de traitement thermique pouvant empêcher la contamination métallique de l'objet traité grâce à un distributeur métallique, et assurant de manière fiable la séparation hermétique entre une chambre de stockage à mécanisme mobile et une chambre réactionnelle, cela même lorsque la pression dans la première chambre est sensiblement inférieure à celle dans cette dernière chambre. Un orifice d'évacuation (7) est prévu dans la chambre réactionnelle à quartz (1) afin d'évacuer l'intérieur de cette chambre (1), et une bride d'étanchéité à structure double est formée d'une bride à quartz (9) et d'une bride métallique (10). Lorsque la chambre réactionnelle est à l'état hermétique, la bride métallique (1) n'est pas exposée à la chambre réactionnelle (1). Par ailleurs, la bride d'étanchéité (10) se place en position de fermeture hermétique, les ressorts, actionnés par le corps mobile, sollicitent la bride d'étanchéité contre la pression interne de la chambre réactionnelle.
PCT/JP1993/000146 1993-02-05 1993-02-05 Appareil de traitement thermique Ceased WO1994018695A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP93903315A EP0635875B1 (fr) 1993-02-05 1993-02-05 Appareil de traitement thermique
PCT/JP1993/000146 WO1994018695A1 (fr) 1993-02-05 1993-02-05 Appareil de traitement thermique
KR1019930703897A KR100270422B1 (ko) 1993-02-05 1993-02-05 열처리 장치
DE69307136T DE69307136T2 (de) 1993-02-05 1993-02-05 Anordnung zur thermischen behandlung.
US08/192,147 US5484483A (en) 1993-02-05 1994-02-04 Thermal treatment apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP1993/000146 WO1994018695A1 (fr) 1993-02-05 1993-02-05 Appareil de traitement thermique
US08/192,147 US5484483A (en) 1993-02-05 1994-02-04 Thermal treatment apparatus

Publications (1)

Publication Number Publication Date
WO1994018695A1 true WO1994018695A1 (fr) 1994-08-18

Family

ID=26434372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1993/000146 Ceased WO1994018695A1 (fr) 1993-02-05 1993-02-05 Appareil de traitement thermique

Country Status (1)

Country Link
WO (1) WO1994018695A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353210A (ja) * 2001-05-25 2002-12-06 Tokyo Electron Ltd 熱処理装置および熱処理方法
JP3501601B2 (ja) 1996-10-31 2004-03-02 東京エレクトロン株式会社 縦型熱処理装置およその熱処理炉のメンテナンス方法
KR100431657B1 (ko) * 2001-09-25 2004-05-17 삼성전자주식회사 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63161612A (ja) * 1986-12-25 1988-07-05 Toshiba Ceramics Co Ltd 縦型炉
JPS63177426A (ja) * 1987-01-17 1988-07-21 Oki Electric Ind Co Ltd 気相成長方法及び装置
JPH01251610A (ja) * 1987-11-27 1989-10-06 Tel Sagami Ltd 熱処理装置
JPH0448725A (ja) * 1990-06-15 1992-02-18 Kokusai Electric Co Ltd ウェーハ拡散処理方法及びウェーハ熱処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63161612A (ja) * 1986-12-25 1988-07-05 Toshiba Ceramics Co Ltd 縦型炉
JPS63177426A (ja) * 1987-01-17 1988-07-21 Oki Electric Ind Co Ltd 気相成長方法及び装置
JPH01251610A (ja) * 1987-11-27 1989-10-06 Tel Sagami Ltd 熱処理装置
JPH0448725A (ja) * 1990-06-15 1992-02-18 Kokusai Electric Co Ltd ウェーハ拡散処理方法及びウェーハ熱処理方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GENICHI HORIKOSHI, Vacuum Technology, March 18, 1983 (18.03.83), Takuo Kanno, Zaidan Hojin Tokyo Daigaku Shuppankai, p. 49-51. *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3501601B2 (ja) 1996-10-31 2004-03-02 東京エレクトロン株式会社 縦型熱処理装置およその熱処理炉のメンテナンス方法
JP2002353210A (ja) * 2001-05-25 2002-12-06 Tokyo Electron Ltd 熱処理装置および熱処理方法
KR100431657B1 (ko) * 2001-09-25 2004-05-17 삼성전자주식회사 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치

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