WO1998001902A1 - Gabarit de montage de composants a semi-conducteurs, table de mise en place de composants a semi-conducteurs et appareil a souder - Google Patents

Gabarit de montage de composants a semi-conducteurs, table de mise en place de composants a semi-conducteurs et appareil a souder Download PDF

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Publication number
WO1998001902A1
WO1998001902A1 PCT/JP1997/002335 JP9702335W WO9801902A1 WO 1998001902 A1 WO1998001902 A1 WO 1998001902A1 JP 9702335 W JP9702335 W JP 9702335W WO 9801902 A1 WO9801902 A1 WO 9801902A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor component
coating layer
semiconductor
pedestal
metal base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1997/002335
Other languages
English (en)
Japanese (ja)
Inventor
Yukihiro Takenami
Hisao Yabe
Yoshitoshi Sato
Tadakazu Chida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8178123A external-priority patent/JP2883582B2/ja
Priority claimed from JP18218396A external-priority patent/JP2877761B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to KR1019970709930A priority Critical patent/KR100324857B1/ko
Publication of WO1998001902A1 publication Critical patent/WO1998001902A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7622—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07178—Means for aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Definitions

  • the present invention relates to a jig for fixing a semiconductor component, a pedestal for mounting a semiconductor component, and a bonding device.
  • the present invention is capable of mass-producing a high-quality semiconductor product having good insulation and abrasion resistance, less generation and adhesion of dust.
  • the present invention relates to a jig for fixing semiconductor parts, a pedestal for mounting semiconductor parts, and a bonding apparatus.
  • a die bonder device as shown in FIG. 6 and a wire bonding device as shown in FIGS. 9 and 10 are used.
  • the die bonder device shown in Fig. 6 is a device that joins semiconductor elements (pellets and IC chips) on a lead frame.
  • a large number of semiconductor pellets formed by cutting a wafer adhered on a transparent film A wafer cassette ring 2 that holds 1, a monitor device such as a TV camera (not shown) that monitors the position and shape of each semiconductor pellet 1 to judge whether it complies with the standard, and a product that passes the standard on the wafer cassette 2
  • the semiconductor pellet 1 that sucks and picks up the semiconductor pellets 1 that are picked up one by one and conveys them to the brialignment 3 and the semiconductor pellet 1 that is positioned by the briar alignment 3 Press the die into a predetermined position on the lead frame 5.
  • a denting collet 6 is provided.
  • the suction cylinder 13 is arranged so as to face the die suction collet 4 with the wafer cassette ring 2 interposed therebetween.
  • the adsorption column 13 is formed in a cylindrical cap shape using a steel material such as carbon steel for machine structure (S45C), and furthermore, a semiconductor pellet is formed. It is manufactured by applying a black zinc plating having a thickness of about 2 to 15 m on the surface that comes into contact with the pellet adhesive film 8 to which 1 is attached.
  • the adsorption cylinder 13 is used by being fitted into a steel sleeve 16.
  • the reason why black zinc plating is applied to the contact surface of the adsorption cylinder 13 with the film 8 is as follows. That is, when the position and shape of each semiconductor pellet 1 stuck on the film 8 are monitored by the above-described monitor device, the background of the semiconductor pellet 1 which is relatively brightly photographed is darkened, thereby reducing the half. This is for enhancing the contrast between the conductor pellet 1 and the suction tube 13 serving as the background, and making it easy to determine the position and shape of the semiconductor pellet 1.
  • a push-up pin 7 is provided so as to be able to move up and down in the axial direction so as to face the die-sucking collet 4 with the film 8 interposed therebetween.
  • the push-up pin 7 is implanted on a mandrel 17 that can be moved up and down in the direction of the center axis of the suction tube 13, from the rear side of the film 8 on which a plurality of semiconductor pellets 1 are adhered. It moves through the pin insertion hole 14 of the suction tube 13 and penetrates the film 8 to peel off the semiconductor pellet 1 stuck on the upper surface of the film 8, and the semiconductor pellet 1 is collected by the die suctioning collet. It has the function of moving in the direction of the tip of 4.
  • the above-mentioned die bonding collet 6 and die adsorption collet 4 To ensure abrasion resistance, it is generally formed of a cemented carbide containing tungsten (W), cobalt (Co), etc., in a cylindrical shape, and the semiconductor pellet 1 is sucked and held at its tip. It has a truncated pyramid-shaped recess 9. Further, a suction hole 10 for communicating with the concave portion 9 and connecting the semiconductor pellet 1 to a vacuum source for vacuum suction is provided. In addition, the push-up pin 7 disposed opposite to the die suction collet 4 repeatedly contacts the pellet 1 at a high speed, so that the above-mentioned cemented carbide having excellent wear resistance is formed into a cylindrical needle shape. It is formed.
  • the suction cylinder 13, the push-up pin 7, the die suction collet 4, and the die bonding collet 6 are moved up and down or swiveled horizontally by a link that moves up and down by a cam device (not shown). It is configured to exercise.
  • each semiconductor pellet 1 When performing the die suction operation, the position and shape of each semiconductor pellet 1 are checked by the monitor device in a state where the suction tube 13 is in contact with the back surface of the film 8. Since the surface of the adsorption cylinder 13 is coated with black zinc, the contrast between the semiconductor pellet 1 and the adsorption cylinder 13 as the background is high, and the outline of the semiconductor pellet 1 is monitored by the monitor. It is clearly recognized. Then, a semiconductor bellet having a defect such as a chip or an abnormal shape is determined to be a rejected product, and is excluded from die bonding.
  • the suction cylinder 13 with the die suction collet 4 and the push-up pin 7 is built-in, and among the plurality of pellets 1, 1, ...
  • the tip (recess) of the die-sucking collet 4 is attached onto the semiconductor pellet 1. Then, the die-sucking collet 4 vacuum-adsorbs the semiconductor pellets 1 one by one into the concave portions 9 and sequentially transports them to the brialignment 3 shown in FIG.
  • the bri-alignment 3 positions the transferred semiconductor pellet 1.
  • the positioned semiconductor pellet 1 is conveyed in a state of being vacuum-sucked to the tip of a die bonding collet 6, and is placed at a predetermined position on a lead frame 5.
  • Collet 6 applies a scrub motion to semiconductor pellet 1, so that semiconductor pellet 1 receives a strong pressing force. Since solder for soldering is applied on the surface of the lead frame 5 in advance, the semiconductor belt 1 is integrally joined on the lead frame 5.
  • each electrode portion of the semiconductor pellet 1 is electrically connected to the lead 5a of the lead frame 5 by a wire using a wire-bonding device 20 as shown in FIGS. 9 and 10.
  • FIG. 9 shows the entire configuration of the bonding apparatus
  • FIG. 10 shows the configuration of a bonding head part which is a main part of the bonding apparatus.
  • a wire bonding apparatus as shown in FIG. 9 is an apparatus for connecting an electrode of a semiconductor component mounted on a semiconductor component mounting pedestal (bonding stage) and a lead by a bonding wire.
  • the bonding head 101 which has a bonding collet through which a bonding wire has been inserted, is equipped with an ITV camera, which consists of a camera head, a lens, and a lighting for detecting the position and bonding state of semiconductor components. Have been.
  • the bonding head 101 is mounted on an XY table drive mechanism (not shown) that can move in the X and Y directions.
  • the ITV camera in the head 101 captures the lead frame 5, which is the bonded part, which is conveyed and positioned on the semiconductor component mounting pedestal 102.
  • a pair of guide rails 104a, 104b is provided on both sides of the semiconductor component mounting table 102, and the lead frame 5 is provided with guide rails 104a, 104b.
  • the sheet is positioned in the width direction, and is guided to a predetermined position while being regulated so as not to meander during transportation.
  • a loader 105 is provided on the sending side of the lead frame 5, while an unloader 106 is provided on the storage side.
  • These loaders 105 position magazines 107 capable of accommodating a plurality of read frames 5 at predetermined positions, and automatically send out the magazines onto the transport path of the semiconductor component mounting receiving pedestal 102. While having a sending mechanism, the unloader 106 similarly has a storage mechanism for storing the magazine 107 from the transport path.
  • the lead frame 5, which is the component to be bonded, is set at a temperature of 200 to 300 on the lower surface of the semiconductor component mounting table 102.
  • a heating means 108 such as an overnight plate for heating to about C is provided. Since the heater plate 108 is arranged along the longitudinal direction of the pair of guide rails 104a, 104b, a plurality of semiconductor elements (IC chip) bonded to the lead frame 5 are provided. 1) Can be heated at the same time. By this heating operation, the electrodes of the semiconductor element 1 positioned on the semiconductor component mounting table 102 and the leads 5a of the lead frame 5 are electrically connected by the thermocompression bonding of the bonding wires 21. Connected.
  • the bonding stage where this bonding connection is performed that is, the pedestal for mounting semiconductor components, is conventionally provided with a black hard chrome plating layer or a Nigger plating layer on the surface of a metal base material made of SUS stainless steel. What is formed as a coating layer is mainly used.
  • Semiconductor component mounting By making the surface of the mounting pedestal black, the contrast between the pedestal and semiconductor components, such as semiconductor elements and lead frames, is increased to improve position detection accuracy.
  • the image signals of the semiconductor parts and the pedestal obtained by the ITV camera attached to the bonding head are processed in the binarization circuit of the image processing means.
  • the lead portion is lightened
  • the other parts are darkened and converted into digital signals, and the signals are used to detect the coordinates of leads and other components.
  • the bonding head 101 is provided with a bonding cable 22 for inserting and holding a bonding wire 121 made of a conductive material such as gold (Au) or aluminum (A1).
  • the cavities 22 are configured to be movable in the XYZ directions by a bonding head (not shown).
  • a discharge electrode 23 and a discharge portion 23a are attached to the bonding head so that the discharge portion 23a can be freely positioned directly below the cabinet 22.
  • a metal lead frame press 24 for pressing and fixing the lead frame 5 is provided, and the lead frame press 24 is configured to be moved up and down by a driving means 25.
  • the lead frame retainer 24 is a plate-shaped conductive member having an opening 26 at the center capable of surrounding the semiconductor pellet 1 and the lead 5 a of the lead frame 5.
  • the lead frame 5 is sandwiched between the bonding stages 27 and fixed at a predetermined position.
  • the wire bonding apparatus 20 operates as follows. That is, when the lead frame 5 is carried into the bonding stage 27, it is lowered by the lead frame retainer 24 and the driving means 25, and the lead frame 5 is lowered. 5 is clamped and fixed between the lead frame retainer 24 and the bonding stage 27. Next, the discharge electrode 23 moves, and the discharge part 23 a is positioned so as to be directly below the cavity 22, and the bonding wire 21 led out of the capillary 22 by the discharge between the two. Ball (nail head) is formed at the free end of Thereafter, the movement of the cavity 22 is controlled by a bonding head (not shown), and the electrode on the semiconductor pellet 1 and the lead 5a are electrically connected by the bonding wire 21. When the bonding operation for one semiconductor pellet 1 on the transfer line is completed, the lead frame presser 24 is raised, and the lead frame 5 is transferred by a predetermined amount to bond the next semiconductor pellet. The operation is repeated similarly.
  • a die bonder device that is made of conventional carbon steel for machine structural use (S45C) and is equipped with a fixture for fixing semiconductor components such as an adsorption cylinder with black zinc plating on the surface.
  • S45C machine structural use
  • semiconductor components such as an adsorption cylinder with black zinc plating on the surface.
  • the abrasion column has low wear resistance, the production yield of semiconductor components such as semiconductor pellet joints is reduced, and the maintenance of production equipment becomes complicated.
  • a coordinate position of a lead to be processed for example, a coordinate position different from a regular coordinate position is detected.
  • the lead frame is plated on the lower surface of the lead frame when the lead frame is transported onto the pedestal.
  • brazing filler metal such as silver (Ag) forming an intermetallic connection with the iron-based metal component of the cradle
  • the cradle and the lead frame may adhere to each other, and the lead frame may be bent or deformed. If the wire bonding operation is performed in this state, the bonding wire is deformed, and in any case, there is a problem that the bonding failure is increased.
  • the actual fair 6 1 0 6 8 as described in 4 JP-surface A 1 9 0 3 one T io 2 based ceramics stainless steel base metal Discloses a bonding apparatus using a pedestal on which an insulating film made of an insulating film is formed. However, they did not solve the above problems.
  • the present invention has been made in order to solve the above-mentioned problems, and has a good bonding strength and abrasion resistance of a coating layer, can reduce generation and adhesion of dust, It is an object of the present invention to provide a jig for fixing a semiconductor component capable of mass-producing high-quality semiconductor components at a high production yield.
  • the present invention provides a semiconductor component having good abrasion resistance, capable of reducing generation and adhesion of dust due to peeling of a coating, and capable of accurately recognizing a coordinate position such as a lead at the time of bonding or the like. Another object is to provide a mounting pedestal and a bonding device using the pedestal.
  • the semiconductor component fixing jig and the semiconductor component mounting pedestal according to the present invention are characterized in that a coating layer mainly composed of chromium oxide is formed on the surface of a metal base material.
  • chromium oxide power ⁇ I ⁇ dichromate C r 2 0 3
  • chromium oxide, wherein the average particle diameter of 0. 1 to 0. 5 m of chromic oxide (C r 2 0 3) is particulate.
  • the coating layer containing this oxide as a main component has a deep color and a dark green color.
  • the coating layer is preferably formed on the surface of a metal base material having a surface roughness of 5 or more on the basis of the maximum height (Rmax).
  • Rmax the maximum height
  • the surface of the metal base material is roughened by blasting or the like so that it becomes 5 or more on the basis of Rmax, and thereafter, the coating layer is formed.
  • the surface of the metal base material is made as rough as 5 m or more based on Rmax in this way, the bonding strength with the coating layer is increased, and the surface roughness of the semiconductor component fixing jig and the pedestal after the coating layer is formed is also reduced. Can be coarse.
  • the surface roughness on the basis of Rmax exceeds 10 m, it becomes difficult to form a uniform coating layer, so that the force is preferably 10 m or less.
  • the metal base material is an iron-based metal
  • the metal base material and chromium it is preferable to form a reaction layer of an iron compound and chromium oxide between the coating layer containing oxide as a main component.
  • the bonding strength with the coating layer containing chromium oxide as a main component can be further increased.
  • the coating layer mainly composed of chromium oxide is formed on the surface of the metal base material
  • the metal base material surface has a coating layer consisting essentially of a reaction layer and a coating layer mainly composed of chromium oxide, whether or not the interface is clear. Become.
  • the semiconductor component fixing jig is suitable for a lead frame retainer for pressing and fixing a lead frame to which a semiconductor element is joined, and a suction cylinder for fixing a semiconductor element by suction.
  • the above-mentioned pedestal for mounting semiconductor components is suitable as a pedestal for slidably mounting semiconductor components. Needless to say, the above-mentioned pedestal for mounting a semiconductor component may be used not only for a bonding device but also for mounting a semiconductor component when moving.
  • the bonding apparatus according to the present invention is a bonding apparatus for connecting an electrode and a lead of a semiconductor component mounted on a semiconductor component mounting pedestal, wherein the semiconductor component mounting pedestal is a metal motherboard. It is characterized in that a coating layer mainly composed of chromium oxide is formed on the material surface.
  • the above-mentioned metal base material is not particularly limited, and general-purpose structural steel materials, corrosion-resistant heat-resistant steels such as stainless steels, various iron-based alloys, carbon steels, titanium alloys, aluminum alloys, and Inconel can be used.
  • the coating layer containing chromium oxide as a main component can be formed, for example, by the following procedure.
  • a chromic acid (Cr0.) Aqueous solution or slurry (slurry) is applied to the surface of a metal base material such as an iron-based metal that has been surface-treated in advance, or is immersed in the metal base material to immerse it. Apply acid solution or slurry.
  • a metal base material such as an iron-based metal that has been surface-treated in advance
  • Apply acid solution or slurry Apply acid solution or slurry.
  • the reaction layer formed by the chemical reaction between chromium oxide and the surface layer of the metal base material has an average particle size of .
  • 0.1 to 0 5 // chromium oxide consisting of particles of m (chromic oxide: C r 2 0 3) coating layer mainly composed of are formed.
  • the total thickness of these coating layers is preferably 1 to 5 ⁇ m in total of the reaction layer and the coating layer containing chromium oxide as a main component, and 0 if the thickness of the coating layer is less than 1 ⁇ m, The insulation and abrasion resistance of the fixing jig decrease. If the reaction layer and the coating layer mainly composed of chromium oxide do not contain or contain ceramic fine particles or flakes as described below, conversely, if the coating layer exceeds 5 // m, The uniformity of the coating layer thickness is reduced, and the adhesion and bonding strength are also reduced. For similar reasons, a further 1-3 ⁇ m range is preferred.
  • the coating layer (reaction layer and coating layer mainly composed of chromium oxide) formed on the surface of the metal base material should contain 30 to -5 O wt% of the ceramic fine particles and flakes. It is desirable to adjust the amount of addition so that However, ceramic box particles such Thus A 1 2 0 3, in the case of adding the flake thickness of the coating employment in a range of 1. 5 to 8 0 jum is preferred.
  • the coating layer containing the ceramic fine particles and the like may be formed by the following manufacturing method in addition to the above. That is, an aqueous solution or slurry containing fine ceramic particles is applied to the surface of the base metal and heated to a temperature of 500 to 600 ° C. to form a porous ceramic layer. (C R_ ⁇ 3) an aqueous solution or slurry may be allowed immersed containing the ceramic layer formed by heat sintering at a temperature 5 0 0 ⁇ 6 0 crc a.
  • the thickness of the coating layer can be adjusted by controlling the number of repetitions of the application / impregnation operation and the baking operation.
  • the coating layer formed as described above has a high L and bonding strength with respect to the metal base material, and is excellent in high hardness, non-porosity, wear resistance, low friction, heat resistance, and the like.
  • the surface hardness when stainless steel is used as the metal base material is slightly affected by the hardness of the metal base material, and is between 500 and 60 OHV (0.1), while the thick coating containing aggregate
  • the surface hardness of the layer is as high as 150 to 200 OHV (0.1), and the same hardness as that of cemented carbide can be obtained.
  • the chromium oxide constituting the coating layer average particle diameter of (C r 0 0 3) particles is from 0.1 to 0.5 degrees and ultrafine, strong action as a solid lubricant. Therefore, even if the surface roughness (Rmax) is somewhat large, the coefficient of friction is small and the effect of improving the sliding characteristics is remarkable.
  • the coating layer is formed by precipitation from an aqueous solution, the constituent particles are super fine, Unlike porous ceramic coatings formed by the injection method, corrosion resistance and wear resistance are not insufficient.
  • the surface of the coating layer is densely formed, it has excellent heat resistance and thermal shock resistance, and may cause peeling of the coating layer even when repeated heat cycles act on the semiconductor component fixing jig and the pedestal. Low dusting due to peeling.
  • the coating layer has excellent corrosion resistance to acidic solutions such as sulfuric acid, basic solutions such as aqueous ammonia, and organic solvents such as alcohol, acetone, and gasoline. Has excellent durability.
  • the coating layer By forming the coating layer in this manner, the function of the metal base material can be greatly enhanced.
  • the components of the suction cylinder of the die bonder device, the lead frame holder of the wire bonding device, and the pedestal ⁇ fixing jig when used as a constituent material of a sliding portion such as a heater plate, an excellent effect is exhibited.
  • the coating layer has a dark green color, the base where the semiconductor component fixing jig is used as the suction tube of the die bonder device is used, or the semiconductor component mounting pedestal is used as the bonding device component pedestal.
  • the contrast between the semiconductor element and the lead and the suction tube and the pedestal serving as the background of the semiconductor element and the lead increases, and the shape and lead of the semiconductor element and the lead are monitored by a monitor device such as a TV camera. Is clearly recognized. Therefore, the recognition error of the semiconductor element and the recognition error of the coordinate position of the lead and the like by the monitor device are reduced, and the semiconductor component can be assembled with high accuracy.
  • the coating layer is formed on the semiconductor component fixing jig according to the present invention without performing a process for adjusting the surface roughness on the metal base material itself of the pedestal, the coating layer is formed from ultra-fine chromium oxide particles and dense.
  • the surface roughness of the fixing jig and the pedestal is the same as the surface roughness of the metal base material. Surface.
  • the semiconductor component fixing jig and the pedestal of the present invention are subjected to roughening treatment such as blast treatment on the metal base material itself in advance to increase the surface roughness (Rma X) of the metal base material itself to 5.O ⁇ m or more. Then, it is desirable to form a coating layer.
  • the semiconductor component fixing jig of the present invention having the coating layer formed thereon has a surface roughness (Rmax) of 3 to 5 m, and a uniform coating.
  • Rmax surface roughness
  • dust and dirt generated in the semiconductor manufacturing equipment during use can be fixed on the fixture and pedestal side without adhering to the semiconductor component side of the product. Adhesive force is possible.
  • the semiconductor component fixing jig and the pedestal according to the above configuration, since the coating layer made of ultrafine chromium oxide particles is formed on the surface of the metal base material, the insulating property and the insulation resistance of the fixing jig and the pedestal are improved. It has good abrasion and can prevent the generation and adhesion of dust. Therefore, when this fixing jig and pedestal are used as suction cylinders of die bonders and as lead frame holders, pedestals, and sliding parts for wire-bonding equipment, high-quality semiconductor parts with few defects can be produced at a high production yield. Mass production: it becomes possible.
  • FIG. 1 is an embodiment of a die bonder device incorporating a suction cylinder as a semiconductor component fixing jig according to the present invention, and is an enlarged cross-sectional view showing only a die suction portion as a main part.
  • FIG. 2 is a perspective sectional view showing one embodiment of a lead frame press as a semiconductor component fixing jig according to the present invention.
  • FIG. 3 is a cross-sectional view showing one embodiment of a semiconductor component mounting pedestal according to the present invention.
  • FIG. 4 is an enlarged cross-sectional view of a portion IV in FIG.
  • FIG. 5 is a cross-sectional view showing another embodiment of the pedestal for mounting a semiconductor component according to the present invention.
  • FIG. 6 is a perspective view showing a configuration example of the die bonder device.
  • FIG. 7 is an enlarged perspective view showing the suction tube in FIG.
  • FIG. 8 is an enlarged sectional view showing a die suction portion of a conventional die bonder device.
  • FIG. 9 is a plan view schematically showing the configuration of the bonding device.
  • FIG. 10 is a perspective view showing a configuration example of a bonding head part of a wire bonding apparatus.
  • adsorption cylinders 13A as semiconductor component fixing jigs according to Examples 1 to 5 shown in Table 1 were prepared.
  • the suction tube 13A and the cylindrical sleeve 16A may be integrally formed in advance.
  • Comparative Example 1 a carbon steel for machine structural use (S45C), which is a conventional material, was subjected to mechanical polishing to form a cylindrical cap-shaped adsorption cylinder body having the same dimensions as in Example 1.
  • a large number of S45C adsorption cylinders were prepared by applying zinc plating with a thickness of 10 m to the surface of the element body on the film contact side.
  • lead frame retainers 24a as jigs for fixing semiconductor components according to Examples 6 to 10 as shown in FIG. 2 were respectively manufactured.
  • Example 6 Comparative Example 2 The lead frame holder as a semiconductor component fixing jig according to the above was manufactured. Then, the bonding strength (peel? ⁇ ) Of the coating layer of each lead frame retainer manufactured in Examples 6 to 10 and Comparative Example 2 was measured, and the lead frame retainer 24 of the wire bonding apparatus shown in FIG. 10 was measured. After mounting, the characteristics of each lead frame holder, such as wear resistance and the amount of generated dust, were measured and compared and evaluated. The results shown in Table 2 below were obtained.
  • Ri consists fine C r 0 3 particles, according to example Li one lead frame press according to each embodiment to form a coating layer of dense high hardness, conventional material Compared with the presser of Comparative Example 2 using, the bonding strength with the coating layer was higher and no peeling occurred. Also, since the amount of dust generated by rubbing with the lead frame is greatly reduced, it has become possible to significantly improve the production yield of semiconductor components.
  • a coating layer 112 having a thickness shown in Table 3 was formed on both surfaces of each receiving main body 111.
  • semiconductor component mounting pedestals 113 according to Examples 11 to 15 as shown in Table 3 were prepared.
  • the coating layer 11'2 of the semiconductor component mounting pedestal 113 has an average particle size of 0.1 to 0.5 // H and an ultrafine chromium oxide (C r n 0.) It was composed of a chromium oxide layer 114 composed of particles and a reaction layer 115 formed by a chemical reaction between the chromium oxide and the iron component of the metal base material.
  • Comparative Examples 3 to 5 As shown in Table 3, conventional carbon steel for structural use (S45C) and stainless steel (SUS 304) were visually ground. This was processed to form a plate-shaped pedestal main body having the same dimensions as in Example 11, and a copper plating layer having a thickness shown in Table 3 on the surface of the pedestal main body on the lead frame contact side. (Comparative Example 3), a nickel plating layer (Comparative Example 4), and a zinc plating layer (Comparative Example 5) were formed, and a number of semiconductor component mounting pedestals according to Comparative Examples 3 to 5 were prepared.
  • each pedestal was mounted as a pedestal 102 for mounting semiconductor components in the bonding equipment shown in Fig. 9, and the characteristics of each pedestal, such as insulation, abrasion resistance, and the amount of dust generated, were measured and compared. did.
  • Ri consists fine C r 0 3 particles, according to the semiconductor component mounting cradle according to each embodiment to form a coating layer of dense high hardness, conventional
  • the occurrence of defective parts due to poor wire bonding is less than that of the cradle of each comparative example using a material.
  • the bonding strength between the metal base material and the coating layer is greatly increased as compared with the conventional case, there is almost no peeling of the coating layer, and dust is generated due to the peeling of the coating layer and the generated dust is transferred to the lead frame. Almost no adhesion.
  • the dust slightly generated in the semiconductor component mounting pedestal according to each example was almost adhered to the pedestal side. In other words, the amount of dust generated and adhered by rubbing with the lead frame is greatly reduced, and it has become possible to significantly improve the production yield of semiconductor components.
  • the semiconductor component fixing jig and the pedestal according to the present invention since the coating layer made of ultra-fine oxide particles is formed on the surface of the metal base material, the bonding strength is high, Good insulation and abrasion resistance of handling parts, and can prevent the generation and adhesion of force and dust. Therefore, when these semiconductor component fixing jigs and pedestals are used as components of suction frames and wires for die bonders, lead frame holders for dies, pedestals, and sliding parts, high quality semiconductor components with few defects can be obtained. Mass production with high production yields becomes possible.

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  • Die Bonding (AREA)

Abstract

Un gabarit de montage de composants à semi-conducteurs et une table pour un tel composant à semi-conducteurs inclut une couche de revêtement, formée sur la surface d'une base de métal, et faite principalement d'oxyde de chrome. En outre, l'oxyde de chrome est un oxyde chromique (Cr2O3) d'un diamètre particulaire moyen compris de 0,1 à 0,5 νm. Un appareil à souder selon l'invention est constitué du gabarit de montage de composants à semi-conducteurs et de la table déjà décrits. Grâce à cet agencement, il est possible de réaliser un gabarit de montage de composants à semi-conducteurs, une table, et un appareil à souder présentant une excellente résistance à l'usure, capables de réduire l'apparition et le dépôt de poussière par suite du pelage d'un matériau de revêtement, et capables de reconnaître correctement les positions en xy des conducteurs, et similaires, lors du soudage.
PCT/JP1997/002335 1996-07-08 1997-07-04 Gabarit de montage de composants a semi-conducteurs, table de mise en place de composants a semi-conducteurs et appareil a souder Ceased WO1998001902A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019970709930A KR100324857B1 (ko) 1996-07-08 1997-07-04 반도체부품고정지그와반도체부품탑재용받침대및본딩장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8/178123 1996-07-08
JP8178123A JP2883582B2 (ja) 1996-07-08 1996-07-08 半導体部品載置用受台およびボンディング装置
JP8/182183 1996-07-11
JP18218396A JP2877761B2 (ja) 1996-07-11 1996-07-11 半導体部品固定治具

Publications (1)

Publication Number Publication Date
WO1998001902A1 true WO1998001902A1 (fr) 1998-01-15

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PCT/JP1997/002335 Ceased WO1998001902A1 (fr) 1996-07-08 1997-07-04 Gabarit de montage de composants a semi-conducteurs, table de mise en place de composants a semi-conducteurs et appareil a souder

Country Status (3)

Country Link
KR (1) KR100324857B1 (fr)
TW (1) TW354414B (fr)
WO (1) WO1998001902A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240079374A1 (en) * 2018-08-31 2024-03-07 Tadatomo Suga Bonding system and bonding method

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS57154848A (en) * 1981-03-20 1982-09-24 Hitachi Ltd Assembling device for semiconductor
JPS63270366A (ja) * 1987-04-27 1988-11-08 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン セラミツクスに金属を接着する方法及び金属化されたセラミック基板
JPH0348231U (fr) * 1989-09-19 1991-05-08
JPH0446544U (fr) * 1990-08-21 1992-04-21

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Publication number Priority date Publication date Assignee Title
US1929A (en) * 1841-01-09 John wilder

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS57154848A (en) * 1981-03-20 1982-09-24 Hitachi Ltd Assembling device for semiconductor
JPS63270366A (ja) * 1987-04-27 1988-11-08 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン セラミツクスに金属を接着する方法及び金属化されたセラミック基板
JPH0348231U (fr) * 1989-09-19 1991-05-08
JPH0446544U (fr) * 1990-08-21 1992-04-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240079374A1 (en) * 2018-08-31 2024-03-07 Tadatomo Suga Bonding system and bonding method
US12261147B2 (en) * 2018-08-31 2025-03-25 Tadatomo Suga Bonding system and bonding method

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KR100324857B1 (ko) 2002-07-06
KR19990028608A (ko) 1999-04-15
TW354414B (en) 1999-03-11

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