WO1998020184A1 - Dispositif de pulverisation cathodique - Google Patents

Dispositif de pulverisation cathodique Download PDF

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Publication number
WO1998020184A1
WO1998020184A1 PCT/AU1997/000740 AU9700740W WO9820184A1 WO 1998020184 A1 WO1998020184 A1 WO 1998020184A1 AU 9700740 W AU9700740 W AU 9700740W WO 9820184 A1 WO9820184 A1 WO 9820184A1
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WIPO (PCT)
Prior art keywords
plasma
filter
sputter
coating apparatus
sputter coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/AU1997/000740
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English (en)
Inventor
Clive Hilton Burton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss Vision Australia Holdings Ltd
Original Assignee
Sola International Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sola International Pty Ltd filed Critical Sola International Pty Ltd
Priority to AU46953/97A priority Critical patent/AU4695397A/en
Publication of WO1998020184A1 publication Critical patent/WO1998020184A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Definitions

  • This invention relates to sputter coating apparatus. It relates particularly but not exclusively to sputter coating apparatus which includes the ability to control the sputtering process in a flexible way.
  • Sputtering is a process whereby energetic ions strike a target, ejecting atoms from it, with the ejected atoms being deposited and forming a coating layer on a nearby surface.
  • a magnetron is used to generate an ion plasma to activate the sputtering process.
  • the surface which is to be coated may be cleaned by means of cleaning fluids and/or by applying an ion plasma to that surface.
  • Sputtering processes have been developed for coating objects made of metals, ceramics, glasses, semi-conductors, sheet or roll plastics. All of these substances can withstand fairly vigorous plasma pre-clean processes and relatively high deposition temperatures with the exception of the plastics which, even in sheet or roll form, present a problem.
  • the problems have been overcome in sheet or roll coating of plastics by judiciously limiting the plasma cleaning conditions and sputter deposition conditions and rates.
  • the fact that the plastic sheets are flat and, in the case of roll coated films, can be held flat under roller tension, reduces the problem of distortion due to heat transfer during the plasma cleaning and sputter coating process.
  • AR coatings are traditionally composed of thin layers ( ⁇ 100 nm) of metal and semi-metal oxides and nitrides (e.g. SiO 2 , TiO 2 , Nb 2 O 5 , ZrO 2 , etc., etc.) which will hereinafter be referred to as "ceramics". These ceramics have thermal expansion coefficients of the order of 10 ⁇ 5 per degree C, whereas plastics have coefficients approximately an order of magnitude or more greater ( ⁇ 10 "4 /deg C).
  • sputter coating apparatus including: a) a plasma generating means, for generating fluxes, including one or more of:
  • a filter located between the plasma and the support, for selectively modifying the relative proportions of the various fluxes incident on the material.
  • the selective modification achieved by the filter may include shielding the support against fluxes, or it may include increasing of fluxes (above their natural level) by means of electric potential self-bias, externally applied electric potential (DC or AC) or use of magnetic fields.
  • the filter fulfils a shielding role, the filter may be so arranged that it provides shielding without substantially altering the gas flows and pressures in its vicinity.
  • the plasma may be a cleaning plasma such as an Argon ion plasma, directed towards the material to clean the surface of the material prior to a sputter coating operation.
  • the filter in this aspect of the invention may serve to protect the material from too much of any particular radiation such as electrons, ions, ultra violet, visible, infra red and microwave radiation.
  • the filter may also increase the effect of plasma cleaning by accelerating ions towards the material by means of self- or externally-applied electric potential with or without magnetic field.
  • the filter may also or alternatively be used to protect the material from the effect of undesirable and extraneous ions which may be present in the plasma during start-up.
  • the plasma may be a sputter plasma, located close to a sputter target, and causing the sputter target to emit atoms in response to the impact of energetic ions.
  • the filter in this aspect of the invention may serve to protect the material from extraneous ions or atoms during start-up, or from too much of any particular flux during deposition. Further or alternatively, the filter may be used to control timing of sputter deposition and/or uniformity of sputter deposition across the area of the material.
  • the plasma may be a reactive gas plasma, containing one or more types of reactive atoms such as oxygen and nitrogen which react with atoms from the sputter target on the surface of the material to produce a relatively stable coating layer on the material.
  • the filter in this aspect of the invention may serve to protect the material from the reactive gas or any extraneous ions or atoms until the start-up phase has been completed. Further or alternatively, the filter may serve to protect the material from too much of any particular flux such as electrons, ions, ultra violet, visible, infra red and microwave radiation, while allowing the reactive gas to reach the material.
  • Figure 1 is a schematic cross-sectional view of one embodiment of sputter coating apparatus according to the present invention.
  • Figure 2 is a schematic perspective view of the apparatus of Figure 1.
  • FIG. 3 shows one embodiment of filter for use according to the present invention.
  • Figure 4 shows another embodiment of a filter, in the form of an optically opaque gas permeable device.
  • Figure 5 shows another embodiment of a filter, in the form of an optically opaque gas permeable device shutter.
  • Figure 6 shows a cross-sectional view of another embodiment of a filter.
  • Figure 7 shows another embodiment of a filter, in open orientation for sputter coating deposition.
  • Figure 8 shows a variation on the embodiment of Figure 7, with louvres having different depths.
  • Figure 9 shows another embodiment of a filter, in the form of a rotating vane.
  • Figure 10 shows another embodiment of a filter, in the form of an expanded metal grille.
  • Figure 11 shows another embodiment of a filter, in the form of a rotating vane.
  • Figure 12 shows a generalised form of another embodiment of a filter.
  • Figure 13 shows a schematic side cross-sectional view of a spinning drum-type coater according to an embodiment of the invention with electrically active AC filter.
  • Figure 14 shows another embodiment of a spinning-drum-type coater with electrically active DC filter and neutraliser.
  • Figure 15 shows a schematic representation of a spinning-drum-type coater according to another embodiment of the invention with a magnetically- active-type filter.
  • the sputter coating apparatus of this embodiment of the invention includes plasma generating means 3, for generating a plasma 5.
  • Support 7 (a rotating drum) holds material 8 (lenses) which is subjected to fluxes from plasma 5.
  • Filter 10 is located between plasma 5 and support 7, and selectively protects material 8.
  • the embodiment illustrated also includes sputter magnetron 2, which incorporates a plasma generating means and a silicon target which acts as a coating source, emitting atoms in response to the impact of energetic ions from the plasma generated by the magnetron.
  • a filter (not shown) may be located between magnetron 2 and support 7, for selectively protecting material 8 (lenses).
  • Plasma 5 which is sustained and generated by plasma generating means
  • argon ions may consist substantially of argon ions during pre-cleaning of the surfaces of lenses 8.
  • oxygen or other reactive gas may be introduced into the plasma, so that the plasma now facilitates oxidisation of the atoms on the lens surfaces.
  • a second magnetron 6 is included, with a niobium target.
  • Appropriate sequences of activation for the various parts of the apparatus result in layers of SiO 2 and Nb 2 O 5 being formed on the lens surfaces.
  • Filters may be located near one or both of magnetrons 2 and 6, in order to regulate sputtering and protect lenses 8 during the sputtering processes.
  • a simple embodiment of filter 10 is shown in Figure 3. It consists simply of a perforated metal sheet which can be placed between microwave generated plasma 5 in Figure 1 , and rotating drum 7.
  • gas flow is allowed through holes 11 , but a proportion of the radiation from the microwave plasma is stopped reaching lenses 8 by the unperforated sections 12 of the metal sheet.
  • the radiation from the microwave plasma occurs at the same frequency as the microwave generator (and probably some harmonics of the same) as well as at wavelengths corresponding to the infra red, visible and ultraviolet portions of the electro-magnetic spectrum.
  • G Gas Transparency for a single filter can be defined as the ratio of the area of the perforations (P) to the total area (A) of the shield, i.e.
  • T Radiation Transparency
  • Radiation Transparency (T) is defined as the ratio of the amount (l ⁇ ) of radiation intensity which would be transmitted by the filter to the amount (l 0 ) of radiation incident on the filter assuming it were uniformly illuminated by radiation having a plane wave front and travelling in the direction of a normal to a large face of the filter. For visible light, this radiation can be envisaged as a collimated beam of uniform spatial intensity, and the corresponding ratio will be For a simple perforated metal sheet, as shown in Figure 3,
  • T, R and T uv are the Radiation Transparencies for Infra Red (IR) and UV wavelengths respectively, and G is as defined previously.
  • T MW microwave
  • the corresponding value of T MW for microwave (MW) radiation will in general be quite different from the T Vis , T, R & G values.
  • the Microwave Transparency T MW will be very small if the perforations in the sheet are much smaller than the wavelength of microwave radiation under consideration.
  • the perforations may be modelled as a circular waveguide beyond cut-off and of length equal to the thickness of the perforated filter.
  • the Visible, IR and UV transparencies need not be equal or the same as G.
  • These short wave Radiation Transparencies can be varied by appropriate choice of materials and geometry of the filter. For instance it is possible to make a filter out of two perforated plates, as shown in Figure 4 wherein the perforations do not align optically. If the plates are of metal or some other optically opaque material, then the filter is an optically opaque gas permeable (OOGP) filter. However, by suitable choice of the plate materials in Figure 4 it is possible to have a gas permeable filter which can have a range of differing values of T MW , T !R , T Vjs , T uv .
  • OOGP optically opaque gas permeable
  • the plate materials in Figure 4 are made of quartz, they may have values of T W , T, R , T Vis and T uv , all of which could approach 90% or so (depending on the quartz grade and thickness of the plate materials).
  • T W a plate material
  • T, R a plate material in figure 4
  • T vis and T uv would be near zero
  • T MW a plate material in figure 4
  • These are just non- limiting examples of material choices and geometries to illustrate the concept of varying control over the Radiation Transparencies at various wavelengths. The reasons for requiring such control are many.
  • the electric potential of the filter and its electrical conductivity will alter the plasma conditions for a microwave plasma or sputter plasma in its vicinity and may be used to accelerate ions and electrons towards the material (lenses), or conversely, prevent the ions or electrons from escaping the plasma region.
  • An alternating electric potential on the filter may be utilised to alternately accelerate ions and electrons from the plasma towards the material (lenses) in such a manner that said ions impinge on the material even though the material is electrically non-conducting.
  • the filter may incorporate an electron source which allows positive ions accelerated by a negatively charged perforated metal plate to continue as part of a charge neutral flux towards the material for the purposes of ion bombardment. This charge neutral flux will be composed of energetic electrons and ions plus some energetic neutrals (produced by recombination).
  • the filter may incorporate magnets or magnetic material properties tailored to optimise the effect of the filter for its various purposes which include, but are not limited to, radiation shielding as well as electric potential effects on ions and electrons from the microwave and/or sputter plasmas in their vicinity.
  • magnets or the shaping of magnetic fields by, for instance, the use of materials within the filter having high magnetic permeability or coercivity provides various benefits including:
  • the filter can also be designed to allow variability of its geometric properties which especially allow (but are not limited to) the variable control of the Radiation Transparencies aforementioned and especially of Sputter Fluxes.
  • the filter can provide a number of functions including :-
  • the plasma cleaning process or the plasma sputter process is instantly stable at the operating conditions required.
  • the filter may include a slot of a particular width at the centre of the target's length but having a smaller or larger slot width at each end of the target. This is designed to assist uniformity of deposition along the length of a linear target.
  • the filter may incorporate "louvres" in planes normal to the target surface (see Figure 7).
  • the incident sputtered atom flux cannot usually be considered to be a collimated beam, so that T Sput will necessarily be a complex function of the angular distribution of sputter atom velocities as well as sputter target and filter geometries. It is however, possible by tilting the louvres appropriately, to adjust the filter so that T Sput is near zero whilst not substantially affecting the gas conditions in the vicinity of the sputter region.
  • sputtered atoms incident on the filter may be active "getters" for oxygen and/or nitrogen, so that the pumping action of this getter surface will have some effect on oxygen and/or nitrogen partial pressures in the vicinity.
  • Figures 3 to 15 show a number of embodiments of filters for use with the present invention.
  • Figure 5 shows a filter which was fabricated and trialed on a sputter unit in Sola International Holdings Research Corporation. At that time the system had three sputter stations using Balzers circular, rotating-magnet magnetrons.
  • the AR coating process consisted of placing a batch of four lenses in front of a particular sputter magnetron for each AR coat layer.
  • FIG 5 shows the next embodiment of a filter for the microwave plasma. This, as previously described, consisted as a simple metal plate with circular hole perforations such that the visible transparency T is was about 36% .
  • variable filter in their closed and open configurations, respectively.
  • Such a variable filter can be used as a shutter in front of either a microwave or sputter plasma, and also for control of sputter atom energy and angle distributions as a function of distance along the long (vertical) dimension of a linear sputter target.
  • Figure 8 shows a variation of the variable louvre type filter in which the depths (D) of the individual louvre blades vary as a function of distance from the centre of the sputter target in its longest dimension. This allows further control of sputter atom angle and energy distributions and the deposition rate, again as functions of distance, as above.
  • the spacing between the louvre pivots may be chosen so that when the louvres are at a suitable angle, T Vis and T Sput are essentially zero.
  • Figure 9 shows a rotating vane type of filter comprising a solid metal blade which is rotatable about its own long axis. Gas permeability is allowed by the fact that gas can transgress the side boundaries of the metal plate.
  • This metal blade can be replaced by a more gas permeable filter of the type shown in Figure 4, but again, rotatable about its long axis.
  • the filter may be constructed as illustrated in Figure 10 from a metal mesh expanded in zigzag strips in and out of the original plane of the metal, so that the finished mesh is ostensibly optically opaque but quite permeable to gases.
  • Such expanded mesh (which can be made of aluminium or steel) is of a type which can be used, for instance, as a loudspeaker or ventilation grille.
  • Such a filter need not of course be rotatable, although it may be used in a shutter mode (as described previously with reference to Figure 5) by simply moving it in or out of the sputter flux as appropriate.
  • Figure 11 shows another modification of the rotating vane (or fixed) filter.
  • the vane is made of a UV transmissive material such as fused silica or crystal quartz which does not transmit ions and moderates the transmission of IR.
  • Figure 12 An alternative to this is illustrated in Figure 12 which may be taken as a general indication of a generic type of filter which can be constructed of any material available or producible in strip form of sufficient dimensions.
  • This design obviates the need to drill multiple holes through materials which may be difficult to machine (e.g. crystal quartz) or may need post- treatment if machined (e.g. Mu-metal). Again, this need not be rotatable but may be fixed in position or laterally moveable as a shutter as previously described.
  • Figure 13 shows a filter wherein an alternating voltage from generator 21 is impressed on a perforated metal shield electrode 22 at such a frequency and voltage that ions and electrons from the microwave plasma 23 are alternately accelerated towards, and impinge on the lenses 24 (as described in Section (iii) above).
  • the waveform and frequency produced by generator 21 may be chosen to optimise the amount of ion-cleaning and ion etching as well as electron heating of the lenses during the plasma cleaning process.
  • the design of this waveform and frequency can be deduced by relatively simple models of the electron and ion accelerations under the influence of an electric field.
  • E volts/metre
  • Figure 14 illustrates a form of filter which utilises a DC electric field impressed on the perforated electrode.
  • a suspended wire of low work function material which provides electrons to create a charge neutral plasma flux travelling towards the lenses for the purposes of plasma cleaning and/or reactive sputtering.
  • the wire may be heated to provide more electrons.
  • Figure 15 illustrates another form of filter in which a magnetised perforated-plate 31 of high coercivity material forms magnetic fields to direct ions and electrons from the plasma 32 such that they can provide ion bombardment again for the purposes of plasma pre-cleaning of the lenses and/or reactive sputtering.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Dispositif de pulvérisation cathodique comportant des moyens (3) générateurs de plasma pour produire des flux et un plasma (5) comprenant un ou plusieurs rayonnements infrarouges, visibles, ultraviolets et/ou hyperfréquences, des atomes ioniques, électroniques, neutres et/ou des flux moléculaires qui sont des flux d'atomes, de molécules ou de particules pulvérisées provenant de n'importe quelle cible adjacente au plasma. Le dispositif comporte en outre un support (7) portant le matériau (8) soumis aux flux et un filtre (10) placé entre le plasma et le support, permettant de modifier de manière sélective les proportions relatives des différents flux incidents sur le matériau.
PCT/AU1997/000740 1996-11-04 1997-11-03 Dispositif de pulverisation cathodique Ceased WO1998020184A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU46953/97A AU4695397A (en) 1996-11-04 1997-11-03 Sputter coating apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPO3383A AUPO338396A0 (en) 1996-11-04 1996-11-04 Sputter coating apparatus
AUPO3383 1996-11-04

Publications (1)

Publication Number Publication Date
WO1998020184A1 true WO1998020184A1 (fr) 1998-05-14

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PCT/AU1997/000740 Ceased WO1998020184A1 (fr) 1996-11-04 1997-11-03 Dispositif de pulverisation cathodique

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AU (1) AUPO338396A0 (fr)
WO (1) WO1998020184A1 (fr)

Cited By (5)

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Publication number Priority date Publication date Assignee Title
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
WO2010076421A3 (fr) * 2008-12-19 2011-01-20 Carewave Shielding Technologies (Sas) Module de pulvérisation cathodique
US9905895B2 (en) 2012-09-25 2018-02-27 Front Edge Technology, Inc. Pulsed mode apparatus with mismatched battery
US10008739B2 (en) 2015-02-23 2018-06-26 Front Edge Technology, Inc. Solid-state lithium battery with electrolyte
CN114990503A (zh) * 2022-06-30 2022-09-02 业成科技（成都）有限公司 镀膜方法、镀膜设备和电子设备

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