WO1998024296A2 - Empilement piezo-electrique multicouche pour haute tension - Google Patents

Empilement piezo-electrique multicouche pour haute tension Download PDF

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Publication number
WO1998024296A2
WO1998024296A2 PCT/US1997/021302 US9721302W WO9824296A2 WO 1998024296 A2 WO1998024296 A2 WO 1998024296A2 US 9721302 W US9721302 W US 9721302W WO 9824296 A2 WO9824296 A2 WO 9824296A2
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WO
WIPO (PCT)
Prior art keywords
piezoelectric
stack
layers
conductor
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1997/021302
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English (en)
Other versions
WO1998024296A3 (fr
Inventor
Dennis W. O'brien
Troy W. Barbee, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California Berkeley
University of California San Diego UCSD
Original Assignee
University of California Berkeley
University of California San Diego UCSD
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Publication date
Application filed by University of California Berkeley, University of California San Diego UCSD filed Critical University of California Berkeley
Publication of WO1998024296A2 publication Critical patent/WO1998024296A2/fr
Publication of WO1998024296A3 publication Critical patent/WO1998024296A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/501—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Definitions

  • the present invention relates to the generation of high voltages, particularly to a piezoelectric stack for high voltage applications, and more particularly to a shock driven solid state nanostructure high voltage piezoelectric stack and process for fabricating same.
  • High voltage (100-300 Kv) acceleration is needed for many scientific and defense applications. Further, inexpensive, rugged and compact accelerators are in demand. The higher the voltage gradient across the accelerator the shorter the stack can be to achieve the same particle acceleration. High voltage compact accelerator are currently limited by their power source, the voltage holdoff of dielectric materials, and their design and construction.
  • the present invention provides an all solid state multilaminate high voltage piezoelectric stack as an alternative to large high voltage power supplies and even the newest dielectric materials.
  • Applications for the multilaminate piezoelectric stack include compact accelerator configurations, compact high power microwave sources, and other short duration, high voltage sources.
  • a voltage is generated proportional to the mechanical strain of the piezoelectric material.
  • the multilaminate stack utilizes alternating layers of piezoelectric and conductor materials fabricated to form, for example, a cylinder shaped stack of piezoelectric layers, and as the shock or strain propagates through the stack, each layer of piezoelectric material generates a voltage potential between its two adjacent conductive layers, and the voltage of each conductor layer is the sum of the voltages of preceding piezoelectric layers.
  • the piezoelectric stack can be fabricated using conventional deposition techniques.
  • a further object of the invention is to provide a piezoelectric stack for high voltage applications.
  • a further object of the invention is to provide a method for fabricating a piezoelectric stack.
  • Another object of the invention is to fabricate a solid state multilaminate piezoelectric stack utilizing alternate layers of piezoelectric and conductor materials surrounded by a support material.
  • Another object of the invention is to provide a multilaminate piezoelectric high voltage stack that responds to imposed stress and resulting strain on the stack.
  • Another object of the invention is to provide a shock driven piezoelectric high voltage stack.
  • Another object of the invention is to provide a multilaminate piezoelectric high voltage stack having alternating layers of piezoelectric and conductor materials fabricated to form a cylinder or shaped stack of piezoelectric layers, and for accelerator application provide the stack of piezoelectric layers with a coaxial cavity.
  • Another object of the invention is to provide a shock driven compact particle accelerator utilizing a stack of piezoelectric layers having a cavity therein, wherein charged particles at one end of the cavity are accelerated through the cavity to a target.
  • the invention is a shock or strain driven multilaminate piezoelectric high voltage stack for generating very high voltages or high voltage waves when the piezoelectric stack is subjected to mechanical shock or stress, which may be the result of a high explosive detonation or a more conventional mechanism.
  • each layer of piezoelectric material generates a voltage potential between its two adjacent conductor layers.
  • the voltage of each conductor layer is the sum of the voltages of preceding piezoelectric layers, as in batteries in series.
  • the piezoelectric stack includes alternating layers of piezoelectric and conductor materials fabricated to form a cylinder or similarly shaped stack of piezoelectric layers, and for accelerator application the stack includes a coaxial cavity.
  • charged particles produced from a source at one end of the cavity are accelerated through the cavity to a target.
  • the multilaminate high voltage piezoelectric stack is fabricated as a solid state device.
  • the stack can be fabricated with discrete layers of piezoelectric and conductor materials stacked and mechanically bound with packing, using conventional deposition techniques.
  • integrated solid state high voltage piezoelectric stacks can be fabricated by the successive masked deposition of the piezoelectric and conductor materials.
  • the single figure illustrates in cross-section an embodiment of a solid state multilaminate high voltage piezoelectric stack configured as a compact particle accelerator.
  • the invention is directed to a shock or strain driven multilaminate piezoelectric high voltage stack.
  • the piezoelectric stack is capable of generating 200-300 Kv and high acceleration voltages needed for many scientific and defense applications.
  • the invention provides a high voltage, inexpensive, rugged, and compact accelerator.
  • When the piezoelectric stack is subjected to mechanical shock very high voltages or high voltage waves are generated.
  • each layer of piezoelectric material generates a voltage potential due to the resulting strain between its two adjacent conductor layers.
  • the voltage of each conductor layer is the sum of the voltages of preceding piezoelectric layers, as in batteries in series. Extraordinary short duration voltage gradients can be achieved, particularly when subjected to detonation shock in applications that result in destruction of the stack.
  • the multilaminate piezoelectric stack includes alternating layers of piezoelectric and conductor materials fabricated to form a cylinder or similarly shaped stack of piezoelectric layers, the stack being mechanically bound with packaging or support materials.
  • the cylindrical stack of piezoelectric layers is provided with a coaxial cavity. Charged particles from a source located at one end of the cavity are accelerated through the cavity to a target located at the other end of the cavity.
  • the invention has the potential for a wide variety of applications, such as for compact accelerators and compact high voltage and microwave sources. Inexpensive, explosive driven compact sources have applications such as particle accelerator for physics effects and diagnostics, and high power microwave use. Also, there are applications for inexpensive shock or strain driven compact sources and particle accelerators which vary from small, portable high energy x-ray sources for industrial and medical applications.
  • the multilaminate high voltage piezoelectric stacks can be fabricated with discrete layers of piezoelectric and conductor materials stacked and mechanically bound with packing.
  • integrated solid state high voltage piezoelectric stacks can be fabricated by the successive deposition of piezoelectric and conductor materials. Deposition of the materials can occur by physical or chemical vapor deposition, including RF and DC sputtering and similar techniques. By matching fully dense crystal lattice structures of the piezoelectric and conductor materials one can fabricate stacks capable of functioning under extraordinary stress.
  • the deposition process of fabrication also provides the opportunity to engineer-in piezoelectric characteristics well suit for accelerator or other applications matching the open circuit voltage or short circuit current required in response to an anticipated shock.
  • piezoelectric and conductor materials such as zinc-oxide and gold
  • Fully dense single crystal materials have a significant advantage in withstanding high stress.
  • Other piezoelectric materials suitable for high power stack applications include zirconium titanate, lead zirconate titanate (PZt), or PbNb2 ⁇ 7, while other conductor materials include Al, Cu, Pt, Rd, and indium tin oxide (ITO), or In2Sn3 ⁇ 2-
  • the piezoelectric effect relies on the deformation of the material's crystal lattice and creation of domains as the temperature falls below the Curie temperature. Domains are aligned (polarized) by an imposed electric field and an electric double layer is created with the conductor materials bounding the piezoelectric material.
  • g 33 20 x 10 - 3 v-m/n.
  • a 5 K bar stress on a 1cm thick PZT device can generate a 100 Kv open loop potential to the limit of the materials dielectric strength and lattice integrity. The trick is to increase g33 and the dielectric strength, and defer failure of the piezoelectric effect.
  • a multilaminate superlattice with a high density of interlaced piezoelectric double layers and equipotential conductor planes will accomplish all three.
  • Multilaminate materials fabrication is a well established technology at the Lawrence Livermore National Laboratory, as exemplified by U.S. Patent No. 5,486,277 issued January 23, 1966. Facilities and equipment capable of proof -of -principal and small scale device fabrication and testing are currently available.
  • multilaminate manufacturing technologies are available for fabricating the solid state piezoelectric high voltage stacks, using precision deposition techniques capable of synthesizing extraordinary smooth submicron thick layers of piezoelectric and conductor materials.
  • the fabrication process for producing and testing a multilaminate piezoelectric high voltage stack utilizing these existing technologies will be set forth hereinafter.
  • the multilaminate high voltage piezoelectric stack is fabricated as a solid state device. Physical vapor deposition techniques are employed to deposit alternating layers of piezoelectric materials, such as zinc oxide, and conductor materials (e.g., aluminum). Typical layer thicknesses can vary from 0.1 micron to 10s of microns. Tens to thousands of alternating piezoelectric-conductor layers may be deposited to generate very high voltages in response to mechanical stress or a shock wave. Shadow masks of various shapes and sizes may be used in depositing layers and fabricating stacks with tapered inner and outer surfaces. These solid state stacks may themselves be stacked and fused to form cascaded high voltage accelerators and sources.
  • the all solid state multilaminate high voltage stack of the present invention is an alternative to high voltage power supplies and even the newest dielectric materials.
  • a voltage is generated proportional to the mechanical strain on the piezoelectric material.
  • extraordinary voltage gradients may be produced.
  • the multilaminate high voltage piezoelectric stack will generate very high voltages approaching the structural limit of the piezoelectric's lattice.
  • the voltage at each conductor layer is the sum of the voltages of preceding piezoelectric layers. Extraordinary short duration voltage gradients can be achieved, particularly when subjected to detonation shock.
  • the drawing illustrates in cross-section an embodiment of a solid state nanostructure high voltage piezoelectric stack configured as a compact particle accelerator.
  • the piezoelectric stack generally indicated at 10, includes a plurality of conductor material or metal equipotential plane layers 11 between which are piezoelectric material 12, formed in this embodiment as a tapered cylinder having an outer surface 13 and provided with a coaxial tapering opening or accelerator cavity 14.
  • a particle source 15 is located at the bottom of cavity 14 and a target 16 is located at the top of cavity 14.
  • a support material 17 surrounds the piezoelectric stack 10, is similar in density and mechanical properties to the piezoelectric material 12, and is in close contact with the stack 10 to avoid reflecting transverse shock (voltage reversal is to be avoided).
  • the stack 10 may be composed of 10 to 4,000 layers 11 and
  • the conductor material layers 11 may be composed of gold having a thickness of 0.05 ⁇ to O.l ⁇ ; the piezoelectric material layers 12 may be composed of zinc oxide having a thickness of 1.0 to 100 microns; the support material may be composed of Zr ⁇ 2-
  • the tapered stack 10 may have an overall height of lO ⁇ to 2mm, a lower diameter of 10 to 100mm, an upper diameter of 1 to 25mm, with the tapered outer surface 13 extending at a taper of 0.1° to 45°; and the tapering accelerator cavity 14 having a lower diameter of 0.1 to 0.5mm, and upper diameter of 0.1 to 1mm, tapering at 0.1° to 45° from bottom to top.
  • the particle source 15 may be, for example, composed of tungsten or loaded europeum, and the target 16 composed of tungsten.
  • the support material may, for example, have an overall height of 1 to 10mm, with a thickness of 10 to 100mm below and above the stack 10, and a thickness varying from 10 to 100mm along the tapered surface 13 of the stack 10.
  • the conducting electrode layer is deposited on a substrate, such as float glass, at a deposition rate greater than 30 A per second to a thickness of 0.1-0.2 ⁇ m (1000A) for example, using a deposition time of 30-70 seconds. It is desired to maintain the substrate temperature at 40°-50°C during processing.
  • the maskant is removed, and the electrode is again placed in the first source (or an equivalent third source). 6.
  • the maskant is applied to put on the next electrode, whereafter a layer of gold is applied.
  • the electrode is returned to the second source (or an equivalent fourth source).
  • the electrode is moved between sources and masked to provide the desired layers of gold and ZnO.
  • the substrate quality is important, high quality thin-uniform substrates with roughness of less than 1/20 of the thickness of the thinnest layer is preferred.
  • the shock or strain driven piezoelectric high voltage stack of the present invention has application for use in compact accelerators, compact high voltage and microwave sources, explosive driven compact sources for particle acceleration for studies relating to physics effects and diagnostics, as well as for portable high energy x-ray sources for industrial and medical applications.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Empilement piézo-électrique multicouche entraîné par choc ou par sollicitation, pour haute tension, et procédé de fabrication associé. Ladite nanostructure comporte des couches alternantes de matériau piézo-électrique et conducteur formant un empilement cylindrique, ou de forme analogue, de couches piézo-électriques. Pour une application d'accélérateur, lesdites couches piézo-électriques présentent une cavité coaxiale. Des tensions très élevées ou des ondes de tension élevée peuvent être produites lorsque l'empilement piézo-électrique est soumis à un choc mécanique qui peut être le résultat d'une détonation explosive ou d'un mécanisme plus classique. A mesure que le choc se propage à travers l'empilement piézo-électrique, chaque couche de matériau piézo-électrique produit un potentiel de tension entre ses deux couches conductrices adjacentes. La tension de chaque couche conductrice est la somme des tensions des couches piézo-électriques précédentes, comme dans les batteries en série. Pour des applications d'accélérateur, des particules chargées à une extrémité de la cavité dans l'empilement sont accélérées dans la cavité vers une cible. L'empilement piézo-électrique peut être fabriqué à l'aide de couches individuelles de matériau piézo-électrique et conducteur empilées et mécaniquement serrées à l'intérieur d'un boîtier ou d'un matériau de support. Alternativement, des empilement piézo-électriques intégrés à semi-conducteurs peuvent être fabriqués par le dépôt masqué successif de matériau piézo-électrique et conducteur. Le dépôt de matériau peut être effectué par dépôt physique ou par dépôt chimique en phase vapeur, dont la pulvérisation en radiofréquence et des techniques analogues.
PCT/US1997/021302 1996-11-20 1997-11-20 Empilement piezo-electrique multicouche pour haute tension Ceased WO1998024296A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3146596P 1996-11-20 1996-11-20
US60/031,465 1996-11-20

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WO1998024296A2 true WO1998024296A2 (fr) 1998-06-11
WO1998024296A3 WO1998024296A3 (fr) 1998-10-01

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000044054A1 (fr) 1999-01-22 2000-07-27 Kansai Research Institute Dispositif a film mince piezoelectrique, procede de production associe et tete d'enregistrement a jet d'encre
CN102522493A (zh) * 2011-12-07 2012-06-27 中国科学院微电子研究所 压电纳米线的叠层结构及其制造方法
EP2224507A4 (fr) * 2007-11-27 2013-04-24 Kyocera Corp Elément piézoélectrique stratifié et son procédé de fabrication, appareil d'injection et système d'injection de combustible
EP3852160A1 (fr) * 2020-01-19 2021-07-21 Beijing Xiaomi Mobile Software Co., Ltd. Ensemble piézoélectrique et son procédé de fabrication, composant d'écran et terminal mobile

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2479926A (en) * 1947-10-11 1949-08-23 Brush Dev Co Electrotransducer and method of making same
US3042550A (en) * 1958-05-23 1962-07-03 Corning Glass Works Solid delay line improvements
AT237930B (de) * 1962-09-12 1965-01-11 Hans Dipl Ing Dr Techn List Piezoelektrische Einrichtung, insbesondere zur Kraftmessung, und Verfahren zu ihrer Herstellung
CH429228A (de) * 1964-12-10 1967-01-31 Kistler Instrumente Ag Piezoelektrischer Einbaukörper zum Einbau in einen piezoelektrischen Wandler
US3824352A (en) * 1973-04-30 1974-07-16 Zenith Radio Corp Stacked piezoelectric transducer acting as quarter-wave resonator for recording video information
JPS601877A (ja) * 1983-06-20 1985-01-08 Nippon Soken Inc 積層型圧電体
US4632856A (en) * 1985-02-06 1986-12-30 Marcus Michael A Multilayer thin film electrical devices free of adhesive
US4752712A (en) * 1985-06-10 1988-06-21 Nippon Soken, Inc. Piezoelectric laminate stack
DE3751183T2 (de) * 1986-09-29 1995-11-16 Mitsubishi Chem Corp Piezoelektrischer Antrieb.
US4835436A (en) * 1988-03-21 1989-05-30 Lew Hyok S Piezoelectric impulse sensor
JP2738706B2 (ja) * 1988-07-15 1998-04-08 株式会社日立製作所 積層型圧電素子の製法
US5036240A (en) * 1988-07-18 1991-07-30 Lew Hyok S Impulse sensor with mechanical preamplification and noise cancellation
JPH0217860U (fr) * 1988-07-20 1990-02-06
US5163209A (en) * 1989-04-26 1992-11-17 Hitachi, Ltd. Method of manufacturing a stack-type piezoelectric element
JP3039971B2 (ja) * 1989-09-19 2000-05-08 株式会社日立製作所 接合型圧電装置及び製造方法並びに接合型圧電素子
US5191687A (en) * 1990-09-28 1993-03-09 Caterpillar Inc. Process for making piezoelectric stacks
JPH06132579A (ja) * 1992-09-01 1994-05-13 Canon Inc 変位素子及びそれを用いたプローブ、同プローブを有する機器
US5410208A (en) * 1993-04-12 1995-04-25 Acuson Corporation Ultrasound transducers with reduced sidelobes and method for manufacture thereof
JP2830724B2 (ja) * 1993-12-20 1998-12-02 日本電気株式会社 圧電アクチュエータの製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000044054A1 (fr) 1999-01-22 2000-07-27 Kansai Research Institute Dispositif a film mince piezoelectrique, procede de production associe et tete d'enregistrement a jet d'encre
EP1067609A4 (fr) * 1999-01-22 2007-06-13 Canon Kk Dispositif a film mince piezoelectrique, procede de production associe et tete d'enregistrement a jet d'encre
EP2224507A4 (fr) * 2007-11-27 2013-04-24 Kyocera Corp Elément piézoélectrique stratifié et son procédé de fabrication, appareil d'injection et système d'injection de combustible
US8502434B2 (en) 2007-11-27 2013-08-06 Kyocera Corporation Multi-layer piezoelectric element, method for manufacturing the same, injection apparatus and fuel injection system
CN102522493A (zh) * 2011-12-07 2012-06-27 中国科学院微电子研究所 压电纳米线的叠层结构及其制造方法
EP3852160A1 (fr) * 2020-01-19 2021-07-21 Beijing Xiaomi Mobile Software Co., Ltd. Ensemble piézoélectrique et son procédé de fabrication, composant d'écran et terminal mobile

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