WO1998024296A3 - Empilement piezo-electrique multicouche pour haute tension - Google Patents

Empilement piezo-electrique multicouche pour haute tension Download PDF

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Publication number
WO1998024296A3
WO1998024296A3 PCT/US1997/021302 US9721302W WO9824296A3 WO 1998024296 A3 WO1998024296 A3 WO 1998024296A3 US 9721302 W US9721302 W US 9721302W WO 9824296 A3 WO9824296 A3 WO 9824296A3
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric
stack
layers
cavity
shock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1997/021302
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English (en)
Other versions
WO1998024296A2 (fr
Inventor
Dennis W O'brien
Troy W Barbee Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California Berkeley
University of California, San Diego
Original Assignee
University of California Berkeley
University of California, San Diego
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California Berkeley, University of California, San Diego filed Critical University of California Berkeley
Publication of WO1998024296A2 publication Critical patent/WO1998024296A2/fr
Publication of WO1998024296A3 publication Critical patent/WO1998024296A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/501—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Empilement piézo-électrique multicouche entraîné par choc ou par sollicitation, pour haute tension, et procédé de fabrication associé. Ladite nanostructure comporte des couches alternantes de matériau piézo-électrique et conducteur formant un empilement cylindrique, ou de forme analogue, de couches piézo-électriques. Pour une application d'accélérateur, lesdites couches piézo-électriques présentent une cavité coaxiale. Des tensions très élevées ou des ondes de tension élevée peuvent être produites lorsque l'empilement piézo-électrique est soumis à un choc mécanique qui peut être le résultat d'une détonation explosive ou d'un mécanisme plus classique. A mesure que le choc se propage à travers l'empilement piézo-électrique, chaque couche de matériau piézo-électrique produit un potentiel de tension entre ses deux couches conductrices adjacentes. La tension de chaque couche conductrice est la somme des tensions des couches piézo-électriques précédentes, comme dans les batteries en série. Pour des applications d'accélérateur, des particules chargées à une extrémité de la cavité dans l'empilement sont accélérées dans la cavité vers une cible. L'empilement piézo-électrique peut être fabriqué à l'aide de couches individuelles de matériau piézo-électrique et conducteur empilées et mécaniquement serrées à l'intérieur d'un boîtier ou d'un matériau de support. Alternativement, des empilement piézo-électriques intégrés à semi-conducteurs peuvent être fabriqués par le dépôt masqué successif de matériau piézo-électrique et conducteur. Le dépôt de matériau peut être effectué par dépôt physique ou par dépôt chimique en phase vapeur, dont la pulvérisation en radiofréquence et des techniques analogues.
PCT/US1997/021302 1996-11-20 1997-11-20 Empilement piezo-electrique multicouche pour haute tension Ceased WO1998024296A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3146596P 1996-11-20 1996-11-20
US60/031,465 1996-11-20

Publications (2)

Publication Number Publication Date
WO1998024296A2 WO1998024296A2 (fr) 1998-06-11
WO1998024296A3 true WO1998024296A3 (fr) 1998-10-01

Family

ID=21859601

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/021302 Ceased WO1998024296A2 (fr) 1996-11-20 1997-11-20 Empilement piezo-electrique multicouche pour haute tension

Country Status (1)

Country Link
WO (1) WO1998024296A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1067609B1 (fr) * 1999-01-22 2010-09-29 Canon Kabushiki Kaisha Dispositif a film mince piezoelectrique, procede de production associe et tete d'enregistrement a jet d'encre
EP2224507B1 (fr) * 2007-11-27 2014-10-08 Kyocera Corporation Elément piézoélectrique multicouche, son procédé de fabrication
CN102522493B (zh) * 2011-12-07 2013-10-02 中国科学院微电子研究所 压电纳米线的叠层结构及其制造方法
CN113140668B (zh) * 2020-01-19 2024-05-28 北京小米移动软件有限公司 压电组件及制作方法、屏幕部件和移动终端

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2479926A (en) * 1947-10-11 1949-08-23 Brush Dev Co Electrotransducer and method of making same
US3111741A (en) * 1958-05-23 1963-11-26 Corning Glass Works Solid delay line improvements
US3281612A (en) * 1962-09-12 1966-10-25 List Hans Piezoelectric device, particularly a force measuring instrument and the process of manufacturing same
US3390287A (en) * 1964-12-10 1968-06-25 Kistler Instrumente Ag Piezo-electric building units
US3824352A (en) * 1973-04-30 1974-07-16 Zenith Radio Corp Stacked piezoelectric transducer acting as quarter-wave resonator for recording video information
US4570098A (en) * 1983-06-20 1986-02-11 Nippon Soken, Inc. Temperature compensated stack of piezoelectric elements
US4632856A (en) * 1985-02-06 1986-12-30 Marcus Michael A Multilayer thin film electrical devices free of adhesive
US4752712A (en) * 1985-06-10 1988-06-21 Nippon Soken, Inc. Piezoelectric laminate stack
US4812698A (en) * 1986-09-29 1989-03-14 Mitsubishi Chemical Industries Limited Piezoelectric bending actuator
US4835436A (en) * 1988-03-21 1989-05-30 Lew Hyok S Piezoelectric impulse sensor
US4978881A (en) * 1988-07-20 1990-12-18 Ngk Spark Plug Co., Ltd. Piezoelectric actuator of lamination type
US5036240A (en) * 1988-07-18 1991-07-30 Lew Hyok S Impulse sensor with mechanical preamplification and noise cancellation
US5163209A (en) * 1989-04-26 1992-11-17 Hitachi, Ltd. Method of manufacturing a stack-type piezoelectric element
US5191687A (en) * 1990-09-28 1993-03-09 Caterpillar Inc. Process for making piezoelectric stacks
US5196756A (en) * 1988-07-15 1993-03-23 Hitachi Ltd. Stack-type piezoelectric element, process for producing the same, and stack-type piezoelectric device
US5325012A (en) * 1989-09-19 1994-06-28 Hitachi, Ltd Bonded type piezoelectric apparatus, method for manufacturing the same and bonded type piezoelectric element
US5410208A (en) * 1993-04-12 1995-04-25 Acuson Corporation Ultrasound transducers with reduced sidelobes and method for manufacture thereof
US5568679A (en) * 1993-12-20 1996-10-29 Nec Corporation Method of manufacturing laminated piezoelectric actuator having cavity
US5631463A (en) * 1992-09-01 1997-05-20 Canon Kabushiki Kaisha Displacement element, probe employing the element, and apparatus employing the probe

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2479926A (en) * 1947-10-11 1949-08-23 Brush Dev Co Electrotransducer and method of making same
US3111741A (en) * 1958-05-23 1963-11-26 Corning Glass Works Solid delay line improvements
US3281612A (en) * 1962-09-12 1966-10-25 List Hans Piezoelectric device, particularly a force measuring instrument and the process of manufacturing same
US3390287A (en) * 1964-12-10 1968-06-25 Kistler Instrumente Ag Piezo-electric building units
US3824352A (en) * 1973-04-30 1974-07-16 Zenith Radio Corp Stacked piezoelectric transducer acting as quarter-wave resonator for recording video information
US4570098A (en) * 1983-06-20 1986-02-11 Nippon Soken, Inc. Temperature compensated stack of piezoelectric elements
US4632856A (en) * 1985-02-06 1986-12-30 Marcus Michael A Multilayer thin film electrical devices free of adhesive
US4752712A (en) * 1985-06-10 1988-06-21 Nippon Soken, Inc. Piezoelectric laminate stack
US4812698A (en) * 1986-09-29 1989-03-14 Mitsubishi Chemical Industries Limited Piezoelectric bending actuator
US4835436A (en) * 1988-03-21 1989-05-30 Lew Hyok S Piezoelectric impulse sensor
US5196756A (en) * 1988-07-15 1993-03-23 Hitachi Ltd. Stack-type piezoelectric element, process for producing the same, and stack-type piezoelectric device
US5036240A (en) * 1988-07-18 1991-07-30 Lew Hyok S Impulse sensor with mechanical preamplification and noise cancellation
US4978881A (en) * 1988-07-20 1990-12-18 Ngk Spark Plug Co., Ltd. Piezoelectric actuator of lamination type
US5163209A (en) * 1989-04-26 1992-11-17 Hitachi, Ltd. Method of manufacturing a stack-type piezoelectric element
US5325012A (en) * 1989-09-19 1994-06-28 Hitachi, Ltd Bonded type piezoelectric apparatus, method for manufacturing the same and bonded type piezoelectric element
US5191687A (en) * 1990-09-28 1993-03-09 Caterpillar Inc. Process for making piezoelectric stacks
US5631463A (en) * 1992-09-01 1997-05-20 Canon Kabushiki Kaisha Displacement element, probe employing the element, and apparatus employing the probe
US5410208A (en) * 1993-04-12 1995-04-25 Acuson Corporation Ultrasound transducers with reduced sidelobes and method for manufacture thereof
US5568679A (en) * 1993-12-20 1996-10-29 Nec Corporation Method of manufacturing laminated piezoelectric actuator having cavity

Also Published As

Publication number Publication date
WO1998024296A2 (fr) 1998-06-11

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