WO2002019483A2 - Amelioration d'une bande de frequence utile de modulation laser - Google Patents

Amelioration d'une bande de frequence utile de modulation laser Download PDF

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Publication number
WO2002019483A2
WO2002019483A2 PCT/RU2001/000291 RU0100291W WO0219483A2 WO 2002019483 A2 WO2002019483 A2 WO 2002019483A2 RU 0100291 W RU0100291 W RU 0100291W WO 0219483 A2 WO0219483 A2 WO 0219483A2
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WO
WIPO (PCT)
Prior art keywords
οgρanicheniya
τiπa
naibοlshegο
οπτichesκοgο
τοlschiny
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/RU2001/000291
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English (en)
Russian (ru)
Other versions
WO2002019483A3 (fr
Inventor
Aleksander Aleksandrovich Chelnyy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatelsky Institut 'polyus'
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Original Assignee
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatelsky Institut 'polyus'
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatelsky Institut 'polyus', Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod filed Critical Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno-Issledovatelsky Institut 'polyus'
Priority to AU2001276806A priority Critical patent/AU2001276806A1/en
Publication of WO2002019483A2 publication Critical patent/WO2002019483A2/fr
Publication of WO2002019483A3 publication Critical patent/WO2002019483A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties

Definitions

  • Injectable single-mode and single-mode lasers can be performed on different heterostructures.
  • ⁇ ⁇ sn ⁇ vu iz ⁇ b ⁇ e ⁇ eniya ⁇ s ⁇ avlena task s ⁇ zdaniya s ⁇ s ⁇ ba ⁇ eguli ⁇ va.niya dia ⁇ az ⁇ na ⁇ ab ⁇ chi ⁇ chas ⁇ laze ⁇ n ⁇ y m ⁇ dulyatsii, ⁇ y ⁇ bes ⁇ echivae ⁇ ⁇ i vys ⁇ chas ⁇ n ⁇ y m ⁇ dulyatsii restriction s ⁇ e ⁇ a gene ⁇ atsii shi ⁇ l ⁇ sn ⁇ inzhe ⁇ tsi ⁇ nny ⁇ laze ⁇ v and s ⁇ abilizatsiyu length v ⁇ lny ⁇ dn ⁇ chas ⁇ ny ⁇ inzhe ⁇ tsi ⁇ nny ⁇ laze ⁇ v, ⁇ ab ⁇ ayuschi ⁇ ⁇ i ⁇ vyshenny ⁇ vy ⁇ dny ⁇ m ⁇ schn ⁇ s ⁇ ya ⁇ radiation.
  • the value ⁇ / ⁇ is selected in the range from 3 to 20.
  • the experimental value has been better, since with the bandwidth ⁇ / ⁇ the bandwidth of the modulation band increases .-.
  • np > the same part of the thickness of the region of the voluminous charge ⁇ - ⁇ - ⁇ is a heterogeneous receptacle, which is part of the restricted unlicensed unit, i.e. an unlawful last-minute charge should be taken out of the charge ⁇ - ⁇ - ⁇ getheter.
  • the thickness of ⁇ ! Be equal to the thickness of ⁇ 03 and the volume of charge is ⁇ - ⁇ - ⁇ , after deduction of the amount, the result is incurred! ⁇ blas ⁇ i ⁇ bomn ⁇ g ⁇ za ⁇ yada in ⁇ g ⁇ anichi ⁇ eln ⁇ m legi ⁇ vann ⁇ m ⁇ dsl ⁇ e ⁇ g ⁇ n- ⁇ i ⁇ a ele ⁇ v ⁇ dim ⁇ s ⁇ i, ⁇ lschiny with, P ⁇ blas ⁇ i ⁇ bomn ⁇ g ⁇ za ⁇ yada in ⁇ g ⁇ anichi ⁇ eln ⁇ m legi ⁇ vann ⁇ m ⁇ dsl ⁇ e ⁇ g ⁇ p- ⁇ i ⁇ a ele ⁇ v ⁇ dim ⁇ s ⁇ i, ⁇ lschiny s ⁇ ds a ⁇ ivn ⁇ g ⁇ sl ⁇ ya and ⁇ lschiny ⁇ ! for additional boundary cases between the active layer and the boundary partitions of ⁇ .
  • they may be calculated according to well-known cases (see, for example, [P. G. Uliseyev “Introduction to physics”). 6 Injection Lasers ”, ⁇ . "Kauka”, 1983, pp. 156-162; X. ⁇ Casey, ⁇ . Panish “Lasers for getters”, »iru, Russia, 1981, pp. 288-281]) and, consequently, the values of the thickness of the user are undecided Consequently, for each portable heterostructure, it is possible to calculate the required thickness of the illegal unregistered user service.
  • the posed problem is solved in the event that a large illegal illegal game could be entered only in the case of a negative legal solution.
  • the proposed Lazer can be sold for various hetero- generators, including dual heterostructures with DGS, for quantized discharges.
  • the posed problem is solved also, in the extreme case, in the first limited layer, the simple active one is placed in the complete second.
  • the posed problem is also solved by the fact that the active layer is formed at the extreme end of the one-to-one solution.
  • the active layer can be made in the form of a single quantum-active substitute.
  • the proposed Lazer can be implemented in various modifications of the casing with a wide radiating, flat, narrow and less than 3 ⁇ m, for receiving a
  • the task posed is solved by the fact that the gain area is selected by the user.
  • barter areas are introduced in the facility; u ⁇ azannymi ba ⁇ e ⁇ nymi ⁇ blas ⁇ yami ⁇ b ⁇ az ⁇ vana ⁇ ⁇ ayney me ⁇ e ⁇ dna meza ⁇ l ⁇ s ⁇ a, ⁇ ichem ⁇ dn ⁇ m in case ba ⁇ e ⁇ nye ⁇ blas ⁇ i vy ⁇ lneny a depth ⁇ evyshayuschuyu depth ⁇ as ⁇ l ⁇ zheniya a ⁇ ivn ⁇ g ⁇ sl ⁇ ya in case d ⁇ ug ⁇ m ba ⁇ e ⁇ nye ⁇ blas ⁇ i vy ⁇ lneny ⁇ a ⁇ , ch ⁇ ⁇ sn ⁇ vanie meza ⁇ l ⁇ s ⁇ i ⁇ azmeschen ⁇ over a ⁇ ivnym sl ⁇ em on ⁇ ass ⁇ yanii ⁇
  • the system is not subject to any risk of poor performance.
  • the first active, last ⁇ thickness is ⁇ 5 , selected in the range of 5 nm ... 12 nm, -
  • the second active active ⁇ , thickness ⁇ is identical to the primary active disproportionate and equal to ⁇ 7 equal to ⁇ 5 ;
  • Illegal Restricted Service Group (the composition of the ntype of the restricted ⁇ gr ⁇ layer) is ⁇ 9 , selected in the range of 0.1 irri ⁇ m ... 1 ⁇ m,
  • ⁇ me ⁇ g ⁇ , ⁇ i increase ⁇ lschiny nelegi ⁇ vann ⁇ g ⁇ ⁇ g ⁇ anichi ⁇ eln ⁇ g ⁇ ⁇ dsl ⁇ ya ⁇ g ⁇ m ⁇ zhe ⁇ by ⁇ s ⁇ ve ⁇ s ⁇ venn ⁇ reduced ⁇ lschina legi ⁇ vann ⁇ g ⁇ ⁇ dsl ⁇ ya ⁇ g ⁇ ⁇ imesyu p- ⁇ i ⁇ a ⁇ a ⁇ , ch ⁇ by s ⁇ ani ⁇ ne ⁇ b ⁇ dimuyu summa ⁇ nuyu ⁇ asche ⁇ nuyu ⁇ lschinu ⁇ g ⁇ anichi ⁇ elny ⁇ ⁇ dsl ⁇ ev ⁇ g ⁇ , ⁇ lsche ⁇ ' ⁇ y vy ⁇ lnya ⁇ ⁇ g ⁇ anichi ⁇ elnye ⁇ dsl ⁇ i ⁇ g ⁇ not tseles ⁇ b ⁇ az
  • An essential present invention is the original selection of significant essential features that are not obvious.
  • the commercialization of the invention is based on the well-known basic technological processes, which are rapidly and expansive.
  • the present invention provides a means of realizing at least for all that is known at the present time the length of the long-wavelength laser radiation and for all the rest of the world * .
  • ⁇ a ⁇ ig. 1 schematically shown, an entire section of the Lazer with the wide area of radiation generation, performed in the form of a mesentery.
  • Fig. 3 a partition of the distribution of the impurities in the indicated consumer circuit is shown.
  • Fig. 4 shows the dependencies of the width of the modulation bandwidth. a level of -3 dB of radiated power for Lazers made from heterostructures, which are different from the various ⁇ / ⁇ components.
  • Fig. 7 a diagram of the direction of the Lazer in the plane, the parallel plane of the input circuit is shown, which is connected to the receiver at the same time.
  • Fig. 8 shows a radiation pattern of the Laser and various levels of the output power.
  • ge ⁇ e ⁇ s ⁇ u ⁇ u ⁇ e 3 were vy ⁇ lneny ⁇ - ⁇ i ⁇ a ⁇ g ⁇ anichi ⁇ elnye ⁇ dsl ⁇ i ⁇ g ⁇ 5 ⁇ azlichn ⁇ y ⁇ ntsen ⁇ atsiey n ⁇ si ⁇ eley ⁇ , izmenyaem ⁇ y in dia ⁇ az ⁇ ne ⁇ 4 • U 17 cm "3 d ⁇ 1 • U 19 cm” 3 ⁇ n ⁇ e ⁇ nye values ⁇ ntsen ⁇ atsii n ⁇ si ⁇ eley ⁇ for ⁇ ime ⁇ v 1 -. 6 u ⁇ azany in .
  • the plate was pinned to crystals with a long output of 200 to 1000 ⁇ m, which was soldered to a copper device (not for use in connection with other products).
  • a copper device not for use in connection with other products.
  • ⁇ ( ⁇ • ⁇ / ⁇ _) ° ' 5 , where ⁇ is the constant gain, see • ⁇ m / ⁇ , ⁇ is the radiation power, mt, ⁇ _ is the length of the source, ⁇ m.
  • Figures 5-8 and in the Table show the results of studies of the parameters of the Lazers without affecting them at high-speed modulation.
  • ⁇ The standard product (hereinafter “ ⁇ ”) of the LD manufactured from the part No. 2541 and operated in continuous mode is depicted in FIG. 4.
  • Lazer 1 had a conversion factor of 7% ' and 95% on the front and rear, corresponding to ' n.
  • linearity ⁇ are stored up to a capacity of 180 mt. It is worth noting that the duration of the LD service is generally higher than the break, but usually did not exceed 2 hours, while the average is slightly lower.
  • P ⁇ i e ⁇ m LD had ug ⁇ l ⁇ as ⁇ dim ⁇ s ⁇ i ⁇ in ve ⁇ i ⁇ aln ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i ⁇ yad ⁇ a 40 °, ⁇ .e. d ⁇ s ⁇ a ⁇ chn ⁇ siln ⁇ e ⁇ g ⁇ anichenie sve ⁇ v ⁇ y v ⁇ lny in v ⁇ ln ⁇ v ⁇ de.
  • the emission spectra of the obtained LD are different from the different output levels, and the registered ones: 21 - 2 mn, 22 - only 70 mn, and only 23 mn.
  • the capacities ⁇ exited from 2 up to 180 msec are single-frequency, i.e. ⁇ assi ⁇ 116 ⁇ ⁇ ⁇ admirably admirably admirably admirably admirably admirably admirably admirably admiration ⁇ ⁇ ⁇ ⁇ equal to ⁇ a step of -180 m effort per ⁇ (see Fig. 5) was observed, and a higher rate was observed. At this point, in the radiation spectrum, additional intensity maxima were revealed.
  • the aforementioned facts make it possible to say that the manifestation of non-linearity is caused by an effective hole burning effect.
  • P ⁇ edl ⁇ zhennye is ⁇ chni ⁇ i radiation is ⁇ lzuyu ⁇ sya in v ⁇ l ⁇ nn ⁇ - ⁇ iches ⁇ i ⁇ sis ⁇ ema ⁇ communication and ⁇ e ⁇ edachi in ⁇ matsii in ⁇ iches ⁇ i ⁇ sve ⁇ s ⁇ s ⁇ ny ⁇ vychisli ⁇ elny ⁇ and ⁇ mmu ⁇ atsi ⁇ nny ⁇ sis ⁇ ema ⁇ , ⁇ y ⁇ y ⁇ iches ⁇ y communication, sis ⁇ ema ⁇ ⁇ iches ⁇ y ⁇ amya ⁇ i, s ⁇ e ⁇ s ⁇ ii and ⁇ a ⁇ zhe for na ⁇ ach ⁇ i ⁇ ve ⁇ d ⁇ elny ⁇ and ⁇ L ⁇ Y ⁇ laze ⁇ v, ⁇ i s ⁇ zdanii laze ⁇ n ⁇ g ⁇ ⁇ e ⁇ n ⁇ l ⁇ giches ⁇ g ⁇ ⁇ b ⁇ ud ⁇ vaniya, meditsins ⁇ g ⁇ ⁇ b

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

L'invention porte sur un procédé de régulation de la bande de fréquence utile de modulation de lasers à injection, notamment de lasers haute fréquence, monomode et monofréquence. Ce procédé consiste à modifier le dopage des couches de base du confinement optique maximal, plus près d'une couche active, en intervenant sur le rapport des concentrations P/N (trous de la couche de base du confinement optique maximal à conductivité du type p, du côté du type p/électrons de couche de base du confinement optique maximal à conductivité du type p, du côté du type p (rapport P/N). On choisit la concentration dans une plage de 4•10?17 cm-3 à 1•1019 cm-3¿ pour P, la concentration dans une plage de 2•10?17 cm-3 à 2•1018 cm-3¿ pour N, le rapport P/N étant supérieur à 1. On veillera notamment à maintenir un niveau d'impuretés de base entre les couches de base dopées du confinement optique maximal, avoisinant la couche active, y compris cette dernière, la zone de charge d'une hétérojonction p-i-n ne dépassant pas les limites des couches de base dopées du confinement optique maximal.
PCT/RU2001/000291 2000-08-30 2001-07-16 Amelioration d'une bande de frequence utile de modulation laser Ceased WO2002019483A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276806A AU2001276806A1 (en) 2000-08-30 2001-07-16 Method for increasing laser modulation bandwidth

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2000122627A RU2176842C1 (ru) 2000-08-30 2000-08-30 Способ регулирования диапазона рабочих частот лазерной модуляции
RU2000122627 2000-08-30

Publications (2)

Publication Number Publication Date
WO2002019483A2 true WO2002019483A2 (fr) 2002-03-07
WO2002019483A3 WO2002019483A3 (fr) 2003-02-13

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Application Number Title Priority Date Filing Date
PCT/RU2001/000291 Ceased WO2002019483A2 (fr) 2000-08-30 2001-07-16 Amelioration d'une bande de frequence utile de modulation laser

Country Status (3)

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AU (1) AU2001276806A1 (fr)
RU (1) RU2176842C1 (fr)
WO (1) WO2002019483A2 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
SU1831213A1 (ru) * 1990-08-22 1996-09-27 НИИ "Полюс" Способ изготовления инжекционного лазера
JP3481458B2 (ja) * 1998-05-14 2003-12-22 アンリツ株式会社 半導体レーザ

Also Published As

Publication number Publication date
AU2001276806A1 (en) 2002-03-13
WO2002019483A3 (fr) 2003-02-13
RU2176842C1 (ru) 2001-12-10

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