WO2002019483A3 - Amelioration d'une bande de frequence utile de modulation laser - Google Patents

Amelioration d'une bande de frequence utile de modulation laser Download PDF

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Publication number
WO2002019483A3
WO2002019483A3 PCT/RU2001/000291 RU0100291W WO0219483A3 WO 2002019483 A3 WO2002019483 A3 WO 2002019483A3 RU 0100291 W RU0100291 W RU 0100291W WO 0219483 A3 WO0219483 A3 WO 0219483A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical confinement
concentration
maximal optical
underlayers
confining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/RU2001/000291
Other languages
English (en)
Russian (ru)
Other versions
WO2002019483A2 (fr
Inventor
Aleksander Aleksandrov Chelnyy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Original Assignee
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod filed Critical Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Priority to AU2001276806A priority Critical patent/AU2001276806A1/en
Publication of WO2002019483A2 publication Critical patent/WO2002019483A2/fr
Publication of WO2002019483A3 publication Critical patent/WO2002019483A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

L'invention porte sur un procédé de régulation de la bande de fréquence utile de modulation de lasers à injection, notamment de lasers haute fréquence, monomode et monofréquence. Ce procédé consiste à modifier le dopage des couches de base du confinement optique maximal, plus près d'une couche active, en intervenant sur le rapport des concentrations P/N (trous de la couche de base du confinement optique maximal à conductivité du type p, du côté du type p/électrons de couche de base du confinement optique maximal à conductivité du type p, du côté du type p (rapport P/N). On choisit la concentration dans une plage de 4•10?17 cm-3 à 1•1019 cm-3¿ pour P, la concentration dans une plage de 2•10?17 cm-3 à 2•1018 cm-3¿ pour N, le rapport P/N étant supérieur à 1. On veillera notamment à maintenir un niveau d'impuretés de base entre les couches de base dopées du confinement optique maximal, avoisinant la couche active, y compris cette dernière, la zone de charge d'une hétérojonction p-i-n ne dépassant pas les limites des couches de base dopées du confinement optique maximal.
PCT/RU2001/000291 2000-08-30 2001-07-16 Amelioration d'une bande de frequence utile de modulation laser Ceased WO2002019483A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276806A AU2001276806A1 (en) 2000-08-30 2001-07-16 Method for increasing laser modulation bandwidth

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2000122627A RU2176842C1 (ru) 2000-08-30 2000-08-30 Способ регулирования диапазона рабочих частот лазерной модуляции
RU2000122627 2000-08-30

Publications (2)

Publication Number Publication Date
WO2002019483A2 WO2002019483A2 (fr) 2002-03-07
WO2002019483A3 true WO2002019483A3 (fr) 2003-02-13

Family

ID=20239624

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2001/000291 Ceased WO2002019483A2 (fr) 2000-08-30 2001-07-16 Amelioration d'une bande de frequence utile de modulation laser

Country Status (3)

Country Link
AU (1) AU2001276806A1 (fr)
RU (1) RU2176842C1 (fr)
WO (1) WO2002019483A2 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
EP0959540A2 (fr) * 1998-05-14 1999-11-24 Anritsu Corporation Laser à semi-conducteur à puissance élevée

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1831213A1 (ru) * 1990-08-22 1996-09-27 НИИ "Полюс" Способ изготовления инжекционного лазера

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
EP0959540A2 (fr) * 1998-05-14 1999-11-24 Anritsu Corporation Laser à semi-conducteur à puissance élevée

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
RALSTON J D ET AL: "LOW-BIAS-CURRENT DIRECT MODULATION UP TO 33 GHZ IN INGAAS/GAAS/ALGAAS PSEUDOMORPHIC MQWRIDGE-WAVEGUIDE LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 6, no. 9, 1 September 1994 (1994-09-01), pages 1076 - 1079, XP000468068, ISSN: 1041-1135 *
WRIGHT A P ET AL: "22 GHZ-BANDWIDTH 1.5 UM COMPRESSIVELY STRAINED INGAASP MQW RIDGE-WAVEGUIDE DFB LASERS", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 29, no. 21, 14 October 1993 (1993-10-14), pages 1848 - 1849, XP000404312, ISSN: 0013-5194 *

Also Published As

Publication number Publication date
AU2001276806A1 (en) 2002-03-13
RU2176842C1 (ru) 2001-12-10
WO2002019483A2 (fr) 2002-03-07

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