WO2002076880A3 - Verfahren zur herstellung von mikromechanischen sensoren und damit hergestellte sensoren - Google Patents

Verfahren zur herstellung von mikromechanischen sensoren und damit hergestellte sensoren

Info

Publication number
WO2002076880A3
WO2002076880A3 PCT/DE2002/000883 DE0200883W WO02076880A3 WO 2002076880 A3 WO2002076880 A3 WO 2002076880A3 DE 0200883 W DE0200883 W DE 0200883W WO 02076880 A3 WO02076880 A3 WO 02076880A3
Authority
WO
WIPO (PCT)
Prior art keywords
sensors
micromechanic
producing
produced
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/000883
Other languages
English (en)
French (fr)
Other versions
WO2002076880A2 (de
Inventor
Hubert Benzel
Heribert Weber
Hans Artmann
Frank Schaefer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to JP2002576148A priority Critical patent/JP2004531882A/ja
Priority to EP02729780A priority patent/EP1373129A2/de
Priority to US10/472,650 priority patent/US7045382B2/en
Publication of WO2002076880A2 publication Critical patent/WO2002076880A2/de
Anticipated expiration legal-status Critical
Publication of WO2002076880A3 publication Critical patent/WO2002076880A3/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0116—Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)

Abstract

Es wird ein Verfahren zur Herstellung von mikromechanischen Sensoren und damit hergestellte Sensoren vorgeschlagen, bei denen in ein Halbleitersubstrat (1) Öffnungen (2) eingebracht werden. Nach dem Einbringen der Öffnungen (2) in das Halbleitersubstrat (1) erfolgt eine Temperaturnachbehandlung, bei der die öffnungen (2) zu Hohlräumen in der Tiefe des Substrats (1) umgewandelt werden.
PCT/DE2002/000883 2001-03-22 2002-03-13 Verfahren zur herstellung von mikromechanischen sensoren und damit hergestellte sensoren Ceased WO2002076880A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002576148A JP2004531882A (ja) 2001-03-22 2002-03-13 マイクロマシンセンサを製造する方法及びこの方法により製造されるセンサ
EP02729780A EP1373129A2 (de) 2001-03-22 2002-03-13 Verfahren zur herstellung von mikromechanischen sensoren und damit hergestellte sensoren
US10/472,650 US7045382B2 (en) 2001-03-22 2002-03-13 Method for producing micromechanic sensors and sensors produced by said method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10114036.3 2001-03-22
DE10114036A DE10114036A1 (de) 2001-03-22 2001-03-22 Verfahren zur Herstellung von mikromechanischen Sensoren und damit hergestellte Sensoren

Publications (2)

Publication Number Publication Date
WO2002076880A2 WO2002076880A2 (de) 2002-10-03
WO2002076880A3 true WO2002076880A3 (de) 2003-10-02

Family

ID=7678560

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000883 Ceased WO2002076880A2 (de) 2001-03-22 2002-03-13 Verfahren zur herstellung von mikromechanischen sensoren und damit hergestellte sensoren

Country Status (5)

Country Link
US (1) US7045382B2 (de)
EP (1) EP1373129A2 (de)
JP (1) JP2004531882A (de)
DE (1) DE10114036A1 (de)
WO (1) WO2002076880A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7294536B2 (en) * 2000-07-25 2007-11-13 Stmicroelectronics S.R.L. Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
FR2823998B1 (fr) * 2001-04-25 2004-01-02 Centre Nat Rech Scient Matrice de biocapteurs et son procede de fabrication
EP2280412A3 (de) * 2002-11-29 2011-02-16 STMicroelectronics S.r.l. Halbleitersubstrat mit mindestens einem vergrabenen Hohlraum
DE10347215A1 (de) 2003-10-10 2005-05-12 Bosch Gmbh Robert Mikromechanischer Sensor
EP1577656B1 (de) 2004-03-19 2010-06-09 STMicroelectronics Srl Halbleiterdrucksensor und Verfahren zur Herstellung
US7157350B2 (en) * 2004-05-17 2007-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming SOI-like structure in a bulk semiconductor substrate using self-organized atomic migration
DE102004043357B4 (de) * 2004-09-08 2015-10-22 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Sensorelements
DE102004043356A1 (de) 2004-09-08 2006-03-09 Robert Bosch Gmbh Sensorelement mit getrenchter Kaverne
EP1684079A1 (de) * 2005-01-25 2006-07-26 STMicroelectronics S.r.l. Piezoresistiver Beschleunigungssensor mit Masse auf einer Membran, und Herstellungsverfahren
EP1719993A1 (de) * 2005-05-06 2006-11-08 STMicroelectronics S.r.l. Integrierter Differenzdrucksensor und Verfahren zu dessen Herstellung
DE102005060855A1 (de) 2005-12-20 2007-06-28 Robert Bosch Gmbh Mikromechanischer kapazitiver Druckwandler und Herstellungsverfahren
JP2007298407A (ja) * 2006-04-28 2007-11-15 Matsushita Electric Works Ltd 静電容量式センサ
DE102006028435A1 (de) 2006-06-21 2007-12-27 Robert Bosch Gmbh Sensor und Verfahren zu seiner Herstellung
FR2909368A1 (fr) * 2006-12-21 2008-06-06 Commissariat Energie Atomique Procede de realisation de micro-cavites
WO2010052682A2 (en) * 2008-11-10 2010-05-14 Nxp B.V. Mems with poly-silicon cap layer
US20100187572A1 (en) * 2009-01-26 2010-07-29 Cho Hans S Suspended mono-crystalline structure and method of fabrication from a heteroepitaxial layer
JP5426437B2 (ja) * 2010-03-11 2014-02-26 ローム株式会社 圧力センサおよび圧力センサの製造方法
CN102295266B (zh) * 2011-06-30 2015-03-04 西北工业大学 一种获得精密齐整棱边的mems划片方法
JP5935352B2 (ja) 2012-01-27 2016-06-15 富士電機株式会社 Ｓｏｎ構造を有する物理量センサの製造方法。
US9136328B2 (en) * 2012-10-09 2015-09-15 Infineon Technologies Dresden Gmbh Silicon on nothing devices and methods of formation thereof
US20150122039A1 (en) * 2013-11-06 2015-05-07 Honeywell International Inc. Silicon on nothing pressure sensor
US10364143B2 (en) 2014-12-18 2019-07-30 Stmicroelectronics S.R.L. Integrated micro-electromechanical device of semiconductor material having a diaphragm, such as a pressure sensor and an actuator
FR3049946B1 (fr) * 2016-04-06 2018-04-13 Centre National De La Recherche Scientifique Cnrs Procede de fabrication d’une structure micromecanique en carbure de silicium comportant au moins une cavite
US11473991B2 (en) * 2019-12-29 2022-10-18 Measurement Specialties, Inc. Low-pressure sensor with stiffening ribs

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993143A (en) * 1989-03-06 1991-02-19 Delco Electronics Corporation Method of making a semiconductive structure useful as a pressure sensor
US5840597A (en) * 1993-03-22 1998-11-24 Texas Instruments Incorporated Method of making a semiconductor device force and/or acceleration sensor
US6038928A (en) * 1996-10-07 2000-03-21 Lucas Novasensor Miniature gauge pressure sensor using silicon fusion bonding and back etching
US6076404A (en) * 1993-06-03 2000-06-20 Robert Bosch Gmbh Micromechanical sensor including a single-crystal silicon support
EP1043770A1 (de) * 1999-04-09 2000-10-11 STMicroelectronics S.r.l. Herstellung von vergrabenen Hohlräumen in einer einkristallinen Halbleiterscheibe
US6190571B1 (en) * 1996-12-20 2001-02-20 Aisin Seiki Kabushiki Kaisha Semiconductor micromachine and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法
US5241615A (en) 1992-06-18 1993-08-31 Corning Incorporated Optical waveguide fiber with very thin titania-silica outer cladding layer
DE4318466B4 (de) * 1993-06-03 2004-12-09 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Sensors
SE9304145D0 (sv) * 1993-12-10 1993-12-10 Pharmacia Lkb Biotech Sätt att tillverka hålrumsstrukturer
JP3478895B2 (ja) 1995-02-23 2003-12-15 株式会社東海理化電機製作所 加速度センサ及びその製造方法
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
JP3762136B2 (ja) * 1998-04-24 2006-04-05 株式会社東芝 半導体装置
ITVA20000042A1 (it) * 2000-12-15 2002-06-15 St Microelectronics Srl Sensore di pressione monoliticamente integrato e relativo processo direalizzazione.

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993143A (en) * 1989-03-06 1991-02-19 Delco Electronics Corporation Method of making a semiconductive structure useful as a pressure sensor
US5840597A (en) * 1993-03-22 1998-11-24 Texas Instruments Incorporated Method of making a semiconductor device force and/or acceleration sensor
US6076404A (en) * 1993-06-03 2000-06-20 Robert Bosch Gmbh Micromechanical sensor including a single-crystal silicon support
US6038928A (en) * 1996-10-07 2000-03-21 Lucas Novasensor Miniature gauge pressure sensor using silicon fusion bonding and back etching
US6190571B1 (en) * 1996-12-20 2001-02-20 Aisin Seiki Kabushiki Kaisha Semiconductor micromachine and manufacturing method thereof
EP1043770A1 (de) * 1999-04-09 2000-10-11 STMicroelectronics S.r.l. Herstellung von vergrabenen Hohlräumen in einer einkristallinen Halbleiterscheibe

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MIZUSHIMA I ET AL: "EMPTY-SPACE-IN-SILICON TECHNIQUE FOR FABRICATING A SILICON-ON-NOTHING STRUCTURE", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 77, no. 20, 13 November 2000 (2000-11-13), pages 3290 - 3292, XP000970310, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
DE10114036A1 (de) 2002-10-02
JP2004531882A (ja) 2004-10-14
US20040152228A1 (en) 2004-08-05
WO2002076880A2 (de) 2002-10-03
EP1373129A2 (de) 2004-01-02
US7045382B2 (en) 2006-05-16

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