WO2003009301A1 - Storage device - Google Patents
Storage device Download PDFInfo
- Publication number
- WO2003009301A1 WO2003009301A1 PCT/JP2001/006191 JP0106191W WO03009301A1 WO 2003009301 A1 WO2003009301 A1 WO 2003009301A1 JP 0106191 W JP0106191 W JP 0106191W WO 03009301 A1 WO03009301 A1 WO 03009301A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- data
- address
- cell array
- memory cell
- data register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/106—Data output latches
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/0292—User address space allocation, e.g. contiguous or non contiguous base addressing using tables or multilevel address translation means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1087—Data input latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/107—Serial-parallel conversion of data or prefetch
Definitions
- the present invention relates to a storage device used in a mobile phone or the like, and more particularly, to a storage device that inputs and outputs data serially.
- FIG. 5 is a diagram illustrating an example of a circuit configuration of a conventional mobile phone.
- This mobile phone transmits serial data between a CPU (Central Processing Unit) 100 that controls the entire mobile phone, a storage device 200 that stores applications and moving images, and a storage device 200.
- CPU Central Processing Unit
- CPU 100 accesses program memory 400 or work memory 500
- the serial interface circuit 300 When the CPU 100 accesses the storage device 200, the serial interface circuit 300 performs serial / parallel conversion to enable the access.
- the storage device 200 includes a memory cell array 201 for storing an application program or moving image data as user data, and a data register 2 for temporarily storing data when the memory cell array 201 is accessed. 0 2 and serial An input / output control for inputting / outputting serial data to / from the interface circuit 300, a command input through the input / output control unit 203 is analyzed and a storage device is controlled. Including t
- Array 201 is used for NAND or AND flash memory.
- the CPU 100 When the CPU 100 writes data to the storage device 200, the CPU 100 issues a write command to the serial interface circuit 300 via the CPU bus, and then writes the address of the memory cell array 201 and the write data to the serial interface. Output to circuit 300.
- the serial interface circuit 300 converts them into serial data and outputs the serial data to the input / output control unit 203.
- Output control unit 203 converts the Adoresu Rye bets command and the memory cell array 201 received from the serial interface circuit 300 into parallel data, and outputs the command analysis / / control unit 204. Also, the input / output control unit 203 converts write data received from the serial interface circuit 300 into parallel data and writes the parallel data into the data register 202.
- the command analysis control unit 204 When analyzing the command received from the input / output control unit 203 and recognizing that the command is a write command, the command analysis control unit 204 outputs an address to the memory cell array 201 and stores the address in the data register 202. The written write data is written to the memory cell 201.
- the CPU 100 When the CPU 100 reads data from the storage device 200, the CPU 100 issues a read command to the serial interface circuit 300 via the CPU bus, and then outputs the address of the memory cell array 201 to the serial interface circuit 300. .
- the serial interface circuit 300 converts them into serial data and outputs the serial data to the input / output control unit 203.
- the input / output control unit 203 converts the read command received from the serial interface circuit 300 and the address of the memory cell array 201 into parallel data, Output to the command analysis control section 204.
- the command analysis control unit 204 analyzes the command received from the input / output I 03 and recognizes that it is a read command, outputs an address to the memory cell array 201, and
- the input / output control unit 203 stores the data written in the data register 202.
- the serial interface circuit 300 converts the serial data received from the input / output control unit 203 into parallel data, and outputs it to the CPU 100 as read data.
- the storage device 200 stores application programs, moving image data, and the like as user data. When the CPU 100 reads data from the storage device 200 as described above, a read command is issued. And read the data. Therefore, the CPU 100 cannot access the data stored in the storage device 200 at random, so that when the application program stored in the storage device 200 is executed, the random access is temporarily stopped. After transferring the abbreviated program to a possible storage device, it was necessary to execute the application program, which caused a problem when the processing speed was reduced.
- the present invention has been made to solve the above problems, and a first object of the present invention is to provide a storage device capable of improving the processing speed of a mobile phone or the like.
- a second object is to provide a storage device capable of reducing the cost and mounting area of components in a device such as a mobile phone. Disclosure of the invention
- the storage device temporarily stores the memory cell array and memory cell data, and can be accessed in parallel from outside
- the address conversion unit converts the logical address input from the outside into the physical address of the data register and outputs it to the data register
- the external CPU can access the data register at random.
- the external CPU can randomly access the memory cell array, and the processing speed of a device such as a mobile phone equipped with a storage device can be improved.
- a program or the like that realizes a main function can be stored in the memory cell array. The mounting area can be reduced.
- the storage device further includes an address conversion table in which a logical start address of the memory cell array, a logical end address of the memory cell array, and a physical start address of the data register are registered for each area of the memory cell array. , The result of subtraction between the logical address input from the outside and the logical start address registered in the address conversion table, the result of the subtraction between the logical end address registered in the address conversion table and the logical address input from the outside, and the address The physical address of the data register is calculated based on the physical start address registered in the conversion table.
- the storage device further includes a data buffer different from the data register for temporarily storing data in the memory cell array, and the input / output buffer converts data stored in the data buffer into serial data and outputs the serial data to the outside I do. Therefore, it is possible to convert the data stored in the memory cell array into serial data and output the serial data.
- the command analysis controller when receiving the second data transfer command from the input / output buffer, transfers the data in the data register to the data buffer, and then stores the data stored in the data buffer in the memory cell array. Forward.
- a method of controlling a storage device including a memory cell array and a data register that temporarily stores data in the memory cell array and that can be accessed in parallel from the outside, comprising: Converting the serial data into a parallel data command; analyzing the command to control data transfer between the memory cell array and the data register; and converting an externally input logical address into the data register. Converting to a physical address and outputting to a data register.
- the external CPU can access the data register at random. As a result, the external CPU can randomly access the memory cell array, and the processing speed of a device such as a mobile phone equipped with a storage device can be improved. In addition, since an external CPU can randomly access the memory cell array, programs that implement the main functions can be stored in the memory cell array, and the cost and mounting area of components of devices such as mobile phones Can be reduced.
- an externally input logical address is converted to a physical address of a data register.
- the step of converting the data into a data register and outputting the data to the data register is as follows: the logic input from the outside: the result of subtraction from the logical head address of the memory cell array registered in advance, the logical tail address of the memory cell array registered And from outside
- the storage device further includes a data buffer different from the data register for temporarily storing data of the memory cell array, and the control method of the storage device further includes the step of converting the data stored in the data buffer into serial data. And outputting to the outside.
- data stored in the memory cell array can be converted into serial data and output to the outside.
- the step of analyzing the command and controlling the data transfer between the memory cell array and the data register includes, upon receiving the first data transfer command, transferring the data of the memory cell array to the data buffer, It includes the step of transferring the data stored in the buffer to the data register.
- the step of analyzing the command and controlling the data transfer between the memory cell array and the data register includes: receiving a second data transfer command, transferring the data in the data register to the data buffer, Transferring the data stored in the buffer to the memory cell array.
- FIG. 1 is a diagram showing a circuit configuration of a mobile phone according to an embodiment of the present invention.
- 2A to 2F are diagrams for the command sequence of the storage device 2 in the embodiment of the present invention.
- FIG. 4 is a diagram illustrating write data of the storage device 2 according to the embodiment of the present invention.
- FIG. 5 is a diagram showing a circuit configuration of a conventional mobile phone. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a diagram showing a circuit configuration of a mobile phone according to an embodiment of the present invention.
- the mobile phone includes a CPU 1 for controlling the entire mobile phone, a storage device 2 for storing programs, application programs, video data, and the like that implement the main functions of the mobile phone, and a storage device 2. And a serial interface circuit 3 for inputting / outputting serial data.
- the storage device 2 is a memory cell array 21 for storing programs for realizing the main functions of a mobile phone, an application program as user data, moving image data, and the like, and data is temporarily stored when the memory cell array 21 is accessed.
- Data register 25 and CPU 1 when reading the program or data stored in the second data register 25.
- An address conversion unit 26 for generating an address of the second data register 25; and a control unit for controlling the second data register 25 and the address conversion unit 26 in accordance with an instruction from the command analysis control unit 24. 27.
- the memory cell array 21 uses NAND or AND flash memory. It is composed.
- the memory cell array 21 is constituted by a large-capacity flash J of about 32 MB, but is not limited to this.
- the data register 2 2 has the CPU 1
- the first data register is constituted by an SRAM (Static Random Access Memory) of about 512 bits, but is not limited to this. Note that data transfer between the first data register 22 and the memory cell array 21 is performed at a time in units of 512 bits.
- SRAM Static Random Access Memory
- the input / output buffer 23 converts serial data into parallel data by buffering serial data output from the serial interface circuit 3.
- the input / output buffer 23 stores the buffered data by one bit.
- the second data register 25 temporarily stores data when the CPU 1 accesses data stored in the memory cell array 21 in parallel.
- the second data register 25 is constituted by an S RAM of about 2 MB to 8 MB. Data transfer between the second data register 25 and the first data register 21 is performed at a time in units of 512 bits under the control of the control unit 27.
- the address conversion unit 26 converts the logical address of the memory cell array 21 output from the CPU 1 into a physical address of the second data register 25.
- the address translation unit 26 has an internal address translation table, and translates a logical address into a physical address according to the contents of the address translation table.
- the memory cell array 21 is divided into several areas, and the data of the memory cell array 21 is mapped to the second data register 25 for each area.
- the logical address conversion table contains the logical start address of the memory cell array 21 area to be accessed by the CPU 1, the logical end address of the memory cell area 21 to be accessed by the CPU 1, and the memory cell array.
- 2 Area 1 is Address in the second data register 25 when the data is transferred to the second data register 25, and the address in the second data register 25 when the area of the memory cell array 21 is the second data register 25 1.
- the logical address is output from CPU1.
- the conversion unit 26 performs address conversion in the following procedure.
- the control unit 27 controls data transfer between the first data register 22 and the second data register 25.
- the command analysis control unit 24 sends the data from the first data register 22 to the second data register 25.
- a transfer request is notified.
- the control unit 27 refers to the address conversion table in the address conversion unit 26 and extracts the physical head address of the empty area of the second data register 25.
- the control section 27 transfers the data stored in the first data register 22 to the second data register 25 in order from the physical head address of the free area of the second data register 25. .
- Command analysis When all data specified by the control unit 24 has been transferred from the first data register 22 to the second data register 25, the area of the second data register 25 where the data has been transferred The physical start address and the physical end address are registered in the address conversion table. Finally, the control unit 27 notifies the command analysis / ⁇ control unit 24 of the completion of the data transfer.
- the command analysis / ⁇ control unit 24 sends the data from the second data register 25 to the first data register 22. Is notified.
- the control unit 27 When the transfer of the data in the area of the obtained second data register 25 to the first data register 22 is completed, the control unit 27 notifies the command analysis control unit 2 of the completion of the transfer.
- 2A to 2F show the command sequence of the command analysis / control unit 24.
- FIG. Figure 2A shows the data transfer of memory cell array 21.
- FIG. 2B shows a command sequence of the data write of the memory cell array 21.
- the data write command (2 Oh) and the address of the memory cell array 21 are input from the input / output buffer 23 to the command analysis control unit 24, the subsequent data is written to the first data register 22. It is.
- Command analysis The Z control unit 24 writes the data stored in the first data register 22 to the specified address of the memory cell array 21. Finally, a status indicating whether or not the processing has been completed is output to the serial interface circuit 3.
- FIG. 2C shows a command sequence for all erasure of the memory cell array 21.
- the command analysis / control unit 24 receives the command for erasing (FO h) from the input / output buffer 23 to the Z control unit 24, the command analysis / control unit 24 controls the memory cell array 21 and all the memory cell arrays 21 Erase the data of. Finally, a status indicating whether or not the processing has been normally completed is output to the serial interface circuit 3.
- FIG. 2D is a diagram showing a command sequence for block erasure of the memory cell array 21.
- the command analysis Z control unit 24 When the block erasing command (3 Oh) and the block designation of the memory cell array 21 are input to the command analysis Z control unit 24 from the input / output buffer 23, the command analysis control unit 24 reads the memory cell array 21. Control to erase the data in the specified block of memory cell array 21. Finally, the process is completed successfully Is output to the serial interface circuit 3.
- FIG. 5 is a diagram showing a data transfer sequence from the memory cell array 21 to the second data register 25. I / O buffer 2 3 power
- the Z control unit 24 has a second data register from the memory cell array 21;
- the command analysis control unit 24 transfers the data at the specified address of the memory cell array 21 to the first data register 22. Then, the command analysis // control unit 24 notifies the control unit 27 of a request for data transfer from the first data register 22 to the second data register 25. At this time, the command analysis Z control unit 24 outputs the specified logical address to the address conversion unit 26. Finally, a status indicating whether or not the processing has been completed is output to the serial interface circuit 3.
- FIG. 2F is a diagram showing a command sequence of data transfer from the second data register 25 to the memory cell array 21.
- a command for data transfer (4Dh) from the second data register 25 to the memory cell array 21 and the address and logical address of the memory cell array 21 are input to the command analysis controller 24 from the input / output buffer 23. Then, the command analysis controller 24 outputs the specified logical address to the address converter 26.
- Command analysis The Z control unit 24 notifies the control unit 27 of a request to transfer data from the second data register 25 to the first data register 22. Then, the data stored in the first data register 22 is transferred to the specified address of the memory cell array 21. Finally, a status indicating whether or not the processing has been completed is output to the serial interface circuit 3.
- FIG. 3 is a flowchart for explaining a processing procedure at the time of read data of the storage device 2 according to the embodiment of the present invention.
- the CPU 1 issues a data transfer command from the memory cell array 21 to the second data register 25 via the serial interface circuit 3, the physical address range of the memory cell array 21 and the logic to read via the CPU bus.
- the address is output to the input / output buffer 23 (S11).
- the command analysis / ⁇ control unit 24 controls the memory cell array 21 to transfer data in the specified physical address range to the first data register 22. Outputs the logical address to be read to the address conversion unit 26 via the CPU bus.
- the Z control unit 24 sends the first data to the control unit 27.
- the destination of the transfer to the second data register 25 in the dress converter 26 is ⁇
- the address conversion unit 26 includes a logical start address and a logical end address of the area of the memory cell array 21 to be accessed by the CPU 1 and a physical start address and a physical end address in the second data register 25 to which data is transferred. The address and the address are registered in the address conversion table (S14). Then, the command analysis / control unit 24 notifies the CPU 1 via the input / output buffer 23 and the serial interface circuit 3 that the data writing to the second data register 25 is completed (S15). .
- the address conversion unit 26 refers to the address conversion table and converts the logical address into data. Is converted to the physical address of the second data register 25 to which the data is transferred, and is output to the second data register 25 (S17). CPU 1 reads the data output from second data register 25 via the CPU bus (S18). Then, the process returns to step S16 to repeat the subsequent processes.
- FIG. 4 is a flowchart for explaining a processing procedure at the time of write data of the storage device 2 in the embodiment of the present invention.
- the CPU 1 sends a data transfer command from the second data register 25 to the memory cell array 21 via the serial interface circuit 3, a logical address range of data to be written to the memory cell array 21, and a memory.
- the physical address of the cell array 21 is output to the input / output buffer 23 (S21).
- the Z control unit 24 instructs the control unit 27 to transfer the data in the second data register 25 to the first data register 22 (S22).
- the control unit 27 obtains the physical address range of the second data register 25 in which the data to be written is present from the address conversion unit 26, and acquires the physical address range from the second data register 25 to the first data register 25.
- the data to be written is transferred to the data register 22 (S23).
- control unit 27 issues a command analysis / "notifies the control unit 24" that the data is completed.
- a part of the data stored in the NAND type or AND type memory cell array 21 having a structure that cannot be randomly accessed can be randomly accessed in accordance with a serially input command.
- the relationship between the logical address output when the CPU 1 attempts to read the transfer data and the physical address of the transfer data in the second data register 25 is stored as address change information.
- the logical address is converted into a physical address in the second data register 25 based on the address conversion information, and the physical address is converted. Is transmitted in parallel to the CPU 1 via a data bus or the like.
- the command analysis control section 24 transfers data from the memory cell array 21 to the second data register 25 which can be accessed in parallel, and the address conversion section 26 converts the logical address output when CPU 1 accesses memory cell array 21 into the physical address of second data register 25 and outputs it to second data register 25.
- the CPU 1 can randomly access the data stored in the memory cell array 21 and can improve the processing speed of a mobile phone or the like equipped with a storage device.
- the CPU 1 can randomly access data stored in the memory cell array 21, programs for realizing main functions of the mobile phone can be stored in the memory cell array 21. It is no longer necessary to install a program memory. Therefore, the cost and mounting area of components such as mobile phones are reduced. It became possible to reduce.
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Memory System (AREA)
- Information Transfer Systems (AREA)
- Read Only Memory (AREA)
Description
Claims
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003514559A JPWO2003009301A1 (ja) | 2001-07-17 | 2001-07-17 | 記憶装置 |
| US10/380,157 US20040078513A1 (en) | 2001-07-17 | 2001-07-17 | Storage device |
| PCT/JP2001/006191 WO2003009301A1 (en) | 2001-07-17 | 2001-07-17 | Storage device |
| EP20010948053 EP1408508A1 (en) | 2001-07-17 | 2001-07-17 | Storage device |
| CN01815760A CN1459112A (zh) | 2001-07-17 | 2001-07-17 | 存储装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2001/006191 WO2003009301A1 (en) | 2001-07-17 | 2001-07-17 | Storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2003009301A1 true WO2003009301A1 (en) | 2003-01-30 |
| WO2003009301A9 WO2003009301A9 (en) | 2003-05-01 |
Family
ID=11737558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2001/006191 Ceased WO2003009301A1 (en) | 2001-07-17 | 2001-07-17 | Storage device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20040078513A1 (ja) |
| EP (1) | EP1408508A1 (ja) |
| JP (1) | JPWO2003009301A1 (ja) |
| CN (1) | CN1459112A (ja) |
| WO (1) | WO2003009301A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009071313A (ja) * | 2007-09-12 | 2009-04-02 | Samsung Electronics Co Ltd | 積層メモリ装置 |
| JP2014199679A (ja) * | 2006-12-22 | 2014-10-23 | コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッドConversant Intellectual Property Management Inc. | メモリデバイス |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4015867B2 (ja) * | 2002-03-27 | 2007-11-28 | 松下電器産業株式会社 | アドレス信号出力装置 |
| TWI224259B (en) * | 2003-09-08 | 2004-11-21 | Via Tech Inc | Method and related apparatus for clearing data in a memory device |
| JP2005190161A (ja) * | 2003-12-25 | 2005-07-14 | Matsushita Electric Ind Co Ltd | データ処理装置およびコンパイラ装置 |
| US7653777B2 (en) * | 2004-01-19 | 2010-01-26 | Trek Technology (Singapore) Pte Ltd. | Portable data storage device using a memory address mapping table |
| US7490182B2 (en) * | 2005-04-08 | 2009-02-10 | Panasonic Corporation | Switching control circuit provided with serial to parallel converter and storage unit, and radio communication apparatus using the same |
| US9594679B2 (en) * | 2008-05-01 | 2017-03-14 | Sandisk Il Ltd. | Flash cache flushing method and system |
| US8713248B2 (en) * | 2009-06-02 | 2014-04-29 | Nokia Corporation | Memory device and method for dynamic random access memory having serial interface and integral instruction buffer |
| KR102577999B1 (ko) * | 2018-05-31 | 2023-09-14 | 에스케이하이닉스 주식회사 | 집적 회로 |
| US12130755B2 (en) * | 2021-09-07 | 2024-10-29 | Micron Technology, Inc. | Serial interface for an active input/output expander of a memory sub-system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11242629A (ja) * | 1997-10-09 | 1999-09-07 | Matsushita Electric Ind Co Ltd | メモリシステム |
| JP2000163313A (ja) * | 1998-11-30 | 2000-06-16 | Ricoh Co Ltd | プログラム読出し制御装置およびシステム |
| JP2000182381A (ja) * | 1998-12-14 | 2000-06-30 | Mitsubishi Electric Corp | 一括消去型不揮発性メモリ |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW324101B (en) * | 1995-12-21 | 1998-01-01 | Hitachi Ltd | Semiconductor integrated circuit and its working method |
| JP2000048567A (ja) * | 1998-05-22 | 2000-02-18 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
| US6396744B1 (en) * | 2000-04-25 | 2002-05-28 | Multi Level Memory Technology | Flash memory with dynamic refresh |
-
2001
- 2001-07-17 JP JP2003514559A patent/JPWO2003009301A1/ja not_active Withdrawn
- 2001-07-17 EP EP20010948053 patent/EP1408508A1/en not_active Withdrawn
- 2001-07-17 WO PCT/JP2001/006191 patent/WO2003009301A1/ja not_active Ceased
- 2001-07-17 US US10/380,157 patent/US20040078513A1/en not_active Abandoned
- 2001-07-17 CN CN01815760A patent/CN1459112A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11242629A (ja) * | 1997-10-09 | 1999-09-07 | Matsushita Electric Ind Co Ltd | メモリシステム |
| JP2000163313A (ja) * | 1998-11-30 | 2000-06-16 | Ricoh Co Ltd | プログラム読出し制御装置およびシステム |
| JP2000182381A (ja) * | 1998-12-14 | 2000-06-30 | Mitsubishi Electric Corp | 一括消去型不揮発性メモリ |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014199679A (ja) * | 2006-12-22 | 2014-10-23 | コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッドConversant Intellectual Property Management Inc. | メモリデバイス |
| JP2009071313A (ja) * | 2007-09-12 | 2009-04-02 | Samsung Electronics Co Ltd | 積層メモリ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003009301A9 (en) | 2003-05-01 |
| EP1408508A1 (en) | 2004-04-14 |
| CN1459112A (zh) | 2003-11-26 |
| US20040078513A1 (en) | 2004-04-22 |
| JPWO2003009301A1 (ja) | 2004-11-11 |
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