WO2003012851A3 - Procede de gravure de couches ferroelectriques - Google Patents

Procede de gravure de couches ferroelectriques Download PDF

Info

Publication number
WO2003012851A3
WO2003012851A3 PCT/US2002/024346 US0224346W WO03012851A3 WO 2003012851 A3 WO2003012851 A3 WO 2003012851A3 US 0224346 W US0224346 W US 0224346W WO 03012851 A3 WO03012851 A3 WO 03012851A3
Authority
WO
WIPO (PCT)
Prior art keywords
containing gas
etching
ferroelectric layers
gas
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/024346
Other languages
English (en)
Other versions
WO2003012851A2 (fr
Inventor
Hideyuki Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2003012851A2 publication Critical patent/WO2003012851A2/fr
Publication of WO2003012851A3 publication Critical patent/WO2003012851A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)

Abstract

Un procédé de gravure d'une couche ferroélectrique consiste à graver une couche ferroélectrique à l'aide d'un gaz trichlorure de bore et d'au moins un gaz auxiliaire sélectionné dans le groupe formé par un gaz contenant du carbone et un gaz contenant de l'azote. Le gaz contenant du carbone peut être du CHF3 ou du C2H4. Le gaz contenant de l'azote peut être du N2 ou du NF3. Le procédé permet de réduire l'attaque chimique secondaire des couches ferroélectriques et, plus particulièrement, des couches ferroélectriques à base de PZT, ceci améliorant la performance électrique et la fiabilité des dispositifs réalisés avec ces dernières.
PCT/US2002/024346 2001-07-31 2002-07-31 Procede de gravure de couches ferroelectriques Ceased WO2003012851A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-232528 2001-07-31
JP2001232528A JP2003059906A (ja) 2001-07-31 2001-07-31 エッチング方法およびキャパシタを形成する方法

Publications (2)

Publication Number Publication Date
WO2003012851A2 WO2003012851A2 (fr) 2003-02-13
WO2003012851A3 true WO2003012851A3 (fr) 2003-04-24

Family

ID=19064442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/024346 Ceased WO2003012851A2 (fr) 2001-07-31 2002-07-31 Procede de gravure de couches ferroelectriques

Country Status (4)

Country Link
US (1) US20030047532A1 (fr)
JP (1) JP2003059906A (fr)
TW (1) TW565886B (fr)
WO (1) WO2003012851A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7217665B2 (en) * 2002-11-20 2007-05-15 Applied Materials, Inc. Method of plasma etching high-K dielectric materials with high selectivity to underlying layers
CN100559592C (zh) * 2003-04-15 2009-11-11 富士通微电子株式会社 半导体器件的制造方法
WO2004109773A2 (fr) * 2003-05-30 2004-12-16 Tokyo Electron Limited Procede et systeme permettant de graver un materiau a constante dielectrique elevee
US6867053B2 (en) * 2003-07-28 2005-03-15 Infineon Technologies Ag Fabrication of a FeRAM capacitor using a noble metal hardmask
KR100732026B1 (ko) 2005-04-08 2007-06-27 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법
JP4515956B2 (ja) * 2005-05-02 2010-08-04 株式会社日立ハイテクノロジーズ 試料のエッチング方法
US20100003828A1 (en) * 2007-11-28 2010-01-07 Guowen Ding Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas
JP2009266952A (ja) * 2008-04-23 2009-11-12 Seiko Epson Corp デバイスの製造方法及び製造装置
KR101338771B1 (ko) * 2009-09-09 2013-12-06 가부시키가이샤 알박 기판 처리 장치의 운전 방법
US10692759B2 (en) * 2018-07-17 2020-06-23 Applied Materials, Inc. Methods for manufacturing an interconnect structure for semiconductor devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
EP1001459A2 (fr) * 1998-09-09 2000-05-17 Texas Instruments Incorporated Circuit integré avec condensateur et son procédé de fabrication
US6100201A (en) * 1997-03-05 2000-08-08 Nec Corporation Method of forming a semiconductor memory device
WO2000049649A2 (fr) * 1999-02-17 2000-08-24 Applied Materials, Inc. Procede de prevention de la corrosion d'un materiau dielectrique
WO2001082344A2 (fr) * 2000-04-21 2001-11-01 Applied Materials, Inc. Procede de formation de motifs dans du titanate de plomb-zirconium et dans du titanate de baryum-strontium
WO2002015250A1 (fr) * 2000-08-11 2002-02-21 Infineon Technologies Ag Structuration de couches ferroelectriques

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232174B1 (en) * 1998-04-22 2001-05-15 Sharp Kabushiki Kaisha Methods for fabricating a semiconductor memory device including flattening of a capacitor dielectric film
US6620733B2 (en) * 2001-02-12 2003-09-16 Lam Research Corporation Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6559001B2 (en) * 2001-05-30 2003-05-06 International Business Machines Corporation Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
US6100201A (en) * 1997-03-05 2000-08-08 Nec Corporation Method of forming a semiconductor memory device
EP1001459A2 (fr) * 1998-09-09 2000-05-17 Texas Instruments Incorporated Circuit integré avec condensateur et son procédé de fabrication
WO2000049649A2 (fr) * 1999-02-17 2000-08-24 Applied Materials, Inc. Procede de prevention de la corrosion d'un materiau dielectrique
WO2001082344A2 (fr) * 2000-04-21 2001-11-01 Applied Materials, Inc. Procede de formation de motifs dans du titanate de plomb-zirconium et dans du titanate de baryum-strontium
WO2002015250A1 (fr) * 2000-08-11 2002-02-21 Infineon Technologies Ag Structuration de couches ferroelectriques

Also Published As

Publication number Publication date
TW565886B (en) 2003-12-11
WO2003012851A2 (fr) 2003-02-13
US20030047532A1 (en) 2003-03-13
JP2003059906A (ja) 2003-02-28

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