WO2004013886A1 - Procede et dispositif pour realiser un dispositif d'affichage d'images - Google Patents

Procede et dispositif pour realiser un dispositif d'affichage d'images Download PDF

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Publication number
WO2004013886A1
WO2004013886A1 PCT/JP2003/009685 JP0309685W WO2004013886A1 WO 2004013886 A1 WO2004013886 A1 WO 2004013886A1 JP 0309685 W JP0309685 W JP 0309685W WO 2004013886 A1 WO2004013886 A1 WO 2004013886A1
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WO
WIPO (PCT)
Prior art keywords
front substrate
electric field
getter
substrate
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/009685
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English (en)
Japanese (ja)
Inventor
Masakuni Osoegawa
Satoshi Koide
Yuuji Kuwabara
Kazuyuki Seino
Hirotaka Murata
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Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2004525801A priority Critical patent/JPWO2004013886A1/ja
Priority to EP03766665A priority patent/EP1544890A1/fr
Publication of WO2004013886A1 publication Critical patent/WO2004013886A1/fr
Priority to US11/050,226 priority patent/US20050130546A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/26—Sealing together parts of vessels
    • H01J9/261—Sealing together parts of vessels the vessel being for a flat panel display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/38—Exhausting, degassing, filling, or cleaning vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/38—Exhausting, degassing, filling, or cleaning vessels
    • H01J9/385—Exhausting vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/40—Closing vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2217/00—Gas-filled discharge tubes
    • H01J2217/38—Cold-cathode tubes
    • H01J2217/49—Display panels, e.g. not making use of alternating current

Definitions

  • the present invention relates to a method and an apparatus for manufacturing an image display device having a pair of substrates arranged opposite to each other.
  • FED 'short' display
  • a display device using a surface conduction electron-emitting device is also referred to as a surface conduction electron-emitting display (hereinafter, referred to as SED).
  • SED surface conduction electron-emitting display
  • the FED is a general term including SED. And the terms are used.
  • the FED generally has a front substrate and a rear substrate that are arranged to face each other with a predetermined gap therebetween, and these substrates are joined by joining their peripheral edges to each other via a rectangular frame-shaped side wall. It constitutes a vacuum envelope. The inside of the vacuum envelope, the vacuum is maintained in a high vacuum of about 1 0 one 4 P a. In order to support the atmospheric load applied to the rear substrate and the front substrate, a plurality of support members are arranged between these substrates.
  • a phosphor screen including red, blue, and green phosphor layers and a metal back are formed on the inner surface of the front substrate.
  • a number of electron-emitting devices are provided to emit electrons that excite light to emit light.
  • Many scanning lines and signal lines are formed in a matrix and connected to each electron-emitting device.
  • the area in which such an electron-emitting device is formed is referred to as an electron-emitting surface when viewed macroscopically.
  • An anode voltage is applied to the phosphor screen, and the electron beam emitted from the electron-emitting device is accelerated by the anode voltage and collides with the phosphor screen, so that the phosphor emits light and an image is displayed. Is displayed.
  • getter a metal with a gas adsorption characteristic called getter is vapor-deposited on the metal back (getter flash) to adsorb residual gas inside the envelope and gas released from each substrate. I have.
  • the gap between the front substrate and the rear substrate can be set to about 1 to 3 mm, and it is used as a display for current televisions and combi- ters.
  • a conventional cathode ray tube (CRT) it is possible to achieve a significant reduction in weight and thickness.
  • a phosphor for CRT having high luminous efficiency and good color purity is used in view of luminance, color reproducibility, phosphor degradation, and the like. It is necessary to form an aluminum thin film called metal back on the phosphor screen. It is desired that the anode voltage applied to the phosphor screen be at least several kV, preferably at least 10 kV.
  • the electron beam emits light by colliding with the phosphor, but at this time, a large amount of outgassing is generated, deteriorating the vacuum inside the FED, and the electron formed on the back substrate.
  • Emitting element Gives damage.
  • the electron emission characteristics of the electron-emitting device are degraded, resulting in a decrease in luminance, color reproducibility, and a shortened life. This is because, if the brightness of the display characteristics of the FED is to be increased, more electron beams from the electron-emitting devices are required, and this tendency is large. It is difficult to realize a display device.
  • the degassing effect was obtained by treating the front substrate and the rear substrate at high temperature before becoming a product.However, after the high temperature treatment, the time to move and hold the front substrate and rear substrate in the atmosphere As a result, gas re-adsorption occurred here, and sufficient effects were not obtained.
  • the method of absorbing the released gas inside the FED is to arrange a metal with high gas adsorption characteristics such as Ti and Ba on or near the phosphor screen of the front substrate to adsorb the released gas.
  • the vacuum inside the FED is maintained.
  • these materials have an allowable gas adsorption amount, and lose their effectiveness with respect to a gas amount exceeding a certain amount, making it difficult to maintain characteristics for a long time.
  • dust generated in the vapor deposition process when the getter film is formed, and missing getter film due to insufficient bonding strength between the metal back and the getter film have occurred.
  • the gap between the front substrate and the rear substrate cannot be made so large from the viewpoint of the characteristics of resolution and electron emission efficiency, and needs to be set to about 1 to 3 mm. Therefore, in the FED, a strong electric field is formed in a small gap between the front substrate and the rear substrate. Inevitably, discharge (dielectric breakdown) between the two substrates poses a problem. When the discharge occurs, a current of 100 A or more flows instantaneously, and the electron-emitting device and the phosphor screen are destroyed or deteriorated. Discharge may destroy the drive circuit for operating the FED. These are collectively referred to as damage due to discharge.
  • Damage due to discharge can be a catastrophic product failure, such as loss of information due to the occurrence of a non-display area, reduction in luminance and color reproducibility, and deterioration in display performance due to deterioration of electron-emitting devices. This will, of course, shorten the life of the image display device. Therefore, in order to make FED practical, it is necessary to prevent these damages from occurring over a long period of time. However, it is very difficult to completely suppress discharge.
  • Japanese Patent Application Laid-Open No. 2000-311642 discloses a technique in which a metal back provided on a phosphor screen is notched. A technology has been disclosed that forms a zigzag pattern or the like to increase the effective inductance of the phosphor screen.
  • Japanese Patent Application Laid-Open No. 10-326583 discloses a technique for dividing a metal back
  • Japanese Patent Application Laid-Open No. 2000-2151977 discloses a technique for dividing a metal back.
  • a technique of providing a coating of a conductive material on a divided portion has been disclosed.
  • discharge voltage the voltage at which discharge occurs
  • discharge may occur after long-term use of FED.
  • Suppressing the discharge means preventing the discharge from occurring at all when applying the anode voltage, or reducing the discharge probability to a practically acceptable level.
  • the applied potential difference between the anode and the cathode is called a withstand voltage.
  • this getter film is formed on a metal back as a vapor-deposited film by fixing a metal such as Ba, Ti having high gas adsorption characteristics to a metal serving as a getter base and heating the metal base. Formed. At this time, a part of the metal base and a part of the getter electrode may be melted in the vapor deposition process by heating the metal base and may fall on the front substrate and the rear substrate, and this becomes a discharge power. This is a major factor in expanding discharge.
  • a technique for improving the withstand voltage a technique called conditioning is well known. This technique is, for example, a discharge hand It is listed on page 302 of the book (Ohm, 1989). This is to improve the withstand voltage by applying a potential difference between the opposing surfaces.
  • spark conditioning that causes discharge (spark) is called conditioning, although discharge may or may not occur.
  • the mechanism by which the breakdown voltage is improved by spark conditioning is not known in detail, the discharge power of minute projections and foreign substances may be melted and removed by discharge, or may be removed. It is considered that the attached fine particles are removed by an electric field.
  • the present invention is intended to solve such a problem, and an object of the present invention is to provide an image display device capable of manufacturing an image display device having high pressure resistance and excellent display performance and reliability.
  • An object of the present invention is to provide an apparatus manufacturing method and an apparatus.
  • an image display device manufacturing method provides an image display device comprising: a front substrate on which a phosphor screen is formed; and a rear substrate on which a plurality of electron-emitting devices are provided.
  • At least one of the front substrate and the rear substrate is opposed to the processing electrode, and an electric field is applied between the at least one substrate and the processing electrode to reduce the number of the processing electrodes. Also, one of the substrates is subjected to an electric field treatment, and after the electric field treatment, the front substrate and the rear substrate are sealed to each other while being maintained in a vacuum atmosphere.
  • a method of manufacturing an image display device comprising: In a method for manufacturing an image display device comprising a front substrate on which a light surface is formed, and a rear substrate on which a plurality of electron-emitting devices are provided, a processing electrode having the front substrate and an opening in a vacuum atmosphere And an electric field is applied between the front substrate and the processing electrode to subject the front substrate to electric field treatment. After the electric field treatment, the front substrate and the rear substrate are maintained in a vacuum atmosphere. Seal with each other.
  • An apparatus for manufacturing an image display device is a manufacturing apparatus for an image display device, comprising: a front substrate on which a phosphor screen is formed; and a back substrate on which a plurality of electron-emitting devices are provided.
  • a vacuum chamber capable of accommodating at least one of the front substrate and the rear substrate as well as at least one of the substrates in the vacuum chamber.
  • a processing electrode disposed in the vacuum chamber, an electric field application unit for applying an electric field between the at least one substrate and the processing electrode, and the at least one substrate provided in the vacuum chamber.
  • a getter device for forming a getter film on the substrate.
  • An apparatus for manufacturing an image display device is a manufacturing apparatus for an image display device, comprising: a front substrate on which a phosphor screen is formed; and a back substrate on which a plurality of electron-emitting devices are provided.
  • a vacuum chamber capable of accommodating the front substrate while maintaining the front substrate, a processing electrode disposed in the vacuum chamber so as to face the front substrate and having an opening,
  • An electric field applying unit for applying an electric field between the processing electrode and the processing electrode.
  • an electric field is applied to the processing electrode and the substrate arranged opposite to the substrate in a vacuum atmosphere to perform an electric field treatment, thereby removing foreign matter, protrusions, and the like remaining on the substrate.
  • the cause of the discharge can be eliminated. This makes it possible to manufacture an image display device having excellent withstand voltage characteristics and improved display performance and reliability.
  • FIG. 1 is a perspective view showing an example of an FED manufactured by the manufacturing method and the manufacturing apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the above FED along line 1 1 1 1 1 of FIG.
  • FIG. 3 is a cross-sectional view schematically showing a manufacturing method and a manufacturing apparatus according to the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view schematically showing a manufacturing method and a manufacturing apparatus according to a second embodiment of the present invention.
  • FIG. 5 is a cross-sectional view schematically showing a manufacturing method and a manufacturing apparatus according to a third embodiment of the present invention.
  • FIG. 6 is a sectional view schematically showing a manufacturing method and a manufacturing apparatus according to a fourth embodiment of the present invention.
  • FIG. 7 is a sectional view schematically showing a manufacturing method and a manufacturing apparatus according to a fifth embodiment of the present invention.
  • FIG. 8 is a sectional view schematically showing a manufacturing method and a manufacturing apparatus according to a sixth embodiment of the present invention.
  • FIG. 9 is a sectional view schematically showing a manufacturing method and a manufacturing apparatus according to a seventh embodiment of the present invention.
  • FIG. 10 shows a manufacturing method according to an eighth embodiment of the present invention and Sectional drawing which shows a manufacturing apparatus schematically.
  • an FED provided with a surface conduction electron-emitting device will be described as an example of an image display device manufactured by the present manufacturing method and manufacturing apparatus.
  • this FED has a front substrate 11 and a rear substrate 12 each of which is a rectangular glass plate having a thickness of about 1 to 3 mm as an insulating substrate. These substrates are opposed to each other with a gap of 1 to 2 mm. Front board 1 1 and the rear substrate 1 2 are through the side walls 1 3 of the rectangular frame is joined peripheral edge portions, the inside is 1 0 - 4 p a of about been flat rectangular shape maintained at a high vacuum The vacuum envelope 10 of FIG.
  • a plurality of spacers 14 are provided inside the vacuum envelope 10 to support the atmospheric load applied to the front substrate 11 and the rear substrate 12.
  • a plate-shaped or columnar spacer or the like can be used as the spacer 14.
  • a red, green, and blue strip-like phosphor layer 16 and a matrix-like black light absorption layer 17 were provided as phosphor screens.
  • Phosphor screen 15 is formed.
  • the phosphor layer 16 may be formed in a dot shape.
  • a metal back 20 made of an aluminum film or the like is formed on the phosphor screen 15, and a getter film 22 is formed so as to overlap the metal back.
  • a number of surface conduction electron-emitting devices 1 each emitting an electron beam are provided as an electron source for exciting the phosphor layer 16 of the phosphor screen 15. 8 are provided.
  • Each electron-emitting device 18 is arranged in a plurality of columns and a plurality of rows corresponding to each pixel.
  • Each electron-emitting device 18 includes an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like.
  • an anode voltage is applied to the phosphor screen 15 and the metal back 20 and the electron beam emitted from the electron-emitting device 18 is converted to the anode voltage. It accelerates more and collides with the phosphor screen. As a result, the phosphor layer 16 of the phosphor screen 15 is excited and emits light, and a color image is displayed.
  • the manufacturing apparatus includes a vacuum chamber 30 constituted by a vacuum processing tank, and an exhaust pump 32 for evacuating the inside is connected to this vacuum chamber.
  • a first processing electrode 34, a second processing electrode 36, and a getter device 38 are provided in the vacuum chamber 30.
  • the first and second processing electrodes 34, 36 are each formed in a plate shape having dimensions substantially equal to the substrate to be processed.
  • Primary and secondary The processing electrodes 34 and 36 are provided substantially horizontally and side by side with a gap.
  • First and second processing electrode 3 4, 3 6 are connected to the ground potential, respectively.
  • a getter deposition position 40 is defined between the first and second processing electrodes 34 and 36, and a getter device 38 is disposed below the getter deposition position 40.
  • the getter device 38 includes a cover 42 opened toward the getter deposition position 40, a getter material 44 provided at the bottom of the cover, and a heating mechanism 45 for heating the getter material. I have.
  • the heating mechanism 45 a high-frequency heating method or a resistance heating method can be used.
  • the manufacturing apparatus includes a power source 46 for applying a voltage to the substrate to be processed, and a first electric field processing position facing the first processing electrode 34 and a getter vapor deposition position 4 in the vacuum chamber 30. 0, and a substrate transport mechanism (not shown) for transporting between the second electric field processing position facing the second processing electrode 36.
  • the inside of the vacuum chamber 30 is evacuated to a desired degree of vacuum by an exhaust pump 32, and the inside of the vacuum chamber is set to a vacuum atmosphere.
  • the front substrate 11 is loaded into the vacuum chamber 30 and installed at the first electric field processing position.
  • the front substrate 11 is arranged such that the entire surface on the metal back 20 side faces the first processing electrode 34 with a desired gap. Is placed.
  • a power supply 46 functioning as an electric field application unit is electrically connected to the metal back 20, and a voltage is applied from the power supply 46 to the metal back.
  • the voltage applied to the metal back 20 is set so that a positive or negative potential difference is generated between the metal back and the first processing electrode 34.
  • an electric field is generated between the front substrate 11 and the first processing electrode 34, and the front substrate 11 is subjected to the electric field processing.
  • foreign substances such as dust and dust remaining on the front substrate 11 are adsorbed to and removed from the first processing electrode 34, and are formed during the production process of the front substrate. Remove unnecessary protrusions.
  • the front substrate is moved to the gettering position while a potential difference is provided between the first processing electrode 34 and the front substrate 11 and the distance between the first processing electrode 34 and the first processing electrode 34 is maintained. Transport to 40. By maintaining the potential difference in this way, the foreign matter adsorbed on the first processing electrode 34 or the removed protrusion is held on the first processing electrode and adheres again to the front substrate 11 side.
  • the front substrate 11 faces the upper opening of the force bar 42 of the getter device 38 with the surface on the metal back 20 side facing down.
  • the getter material 44 provided on the bottom of the cover 42 is heated and evaporated by the heating mechanism 45 to perform getter flash.
  • a getter is deposited on the metal back 20 of the front substrate 11 to form a getter film 22.
  • getter flash is performed from the bottom to the top using the getter material 44 located below the front substrate 11. This prevents dust and the like generated due to the getter flash from adhering to the front substrate 11 side.
  • the front substrate 11 is transferred from the getter deposition position 40 to the second electric field processing position while maintaining the connection with the power supply 46.
  • the front substrate 11 is arranged so that the entire surface on the getter film 22 side is opposed to the second processing electrode 36 with a desired gap.
  • a voltage is applied from the power supply 46 to the metal back 20 and the getter film 22.
  • the applied voltage is set so that a positive or negative potential difference occurs between the front substrate 11 and the second processing electrode 36.
  • an electric field is generated between the front substrate 11 and the second processing electrode 36, and the front substrate 11 is subjected to the electric field processing again.
  • foreign matter such as dust generated in the getter vapor deposition process and dust and dust adhered to the front substrate such as floating substances in the vacuum chamber 30 is adsorbed to the second processing electrode 36 and removed.
  • unnecessary protrusions and the like formed on the front substrate in the getter deposition step are removed.
  • the front substrate is moved away from the second processing electrode while keeping the potential difference between the front substrate 11 and the second processing electrode 36 and maintaining the distance from the processing electrode 34.
  • the back substrate 12 on which the wiring 21 and the electron-emitting devices 18 are formed is subjected to an electric field treatment by the same process as described above except for getter vapor deposition.
  • the electric field treatment of the rear substrate 12 may be performed at least once.
  • foreign matter such as dust attached to the front substrate 11 and the rear substrate 12 before being put into the vacuum chamber, and the production of the front substrate and the rear substrate. Unnecessary protrusions formed in the process can be removed.
  • foreign substances such as dust generated in the getter vapor deposition step and dust and dust attached to the substrate such as floating substances in the vacuum chamber can be removed after putting these substrates into the vacuum chamber. As a result, it is possible to obtain a FED with improved withstand voltage characteristics by eliminating a factor that triggers the occurrence of discharge.
  • the anode potential can be set high, and a high brightness and high display performance FED can be obtained.
  • the processing electrode is connected to the getter device 38
  • the present invention can be implemented even with a single processing electrode.
  • the front substrate 11 is transported to the getter vapor deposition position 40 to perform getter vapor deposition.
  • the front substrate 11 is returned to a position facing the processing electrode 34 again, and electric field processing is performed.
  • only one processing electrode 34 is formed, and only after the getter film is formed, the front substrate 11 is moved to the electric field processing position facing the processing electrode 34. It may be configured to carry and carry out electric field treatment on the front substrate. Even in this case, by subjecting the getter film 22 that is finally exposed to the inside of the vacuum envelope and facing the rear substrate 12 to an electric field treatment, foreign matter such as dust adhering to the getter film can be obtained. In addition, unnecessary protrusions and the like formed in the manufacturing process can be removed. As a result, it is possible to sufficiently improve the breakdown voltage characteristics of the FED.
  • a configuration may be adopted in which only one processing electrode is used and the electric field processing is performed only before the getter film is deposited. In this case, the withstand voltage characteristics can be improved.
  • the getter flash is applied from the bottom to the upper side by using the getter material disposed below the substrate, thereby accommodating the getter flash.
  • the structure of the fourth embodiment shown in Fig. 6 has been adopted to reduce the adhesion of dust
  • the getter device 38 including the getter material 44 may be arranged above the substrate to be processed, and the getter flash may be performed from top to bottom.
  • the direction of getter flash is not limited to the vertical direction, but can be performed from other directions.
  • the substrate side is set to the ground potential, and the voltage is applied from the power supply 46 to the processing electrodes 34 and 36 itself. Is also good. According to this configuration, a high voltage can be applied, and the effect of the electric field treatment can be enhanced. For example, by applying a negative potential to the processing electrodes 34 and 36, a positive potential is applied to the front substrate 11 or the rear substrate 12 and the same effect as in the above-described embodiment is obtained. In addition to the advantages, there is an advantage that a high voltage can be applied. It goes without saying that the same effect can be obtained even if a positive potential is applied to the processing electrode.
  • the manufacturing apparatus includes a vacuum chamber 30 constituted by a vacuum processing tank, and an exhaust pump 32 for evacuating the inside is connected to the vacuum chamber.
  • a getter device 38 for forming a getter film is arranged in the vacuum chamber 30.
  • the getter device 3 8 has an opening 3 7 at the lower end. It has a substantially box-shaped cover 42 with a cover.
  • a getter member 44 is provided on the ceiling wall inside the cover 42, and faces the opening 37.
  • the getter device 38 is provided with a power heating mechanism 45 for heating the getter material 44.
  • the heating mechanism 45 a heating mechanism of a high-frequency heating method or a resistance heating method can be used.
  • the opening 37 of the cover 42 is formed to have dimensions substantially equal to the substrate to be processed.
  • a processing electrode 34 is provided so as to cover the opening 37 and is attached to the cover 42.
  • a large number of through holes for the getter to pass through are formed in the processing electrode 34 to form an opening.
  • the manufacturing apparatus includes a power source 46 for applying a voltage to a substrate to be processed, and a processing position facing the processing electrode 34 in the vacuum chamber 30, that is, an electric field processing position.
  • a substrate transport mechanism (not shown) that transports the wafer to the vapor deposition position is provided.
  • the distance between the getter material 44 and the processing electrode is set to be wider than the distance between the processing electrode and the processing substrate. Is set to.
  • the inside of the chamber 30 is evacuated to a desired degree of vacuum, and the inside of the vacuum chamber is evacuated. Subsequently, the front substrate 11 is loaded into the vacuum chamber 30 and placed at the illustrated processing position. In the processing position, the front substrate 11 is disposed so that the entire surface on the metal back 20 side faces the processing electrode 34 with a desired gap.
  • a power supply 46 functioning as an electric field application unit is electrically connected to the metal back 20, and a voltage is applied from the power supply 46 to the metal back.
  • the processing electrode 34 is connected to the ground potential.
  • the voltage applied to the metal clock 20 is set so that a positive or negative potential difference occurs between the metal back and the processing electrode 34.
  • an electric field is generated between the front substrate 11 and the processing electrode 34, and the front substrate 11 is subjected to electric field processing.
  • foreign substances such as dust remaining on the front substrate 11 are adsorbed to and removed from the processing electrode 34, and unnecessary waste formed in the production process of the front substrate is removed. Remove any protrusions.
  • the front substrate 11 is moved to a position not facing the processing electrode 34 while keeping a potential difference between the processing electrode 34 and the front substrate 11.
  • the foreign matter adsorbed on the processing electrode 34 or the removed protrusion is held on the processing electrode, and the foreign matter or the removed protrusion on the front substrate 11 is prevented from dropping and reattaching.
  • foreign matter or projections adsorbed or removed by the treatment electrode 34 are not located on the front substrate 11 but in the vacuum chamber 3. As a result, the foreign matter or the removed protrusion when the substrate is transported again can be prevented from falling onto the substrate.
  • the front substrate 11 is disposed such that the entire surface of the metal back 20 is opposed to the processing electrode 34 with a desired gap, and the getter provided on the ceiling wall of the cover 14 2
  • the material 44 is heated and evaporated by the heating mechanism 45 to perform getter flash.
  • a part of the getter is vapor-deposited on a region of the processing electrode 34 where no through-hole is formed to form a getter film 50.
  • the remaining portion of the getter passes through the through-hole of the processing electrode 34 and is deposited on the metal back 20 of the front substrate 11 to form a getter film 22.
  • the distance between the front substrate 11 and the processing electrode 34 is smaller than the distance between the processing electrode and the getter member 44 ⁇ set, and the distance between the front substrate 11 and the processing electrode 34 is set.
  • the conductance between the processing electrode and the getter material 44 is also small. Therefore, the gas released from the getter material 44 at the time of the getter flash passes through the processing electrode 34 first, and is adsorbed by the getter film 50 formed on this processing electrode. It does not reach the front substrate 11. Therefore, the getter film 22 formed on the front substrate 11 is not deteriorated by this gas.
  • a voltage is applied from the power supply 46 to the metal back 20 and the getter film 22.
  • the applied voltage is set such that a positive or negative potential difference is generated between the front substrate 11 and the processing electrode 34.
  • an electric field is generated between the front substrate 11 and the processing electrode 34, and the front substrate 11 is again subjected to the electric field treatment.
  • foreign matter such as dust generated in the getter vapor deposition process and floating substances in the vacuum chamber 30 adhered to the front substrate 11 such as dust and dust adhere to the processing electrode 34. Removal
  • unnecessary protrusions and the like formed on the front substrate in the getter vapor deposition step are removed.
  • the front substrate 11 is moved to a position where it does not face the electrode 34 while a potential difference is applied between the front substrate 11 and the processing electrode 34. As described above, the electric field processing of the front substrate 11 and the formation of the getter film are completed.
  • the back substrate 12 on which the wiring 21 and the electron-emitting devices 18 are formed is subjected to an electric field treatment by the same process as described above except for getter vapor deposition.
  • the electric field treatment of the rear substrate 12 may be performed at least once.
  • the electric field-treated front substrate 11 and rear substrate 12 are transported to a sealing position (not shown) while being maintained in a vacuum atmosphere without being exposed to the air, where they are sealed together to form a vacuum envelope.
  • Form 10. This completes the FED vacuum envelope.
  • the sealing of the substrate may be performed in the same vacuum chamber as the above-described vacuum chamber 30 for performing the electric field treatment, or in another vacuum chamber communicating with the vacuum chamber 30 in a vacuum state. You may go in.
  • foreign matter such as dust attached to the front substrate 11 and the rear substrate 12 before being put into the vacuum chamber, and the production of the front substrate and the rear substrate.
  • Unwanted protrusions formed during the process can be removed by electric field treatment.
  • foreign matter such as dust generated in the getter vapor deposition process and floating substances in the vacuum chambers adhered to the substrates and foreign substances such as dust are subjected to electric field treatment. It can be removed. As a result, it does not trigger a discharge.
  • the FED with improved withstand voltage characteristics can be obtained.
  • the vacuum envelope is formed without exposing these substrates to the atmosphere. Accordingly, there is no possibility that dust and the like in the air adhere to the substrate again, and the initial discharge and the discharge for a long period can be suppressed.
  • the anode potential can be set high, and a high-brightness and high-display-performance FED can be obtained. Further, it is possible to prevent deterioration of the gas adsorption characteristics of the getter film formed on the front substrate 11, and to maintain a high degree of vacuum for a long period of time to obtain a product having a long life.
  • the processing electrode with the opening, the electric field processing and the getter film deposition can be performed while the processing substrate is held at the same position. This makes it possible to simplify the processing steps and the manufacturing apparatus.
  • a getter film is also formed in a region where the opening of the processing electrode is not provided, and the gas generated during getter flash can be adsorbed by the getter film.
  • the getter film formed on the substrate can maintain high gas adsorption characteristics without deterioration.
  • the electric field processing is performed twice before and after the deposition of the getter film.
  • the electric field processing of the front substrate 11 is performed only after the getter film is formed. You may. this Even in this case, by subjecting the getter film 22 that is finally exposed to the inside of the vacuum envelope and faces the rear substrate 12 to an electric field treatment, foreign matter such as dust adhering to the getter film can be prevented. Unnecessary protrusions and the like formed during the manufacturing process can be removed. As a result, the breakdown voltage characteristics of the FED can be sufficiently improved, and the same operation and effect as those of the above-described embodiment can be obtained.
  • the electric field treatment may be performed only before the getter film is deposited. Even in this case, the withstand voltage characteristics can be improved.
  • the getter flash is performed from top to bottom using the getter material 44 disposed above the processing substrate.
  • the getter material 44 may be arranged below the processing substrate, and the getter flash may be performed upward from below. In this case, it is possible to more reliably reduce the adhesion of dust generated due to getter flash to the substrate.
  • the direction of getter flash is not limited to the vertical direction, but can be performed from other directions.
  • the processing electrode 34 is supported in a floating state with respect to the cover 42 by an insulating member such as an insulating insulator 60. .
  • a power supply 46 is electrically connected to the processing electrode 34, and a metal back of the front substrate 11 is connected to a ground potential.
  • a high voltage can be applied to the processing electrode 34 itself, and the effect of electric field processing can be enhanced.
  • a negative potential to the processing electrode 34
  • a positive potential is applied to the front substrate 11 or the rear substrate 12. Since this is applied, the same effect as in the above-described embodiment can be obtained.
  • there is an advantage that a high voltage can be applied. It goes without saying that the same effect can be obtained by applying a positive potential to the processing electrode 34.
  • the processing electrode is configured to have substantially the same dimensions as the substrate to be processed, but a processing electrode smaller in size than the substrate is used, and the processing electrode and the substrate are used.
  • a configuration may be adopted in which the entire surface of the substrate is subjected to an electric field treatment by relatively moving.
  • both the front substrate and the rear substrate are subjected to the electric field treatment in a vacuum atmosphere.
  • the electric field treatment of at least one of the substrates also improves the withstand voltage characteristics.
  • an improved image display device can be obtained.
  • the present invention is not limited to FED, but is applicable to other image display devices.
  • the present invention it is possible to provide a manufacturing method and a manufacturing apparatus capable of manufacturing a high-performance image display device having a long life, excellent withstand voltage characteristics, and improved reliability. .

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

Dans une atmosphère de vide, au moins un substrat parmi des substrats de face frontale (11) et de face arrière, ainsi que des électrodes de traitement (34, 36) sont mutuellement opposés, et un champ électrique est appliqué entre au moins un des substrats et les supports de traitement (34, 36), de façon à traiter les substrats dans le champ électrique. Après le traitement, les substrats de face frontale (11) et de face arrière sont joints hermétiquement l'un à l'autre, les substrats étant maintenus en atmosphère de vide de manière à créer une atmosphère externe. Des substances et des projections étrangères, entre autres, restant sur les substrats sont enlevées par le traitement dans le champ électrique, éliminant ainsi des facteurs de production de charges électriques.
PCT/JP2003/009685 2002-08-05 2003-07-30 Procede et dispositif pour realiser un dispositif d'affichage d'images Ceased WO2004013886A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004525801A JPWO2004013886A1 (ja) 2002-08-05 2003-07-30 画像表示装置の製造方法および製造装置
EP03766665A EP1544890A1 (fr) 2002-08-05 2003-07-30 Procede et dispositif pour realiser un dispositif d'affichage d'images
US11/050,226 US20050130546A1 (en) 2002-08-05 2005-02-04 Manufacturing method and manufacturing apparatus for image display device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002-227500 2002-08-05
JP2002-227682 2002-08-05
JP2002227500 2002-08-05
JP2002227682 2002-08-05

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WO2004013886A1 true WO2004013886A1 (fr) 2004-02-12

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JP (1) JPWO2004013886A1 (fr)
KR (1) KR100730678B1 (fr)
CN (1) CN1675735A (fr)
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WO (1) WO2004013886A1 (fr)

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CN103043921B (zh) * 2011-10-13 2016-01-27 洛阳兰迪玻璃机器股份有限公司 带有吸气剂膜的真空玻璃

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000044022A1 (fr) * 1999-01-19 2000-07-27 Canon Kabushiki Kaisha Canon d'électrons et imageur et procédé de fabrication, procédé et dispositif de fabrication de source d'électrons, et appareil de fabrication d'imageur
JP2000251736A (ja) * 1999-02-25 2000-09-14 Canon Inc 電子源の製造方法および電子源および画像形成装置および帯電処理装置
JP2001338578A (ja) * 2000-03-23 2001-12-07 Canon Inc 画像表示装置の製造法及び製造装置
JP2002124188A (ja) * 2000-10-12 2002-04-26 Sony Corp 画像表示装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000044022A1 (fr) * 1999-01-19 2000-07-27 Canon Kabushiki Kaisha Canon d'électrons et imageur et procédé de fabrication, procédé et dispositif de fabrication de source d'électrons, et appareil de fabrication d'imageur
JP2000251736A (ja) * 1999-02-25 2000-09-14 Canon Inc 電子源の製造方法および電子源および画像形成装置および帯電処理装置
JP2001338578A (ja) * 2000-03-23 2001-12-07 Canon Inc 画像表示装置の製造法及び製造装置
JP2002124188A (ja) * 2000-10-12 2002-04-26 Sony Corp 画像表示装置の製造方法

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KR20050026570A (ko) 2005-03-15
TW200405387A (en) 2004-04-01
EP1544890A1 (fr) 2005-06-22
KR100730678B1 (ko) 2007-06-21
JPWO2004013886A1 (ja) 2006-09-21
CN1675735A (zh) 2005-09-28

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