WO2004101434A1 - Methode metallurgique de reception de poudre de silicium de haute purete par traitement chimique - Google Patents

Methode metallurgique de reception de poudre de silicium de haute purete par traitement chimique Download PDF

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Publication number
WO2004101434A1
WO2004101434A1 PCT/KZ2003/000002 KZ0300002W WO2004101434A1 WO 2004101434 A1 WO2004101434 A1 WO 2004101434A1 KZ 0300002 W KZ0300002 W KZ 0300002W WO 2004101434 A1 WO2004101434 A1 WO 2004101434A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
reducing agent
inorganic acid
receiving
silicon powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KZ2003/000002
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English (en)
Inventor
Helmut Engel
Boris Mikhailovich Morozov
Boris Anatolyevich Beketov
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Individual
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of WO2004101434A1 publication Critical patent/WO2004101434A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/04—Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon

Definitions

  • An invention relates to the metallurgical method of receiving the high purity silicon powder by chemical processing, which can be used for production of solar cell.
  • quartzite is processed by inorganic acid and the reduction process includes silicon fining with the mixture of SiOs x CaFz in the ratio of 2:1 and 5- 50% of the reducing agent's charge in number.
  • Aluminum is used as reducing agent and furnace is the base material of Si02 x CaO in the mass ratio of 1:3-6.
  • alkali and alkaline-earth materials are additionally put into furnace materials at the amount of 5-60% of the reducing agent's charge.
  • the proportion of furnace materials in Table 1 was used for receiving the silicon of high activity extent.
  • silane cob contained an admixture of ⁇ 10" 4 mass shares, the phosphine and dibonrane were not detected in mass-spectrums.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

L'invention concerne une méthode métallurgique de réception de poudre de silicium de haute pureté par raffinement chimique et permettant l'utilisation de cette poudre pour une production de pile solaire, et d'hydrure de silicium, le cas échéant. Afin d'atteindre cet objectif, l'expérience de réduction aluminothermique de quartzite et de traitement du silicium obtenu par solution d'eau acide inorganique, diffère par le fait que, le matériau quartzite initial est traité au moyen d'acide inorganique et que le procédé de réduction consiste à raffiner de silicium au moyen d'un mélange de SiOz x CaFz dans un rapport de 2:1 et de 5-50 % de la charge d'agent de réduction. L'aluminium est utilisé en tant qu'agent de réduction et des matériaux de générateur de chaleur constituent le matériau de base de SiOz x CaO dans un rapport pondéral de 1:3-6. Ce qui permet d'augmenter la plage de pureté du produit cible.
PCT/KZ2003/000002 2003-05-15 2003-06-16 Methode metallurgique de reception de poudre de silicium de haute purete par traitement chimique Ceased WO2004101434A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KZ20030642 2003-05-15
KZ2003/0642.1 2003-05-15

Publications (1)

Publication Number Publication Date
WO2004101434A1 true WO2004101434A1 (fr) 2004-11-25

Family

ID=33448385

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KZ2003/000002 Ceased WO2004101434A1 (fr) 2003-05-15 2003-06-16 Methode metallurgique de reception de poudre de silicium de haute purete par traitement chimique

Country Status (2)

Country Link
RU (1) RU2003125002A (fr)
WO (1) WO2004101434A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007050010A1 (de) * 2007-10-17 2009-06-25 Jan-Philipp Mai Verfahren und Vorrichtung zur Herstellung von Silizium
WO2010027782A3 (fr) * 2008-08-25 2010-09-02 Orion Laboratories, Llc Procédés magnésiothermiques de production d'une solution de pureté élevée
WO2012000428A1 (fr) * 2010-06-29 2012-01-05 Byd Company Limited Procédé de préparation d'un silicium de pureté élevée
CN102476800A (zh) * 2010-11-24 2012-05-30 比亚迪股份有限公司 一种工业硅的冶炼方法
US11780734B2 (en) 2016-12-19 2023-10-10 Norwegian University Of Science And Technology (Ntnu) Process for the production of commercial grade silicon
WO2025103570A1 (fr) 2023-11-14 2025-05-22 Energy Carrier Solutions Sàrl Procédés et systèmes de production d'hydrogène

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024614A1 (fr) * 1979-08-16 1981-03-11 Consortium für elektrochemische Industrie GmbH Procédé de purification de silicium brut
EP0089010A1 (fr) * 1982-03-11 1983-09-21 HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH Procédé semi-continu de fabrication de silicium pur
JPS6077942A (ja) * 1983-10-03 1985-05-02 Nippon Denko Kk テルミツト法による金属クロムの製造方法
RU1808812C (ru) * 1991-06-17 1993-04-15 Казахский Химико-Технологический Институт Способ получени кремни

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024614A1 (fr) * 1979-08-16 1981-03-11 Consortium für elektrochemische Industrie GmbH Procédé de purification de silicium brut
EP0089010A1 (fr) * 1982-03-11 1983-09-21 HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH Procédé semi-continu de fabrication de silicium pur
JPS6077942A (ja) * 1983-10-03 1985-05-02 Nippon Denko Kk テルミツト法による金属クロムの製造方法
RU1808812C (ru) * 1991-06-17 1993-04-15 Казахский Химико-Технологический Институт Способ получени кремни

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; OSPANOV, ZHUMAGALI O. ET AL: "Method for silicon production", XP002265236, retrieved from STN Database accession no. 122:137493 CA *
DATABASE INSPEC [online] INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; SHARMA I G ET AL: "Aluminothermic preparation of Hf-Ta and Nb-10Hf-1Ti alloys and their characterization", XP002264730, Database accession no. 7634810 *
DATABASE WPI Section Ch Week 198524, Derwent World Patents Index; Class M25, AN 1985-143788, XP002264732 *
DATABASE WPI Section Ch Week 199712, Derwent World Patents Index; Class E36, AN 1997-130645, XP002264731 *
JOURNAL OF ALLOYS AND COMPOUNDS, 17 FEB. 2003, ELSEVIER, SWITZERLAND, vol. 350, pages 184 - 190, ISSN: 0925-8388 *
KELLER R: "PROCESS MAKES HIGH GRADE SILICON", APPLIED OPTICS, OPTICAL SOCIETY OF AMERICA,WASHINGTON, US, VOL. 27, NR. 20, PAGE(S) 4346, ISSN: 0003-6935, XP000099063 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007050010A1 (de) * 2007-10-17 2009-06-25 Jan-Philipp Mai Verfahren und Vorrichtung zur Herstellung von Silizium
WO2010027782A3 (fr) * 2008-08-25 2010-09-02 Orion Laboratories, Llc Procédés magnésiothermiques de production d'une solution de pureté élevée
US7972584B2 (en) 2008-08-25 2011-07-05 Orion Laboratories, Llc Magnesiothermic methods of producing high-purity silicon
WO2012000428A1 (fr) * 2010-06-29 2012-01-05 Byd Company Limited Procédé de préparation d'un silicium de pureté élevée
CN102476800A (zh) * 2010-11-24 2012-05-30 比亚迪股份有限公司 一种工业硅的冶炼方法
US11780734B2 (en) 2016-12-19 2023-10-10 Norwegian University Of Science And Technology (Ntnu) Process for the production of commercial grade silicon
WO2025103570A1 (fr) 2023-11-14 2025-05-22 Energy Carrier Solutions Sàrl Procédés et systèmes de production d'hydrogène

Also Published As

Publication number Publication date
RU2003125002A (ru) 2005-03-10

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