WO2004107048A3 - Mikrolithographische projektionsbelichtungsanlage - Google Patents

Mikrolithographische projektionsbelichtungsanlage Download PDF

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Publication number
WO2004107048A3
WO2004107048A3 PCT/EP2004/005816 EP2004005816W WO2004107048A3 WO 2004107048 A3 WO2004107048 A3 WO 2004107048A3 EP 2004005816 W EP2004005816 W EP 2004005816W WO 2004107048 A3 WO2004107048 A3 WO 2004107048A3
Authority
WO
WIPO (PCT)
Prior art keywords
projection
projection objective
exposure system
lens
projection exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2004/005816
Other languages
English (en)
French (fr)
Other versions
WO2004107048A2 (de
Inventor
Aurelian Dodoc
Karl Heinz Schuster
Joerg Mallmann
Wilhelm Ulrich
Hans-Juergen Rostalksi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to JP2006529950A priority Critical patent/JP4602336B2/ja
Priority to KR1020057022510A priority patent/KR101050287B1/ko
Priority to US10/917,371 priority patent/US7532306B2/en
Publication of WO2004107048A2 publication Critical patent/WO2004107048A2/de
Publication of WO2004107048A3 publication Critical patent/WO2004107048A3/de
Priority to US11/285,283 priority patent/US7570343B2/en
Anticipated expiration legal-status Critical
Priority to US12/199,998 priority patent/US20080316452A1/en
Priority to US12/611,999 priority patent/US20100045952A1/en
Priority to US14/852,824 priority patent/US20160131980A1/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)

Abstract

Eine mikrolithographische Projektionsbelichtungsanlage enthält eine Beleuchtungseinrichtung (12) zur Erzeugung von Projektionslicht (13) und ein Projektionsobjektiv (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120), mit dem ein in einer Objektebene (22) des Projektionsobjektivs anordenbares Retikel (24) auf eine in einer Bildebene (28) des Projektionsobjektivs anordenbare lichtempfindliche Schicht (26) abbildbar ist. Das Projektionsobjektiv ist für einen Immersionsbetrieb ausgelegt, bei dem eine bildseitig letzte Linse (L5; L205; L605; L705; L805; L905; L1005; L1105) des Projektionsobjektivs in eine Immersionsflüssigkeit (34; 334a; 434a; 534a) eintaucht. Ein für das Projektionslicht (13) durchlässiges Abschlusselement (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) ist zwischen der bildseitig letzten Linse und der lichtempfindlichen Schicht derart befestigt.
PCT/EP2004/005816 2003-05-30 2004-05-28 Mikrolithographische projektionsbelichtungsanlage Ceased WO2004107048A2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006529950A JP4602336B2 (ja) 2003-05-30 2004-05-28 マイクロリソグラフィ用投影露光システム
KR1020057022510A KR101050287B1 (ko) 2003-05-30 2004-05-28 마이크로리소그래픽 투사 노출 장치
US10/917,371 US7532306B2 (en) 2003-05-30 2004-08-13 Microlithographic projection exposure apparatus
US11/285,283 US7570343B2 (en) 2003-05-30 2005-11-23 Microlithographic projection exposure apparatus
US12/199,998 US20080316452A1 (en) 2003-05-30 2008-08-28 Microlithographic projection exposure apparatus
US12/611,999 US20100045952A1 (en) 2003-05-30 2009-11-04 Microlithographic projection exposure apparatus
US14/852,824 US20160131980A1 (en) 2003-05-30 2015-09-14 Microlithographic projection exposure apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10324477.8 2003-05-30
DE10324477A DE10324477A1 (de) 2003-05-30 2003-05-30 Mikrolithographische Projektionsbelichtungsanlage

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/917,371 Continuation US7532306B2 (en) 2003-05-30 2004-08-13 Microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
WO2004107048A2 WO2004107048A2 (de) 2004-12-09
WO2004107048A3 true WO2004107048A3 (de) 2005-04-28

Family

ID=33482288

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/005816 Ceased WO2004107048A2 (de) 2003-05-30 2004-05-28 Mikrolithographische projektionsbelichtungsanlage

Country Status (5)

Country Link
US (5) US7532306B2 (de)
JP (1) JP4602336B2 (de)
KR (1) KR101050287B1 (de)
DE (1) DE10324477A1 (de)
WO (1) WO2004107048A2 (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100742766B1 (ko) 2004-12-28 2007-07-25 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US8102507B2 (en) 2004-12-30 2012-01-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9081295B2 (en) 2003-05-06 2015-07-14 Nikon Corporation Catadioptric projection optical system, exposure apparatus, and exposure method
US9140996B2 (en) 2005-11-16 2015-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9268236B2 (en) 2005-06-21 2016-02-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method having heat pipe with fluid to cool substrate and/or substrate holder
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method

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CN100462844C (zh) 2002-08-23 2009-02-18 株式会社尼康 投影光学系统、微影方法、曝光装置及使用此装置的方法
SG2010050110A (en) * 2002-11-12 2014-06-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4179283B2 (ja) 2002-12-10 2008-11-12 株式会社ニコン 光学素子及びその光学素子を用いた投影露光装置
EP1610361B1 (de) 2003-03-25 2014-05-21 Nikon Corporation Belichtungssystem und bauelementeherstellungsverfahren
KR20170018113A (ko) 2003-04-09 2017-02-15 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
EP3062152B1 (de) 2003-04-10 2017-12-20 Nikon Corporation Umgebungssystem mit einer transportregion für eine immersionslithografievorrichtung
KR20180089562A (ko) 2003-04-10 2018-08-08 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR20180122033A (ko) * 2003-05-28 2018-11-09 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
DE10324477A1 (de) * 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
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US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
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TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
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US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US7532309B2 (en) * 2006-06-06 2009-05-12 Nikon Corporation Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid
US7656502B2 (en) * 2006-06-22 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7724347B2 (en) * 2006-09-05 2010-05-25 Tunable Optix Corporation Tunable liquid crystal lens module
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WO2009043790A2 (en) * 2007-10-02 2009-04-09 Carl Zeiss Smt Ag Projection objective for microlithography
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
KR101562073B1 (ko) 2007-10-16 2015-10-21 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
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NL1036596A1 (nl) * 2008-02-21 2009-08-24 Asml Holding Nv Re-flow and buffer system for immersion lithography.
JP2009289896A (ja) * 2008-05-28 2009-12-10 Toshiba Corp 液浸露光方法
CN101910817B (zh) 2008-05-28 2016-03-09 株式会社尼康 照明光学系统、曝光装置以及器件制造方法
US8294904B2 (en) * 2008-05-29 2012-10-23 Corning Incorporated Fizeau lens having aspheric compensation
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NL2005207A (en) * 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
US8896810B2 (en) * 2009-12-29 2014-11-25 Globalfoundries Singapore Pte. Ltd. Liquid immersion scanning exposure system using an immersion liquid confined within a lens hood
EP2381310B1 (de) 2010-04-22 2015-05-06 ASML Netherlands BV Flüssigkeitshandhabungsstruktur und lithographischer Apparat
US9127915B1 (en) * 2011-11-08 2015-09-08 Novana, Inc. Self-healing composites
US20140211175A1 (en) * 2013-01-31 2014-07-31 Globalfoundries Inc. Enhancing resolution in lithographic processes using high refractive index fluids
CN111679417B (zh) * 2013-12-06 2022-08-19 3M创新有限公司 具有保护元件的半潜式显微镜物镜和物镜在多光子成像方法中的用途
US10049444B2 (en) 2016-03-25 2018-08-14 Lockheed Martin Corporation Optical device for fuel filter debris
DE102018221670A1 (de) 2018-12-13 2020-06-18 Karlsruher Institut für Technologie Vorrichtung und Verfahren zur optischen Charakterisierung oder Bearbeitung eines Objekts
CN109407474A (zh) * 2018-12-26 2019-03-01 长春长光智欧科技有限公司 一种带保护玻璃的浸没头
DE102019112224A1 (de) * 2019-05-10 2020-11-12 Carl Zeiss Smt Gmbh Abstützung eines optischen Elements

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD224448A1 (de) * 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPH10303114A (ja) * 1997-04-23 1998-11-13 Nikon Corp 液浸型露光装置
US20030021015A1 (en) * 2000-04-07 2003-01-30 Maier Robert L. Film coated optical lithography elements and method of making
WO2003009062A1 (de) * 2001-07-18 2003-01-30 Carl Zeiss Smt Ag Kompensation der doppelbrechung in einem objektiv mit kristall-linsen
US6563565B2 (en) * 1997-08-27 2003-05-13 Nikon Corporation Apparatus and method for projection exposure
EP1420302A1 (de) * 2002-11-18 2004-05-19 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1431826A2 (de) * 2002-12-09 2004-06-23 Carl Zeiss SMT AG Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0023231B1 (de) 1979-07-27 1982-08-11 Tabarelli, Werner, Dr. Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe
US4269125A (en) 1979-07-27 1981-05-26 Combustion Engineering, Inc. Pulverizer rejects disposal
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5724185A (en) 1995-08-17 1998-03-03 Hughes Danbury Optical Systems, Inc. Method for optically contacting surfaces stressed by an optical coating
JP3612920B2 (ja) * 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
US6235438B1 (en) 1997-10-07 2001-05-22 Nikon Corporation Projection exposure method and apparatus
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
DE19929403A1 (de) 1999-06-26 2000-12-28 Zeiss Carl Fa Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungverfahren
JP4504479B2 (ja) * 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001272604A (ja) * 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
DE10119861A1 (de) 2000-05-04 2001-11-08 Zeiss Carl Projektionsobjektiv, insbesondere für die Mikrolithographie
JP2002083766A (ja) * 2000-06-19 2002-03-22 Nikon Corp 投影光学系、該光学系の製造方法、及び前記光学系を備えた投影露光装置
AUPQ922000A0 (en) * 2000-08-04 2000-08-31 Bae Systems Australia Limited Method of constructing an optical parametric oscillator
DE10121346A1 (de) 2001-05-02 2002-11-07 Zeiss Carl Objektiv, insbesondere Projektionsobjektiv für die Halbleiter-Lithographie
KR20040015251A (ko) 2001-05-15 2004-02-18 칼 짜이스 에스엠티 아게 불화물 결정 렌즈들을 포함하는 렌즈 시스템
DE10123725A1 (de) 2001-05-15 2002-11-21 Zeiss Carl Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
US6479999B1 (en) 2001-06-05 2002-11-12 Koninklijke Philips Electronics N.V. Efficiently shielded MRI gradient coil with discretely or continuously variable field of view
US6775063B2 (en) 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
CN100462844C (zh) 2002-08-23 2009-02-18 株式会社尼康 投影光学系统、微影方法、曝光装置及使用此装置的方法
SG2010050110A (en) * 2002-11-12 2014-06-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4179283B2 (ja) 2002-12-10 2008-11-12 株式会社ニコン 光学素子及びその光学素子を用いた投影露光装置
DE10258715B4 (de) * 2002-12-10 2006-12-21 Carl Zeiss Smt Ag Verfahren zur Herstellung eines optischen Abbildungssystems
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
DE10324477A1 (de) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
WO2005106589A1 (en) * 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
JP5420821B2 (ja) 2004-01-14 2014-02-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 反射屈折投影対物レンズ
US20070165198A1 (en) * 2004-02-13 2007-07-19 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
TWI395069B (zh) 2004-02-18 2013-05-01 尼康股份有限公司 投影光學系統、曝光裝置以及曝光方法
US7796274B2 (en) 2004-06-04 2010-09-14 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
US20060237227A1 (en) * 2005-04-26 2006-10-26 Shiyou Zhao Circuit board via structure for high speed signaling
DE102005024163A1 (de) * 2005-05-23 2006-11-30 Carl Zeiss Smt Ag Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
US20070070323A1 (en) * 2005-09-21 2007-03-29 Nikon Corporation Exposure apparatus, exposure method, and device fabricating method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD224448A1 (de) * 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPH10303114A (ja) * 1997-04-23 1998-11-13 Nikon Corp 液浸型露光装置
US6563565B2 (en) * 1997-08-27 2003-05-13 Nikon Corporation Apparatus and method for projection exposure
US20030021015A1 (en) * 2000-04-07 2003-01-30 Maier Robert L. Film coated optical lithography elements and method of making
WO2003009062A1 (de) * 2001-07-18 2003-01-30 Carl Zeiss Smt Ag Kompensation der doppelbrechung in einem objektiv mit kristall-linsen
EP1420302A1 (de) * 2002-11-18 2004-05-19 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1431826A2 (de) * 2002-12-09 2004-06-23 Carl Zeiss SMT AG Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 02 26 February 1999 (1999-02-26) *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9081295B2 (en) 2003-05-06 2015-07-14 Nikon Corporation Catadioptric projection optical system, exposure apparatus, and exposure method
US9086635B2 (en) 2003-05-06 2015-07-21 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
KR100742766B1 (ko) 2004-12-28 2007-07-25 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8913225B2 (en) 2004-12-28 2014-12-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8102507B2 (en) 2004-12-30 2012-01-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8354209B2 (en) 2004-12-30 2013-01-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9268236B2 (en) 2005-06-21 2016-02-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method having heat pipe with fluid to cool substrate and/or substrate holder
US9140996B2 (en) 2005-11-16 2015-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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