WO2005100273A1 - Appareil pour fabriquer du verre de quartz resistant a une chaleur intense - Google Patents

Appareil pour fabriquer du verre de quartz resistant a une chaleur intense Download PDF

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Publication number
WO2005100273A1
WO2005100273A1 PCT/KR2004/000845 KR2004000845W WO2005100273A1 WO 2005100273 A1 WO2005100273 A1 WO 2005100273A1 KR 2004000845 W KR2004000845 W KR 2004000845W WO 2005100273 A1 WO2005100273 A1 WO 2005100273A1
Authority
WO
WIPO (PCT)
Prior art keywords
porous silica
transparent glass
quartz glass
heat
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2004/000845
Other languages
English (en)
Inventor
Sung-Eun Park
Shin Kim
Han-Seog Oh
Kyung-Soo Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEBIT CO Ltd
THERMBACK ENGINEERING Co Ltd
Original Assignee
SEBIT CO Ltd
THERMBACK ENGINEERING Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEBIT CO Ltd, THERMBACK ENGINEERING Co Ltd filed Critical SEBIT CO Ltd
Priority to PCT/KR2004/000845 priority Critical patent/WO2005100273A1/fr
Publication of WO2005100273A1 publication Critical patent/WO2005100273A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01446—Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering
    • C03B37/0146—Furnaces therefor, e.g. muffle tubes, furnace linings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the present invention relates to an apparatus for manufacturing a high hest resistant quartz glass used for a high temperature poly-Si TFT-LCD (Thin Film Transistor-Liquid Crystal Display) substrate and in a semiconductor process.
  • a high temperature poly-Si TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • a uniform temperature distribution should be made over a wide area, that is wider than the porous silica to lower the concentration of OH groups in porous silica in homogenous way, and thereby provide glass with uniform characteristics.
  • a uniform and narrow range of high temperature area is provided, and then the porous silica is passed through said area (Japanese patent laid-open 1993-319848).
  • Fig. 2 is a schematic view of a conventional heating device for removing OH groups contained in porous silica.
  • Fig. 3 is a conventional heating device for forming transparent glass from silica porous, and comprises a heat generator(31), a tube(32), a fire resistant material(33), porous silica(34), an elevating device(35), a supporting shaft(36), a bottom pipe(37) and the like.
  • the conventional methods for removing OH groups and forming transparent glass with porous silica comprises: firstly loading the porous silica(24) inside the tube(22) of a heating device for removing OH groups as shown in Fig. 2 and heating the porous silica to a desired temperature while rotating it by using the elevating device(25) to remove OH groups; and subjecting the resulted porous silica(34) into a transparent glass forming device as shown in Fig. 3 to carry out a transparent glass forming process by passing the porous silica through a hot zone while rotating it by using the elevating device(35).
  • a heating device for removing OH groups and forming transparent glass comprises a heat generator(41), a tube(42), a fire resistant material(43), porous silica(44), an elevating device(45), a supporting shaft(46), a bottom pipe(47) and the like, wherein the heat generator(41) comprises the upper heat generator(41-l) for the heat treatment to conduct the OH group removing process and the lower heat generator(41-2) for the heat treatment to conduct transparent glass formation.
  • porous silica(44) is loaded in the tube(42), and its position in the apparatus is vertically adjusted to be in the area of the upper heat generator(41-l) for removing OH groups by using the elevating device(45).
  • the upper heat generator(41-l) is controlled to set the desired temperature for removing OH groups, and the heating process for removing OH groups in the porous silica is carried out while rotating the porous silica(44) by using the elevating device(45).
  • the temperature of the lower heat generator(41-2) for transparent glass formation is set to a desired temperature for transparent glass formation, and the heating process for transparent glass formation is carried out by descending the porous silica obtained from the upper heat generating area at a desired speed while rotating it by using the elevating device(45), and passing it through the narrow area having uniform temperature range for transparent glass formation.
  • the above-mentioned method involves a huge apparatus having a height of approximately twice as high as that of an apparatus manufactured according to the present invention, therefore the manufacture of a shaft, where high preciseness is required, becomes more difficult and the production cost also becomes increased.
  • the length of the tube when the length of the tube is longer, convection is occurred seriously owing to the temperature differences between the upper and the lower part in the tube, thereby uniform temperature control is hardly achieved.
  • the inner volume of the tube since the inner volume of the tube is large, the amount of gas fed to heat the atmosphere becomes greater, thereby causing increase in production cost.
  • the height of the ceiling of a building where the apparatus is positioned should be also concerned and restricted by the height of the apparatus. In order to improve the productivity of the quartz glass in the future, the size of a sample, particularly the length should be increased, and this makes the height of the apparatus greater, thereby making the problem worse.
  • the method includes an apparatus having greater height compared to the conventional ones and needs to use a tube and an elevating device part with prolonged length, thereby being hardly controllable. Further, when the length of the tube becomes longer, convection is occurred seriously owing to the temperature differences between the upper and the lower part in the tube, thereby uniform temperature control is hardly achieved. Moreover, since the inner volume of the tube is large, the amount of gas fed to heat the atmosphere becomes greater, thereby causing increase in production cost. Naturally, there still has been a demand for developing a simple apparatus used for an OH removing process and a transparent glass forming process in manufacturing high heat resistant quartz glass.
  • the object of the present invention to solve, the problems of conventional arts, is to provide a cost-effective and simple apparatus for carrying out removing OH groups from porous silica and transparent glass formation, thereby to provide high heat resistant quartz glass, which is used for high temperature poly-silicon TFT-LCD substrate or in a semiconductor process.
  • Fig. 1 is an illustrative view of an apparatus for manufacturing high heat resistant quartz glass, prepared according to the present invention.
  • Fig. 2 is an illustrative view of a conventional heat treatment device for removing OH groups in porous silica.
  • Fig. 3 is an illustrative view of a conventional device for transparent glass formation of porous silica.
  • Fig. 4 is an illustrative view of a conventional device for removing OH groups from porous silica and transparent glass formation simultaneously.
  • the present invention relates to a manufacturing apparatus for high heat resistant quartz glass, which can conduct an OH group removing process and a transparent glass forming process at once, and comprises: a tube(12) having a shape of a pipe, which is extended vertically in lengthwise direction to pass the porous silica through it; a series of three heat generators(l l) around the tube(12); a fire resistant material (insulation substance)(13) which is disposed to surround the heat generators and the tube; an elevating device(15) equipped for moving the porous silica in rotative way and to the upward and downward direction; a supporting shaft(16) for connecting the elevating device(15) with the porous silica; a bottom pipe(17) for conditioning the atmosphere in the tube, and the like.
  • the series of three heat generators comprise an upper heat generator(l l-l), a middle heat generator(ll-2) and a lower heat generator(ll-3), and the each heat generator is formed to be temperature-controlled separately.
  • a vertical furnace which generally employs one unit type heat generator, owing to severe convection, it is hardly made to provide a uniform temperature area over a wide area of the furnace in lengthwise direction.
  • all of the electric power of the heat generators in three different area i.e.
  • the upper heat generator(l l-l), the middle heat generator(l l-2) and the lower heat generator(l l-3) is switched on, and controlled to have a uniform temperature distribution in all of the areas through the upper to the lower area.
  • the temperature range for removing OH groups contained in the porous silica is 1000 ⁇ 1300°C.
  • the position, i.e. the height of the porous silica is adjusted to be in the uniform temperature range by using the elevating device(15), and the porous silica is heated while being slowly rotated.
  • the porous silica(14) is sent upward while switching off the power of the upper heat generator(l 1-1) and the lower heat generator(l 1-3) but maintaining the power of the middle heat generator( 11 -2) on, thereby setting a desired temperature for transparent glass formation.
  • the porous silica(1 ) is moved downward at a desired speed while being rotated, by using the elevating device(15) to be undergone the heat treatment process for transparent glass formation.
  • the temperature for transparent glass formation of the porous silica is 1450 ⁇ 1650°C.
  • the temperature is controlled to have a uniform temperature distribution in a wide area, however, in the transparent glass forming process, the temperature is controlled to have a uniform temperature distribution in a narrow area so that the heating is carried out to conduct transparent glass formation sequentially from the bottom part of the porous silica.
  • the present invention has developed an apparatus, which can proceed a process for removing OH groups from porous silica and a process for transparent glass formation together at once, to provide quartz glass. Therefore, quartz glass, which is used for a high temperature poly-Si TFT-LCD substrate or in a semiconductor process, can be manufactured by using the relatively simple apparatus for a reduced processing time, thereby economic mass production of the quartz glass becomes possible. Further, according to the present invention, control for a uniform temperature area becomes convenient by reducing the height of the apparatus, and the amount of gas used for conditioning the atmosphere is reduced, thereby reducing the production cost.
  • the apparatus is designed to be relatively less restricted by the height of the ceiling of a building where it is positioned, therefore it has potential great advantages in the manufacture of quartz glass in large scale in the future.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Thermal Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

L'invention concerne un appareil pour fabriquer du verre de quartz résistant à une chaleur intense et notamment un appareil pour fabriquer du verre de quartz résistant à une chaleur intense pour un substrat TFT-LC à base Poly-Si, et un procédé utilisant des semi-conducteurs.
PCT/KR2004/000845 2004-04-13 2004-04-13 Appareil pour fabriquer du verre de quartz resistant a une chaleur intense Ceased WO2005100273A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2004/000845 WO2005100273A1 (fr) 2004-04-13 2004-04-13 Appareil pour fabriquer du verre de quartz resistant a une chaleur intense

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2004/000845 WO2005100273A1 (fr) 2004-04-13 2004-04-13 Appareil pour fabriquer du verre de quartz resistant a une chaleur intense

Publications (1)

Publication Number Publication Date
WO2005100273A1 true WO2005100273A1 (fr) 2005-10-27

Family

ID=35149913

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2004/000845 Ceased WO2005100273A1 (fr) 2004-04-13 2004-04-13 Appareil pour fabriquer du verre de quartz resistant a une chaleur intense

Country Status (1)

Country Link
WO (1) WO2005100273A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107151094A (zh) * 2016-03-03 2017-09-12 信越化学工业株式会社 热处理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575463A (en) * 1984-08-24 1986-03-11 Itt Corporation Method of applying hermetic coating on optical fiber
JPS62288129A (ja) * 1986-06-07 1987-12-15 Tatsuta Electric Wire & Cable Co Ltd 光フアイバ用ガラス母材の製造方法
JP2000281358A (ja) * 1999-03-31 2000-10-10 Nikon Corp 合成石英ガラスの製造方法、製造装置、および合成石英ガラス
JP2003165727A (ja) * 2001-10-08 2003-06-10 Carl-Zeiss-Stiftung 石英ガラス成形体の屈折率均一性を改善する装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575463A (en) * 1984-08-24 1986-03-11 Itt Corporation Method of applying hermetic coating on optical fiber
JPS62288129A (ja) * 1986-06-07 1987-12-15 Tatsuta Electric Wire & Cable Co Ltd 光フアイバ用ガラス母材の製造方法
JP2000281358A (ja) * 1999-03-31 2000-10-10 Nikon Corp 合成石英ガラスの製造方法、製造装置、および合成石英ガラス
JP2003165727A (ja) * 2001-10-08 2003-06-10 Carl-Zeiss-Stiftung 石英ガラス成形体の屈折率均一性を改善する装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107151094A (zh) * 2016-03-03 2017-09-12 信越化学工业株式会社 热处理装置
CN107151094B (zh) * 2016-03-03 2021-06-01 信越化学工业株式会社 热处理装置

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