WO2006079422A1 - Circuit protecteur dans une entrée d'alimentation électrique d'un dispositif électrique et utilisation d'un circuit protecteur - Google Patents

Circuit protecteur dans une entrée d'alimentation électrique d'un dispositif électrique et utilisation d'un circuit protecteur Download PDF

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Publication number
WO2006079422A1
WO2006079422A1 PCT/EP2005/053799 EP2005053799W WO2006079422A1 WO 2006079422 A1 WO2006079422 A1 WO 2006079422A1 EP 2005053799 W EP2005053799 W EP 2005053799W WO 2006079422 A1 WO2006079422 A1 WO 2006079422A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
metal
field effect
effect transistor
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2005/053799
Other languages
German (de)
English (en)
Inventor
Michael Bahr
Christian Siebert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2006079422A1 publication Critical patent/WO2006079422A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/006—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of too high or too low voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Definitions

  • Protection circuit in a power supply input of an electrical device and use of a protection circuit
  • the invention relates to a protective circuit for a power supply input of an electrical device, comprising a first metal oxide semiconductor device field effect transistor. Furthermore, the invention relates to the use of a protective circuit in the power supply input of an electrical device.
  • MOSFET Metal-Oxide-Semicondutor
  • MOSFET transistors are mainly used in analog technology for amplifiers and switching stages. Their particular advantage over bipolar transistors lies in the possibility of powerless control. It achieves small switching times and high cut-off frequencies with MOSFET. The egg- Noise is low and less than the value of bipolar transistors.
  • a MOSFET is distinguished from bipolar transistors by its power electronics, d. H . due to the power-free control and its very low switch-on resistance.
  • MOSFET transistors are used as switches.
  • the MOSFET transistors allow circuits with low power dissipation, since only during the switching operation a noteworthy current flows.
  • Metal-oxide semiconductor device field effect transistors are also provided with corresponding wiring as a leadless diode.
  • D. H These circuits block the flow of electrons in one direction while allowing them to pass in the other direction. In the forward direction results in a much lower voltage drop than on a conventional diode (load current x on resistance of the MOSFET).
  • a diode consists of two layers, an n-doped and a p-doped semiconductor material, which contact each other. Due to repulsion or Attraction of equal charges, depending on the polarity of an external voltage source either a current flow instead or is completely suppressed. Thus, a diode conducts only in one direction.
  • Metal oxide semiconductor device field effect transistors consist of a p-type crystal, the substrate. In the substrate, two n-type islands are doped. The crystal is usually covered with silicon dioxide (SiO 2 ) and forms an insulating layer. However, the n-conducting islands are still exposed ⁇ and led via contacts to the outside. These contacts are referred to as S (source) and D (drain). On the SiIi- ziumdioxid is an aluminum layer as a gate electrode G on ⁇ evaporated.
  • surge arresters In order to additionally protect the electrical equipment against overvoltages, surge arresters, for example, are used. Overvoltage protection means protection of a circuit or a component against the consequences of applying too high a supply voltage or external voltage.
  • Surge arresters for example, consist of a glass or ceramic body, which is equipped on the outer sides with two connecting wires. Inside the housing are electrodes. The space in between is the gas discharge path, which consists of a noble gas, such as argon or neon. The electrical properties of such a surge arrester are determined by gas type, gas pressure, materials, electrode coating and additives.
  • a disadvantage of the known solutions is that a plurality of different protection circuits for the different purposes, d. H . , for which polarity reversal, the non-conducting diode and the overvoltage protection are required.
  • the use of the plurality of different protection circuits is expensive, expensive and causes considerable power losses.
  • the object of the invention is to provide a protective circuit for the power supply input of an electrical device, which is simple to implement, inexpensive and causes only low power losses, which should be used both as a zero-voltage diode against reverse polarity, and as overvoltage protection. Furthermore, a protection circuit for the power supply input of an electrical device to be created, both as reverse polarity, as leadless diode and can be used as surge protection.
  • a protection circuit for a power supply input of an electrical device comprising a first metal oxide semiconductor device field effect transistor, wherein the protection circuit comprises at least a second metal-oxide semiconductor device field effect transistor and a circuit element is an easy to implement and cost-effective protection circuit, the only low losses.
  • Such a protection circuit according to the invention can be used in two modes, d. H . , as a leadless diode form a protection circuit against reverse polarity and can be used as overvoltage protection.
  • the first metal-oxide-semiconductor device field-effect transistor blocks so that there is no current flow and thus no destruction of the downstream electrical devices.
  • the maximum blocking voltage is determined by the first metal oxide semiconductor device field effect transistor.
  • D. H . at a negative input voltage at the D-contact D (drain) is the Substratdio ⁇ de of the first metal-oxide-Halbleiterbauteil- field effect transistor in the reverse direction. Since no gate-source voltage can build up with this polarity, the first metal-oxide-semiconductor device field-effect transistor is blocked. There can be no current and the downstream electrical device at the output of the protection circuit is protected against reverse polarity.
  • An advantage of the protection circuit according to the invention is further that when a positive input voltage to the D-contact D (drain) and the S-contact S (source) of the first and the second metal-oxide-Halbleiterbauteil- field effect transistor is positive, since the Protective diode of the first metal oxide semiconductor device field effect transistor is in the flow direction.
  • the two metal-oxide semiconductor device field-effect transistors are arranged one after the other in the power supply input of the electrical device.
  • the S-contact S (source) opposite the gate electrode G positive until the two metal-oxide semiconductor device field effect transistors are conductive and the electrical means at the output of the second metal oxide semiconductor device field effect transistor is supplied with power.
  • the power loss at the two metal oxide semiconductor device field effect transistors is very low, since only the ohmic resistance acts.
  • the protective circuit according to the invention upon reaching the maximum value of the output voltage, the second metal-oxide-semiconductor device field effect transistor through the inventive circuit element provided between the first metal-oxide-semiconductor device field-effect transistor and the second first metal-oxide-semiconductor device field-effect transistor, the output voltage limits the maximum permissible value and the subsequent electrical device, in particular a circuit, protects. D. H .
  • the gate-source voltage is reduced by the circuit element and thus limits the output voltage through the second metal-oxide semiconductor device field effect transistor.
  • the second metal oxide semiconductor device field effect transistor operates as a series regulator in this state.
  • the first metal oxide semiconductor device field effect transistor is bridged by its protective diode.
  • this protection circuit with at least two successively arranged metal-oxide-Halbleiterbauteil- field effect transistors, wherein a switching element is provided for controlling the maximum output voltage, is a
  • Protection circuit for a power supply input of an electrical device created that is structurally simple, inexpensive and space-saving.
  • D. H . the two metal oxide semiconductor device field effect transistors are differently incorporated in the power supply input.
  • the first metal oxide semiconductor device field effect transistor is arranged in the power supply input such that the input voltage at the D-contact D (drain) is applied.
  • the second metal oxide semiconductor device field effect transistor is disposed in the power supply input such that the output voltage from the S contact S (source) of the first metal oxide semiconductor device field effect transistor is at the S contact S (source) of the second metal Oxide Halbleiterbauteil- field effect transistor is applied as an input voltage.
  • a protection circuit in which the circuit element has a control unit.
  • ⁇ a maximum allowable value of the output voltage at the output of the second metal-oxide field effect transistor Halbleiterbauteil- proceed reduces the control unit, the gate-source voltage and so reduces the outgoing output voltage.
  • a protection circuit wherein the circuit element, the connection of the two source contacts and the connection of the two gate electrodes of the metal-oxide semiconductor device field effect transistors and the connection between the second metal-oxide-Halbleiterbauteil- field effect transistor to the electrical device via respective lines contacted.
  • the measurement and the reduction of the output voltage at the output of the second metal-oxide semiconductor device field effect transistor as well as the bridging of the protective diode of the first metal-oxide field effect transistor are Halbleiterbauteil- ert gesteu ⁇ by the control unit.
  • the object is further achieved by the use of the protective circuit according to the invention described above as polarity reversal protection, as a non-conducting diode and as overvoltage protection for a power supply input of an electrical device. tion, solved.
  • Figure 1 is a protection circuit according to the invention.
  • the protection circuit 1 comprises a first metal oxide semiconductor device field effect transistor 2, a second metal oxide semiconductor device field effect transistor 3 and a circuit element 4.
  • the protective circuit 1 is arranged in the power supply input 5 of an electrical device 6 as a reverse polarity protection, as a leadless diode and as overvoltage protection for the power supply input 5 of the electrical device 6.
  • the first metal-oxide semiconductor device field effect transistor 2 and the second metal oxide Halbleiterbauteil- field effect transistor 3 are connected to each other on the one via the S-S contacts (source) as well as the GATEE ⁇ lektroden G.
  • the output voltage applied to the S contact of the first metal oxide semiconductor device field effect transistor 2 represents the input voltage at the D contact D (drain) of the second metal oxide semiconductor device field effect transistor 3.
  • the electrical ⁇ cal device 6 is connected downstream of the second metal-oxide semiconductor device field effect transistor 3, d. H . with the D-contact D (drain) of the second metal-oxide Semiconductor device field effect transistor 3 connected.
  • the control unit 4 contacts via lines both connections between the two metal-oxide semiconductor device field effect transistor 2, 3 and the connection between the second metal-oxide semiconductor device field effect transistor 3 and the electrical device 6.
  • Such a protection circuit can as
  • the circuit element 4 is a control unit.
  • This control unit can be used in a simple and cost-effective manner as a reverse polarity protection, as a leadless diode and as an overvoltage protection for a power supply input 5 of an electrical device 6.
  • the metal oxide semiconductor device field effect transistors 2, 3 serve as a leadless diode.
  • the control unit 4 measures the output voltage clamping ⁇ discharged from the second metal oxide Halbleiterbauteil- field effect transistor 3 to the electrical device. 6 This is done via the contacts or. the lines leading to the connection between the second metal-oxide-semiconductor device field-effect transistor 3 and the electrical device 6. When a maximum permissible value is exceeded, the second metal-oxide-semiconductor device Field effect transistor 3 converted by the control unit 4 to a longitudinal regulator, which limits the output voltage to the maximum allowable value, thereby protecting the subsequent circuit.

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un circuit protecteur pour une entrée d'alimentation électrique d'un dispositif électrique, ce circuit comportant un premier transistor à effet de champ à élément semi-conducteur d'oxyde métallique, au moins un deuxième transistor à effet de champ à élément semi-conducteur d'oxyde métallique et un élément de circuit. La présente invention porte également sur l'utilisation d'un circuit protecteur de ce type.
PCT/EP2005/053799 2005-01-26 2005-08-03 Circuit protecteur dans une entrée d'alimentation électrique d'un dispositif électrique et utilisation d'un circuit protecteur Ceased WO2006079422A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005003682A DE102005003682A1 (de) 2005-01-26 2005-01-26 Schutzschaltung in einem Stromversorgungseingang einer elektrischen Einrichtung und Verwendung einer Schutzschaltung
DE102005003682.1 2005-01-26

Publications (1)

Publication Number Publication Date
WO2006079422A1 true WO2006079422A1 (fr) 2006-08-03

Family

ID=35414594

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/053799 Ceased WO2006079422A1 (fr) 2005-01-26 2005-08-03 Circuit protecteur dans une entrée d'alimentation électrique d'un dispositif électrique et utilisation d'un circuit protecteur

Country Status (3)

Country Link
DE (1) DE102005003682A1 (fr)
TW (1) TW200627741A (fr)
WO (1) WO2006079422A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011075089A1 (fr) * 2009-12-18 2011-06-23 Hidria Aet Družba Za Proizvodnjo Vžignih Sistemov In Elektronike D.O.O. Circuit d'alimentation électrique pour la commande d'une bougie de préchauffage et d'une électrovanne
US8213143B2 (en) 2007-08-02 2012-07-03 Dspace Digital Signal Processing And Control Engineering Gmbh Circuit arrangement for the protection of electronic components or assemblies
JP2015532034A (ja) * 2012-08-08 2015-11-05 アナログ・デバイシズ・インコーポレーテッド 増幅器故障保護のための装置および方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015202370A1 (de) * 2015-02-10 2016-08-11 Osram Gmbh Schaltungsanordnung zum Betreiben von Halbleiterlichtquellen
US20190140444A1 (en) 2016-04-15 2019-05-09 Littelfuse Semiconductor (Wuxi) Co., Ltd. Overvoltage Protection and Linear Regulator Device Module
CN109449911B (zh) * 2018-12-26 2023-11-28 上海艾为电子技术股份有限公司 一种保护电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5410441A (en) * 1993-02-01 1995-04-25 Motorola, Inc. Circuit for protecting DC powered devices from improper supply voltages
JPH09289738A (ja) * 1996-02-22 1997-11-04 Hitachi Metals Ltd 電池監視回路
EP0854555A2 (fr) * 1996-12-21 1998-07-22 STMicroelectronics, Inc. Protection d'alimentation intégré
US6304422B1 (en) * 1998-04-21 2001-10-16 Infineon Technologies Ag Polarity reversal protection circuit

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
DE59103234D1 (de) * 1991-01-16 1994-11-17 Siemens Ag Verpolungs- und Überspannungsschutz für Schaltungsanordnungen.
DE4432957C1 (de) * 1994-09-16 1996-04-04 Bosch Gmbh Robert Schaltmittel
EP1357658B8 (fr) * 2002-04-22 2009-12-16 Semiconductor Components Industries, LLC Circuit de protection contre les tensions transitoires et les invesions de polarité
US6922322B2 (en) * 2003-01-31 2005-07-26 Delphi Technologies, Inc. High side reverse and overvoltage transient protection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5410441A (en) * 1993-02-01 1995-04-25 Motorola, Inc. Circuit for protecting DC powered devices from improper supply voltages
JPH09289738A (ja) * 1996-02-22 1997-11-04 Hitachi Metals Ltd 電池監視回路
EP0854555A2 (fr) * 1996-12-21 1998-07-22 STMicroelectronics, Inc. Protection d'alimentation intégré
US6304422B1 (en) * 1998-04-21 2001-10-16 Infineon Technologies Ag Polarity reversal protection circuit

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FEST J-P: "SAUVEGARDE: GERER L'INTENSITE DANS LES DEUX SENS", ELECTRONIQUE, CEP COMMUNICATION, PARIS, FR, no. 91, April 1999 (1999-04-01), pages 14, XP000896733, ISSN: 1157-1152 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 03 27 February 1998 (1998-02-27) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8213143B2 (en) 2007-08-02 2012-07-03 Dspace Digital Signal Processing And Control Engineering Gmbh Circuit arrangement for the protection of electronic components or assemblies
WO2011075089A1 (fr) * 2009-12-18 2011-06-23 Hidria Aet Družba Za Proizvodnjo Vžignih Sistemov In Elektronike D.O.O. Circuit d'alimentation électrique pour la commande d'une bougie de préchauffage et d'une électrovanne
JP2015532034A (ja) * 2012-08-08 2015-11-05 アナログ・デバイシズ・インコーポレーテッド 増幅器故障保護のための装置および方法

Also Published As

Publication number Publication date
DE102005003682A1 (de) 2006-08-24
TW200627741A (en) 2006-08-01

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