WO2007141017A8 - Procédé de fabrication de silicium cristallin et d'hydrogène gazeux - Google Patents

Procédé de fabrication de silicium cristallin et d'hydrogène gazeux

Info

Publication number
WO2007141017A8
WO2007141017A8 PCT/EP2007/005034 EP2007005034W WO2007141017A8 WO 2007141017 A8 WO2007141017 A8 WO 2007141017A8 EP 2007005034 W EP2007005034 W EP 2007005034W WO 2007141017 A8 WO2007141017 A8 WO 2007141017A8
Authority
WO
WIPO (PCT)
Prior art keywords
crystalline silicon
gaseous hydrogen
producing crystalline
producing
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2007/005034
Other languages
German (de)
English (en)
Other versions
WO2007141017A2 (fr
Inventor
Peter Plichta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of WO2007141017A2 publication Critical patent/WO2007141017A2/fr
Publication of WO2007141017A8 publication Critical patent/WO2007141017A8/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen; Reversible storage of hydrogen
    • C01B3/02—Production of hydrogen; Production of gaseous mixtures containing hydrogen
    • C01B3/22—Production of hydrogen; Production of gaseous mixtures containing hydrogen by decomposition of gaseous or liquid organic compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/984—Preparation from elemental silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/043—Monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F11/00—Compounds of calcium, strontium, or barium
    • C01F11/20—Halides
    • C01F11/22—Fluorides
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C25B1/24—Halogens or compounds thereof
    • C25B1/245—Fluorine; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
    • C25C3/06—Electrolytic production, recovery or refining of metals by electrolysis of melts of aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
    • C01B2203/02—Processes for making hydrogen or synthesis gas
    • C01B2203/0266—Processes for making hydrogen or synthesis gas containing a decomposition step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Geology (AREA)
  • Silicon Compounds (AREA)
PCT/EP2007/005034 2006-06-10 2007-06-06 Procédé de fabrication de silicium cristallin et d'hydrogène gazeux Ceased WO2007141017A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006029282A DE102006029282A1 (de) 2006-06-10 2006-06-10 Zyklische großtechnische Darstellung von kristallinem Silizium/Fotosilizium oder dem Treibstoff Silane.., einem Kreislauf immer erneut zum Einsatz kommen, so dass nur eine Teilmenge von elektrischem Strom eingespeist werden muss
DE102006029282.0 2006-06-10

Publications (2)

Publication Number Publication Date
WO2007141017A2 WO2007141017A2 (fr) 2007-12-13
WO2007141017A8 true WO2007141017A8 (fr) 2008-04-10

Family

ID=38663869

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/005034 Ceased WO2007141017A2 (fr) 2006-06-10 2007-06-06 Procédé de fabrication de silicium cristallin et d'hydrogène gazeux

Country Status (2)

Country Link
DE (1) DE102006029282A1 (fr)
WO (1) WO2007141017A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5552284B2 (ja) * 2009-09-14 2014-07-16 信越化学工業株式会社 多結晶シリコン製造システム、多結晶シリコン製造装置および多結晶シリコンの製造方法
CN102399618B (zh) * 2011-10-08 2013-05-15 江苏佳宇资源利用股份有限公司 一种从晶硅切割废砂浆中资源化回收碳化硅组份的方法
DE102013020962A1 (de) 2013-12-12 2015-06-18 Daimler Ag System und Verfahren zur Bereitstellung von elektrischer Energie in einem Kraftfahrzeug unter Verwendung einer AMTEC-Einrichtung

Also Published As

Publication number Publication date
DE102006029282A1 (de) 2007-12-13
WO2007141017A2 (fr) 2007-12-13

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