WO2008105198A1 - 導電膜および導電膜の製造方法 - Google Patents

導電膜および導電膜の製造方法 Download PDF

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Publication number
WO2008105198A1
WO2008105198A1 PCT/JP2008/050806 JP2008050806W WO2008105198A1 WO 2008105198 A1 WO2008105198 A1 WO 2008105198A1 JP 2008050806 W JP2008050806 W JP 2008050806W WO 2008105198 A1 WO2008105198 A1 WO 2008105198A1
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WIPO (PCT)
Prior art keywords
conductive film
zno
film layer
oxide
group iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/050806
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English (en)
French (fr)
Inventor
Yutaka Kishimoto
Souko Fukahori
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to EP08703650A priority Critical patent/EP2061041A4/en
Priority to JP2008529067A priority patent/JP4947051B2/ja
Priority to CN2008800000606A priority patent/CN101542639B/zh
Priority to KR1020087018927A priority patent/KR101057571B1/ko
Priority to US12/182,716 priority patent/US20080280119A1/en
Publication of WO2008105198A1 publication Critical patent/WO2008105198A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31507—Of polycarbonate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31786—Of polyester [e.g., alkyd, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31935—Ester, halide or nitrile of addition polymer

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

　実用可能な耐湿性と、透明導電膜として必要な特性を備え、しかも経済性に優れた、ＺｎＯ系の導電膜およびその製造方法を提供する。 【解決手段】基体１１の表面に、III族元素酸化物をドーパントとして含み、または含まない、ＺｎＯを主成分とする第１のＺｎＯ導電膜層１を形成し、その上に、種類の異なるIII族元素酸化物を含む、透明性を有する第２のＺｎＯ導電膜層２を形成して複数層構造を有する導電膜１０を形成する。 　第１のＺｎＯ導電膜層の膜厚を５～５０nm以下とする。 　また、第２のＺｎＯ導電膜層以降のＺｎＯ導電膜層を、酸化亜鉛（ＺｎＯ）を主成分とし、III族元素酸化物を７重量％以下の割合で含有するものとする。 　第１のＺｎＯ導電膜層を、その上に形成される第２のＺｎＯ導電膜層以降の導電膜層の結晶性を向上させるために必要な、結晶性の高いＺｎＯ導電膜が得られるような条件下（例えば加熱条件下）で形成する。
PCT/JP2008/050806 2007-02-26 2008-01-22 導電膜および導電膜の製造方法 Ceased WO2008105198A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08703650A EP2061041A4 (en) 2007-02-26 2008-01-22 LADDERING FILM AND METHOD FOR PRODUCING A CONDUCTIVE FILM
JP2008529067A JP4947051B2 (ja) 2007-02-26 2008-01-22 導電膜および導電膜の製造方法
CN2008800000606A CN101542639B (zh) 2007-02-26 2008-01-22 导电膜及导电膜的制造方法
KR1020087018927A KR101057571B1 (ko) 2007-02-26 2008-01-22 도전막 및 도전막의 제조방법
US12/182,716 US20080280119A1 (en) 2007-02-26 2008-07-30 Conductive film and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-046010 2007-02-26
JP2007046010 2007-02-26

Related Child Applications (1)

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US12/182,716 Continuation US20080280119A1 (en) 2007-02-26 2008-07-30 Conductive film and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2008105198A1 true WO2008105198A1 (ja) 2008-09-04

Family

ID=39721038

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PCT/JP2008/050806 Ceased WO2008105198A1 (ja) 2007-02-26 2008-01-22 導電膜および導電膜の製造方法

Country Status (6)

Country Link
US (1) US20080280119A1 (ja)
EP (1) EP2061041A4 (ja)
JP (1) JP4947051B2 (ja)
KR (1) KR101057571B1 (ja)
CN (1) CN101542639B (ja)
WO (1) WO2008105198A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009265629A (ja) * 2008-03-31 2009-11-12 Kochi Univ Of Technology 表示用基板及びその製造方法並びに表示装置
JP2012049084A (ja) * 2010-08-30 2012-03-08 Sumitomo Metal Mining Co Ltd 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
JP2012243981A (ja) * 2011-05-20 2012-12-10 Ulvac Japan Ltd 太陽電池、太陽電池用透明導電膜付き基板及びそれらの製造方法
JP2013119664A (ja) * 2011-12-09 2013-06-17 Nippon Telegr & Teleph Corp <Ntt> 透明導電膜およびその形成方法
WO2015118726A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス
WO2015118724A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス

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EP2071586A4 (en) * 2007-09-05 2014-03-05 Murata Manufacturing Co TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING A TRANSPARENT CONDUCTIVE FILM
GB0803702D0 (en) * 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
JP5022341B2 (ja) * 2008-11-19 2012-09-12 三菱重工業株式会社 光電変換装置
US20110195540A1 (en) * 2010-02-05 2011-08-11 Hitachi Chemical Company, Ltd. Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell
US20110195541A1 (en) * 2010-02-05 2011-08-11 Hitachi Chemical Company, Ltd. Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell
KR20130008037A (ko) * 2010-03-05 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
JP5630747B2 (ja) 2010-05-14 2014-11-26 リンテック株式会社 酸化亜鉛系導電性積層体及びその製造方法並びに電子デバイス
DE102010038796B4 (de) * 2010-08-02 2014-02-20 Von Ardenne Anlagentechnik Gmbh Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung
US9546416B2 (en) * 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
JP2012144384A (ja) * 2011-01-07 2012-08-02 Tokyo Institute Of Technology 導電性酸化亜鉛膜の製造方法
US20130019929A1 (en) * 2011-07-19 2013-01-24 International Business Machines Reduction of light induced degradation by minimizing band offset
KR101178496B1 (ko) * 2011-09-28 2012-09-07 한국에너지기술연구원 이중구조의 투명전도막 및 그 제조방법
CN102694066B (zh) * 2012-04-01 2015-03-11 成都旭双太阳能科技有限公司 一种提高太阳能电池板光电转换效率的方法
KR101293647B1 (ko) 2012-07-27 2013-08-13 삼성코닝정밀소재 주식회사 투명 전도성 산화물 박막 기판, 그 제조방법, 이를 포함하는 유기전계발광소자 및 광전지
US20140203322A1 (en) * 2013-01-23 2014-07-24 Epistar Corporation Transparent Conductive Structure, Device comprising the same, and the Manufacturing Method thereof
RU2531021C2 (ru) * 2013-03-05 2014-10-20 Федеральное государственное бюджетное учреждение науки "Институт физики им. Х.И. Амирханова Дагестанского научного центра Российской Академии наук" Способ формирования слоев на основе оксида цинка
CN104051551B (zh) * 2013-03-14 2017-03-01 台湾积体电路制造股份有限公司 薄膜太阳能电池及其形成方法
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CN109878227B (zh) * 2019-01-24 2020-09-25 江苏大学 一种提高tco薄膜综合光电特性的激光加工方法
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CN117712261B (zh) * 2024-02-02 2024-05-14 江西兆驰半导体有限公司 Led及其制备方法

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009265629A (ja) * 2008-03-31 2009-11-12 Kochi Univ Of Technology 表示用基板及びその製造方法並びに表示装置
TWI514600B (zh) * 2010-08-30 2015-12-21 Sumitomo Metal Mining Co A transparent conductive film laminate, a method for manufacturing the same, and a thin film solar cell and a method for manufacturing the same
JP2012049084A (ja) * 2010-08-30 2012-03-08 Sumitomo Metal Mining Co Ltd 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
WO2012029797A1 (ja) * 2010-08-30 2012-03-08 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
CN103081028A (zh) * 2010-08-30 2013-05-01 住友金属矿山株式会社 透明导电膜层叠体及其制造方法、以及薄膜太阳能电池及其制造方法
US9349885B2 (en) 2010-08-30 2016-05-24 Sumitomo Metal Mining Co., Ltd. Multilayer transparent electroconductive film and method for manufacturing same, as well as thin-film solar cell and method for manufacturing same
JP2012243981A (ja) * 2011-05-20 2012-12-10 Ulvac Japan Ltd 太陽電池、太陽電池用透明導電膜付き基板及びそれらの製造方法
JP2013119664A (ja) * 2011-12-09 2013-06-17 Nippon Telegr & Teleph Corp <Ntt> 透明導電膜およびその形成方法
WO2015118726A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス
WO2015119240A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、及び透明導電性積層体を用いてなる電子デバイス
WO2015119238A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、及び透明導電性積層体を用いてなる電子デバイス
WO2015118724A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス
JPWO2015119238A1 (ja) * 2014-02-07 2017-03-30 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、及び透明導電性積層体を用いてなる電子デバイス
JPWO2015119240A1 (ja) * 2014-02-07 2017-03-30 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、及び透明導電性積層体を用いてなる電子デバイス

Also Published As

Publication number Publication date
KR20090018598A (ko) 2009-02-20
JPWO2008105198A1 (ja) 2010-06-03
EP2061041A1 (en) 2009-05-20
US20080280119A1 (en) 2008-11-13
CN101542639B (zh) 2013-07-31
JP4947051B2 (ja) 2012-06-06
EP2061041A4 (en) 2011-06-29
KR101057571B1 (ko) 2011-08-17
CN101542639A (zh) 2009-09-23

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