WO2008143166A1 - Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス - Google Patents

Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス Download PDF

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WO2008143166A1
WO2008143166A1 PCT/JP2008/059018 JP2008059018W WO2008143166A1 WO 2008143166 A1 WO2008143166 A1 WO 2008143166A1 JP 2008059018 W JP2008059018 W JP 2008059018W WO 2008143166 A1 WO2008143166 A1 WO 2008143166A1
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nitride
iii
group
element belonging
semiconductor
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French (fr)
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Kenji Fujito
Kazumasa Kiyomi
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Priority to US12/600,352 priority Critical patent/US8269251B2/en
Priority to KR1020097026018A priority patent/KR101488545B1/ko
Priority to EP08764307A priority patent/EP2154272A4/en
Publication of WO2008143166A1 publication Critical patent/WO2008143166A1/ja
Anticipated expiration legal-status Critical
Priority to US13/571,782 priority patent/US20120305983A1/en
Priority to US13/932,249 priority patent/US9112096B2/en
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    • H—ELECTRICITY
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    • C30—CRYSTAL GROWTH
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
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    • H10H20/80—Constructional details
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    • H—ELECTRICITY
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    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
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    • H10P14/274—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using seed materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

本発明のＩＩＩ族窒化物半導体結晶の製造方法では、非極性面を有する種結晶を準備し、前記非極性面からＩＩＩ族窒化物半導体を気相中で成長させる成長工程を具備し、前記成長工程は、前記種結晶の＋Ｃ軸方向に伸びるようにＩＩＩ族窒化物半導体を成長させる。これによって、高品位で大面積の非極性面を有するＩＩＩ－Ｖ族化合物窒化物半導体結晶を得ることができる。
PCT/JP2008/059018 2007-05-17 2008-05-16 Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス Ceased WO2008143166A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/600,352 US8269251B2 (en) 2007-05-17 2008-05-16 Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device
KR1020097026018A KR101488545B1 (ko) 2007-05-17 2008-05-16 Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스
EP08764307A EP2154272A4 (en) 2007-05-17 2008-05-16 METHOD FOR PRODUCING A SEMICONDUCTOR CRYSTAL FROM A NITRIDE OF A GROUP III ELEMENT, A SEMICONDUCTOR SUBSTRATE MADE FROM A NITRIDE OF AN ELEMENT OF GROUP III, AND A LIGHT EMITTING SEMICONDUCTOR DEVICE
US13/571,782 US20120305983A1 (en) 2007-05-17 2012-08-10 Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device
US13/932,249 US9112096B2 (en) 2007-05-17 2013-07-01 Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-131955 2007-05-17
JP2007131955 2007-05-17

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/600,352 A-371-Of-International US8269251B2 (en) 2007-05-17 2008-05-16 Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device
US13/571,782 Continuation US20120305983A1 (en) 2007-05-17 2012-08-10 Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device

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WO2008143166A1 true WO2008143166A1 (ja) 2008-11-27

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US (3) US8269251B2 (ja)
EP (1) EP2154272A4 (ja)
JP (4) JP2008308401A (ja)
KR (1) KR101488545B1 (ja)
WO (1) WO2008143166A1 (ja)

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US9890474B2 (en) 2013-02-22 2018-02-13 Mitsubishi Chemical Corporation Crystal of nitride of group-13 metal on periodic table, and method for producing the same

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JP5332168B2 (ja) * 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
EP2261401A4 (en) * 2008-03-03 2012-11-28 Mitsubishi Chem Corp NITRIDE-SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREFOR
JP5461859B2 (ja) * 2008-03-28 2014-04-02 Ｊｆｅミネラル株式会社 ＡｌＮバルク単結晶及び半導体デバイス並びにＡｌＮ単結晶バルクの製造方法
US9404197B2 (en) * 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
WO2010100699A1 (ja) * 2009-03-06 2010-09-10 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
US20120021549A1 (en) * 2009-04-03 2012-01-26 Panasonic Corporation Method for growing crystals of nitride semiconductor, and process for manufacture of semiconductor device
WO2010140564A1 (ja) * 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法
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US20130214325A1 (en) * 2010-10-29 2013-08-22 Tokuyama Corporation Method for Manufacturing Optical Element
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JP5480169B2 (ja) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
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JP6344688B2 (ja) * 2013-06-10 2018-06-20 株式会社トクヤマ アルミニウム系ｉｉｉ族窒化物単結晶の製造方法
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JP7228467B2 (ja) * 2019-05-27 2023-02-24 信越化学工業株式会社 Ｉｉｉ族化合物基板の製造方法及びｉｉｉ族化合物基板
WO2025191815A1 (ja) * 2024-03-14 2025-09-18 日本碍子株式会社 ＡｌＮ単結晶基板及びデバイス

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