PL1769105T3 - Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania - Google Patents
Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzaniaInfo
- Publication number
- PL1769105T3 PL1769105T3 PL05751252T PL05751252T PL1769105T3 PL 1769105 T3 PL1769105 T3 PL 1769105T3 PL 05751252 T PL05751252 T PL 05751252T PL 05751252 T PL05751252 T PL 05751252T PL 1769105 T3 PL1769105 T3 PL 1769105T3
- Authority
- PL
- Poland
- Prior art keywords
- preparation
- gallium nitride
- crystalline gallium
- bulk mono
- mono
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL04368483A PL368483A1 (pl) | 2004-06-11 | 2004-06-11 | Monokryształy azotku zawierającego gal oraz jego zastosowanie |
| PL04368781A PL368781A1 (pl) | 2004-06-25 | 2004-06-25 | Monokryształ azotku zawierającego gal oraz jego zastosowanie |
| EP05751252.7A EP1769105B1 (en) | 2004-06-11 | 2005-06-10 | Bulk mono-crystalline gallium nitride and method for its preparation |
| PCT/JP2005/011093 WO2005121415A1 (en) | 2004-06-11 | 2005-06-10 | Bulk mono-crystalline gallium-containing nitride and its application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL1769105T3 true PL1769105T3 (pl) | 2014-11-28 |
Family
ID=34972821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL05751252T PL1769105T3 (pl) | 2004-06-11 | 2005-06-10 | Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8398767B2 (pl) |
| EP (1) | EP1769105B1 (pl) |
| JP (1) | JP5014804B2 (pl) |
| KR (1) | KR100848380B1 (pl) |
| PL (1) | PL1769105T3 (pl) |
| WO (1) | WO2005121415A1 (pl) |
Families Citing this family (66)
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-
2005
- 2005-06-10 US US11/629,109 patent/US8398767B2/en not_active Expired - Fee Related
- 2005-06-10 EP EP05751252.7A patent/EP1769105B1/en not_active Expired - Lifetime
- 2005-06-10 WO PCT/JP2005/011093 patent/WO2005121415A1/en not_active Ceased
- 2005-06-10 KR KR1020067027510A patent/KR100848380B1/ko not_active Expired - Fee Related
- 2005-06-10 PL PL05751252T patent/PL1769105T3/pl unknown
- 2005-06-10 JP JP2006551658A patent/JP5014804B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070033384A (ko) | 2007-03-26 |
| US20080303032A1 (en) | 2008-12-11 |
| EP1769105A1 (en) | 2007-04-04 |
| US8398767B2 (en) | 2013-03-19 |
| JP2008501600A (ja) | 2008-01-24 |
| WO2005121415A1 (en) | 2005-12-22 |
| JP5014804B2 (ja) | 2012-08-29 |
| KR100848380B1 (ko) | 2008-07-25 |
| EP1769105B1 (en) | 2014-05-14 |
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