WO2008145231A3 - Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium - Google Patents

Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium Download PDF

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Publication number
WO2008145231A3
WO2008145231A3 PCT/EP2008/003113 EP2008003113W WO2008145231A3 WO 2008145231 A3 WO2008145231 A3 WO 2008145231A3 EP 2008003113 W EP2008003113 W EP 2008003113W WO 2008145231 A3 WO2008145231 A3 WO 2008145231A3
Authority
WO
WIPO (PCT)
Prior art keywords
treatment liquid
corresponding treatment
silicon wafers
hydroxy
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/003113
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German (de)
English (en)
Other versions
WO2008145231A2 (fr
Inventor
Holger Froehlich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gebrueder Schmid GmbH and Co
Original Assignee
Gebrueder Schmid GmbH and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gebrueder Schmid GmbH and Co filed Critical Gebrueder Schmid GmbH and Co
Publication of WO2008145231A2 publication Critical patent/WO2008145231A2/fr
Publication of WO2008145231A3 publication Critical patent/WO2008145231A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention vise à perfectionner un processus de texturation de tranches de silicium (17) pour produire des piles solaires, et notamment à accélérer et à augmenter la densité de la structure pyramidale. A cet effet, il est prévu d'ajouter comme additif à un liquide de traitement alcalin, au moins un composé hydroxy soluble dans l'eau, issu du groupe comprenant les hydroxycarbonyles, les hydroxyaromates, les composés hydroxy alicycliques, les composés polyhydroxy aliphatiques, ainsi que les composés hydroxy aliphatiques-aromatiques, de préférence du sorbitol. La proportion d'additif peut ne s'élever qu'à quelques pour cent.
PCT/EP2008/003113 2007-05-25 2008-04-18 Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium Ceased WO2008145231A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007026081A DE102007026081A1 (de) 2007-05-25 2007-05-25 Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
DE102007026081.6 2007-05-25

Publications (2)

Publication Number Publication Date
WO2008145231A2 WO2008145231A2 (fr) 2008-12-04
WO2008145231A3 true WO2008145231A3 (fr) 2009-04-02

Family

ID=39874935

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/003113 Ceased WO2008145231A2 (fr) 2007-05-25 2008-04-18 Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium

Country Status (3)

Country Link
DE (1) DE102007026081A1 (fr)
TW (1) TW200913045A (fr)
WO (1) WO2008145231A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008022282A1 (de) 2008-04-24 2009-10-29 Gebr. Schmid Gmbh & Co. Einrichtung und Verfahren zur Behandlung von Silizium-Wafern oder flachen Gegenständen
DE102009012827A1 (de) 2009-03-03 2010-10-07 Gebr. Schmid Gmbh & Co. Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür
DE102009028762A1 (de) * 2009-08-20 2011-03-03 Rena Gmbh Verfahren zum Ätzen von Siliziumoberflächen
CN101635322B (zh) * 2009-08-26 2011-01-05 北京中联科伟达技术股份有限公司 一种多晶太阳能电池片的链式制绒的方法及装置
DE102009060931A1 (de) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten
DE102011000861A1 (de) * 2011-02-22 2012-08-23 Rena Gmbh Verfahren zum Behandeln eines Objekts, insbesondere eines Solarzellensubstrats, und Vorrichtung zur Durchführung des Verfahrens
DE102011084346A1 (de) 2011-10-12 2013-04-18 Schott Solar Ag Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
DE102012107537A1 (de) * 2012-08-16 2014-05-22 Hanwha Q Cells Gmbh Verfahren zur Oberflächenbehandlung eines monokristallinen Halbleiterwafers und Verfahren zur Herstellung einer monokristallinen Halbleiterwafer-Solarzelle
CN102916075A (zh) * 2012-09-27 2013-02-06 奥特斯维能源（太仓）有限公司 一种制绒深度稳定的方法
CN103811583A (zh) * 2012-11-12 2014-05-21 北京北方微电子基地设备工艺研究中心有限责任公司 一种硅片制绒方法及硅片制绒装置
DE102014119090B4 (de) 2014-12-18 2022-12-01 Hanwha Q Cells Gmbh In-line-Nassbankvorrichtung und Verfahren für die nasschemische Bearbeitung von Halbleiterwafern
DE102016105866B3 (de) * 2016-03-31 2017-07-06 Technische Universität Bergakademie Freiberg Siliziumwafer, Verfahren zum Strukturieren eines Siliziumwafers und Solarzelle

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
EP0944114A2 (fr) * 1998-03-18 1999-09-22 SIEMENS SOLAR GmbH Procedé pour l'attaque par voie humide de structures pyramidales sur la surface de silicium
JP2002057139A (ja) * 2000-08-09 2002-02-22 Sanyo Electric Co Ltd 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
JP2005019605A (ja) * 2003-06-25 2005-01-20 Naoetsu Electronics Co Ltd テクスチャー形成用エッチング液
WO2006046601A1 (fr) * 2004-10-28 2006-05-04 Mimasu Semiconductor Industry Co., Ltd. Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur pour application solaire et solution d’attaque chimique
CN1983644A (zh) * 2005-12-13 2007-06-20 上海太阳能科技有限公司 制作单晶硅太阳电池绒面的方法
EP1826829A2 (fr) * 2006-02-23 2007-08-29 Sanyo Electric Co., Ltd. Procédé pour fabriquer un substrat à surface irrégulière et procédé pour fabriquer un dispositif photovoltaïque

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
EP0944114A2 (fr) * 1998-03-18 1999-09-22 SIEMENS SOLAR GmbH Procedé pour l'attaque par voie humide de structures pyramidales sur la surface de silicium
US20020079290A1 (en) * 1998-03-18 2002-06-27 Konstantin Holdermann Etching solution for wet chemical pyramidal texture etching of silicon surfaces
JP2002057139A (ja) * 2000-08-09 2002-02-22 Sanyo Electric Co Ltd 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
JP2005019605A (ja) * 2003-06-25 2005-01-20 Naoetsu Electronics Co Ltd テクスチャー形成用エッチング液
WO2006046601A1 (fr) * 2004-10-28 2006-05-04 Mimasu Semiconductor Industry Co., Ltd. Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur pour application solaire et solution d’attaque chimique
EP1806775A1 (fr) * 2004-10-28 2007-07-11 Mimasu Semiconductor Industry Co., Ltd. Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur pour application solaire et solution d attaque chimique
CN1983644A (zh) * 2005-12-13 2007-06-20 上海太阳能科技有限公司 制作单晶硅太阳电池绒面的方法
EP1826829A2 (fr) * 2006-02-23 2007-08-29 Sanyo Electric Co., Ltd. Procédé pour fabriquer un substrat à surface irrégulière et procédé pour fabriquer un dispositif photovoltaïque

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DIVAN R ET AL: "Roughning and smoothing dynamics during KOH silicon etching", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 74, no. 1-3, 20 April 1999 (1999-04-20), pages 18 - 23, XP004188049, ISSN: 0924-4247 *
MOLDOVAN C ET AL: "Anisotropic etching of silicon in a complexant redox alkaline system", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 58, no. 1-3, 21 September 1999 (1999-09-21), pages 438 - 449, XP004253045, ISSN: 0925-4005 *

Also Published As

Publication number Publication date
DE102007026081A1 (de) 2008-11-27
TW200913045A (en) 2009-03-16
WO2008145231A2 (fr) 2008-12-04

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